• 한국결정성장학회지
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• 제1권1호
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• pp.5-16
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• 1991

희토류 금속 산화물(RE=Ce, Pr, Nd, Eu, Er)을 1wt% 첨가한 큐빅 $ZrO_2(10 mol% Y_2O_3)$단결정을 스컬법으로 육성하였다. 육성된 단결정의 (111) 면에서의 임피던스 분석에 의한 전기적 성질을 조사하였다. 낮은 온도($500^{\circ}C$)에서 온도와 전기전도도와의 관계를 plot하였으며 $약300-400^{\circ}C$ 사이에서 전이를 관찰하였다. 저온 (전이전)과 고온(전이후 $50^{\circ}C$까지)산소 vacancy 이동에 관한 활성화 에너지를 구하였으며 전이로 인한 활성화 에너지의 차이는 안정제로 첨가한 이트륨 이온과 희토류 dopant 그리고 산소 vacancy와의 defect complexes를 붕괴하고 이온전도에 참여하게되는 산소 vacancy 형성에 관한 활성화 에너지로 볼 수 있다. yttria가 첨가됨에 따라, 또 희토류 산화물들의 첨가에 따른 활성화 에너지를 구하였으면 이온전도기구를 논의하였다. 육성된 단결정들은 첨가된 dopantdp 기인하여 Ce은 orang-red, Pr은 golden-yellow, Nd는 lilac, Eu는 옅은 pink, Er은 pink색으로 발현하였으며 가시광선 영역에서 광흡수 결과로서 나타내었다.

• 한국결정성장학회지
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• 제8권3호
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• pp.396-400
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• 1998

KLN은 성장 결정 내의 $Nb_2O_5$함유량에 따라 물성이 크게 변화하므로 단결정의 조성제어가 매우 중요하다. 본 실험에서는 초기 KLN용액의 $Nb_2O_5$함량을 증가시켜 $Nb_2O_5$함유량이 높은 KLN단결정을 온도요동법과 TSSG법에 의해 성장시키고 성장된 KLN단결정인 $Nb_2O_5$증가량에 따른 격자결함의 유무를 관찰하고자 유전 및 광학 특성을 관찰하다. KLN 단결정 내에 격자결함의 증가에 의해 낮은 에너지로의 단락 frequency 이동과 DPT 특성을 보이는 넓은 Curie 범위가 관찰되었다.

• 한국결정성장학회지
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• 제1권1호
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• pp.17-25
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• 1991

The construction details of VGF apparatus with a DM(direct monitoring) furnace for the growth of low defect crystal and characteristics of GaAs crystal grown by this apparatus are described. The average dislocation densities and EL2 concentration of as-grown undoped GaAs along the different solidified fractions exhibit $4{\times}10^{2}-7{\times}10^{3}cm^{-2}$ and $6{\times}10^{14}-4{\times}10^{15}cm^{-3}$, which are less than those observed for liquid encapsulated Czochralski(LEC) or high-pressure vertical gradient freeze(VGF) crystals. These remarkable reduction of the dislocation densities and EL2 concentrations were explained by the lower temperature gradient ($dT/dx-10^{\circ}/cm$) and slower rates of post - growth cooling ($20^{\circ}C/hr:1240-1000^{\circ}C,\;30^{\circ}C/hr:1000-700^{\circ}C$). Also, The Hall mobilities, carrier concentrations show uniform distribution throughtout 80% of the ingot length.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.221.1-221.1
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• 2015

The vapor-liquid-solid (VLS) method, where the "liquid" catalytic droplets collecting atoms from vapor precursors build the solid crystal layers via supersaturation, is a ubiquitous technique to synthesize 1-dimensional nanoscale materials. However, the lack of fundamental understanding of chemical information governing the process inhibits the rational route to the structural programming. By combining the in situ or operando IR spectroscopy with post-growth high resolution electron microscopy, we show the strong correlation between the surface chemical species concentration and nanowire structures. More specifically, the critical role of surface adsorbed hydrogen, generated from the decomposition of Si2H6 precursor on the interplay between nanowire / kinking and the defect propagation is demonstrated. Our results show that adsorbed hydrogen atoms are responsible for selecting -oriented growth and indicate that a twin boundary imparts structural coherence. The twin boundary, only continuous at / kinks, reduces the symmetry of the trijunction and limits the number of degenerate directions available to the nanowire. These findings constitute a general approach for rationally engineering kinking superstructures and also provide important insight into the role of surface chemical bonding during VLS synthesis.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2023년도 추계학술발표대회
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• pp.124-125
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• 2023

Defect detection during liquid crystal display (LCD) manufacturing has always been a critical challenge. This study aims to address this issue by proposing a data augmentation method based on generative adversarial networks (GAN) to improve defect identification accuracy in LCD production. By leveraging synthetically generated image data from GAN, we effectively augment the original dataset to make it more representative and diverse. This data augmentation strategy enhances the model's generalization capability and robustness on real-world data. Compared to traditional data augmentation techniques, the synthetic data from GAN are more realistic, diverse and broadly distributed. Experimental results demonstrate that training models with GAN-generated data combined with the original dataset significantly improves the detection accuracy of critical defects in LCD manufacturing, compared to using the original dataset alone. This study provides an effective data augmentation approach for intelligent quality control in LCD production.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.154-154
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• 2003

A stoichiometric mixture of evaporating materials for CuGaSe2 single crystal thin films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuGaSe2, it was found tetragonal structure whose lattice constant at and co were 5.615 ${\AA}$ and 11.025 ${\AA}$, respectively. To obtain the single crystal thin films, CuGaSe2 mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (MWE) system. The source and substrate temperatures were Slot and 450$^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (UXD). The carrier density and mobility of CuGaSe2 single crystal thin films measured with Hall effect by van der Pauw method are 5.0l${\times}$10$\^$17/ cm$\^$-3/ and 245 $\textrm{cm}^2$/V$.$s at 293K, respectively. The temperature dependence of the energy band gap of the CuGaSe2 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 1.7998 eV - (8.7489${\times}$10$\^$-4/ eV/K)T$^2$/(T + 335 K. After the as-grown CuGaSe2 single crystal thin films was annealed in Cu-, Se-, and Ca-atmospheres, the origin of point defects of CuGaSe2 single crystal thin films has been investigated by the photoluminescence(PL) at 10 K The native defects of V$\_$CU/, V$\_$Se/, Cu$\_$int/, and Se$\_$int/ obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted CuGaSe2 single crystal thin films to an optical n-type. Also, we confirmed that Ga in CuGaSe2/GaAs did not form the native defects because Ga in CuGaSe2 single crystal thin films existed in the form of stable bonds.

• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 동계학술발표회 논문집
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• pp.227-228
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• 2006

• 한국광학회:학술대회논문집
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• 한국광학회 2006년도 동계학술발표회 논문집
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• pp.179-180
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• 2006

• 한국광학회:학술대회논문집
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• 한국광학회 2008년도 동계학술발표회 논문집
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• pp.273-274
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• 2008

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.386-391
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• 2003

Sing1e crystal $CuAlSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $410^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $CuAlSe_2$source at $680^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and double crystal X-ray diffraction (DCXD). The carrier density and mobility of single crystal $CuAlSe_2$ thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}\;s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuAlSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;2.8382\;eV\;-\;(8.86\;{\times}\;10^{-4}\;eV/K)T^2/(T\;+\;155K)$. After the as-grown single crystal $CuAlSe_2$ thin films were annealed in Cu-, Se-, and Al-atmospheres, the origin of point defects of single crystal $CuAlSe_2$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. And we concluded that the heat-treatment in the Cu-atmosphere converted single crystal $CuAlSe_2$ thin films to an optical n-type. Also, we confirmed that Al in $CuAlSe_2/GaAs$ did not form the native defects because Al in single crystal $CuAlSe_2$ thin films existed in the form of stable bonds.