• Title/Summary/Keyword: crystal growth rate

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Optimization of chemical mechanical polishing for bulk AlN single crystal surface (화학적 기계적 연마 공정을 통한 bulk AlN 단결정의 표면 가공)

  • Lee, Jung Hun;Park, Cheol Woo;Park, Jae Hwa;Kang, Hyo Sang;Kang, Suk Hyun;Lee, Hee Ae;Lee, Joo Hyung;In, Jun Hyeong;Kang, Seung Min;Shim, Kwang Bo
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.28 no.1
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    • pp.51-56
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    • 2018
  • To evaluate surface characteristics of AlN single crystal grown by physical vapor transport (PVT) method, chemical mechanical polishing (CMP) were performed with diamond slurry and $SiO_2$ slurry after mechanical polishing (MP), then the surface morphology and analysis of polishing characteristics of the slurry types were analyzed. To estimate how pH of slurry effects polishing process, pH of $SiO_2$ slurry was controlled, the results from estimating the effect of zeta potential and MRR (material removal rate) were compared in accordance with each pH via zeta potential analyzer. Eventually, surface roughness RMS (0.2 nm) could be derived with atomic force microscope (AFM).

A promising new piezoelectric material -Langasite and its related compounds-

  • Kawanaka, Hiroyuki;Takeda, Hiroaki;Shimamura, Kiyoshi;Onozato, Norio;Fukuda, Tsuguo
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1997.06a
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    • pp.145-145
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    • 1997
  • Recent progress of electric technology requires new piezoelectric crystals having superior properties such as zero temperature coefficients and large electromechanical coupling factors. We have developed a series of new leading chandidates, La$_3$Ga5SiO14(langasite, LGS), La3Nb0.5Ga5.5O14(LNG), La3Ta0.5O14(LTG), to satisfy those requirements. High quality LGS, LNG and LTG single crystals, with dimensions of 2 inches in diameter, were successfully grown by the Czochralski method at a pulling rate of 1mm/h. Since no variation of chemical composition was observed when whole melt in a crucible was crystallized, congruency of these compositions was confirmed. Physical constants such as elastic constants, dielectric constants and piezoelectric constants were measured. Filters and oscillators made of grown LGS, LNG and LTG single crystals showed superior properties such as three times wider passband than that of quartz, low insertion loss and easy processing, Langasite family crystals were shown to be superior materials to other known materials such as quartz, LiTaO$_3$, $\alpha$-AlPO$_4$ and Li$_2$B$_4$O7.

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Surface analysis of a-$Si_xC_{1x}:H$ deposited by RF plasma-enhanced CVD (RF plasma-enhancd CVD 법에 의해 증착된 a-$Si_xC_{1x}:H$ 의 표면분석)

  • Kim, Yong-Tak;Yang, Woo-Seok;Lee, Hyun;Byungyou Hong;Yoon, Dae-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1999.06a
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    • pp.285-303
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    • 1999
  • Thin films of hydrogenated amorphous silicon carbide compounds (a-SixC1x:H) of different compositions were deposited on Si substrate by RF plasma-enhanced chemical vapor deposition (PECVD). Experiments were carried out using silane(SiH4) and methane(CH4) as the gas precursors at 1 Torr and at low substrate temperature (25$0^{\circ}C$). The gas flow rate was changed with every other parameters (pressure, temperature, RF power) fixed. The substrate was Si(100) wafer and all of the films obtained were amorphous. The bonding structure of a-SixC1x:H films deposited was investigated by X-ray photoelectron spectroscopy (XPS) for the film compositions. In addition, the surface morphology of films was investigated by atomic force microscopy (AFM).

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Growth of $MgTiO_3 $ Single Crystals by the Floating Zone Method (F.Z,법에 의한 Mg $TiO_3 $단결정 육성)

  • Jang, Yeong-Nam;Kim, Mun-Yeong;Bae, In-Guk
    • Korean Journal of Crystallography
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    • v.1 no.1
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    • pp.29-34
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    • 1990
  • Single crystals of the peritectic compound MgTiO3 up to 8 m diameter and 100mm long along the [1010] axis. were yon by the travelling solvent floating zone technique using a halogen lamp image furnace. The grown single crystal. which shows a solid solution range at high temperature, exsolves TiO2 component if it is annealed very slowly to room termperature. Grown boules were black but become translucent with pinkish brown color after tempering at 1100 t for 8-10 hours in oxygen atmosphere and showed distint chatoyancy along the (0001) plane. The grown crystal can be used as a new modified cat's eye gemstone. The optimum conditions were as follows ;Sintering temperature of the charge rod, 1300℃ the growth rate, 2-2.5mmh and the composition of the charge rod in molar ratio. MgO : TiO2 : 1:1.05.

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Factors Affecting the Crystal Growth of Scalenohedral Calcite by a Carbonation Process

  • Thriveni, Thenepalli;Um, Namil;Nam, Seong-Young;Ahn, Young Jun;Han, Choon;Ahn, Ji Whan
    • Journal of the Korean Ceramic Society
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    • v.51 no.2
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    • pp.107-114
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    • 2014
  • In the present work, we report a novel microstructure of scalenohedral calcite synthesized without any additives by a simple and ecofriendly carbonation process carried out in a liquid-gas system as well as the effects of experimental conditions on the crystal growth of the scalenohedral calcite phase. Various process parameters, pH, temperature, $Ca(OH)_2$ concentration, $CO_2$ flow rates, and the total volume concentration, were investigated to enhance the sensitivity of the process. The highest average length of the scalenohedral calcite was obtained at pH 6.0, temperature of $45^{\circ}C$, $Ca(OH)_2$ concentration of 0.2M, $CO_2$ flow rate of 80mL/min, and total volume of 1L. The synthesized calcite was characterized by XRD, SEM, and FTIR to identify the phases and surface morphology.

The Change of Crystal Structure of TiO2 Fine Powders by Heat Treatment (열처리에 의한 TiO2 미립자의 결정구조 변화)

  • Kim, S.J.;Chang, G.H.;Jin, Y.C.;Jheong, G.R.
    • Journal of the Korean Society for Heat Treatment
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    • v.7 no.1
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    • pp.11-16
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    • 1994
  • Anatase $TiO_2$ particles prepared by experiment were used to study the change of crystal structure by calcination temperature. The results were as follows. Crystallite size of anatase $TiO_2$ particles increased with calcination temperature. The rate of increasing the crystallite size of anatase $TiO_2$ particles was decreased below $700^{\circ}C$ and was markedly increased above $700^{\circ}C$. Unit cell volume of $TiO_2$ was expanded at low temperature and was contracted at high temperature. This result means that the growth of crystallite size was occured in the direction.

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Single Crystal Growth of Sapphire by Flux Method (융제법에 의한 Sapphire 단결정 성장에 관한 연구)

  • Cho, B.G.;Joo, K.;Orr, K.K.;Choi, J.K.;Kim, D.W.;Kang, W.H.
    • Journal of the Korean Ceramic Society
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    • v.25 no.2
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    • pp.95-100
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    • 1988
  • Single crystals of sapphire were grown from solution by slow cooling method using B2O3 and PbO as flux agents. The morphology of grown crystals was tube, rhombohedral, or hexagonal-plate. It was found that the morphology and the size of grown crystal were highly dependent on the amount of fluxes in the solution, the ratio of B2O3 vs. PbO, and cooling rate.

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Liquid Crystal Alignment on the Films of Polymethacrylate and Polyurethane Bearing an Aminotroazobenzene Chromophore

  • Park, Dong-Hoon;Kim, Jae-Hyung;Cho, Kang-Jin
    • Macromolecular Research
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    • v.8 no.4
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    • pp.172-178
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    • 2000
  • We synthesized polymethacrylate and polyurethane bearing a photosensitive azobenzene chromophore. Photo-induced birefringence of the thin film was observed under a linearly polarized light(λ = 532 nm). Dynamic behaviors of birefringence in two polymers were investigated in terms of the rate constants of growth and decay. An induced dichroism was observed from polarized UV-VIS absorption spectroscopy. Layers of two photosensitive polymers were used for aligning liquid crystal (LC) molecules instead of one of the rubbed polyimide layers in the conventional twisted nematic cell. For producing homogeneous alignment of a nematic LC molecule, a linearly polarized light was exposed to the films of two polymers. The stability of the LC alignment upon the linearly polarized light exposure was also studied.

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Growth and characterization of ZnSe/GaAs epilayer by hot-wall epitaxy method (Hot-Wal Epitaxy 방법에 의한 ZnSe/GaAs 박막 성장과 특성)

  • 정태수;강창훈;유평렬
    • Journal of the Korean Vacuum Society
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    • v.8 no.3B
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    • pp.302-307
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    • 1999
  • We have grown a high quality ZnSe(100) epilayer on the GaAs(100) substrate by hot-wall epitaxy method. The FWHM value from double-crystal x-ray diffraction rocking curve and growth rate of the ZnSe epilayer grown under the optimal growth conditions were 195 arcsec and 0.03 $\mu \textrm m$/min, respectively. The $I_2^U$ and $I_2^L$ peaks, which split by strain due to lattice mismatch between substrate and epilayer, were measured from the photoluminescence experiment. And we found that the residual impurities in ZnSe epilayer were concerned with Al or CI elements from the calculated binding energy of donor impurity.

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GaAs Epitaxial Layer Grown by MBE (II) (MBE에 의한 GaAs 에피택셜 성장(II))

  • Kang, Tae Won;Lee, Jae Jin;Kim, Young Ham;Kim, Jin Hwang;Kim, Bong Ryul
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.23 no.3
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    • pp.376-383
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    • 1986
  • In this paper, we show that the growth rate of MBE GaAs epitaxial layer is controlled entirely by the flux density of the Ga beam, impinging on the substrate surface, and is linearly proportional to the Ga effusion cell temperature and the growth time. According to our investigation of the epitaxial layer surfvace through RHEED, AES, SIMS and SEM, if the growth temperature is maintained above 590\ulcorner, the surface crystal structure, flathness and stoichiometry become significantly enhanced, and the epilayer surface has a smooth mirror-like appearance.

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