• 비교문화연구
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• 제32권
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• pp.167-179
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• 2013

This paper focuses on a sociologic approach, the theory of planned behavior (Ajzen 1991) and a sociolinguistic field, the language shift (Fishman 1991, Crystal 2000). It describes the theoretical background of language shift and briefly mentions the history of Hungarian language and Romanian language contacts. After presenting language use of the Hungarian minority students and explaining the theory of planned behavior, it turns to apply the theory of planned behavior to the language shift from the view of bilingual speaker(s). This paper wants to propose the application of the theory of planned behavior in language shift and open new perspective in bilingual research.

• 대한전자공학회논문지
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• 제25권4호
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• pp.460-466
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• 1988

In this paper, the theory and experiments on the one-way optical image transmission through optical fiber by using degenerate four wave mixing in BSO single crystal are demonstrated. From the theoretical analysis, the diffraction efficiency of phase conjugate wave in BSO single crystal is greatly dependent on applied electric field intensity, diffraction grating period formed in the crystal and incident beam ratio, those are also in good agreement with the experimental results. Based on the experimental results, we have arranged the typical degenerate four wave mixing system in the optimal conditions (applied electric field, E. = 5kV/cm` diffraction grating period, 3\ulcorner` beam ratio of backward pump wave versus signal wave, 2.7) and realized one-way optical image transmission system through optical fiber using BSO single crystal.

• 한국초전도ㆍ저온공학회논문지
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• 제15권2호
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• pp.16-19
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• 2013

The magneto-resistivity and electric field-current density (E-J) curves were investigated up to a magnetic field 9 T in the optimally doped $BaFe_{1.8}Co_{0.2}As_2$ single crystal with a superconducting temperature ($T_c$) of 24.6 K. The E-J Scaling behaviors below and above vortex glass transition temperature ($T_g$) were found, confirming the existence of the vortex glass phase transition. The critical exponents for the diverging spatial and time correlations at $T_g$, were obtained as v = $1.1{\pm}0.1$ and z = $4.5{\pm}0.3$, respectively. The obtained critical exponents are in good agreement with the predicted values of v ~ 1 - 2 and z > 4 within the 3D vortex glass theory.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2006년도 추계학술발표대회 및 제11회 신소재 심포지엄
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• pp.25.1-25.1
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• 2006

• Interaction and multiscale mechanics
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• 제1권4호
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• pp.423-435
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• 2008

This paper employs the reproducing kernel (RK) approximation for evaluation of field theory-based incompatibility tensor in a polycrystalline plasticity simulation. The modulation patterns, which is interpreted as mimicking geometrical-type dislocation substructures, are obtained based on the proposed method. Comparisons are made using FEM and RK based approximation methods among different support sizes and other evaluation conditions of the strain gradients. It is demonstrated that the evolution of the modulation patterns needs to be accurately calculated at each time step to yield a correct physical interpretation. The effect of the higher order strain derivative processing zone on the predicted modulation patterns is also discussed.

• 한국결정성장학회지
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• 제7권4호
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• pp.548-554
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• 1997

수직 Bridgman방법으로 $Mg_{0.18}Zn_{0.84}$Te:Co(Co:0.01 mole%)단결정을 성장시켰다. 성장된 단결정의 결정구조와 광흡수 spectra를 연구하였다. X 선 회절무늬로부터 성장된 단결정의 구조는 cubic구조이었고 격자상수 a=6.1422 $\AA$이었다. 광흡수 측정결과 $Co^{2+}$ 이온에 기인된 $A-band:^4A_2(^4F){\to}^4T_2(^4F),\; B-band:^4A_2(^4F){\to}^4T_1(^4F), C- band:^4A_2(^4F){\to}^4T_1(^4P)$의 intracenter transition과, 흡수단 근처의 charge transfer에 의한 photoionization transition에 관계된 D-band를 550-770 nm의 파장영역에서 관측하였다. 또한 결정장 이론에 의해 결정매개변수(Dq)와 Racah parameter(B)를 결정하였다.

• E2M - 전기 전자와 첨단 소재
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• 제10권2호
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• pp.105-112
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• 1997

Undoped and Co$^{2+}$-doped Zn$_{4}$GeSe$_{6}$ single crystals were grown by the Chemical Transport Reaction method using iodine as a transporting agent. The crystal structure of these compounds determined by X-ray diffraction analysis was monoclinic structure. The direct energy gaps of these compounds were measured and the temperature dependence of the optical energy gap were closely investigated over the temperature range 10-290K. The temperature dependence of the optical energy gap is well presented by the Varshni equation. Also the optical absorption peaks of Zn$_{4}$GeSe$_{6}$ :Co$^{2+}$ single crystal observed, centered at 5437, 6079, 7142, 12950, 13462, 14786 and 15735 $cm^{-1}$ /, can be explained in terms of the electronic transitions of Co$^{2+}$ ions located at Td symmetry of the host materials. According to the crystal-field theory, the crystal-field, Racah and spin-orbit coupling parameters obtained from the absorption bands are given by Dq = 361$cm^{-1}$ /, B = 655$cm^{-1}$ / and .lambda. = 284$cm^{-1}$ / respectively.ively.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제54권7호
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• pp.304-307
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• 2005

The $In_2S_3\;and\;In_2S_3:Co^{2+}$ thin films were grown by the spray Pyrolysis method. The thin films crystallized into tetragonal structures. The indirect energy band gap was 2.32ev for $In_2S_3\;and\;1.81eV\;for\;In_2S_3:Co^{2+}$ at 298K. The direct energy band gap was 2.67ev for $In_2S_3:Co^{2+}$ thin films. Impurity optical absorption peaks were observed for the $In_2S_3:Co^{2+}$ thin films. These impurity absorption peaks are assigned, based on the crystal field theory to the electron transitions between the energy levels of the $Co^{2+}$ ion sited in $T_{d}$ symmetry. The electrical conductivity($\sigma$), Hall mobility(${\mu}_H$), and carrier concentration (n) of the $In_2Se_3$ thin film were measured, and their temperature dependence was investigated.

• 한국재료학회지
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• 제29권8호
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• pp.477-482
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• 2019

The magnetic properties and electronic structures of the B20 crystal structure MnGe and MnSi were investigated using the density functional theory with local density approximation. The low symmetry of the B20 crystal structure plays a very important role to make electromagnetic characteristics of these materials. The important result of the calculations is that it can be observed the appearance of a pair of gaps in the density of states near the Fermi level in both compounds. These features are results from d-band splitting by the low symmetry of the crystal field from B20 crystal structure. It can be seen that there is half-metallic characteristics from the density of states in both compounds. The calculation shows that the value of magnetic moment of MnGe is 5 times bigger than that of MnSi even though they have same crystal structure. The electronic structures of paramagnetic case have a very narrow indirect gap just above the Fermi level in both compounds. These gaps acquire some significance in establishing the stability of the ferromagnetic states within the local density approximation. Calculation shows that the Mn 3d character dominates the density of states near the Fermi level in both materials.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 영호남학술대회 논문집
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• pp.42-46
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• 2000

${\beta}{\cdot}In_2S_3$ 및 ${\beta}{\cdot}In_2S_3:Co^{2+}$ 은 $In_2S_3$+S+ZnS를 출발물질로 하여 ($ZnCl_2+I_2$)를 수송매체로 사용한 chemical transport reaction method로 성장시켰다. 성장된 단결정은 tetragonal structure를 갖고 298K에서 indirect optical energy gap은 2.240eV, 1.814eV로 각각 주어졌고, direct optical energy gap은 2.639eV, 2.175eV로 각각 주어졌다. ${\beta}{\cdot}In_2S_3:Co^{2+}$ single crystal에서 impurity optical absorption peak가 나타났으며, 이들 peaks의 origin은 $Co^{2+}(Td)$ ion의 energy level 간의 electron transition임을 crystal field theory를 적용하여 규명하였다.