• Journal of the Korean Crystal Growth and Crystal Technology
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• 제9권4호
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• pp.365-370
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• 1999

Computer simulations have played a central role in the development of our understanding of the atomic scale processes involved in crystal growth. The assumptions underlying computer modeling will be discussed and our recent work on modeling of the kinetic formation of thermodynamically unstable phases in alloys or mixtures will be reviewed. Our Monte Carlo computer simulations have reproduced the experimental results on the rapid recrystallization of laser-melted doped silicon. An analytical model for this phenomenon has been developed, and its applicability to other materials will be discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제18권5호
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• pp.191-194
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• 2008

We will focus on the horizontal Bridgman growth system to analyze the transport phenomena numerically, because the simple furnace system and the confined growth environment allow for the precise understanding of the transport phenomena in solidification process. In conventional melt growth process, the dopant concentration tends to vary significantly along the crystal. In this work, we propose the modification of crucible geometry for improving the productivity of silicon single-crystal growth by controlling axial specific resistivity distribution. Numerical analysis has been performed to study the transport phenomena of dopant impurities in conventional and proposed Bridgman silicon growth using the finite element method and implicit Euler time integration. It has been demonstrated using mathematical models and by numerical analysis that proposed method is useful for obtaining crystals with superior uniformity along the growth direction at a lower cost than can be obtained by the conventional melt growth process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제6권3호
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• pp.293-300
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• 1996

A continuous growth method (Orr's method) were developed to grow LiNbO3 single crystals. The optimum growth condition established are as follows; When the controlled temperature of a platinum crucible were 1190℃∼1210℃, the pulling rate was 2 mm/hr, the feeding rate was 1.5∼2.5 g/hr, and the rotation speed was 20 rpm. The phase and growth orientation of the grown LiNbO3 crystals wer characterized by a X-ray diffraction method. The overflowing phenomena, which induced cracking into the grown crystal during the process, was effectively suppressed by the control of the growth parameter.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.51-67
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• 1999

The growth of crystals with high melting points tfus$\geq$1$600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with tfus》1$600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, any oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure pO2. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and ways to forecast their behavior under growth conditions.r growth conditions.

• Journal of the Korean Ceramic Society
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• 제32권2호
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• pp.270-278
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• 1995

Nd : YAl3(BO3)4 (NYAB) single crystal has been developed for green laser. In this experiment, we found K2O/3MoO3/0.5B2O3 to be a suitable flux for NYAB crystal growth, and grew NYAB crystal by TSSG method using this flux. By varying the cooling rate of solution, seed orientation, and rotation speed, the effects of these growth conditions on the crystal quality and its morphology were examined. Suitable growth conditiions were a cooling rate slower than 2.4$^{\circ}C$/day, the rotation speed of 25~30 rpm, and the <001> seed orienttion. The phases of grown crystal, coexisting and volatile materials were investigated by X-ray diffraction. In addition, the possiblity of laser action was examined by UV analysis.

• Journal of the Korean Crystal Growth and Crystal Technology
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• 제29권3호
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• pp.140-142
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• 2019

AlN (Aluminum Nitride) crystal which could be used to substrates for UV LEDs was grown by PVT ((Physical Vapor Transport) method. 3 inch AlN single crystal with a thickenss of 4 mm was grown using Polycrystalline seed for 120 hours. In this report, a result of 3 inch polycrystalline bulk AlN growth behavior using large size crucible and growth condition were reported.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 한국결정성장학회 2000년도 Proceedings of 2000 International Nano Crystals/Ceramics Forum and International Symposium on Intermaterials
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• pp.87-125
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• 2000

A new paradigm of crystal growth was suggested in a charged cluster model, where charged clusters of nanometer size are suspended in the gas phase in most thin film processes and are a major flux for thin film growth. The existence of these hypothetical clusters was experimentally confirmed in the diamond and silicon CVD processes as well as in gold and tungsten evaporation. These results imply new insights as to the low pressure diamond synthesis without hydrogen, epitaxial growth, selective deposition and fabrication of quantum dots, nanometer-sized powders and nanowires or nanotubes. Based on this concept, we produced such quantum dot structures of carbon, silicon, gold and tungsten. Charged clusters land preferably on conducting substrates over on insulating substrates, resulting in selective deposition. if the behavior of selective deposition is properly controlled, charged clusters can make highly anisotropic growth, leading to nanowires or nanotubes.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.185-186
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• 1997

• Proceedings of the Korea Association of Crystal Growth Conference
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• 한국결정성장학회 1998년도 PROCEEDINGS OF THE 14TH KACG TECHNICAL MEETING AND THE 5TH KOREA-JAPAN EMGS (ELECTRONIC MATERIALS GROWTH SYMPOSIUM)
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• pp.17-18
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• 1998

• Proceedings of the Korea Association of Crystal Growth Conference
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• 한국결정성장학회 1996년도 The 9th KACG Technical Annual Meeting and the 3rd Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.537-537
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• 1996