Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
권호 표지

Atomic scale crystal growth processes

  • Jackson, Kenneth A. (Department of Materials Science and Engineering University of Arizona) ;
  • Beatty, Kirk M. (Department of Materials Science and Engineering University of Arizona)
  • Published : 1999.08.01
Download PDF
⟨ Previous Next ⟩

Abstract

Computer simulations have played a central role in the development of our understanding of the atomic scale processes involved in crystal growth. The assumptions underlying computer modeling will be discussed and our recent work on modeling of the kinetic formation of thermodynamically unstable phases in alloys or mixtures will be reviewed. Our Monte Carlo computer simulations have reproduced the experimental results on the rapid recrystallization of laser-melted doped silicon. An analytical model for this phenomenon has been developed, and its applicability to other materials will be discussed.

Keywords

References

  1. J. App. Phys. v.42 H.J. Leamy;K.A. Jackson
  2. J. Cryst. Growth v.24;25 H.J. Leamy;G.H. Gilmer
  3. Surface Physics of Materials H.J. Leamy;G.H. Gilmer;K.A. Jackson;J.M. Blakeley(ed.)
  4. Crystal Growth and Materials G.H. Gilmer;K.A. Jackson;E.Kaldis(ed.);H.J. Scheel(ed.)
  5. Adv. Chem. Phys. v.40 J.D. Weeks;G.H. Gilmer
  6. J. Cryst. Growth v.128 K.A. Jackson;G.H. Gilmer;D.E. Temkin;J.D. Weinberg;K.M. Beatty
  7. Phys. Rev. Let. v.75 K.A. Jackson;G.H. Gilmer;D. Temkin
  8. J. Cryst. Growth v.163 K.A. Jackson;G.H. Gilmer;D.E. Temkin;K.M. Beatty
  9. J. Cryst. Growth v.174 K.M. Beatty;K.A. Jackson
  10. MRS Symp. Proc. v.141 M.H. Grabow;G.H. Gilmer;A.F. Bakker
  11. Phys. Rev. Lett. v.49 J.A. Yater;M.O. Thompson
  12. J. Crystal. Growth v.98 W. Obretenov;D. Kashchiev;V. Botsanov
  13. Canad. J. Phys. v.38 W.D. Edwards
  14. Semiconductor Silicon T.F. Ciszek;R.R. Haberecht(Ed.);E.L. Kern(Ed.)
  15. J. Cryst. Growth v.24;25 T. Abe
  16. App. Phys. Let. v.37 P. Baeri;J.M. Poate;S.U. Campisano;G. Foti;E. Rimini;A.G. Cullis
  17. App. Phys. Let. v.38 P. Baeri;G. Foti;J.M. Poate;S.U. Campisano;A.G. Cullis
  18. J. App. Phys. v.51 C.W. White;S.R. Wilson;B.R. Appleton;F.W. Young Jr.
  19. MRS Symp. Proc. v.1 C.W. White;B.R. Appleton;B. Stritzker;Z.D. M.;S.R. Wilson
  20. MRS Symp. Proc. v.1 P. Baeri;G. Foti;J.M. Poate;S.U. Campisano;E. Rimini;A.G. Cullis
  21. MRS Symp. Proc. v.35 M.J. Aziz;J.Y. Tsao;M.O. Thompson;P.S. Peercy;C.W. Whtie;W.H. Christie
  22. Phys. Rev. Let. v.56 M.J. Aziz;J.Y. Tsao;M.O. Thompson;P.S. Peercy;C.W. White
  23. Phys. Rev. Let. v.57 M.J. Aziz;C.W. White
  24. J. Cryst. Growth v.148 J.A. Kittl;M.J. Aziz;D.P. Brunco;M.O. Thompson
  25. J. App. Phys. v.76 R. Reitano;P.M. Smith;M.J. Aziz
  26. MRS Symp. Proc. v.279 P.M. Smith;R. Reitano;M.J. Aziz
  27. Acta Met. et Mat. v.42 P.M. Smith;M.J. Aziz
  28. Crystal Growth and Materials A.J.R. de Kock;E. Kaldis(ed.)
  29. Sov. Phys. Cryst. v.17 D.E. Temkin
  30. K.A. Jackson;K.M. Beatty;K.A. Gudgel