• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.10
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• pp.876-882
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• 2000

ZnS phosphors were sintered at vacuum atmosphere, Sintered under the temperature of 950$\^{C}$, ZnS phosphors were grown into the sphalerite structure and two emission peaks were observed at the positions of 460nm and 528nm of the emission spectra. Sintered over the temperature of 1050$\^{C}$, there were simultaneously the sphalerite and wurtize structure in the ZnS phosphors and three emission peaks were observed at the positions of 440nm and 515nm of emission spectra. The emission peaks of 460nm obsrved under the sphalerite structure and 440nm observed under the wurtize structure were due to the vacancy of Zn formed in the ZnS phosphors. The emission peaks of 528nm observed under the sphalerite structure and 515nm observed under the wurtize structure wre caused by the radiative transitions from the level of the vacancy of S formed in the ZnS phosphors to the valance band.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.629-632
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• 2013

Many properties of inorganic compounds are sensitive to changes in the point-defect concentrations. In minerals, such changes are influenced by temperature, pressure, and chemical impurities. Olivines form an important class of minerals and are magnesium-rich solid solutions consisting of the orthosilicates forsterite $Mg_2SiO_4$ and the fayalite $Fe_2SiO_4$. Orthosilicates have an orthorhombic crystal structure and exhibit anisotropic electronic and ionic transport properties. We examined the anisotropy of the electrical conductivity of $Fe_2SiO_4$ under the assumption that the electronic conduction in $Fe_2SiO_4$ occurs via a small polaron hopping mechanism. The anisotropic electrical conductivity is well explained by the electron transfer integrals obtained from the spin dimer analysis based on tight-binding calculations. The latter analysis is expected to provide insight into the anisotropic electrical conductivities of other magnetic insulators of transition metal oxides.

• Journal of the Korean Vacuum Society
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• v.5 no.1
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• pp.39-47
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• 1996

The segregation of S in electrotransport-purified polycrystaline $\alpha$-Ti and Ti-aluminide alloys has been studied by Auger electron spectroscopy(AES), Ion scattering spectroscopy(ISS) and Secondary ion mass spectrometry(SIMS) in the temperature range extending from 20 to $1000^{\circ}C$. The chemisorbed oxygen and carbon on Ti were observed to disappear at T>$400^{\circ}C$ after which the S signal increased to levels approaching 0.5 monolayer. At lower temperatures the presence of the surface oxygen and carbon appeared to inhibit the segregation, presumably because there were no available surfaces sites for the S emerging from the bulk. The activation energy for the S segregation in pure polycrystaline Ti was determined to be 16.7 kcal/mol, which, when compared to S segretation from single-crystal Ti, is quite small and suggests grain boundary or defect diffusion segregation kinetics. In the Ti-aluminide alloys, the presence of Al appeared to enhance the retention of surface oxygen which, in turn, substantially reduced the S segretation. The $\gamma$ alloy, with its high Al content, exhibited the greatest retention of surface oxygen and the smallest quantity of the S segregation(T$\simeq1000^{\circ}C$).

• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.88-93
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• 2002

$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}:Co^{2+}$ + single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a= 5.5966A. c= 10.8042${{\AA}}$ for the pure. a= 5.6543${{\AA}}$. c= 10.8205${{\AA}}$ for the Co-doped single crystal. respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity. Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation. we can deduced the entropy. enthalpy and heat capacity. Also. we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_d$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.7
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• pp.760-763
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• 2004

We studied the nematic liquid crystaL(NLC) aligning capabilities using the new alignment material of a nitrogenated diamond-like carbon(NDLC) thin film. The NDLC thin film exhibits high electrical resistivity and thermal conductivity that are similar to the properties shown by diamond-like carbon (DLC) thin films. The diamond-like properties and nondiamond-like bonding make NDLC an attractive candidate for applications. A high pretilt angle of about 9.9$^{\circ}$ by ion beam(IB) exposure on the NDLC thin film surface was measured. A good LC alignment is achieved by the IB alignment method on the NDLC thin films surface at annealing temperature of 200 $^{\circ}C$. The alignment defect of the NLC was observed above annealing temperature of 250 $^{\circ}C$. Consequently, the high pretilt angle and the good LC alignment by the IB alignment method on the NDLC thin film surface can be achieved.

• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.379-381
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• 1994

Volume holograms recorded in photorefractive materials can find important applications in optical memories and optical computing systems. One problem with a photorefractive hologram is that it gets erased by the readout light. Nondestructive readout can be achieved by hologram fixing, and several fixing methods have been reported. Fixing is accomplished by thermally activated motion of an unknown ionic defect, which neutralizes the electronic space-charge patterns. At room temperature the ionic patterns are stabilized. When the electrons are partially redistributed by light, a net space-charge pattern appears, and tile fixed hologram can be read out. In this paper, theoretical modeling and some experimental results are presented for thermal fixing of volume phase holograms in photorefractive $LiNbO_3$:Fe. Thermal fixing can be done during or after recording and depends on fixing temperature ($100{\sim}200^{\circ}C$ range) and grating length. Fixed Slating can be erased completely at the temperature over $300^{\circ}C$. Theoretical modeling shows weil the compensation of electronic Slating by ionic grating and is in good agreement with experimental results. In experiments the dependence of thermal fixing on temperatures and grating lengths is investigated.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.160-162
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• 2003

ZnO epilayer were synthesized by the pulesd laser deposition(PLD) process on $Al_2O_3$ substrate after irradiating the surface of the ZnO sintered pellet by the ArF(193nm) excimer laser. The substrate temperatures was $400^{\circ}C$. The crystalline structure of epilayer was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of ZnO epilayer measured with Hall effect by van der Pauw method are $8.27{\times}10^{16}\;cm^{-3}\;and\;299\;cm^2V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the ZnO obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;=\;3.3973\;eV\;-\;(2.69{\times}10^{-4}\;eV/K)T^2/(T\;+\;463K)$. After the as-grown ZnO epilayer was annealed in Zn atmospheres, oxygen and vaccum the origin of point defects of ZnO atmospheres has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{Zn}$, Vo, $Zn_{int}$, and $O_{int}$ obtained by PL measurements were classified as a donors or accepters type.

• Corrosion Science and Technology
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• v.20 no.6
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• pp.384-390
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• 2021

In this paper, durability evaluation and surface damage mechanism were investigated through solid particle erosion (SPE) test after applying hot-dip aluminizing (HDA) technology for the purpose of maintenance of marine economizer tube. Damaged surface shape was analyzed using SEM and 3D microscope. Compositional changes and microstructure of the HDA layer were analyzed through EDS and XRD. Durability was evaluated by analyzing weight loss and surface damage depth after SPE. HDA was confirmed to have a two-layer structure of Al and Al₅Fe₂. HDA+HT was made into a single alloy layer of Al₅Fe₂ by diffusion treatment. In the microstructure of HDA+HT, void and crack defect were induced during the crystal phase transformation process. The SPE damage mechanism depends on material properties. Plastic deformation occurred in the substrate and HDA due to ductility, whereas weight loss due to brittleness occurred significantly in HDA+HT. As a result, the substrate and HDA showed better SPE resistance than HDA+HT.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.3
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• pp.113-116
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• 2010

We report on the growth and characteristics of the structural and optical properties of InGaN nano-structures doped with antimony (Sb) as a catalyst. The use of catalyst has been explored to modify the growth and defect generation during strained layer heteroepitaxial growth. We performed the growth of the InGaN nano-structures on c-sapphire substrates using mixed-source hydride vapor phase epitaxy (HVPE). The characteristic of samples was measured by scanning electron microscope (SEM) and photoluminescence (PL). The aligning direction of c-axis of the InGaN nano-structures was changed from vertical to parallel or inclined to the surface of substrates when the Sb was added as a catalyst. The indium composition was estimated about 3.2% in both cases of with or without the addition of Sb in the InxGal-xN structures. From the results of InGaN nano-structures formed with the addition of Sb, we can expect the performance of optical devices would be more improved by reduced piezo-electric field if we use the InGaN nano-structures of which c-axes are aligned parallel to the substrates as an active layer.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.24 no.5
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• pp.196-201
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• 2014

We investigated defects and surface polarity in AlN and GaN by using wet chemical etching. Therefore, the effectiveness and reliability of estimating the single crystals by defect selective etching in NaOH/KOH eutectic alloy have been successfully demonstrated. High-quality AlN and GaN single crystals were etched in molten NaOH/KOH eutectic alloy. The etching characteristics and surface morphologies were carried out by scanning electron microscope (SEM) and atomic force microscope (AFM). The etch rates of AlN and GaN surface were calculated by etching depth as a function of etching time. As a result, two-types of etch pits with different sizes were revealed on AlN and GaN surface, respectively. Etching produced hexagonal pits on the metal-face (Al, Ga) (0001) plane, while hexagonal hillocks formed on the N-face. On etching rate calibration, it was found that N-face had approximately 109 and 15 times higher etch rate than the metal-face of AlN and GaN, respectively. The size of etch pits increased with an increase of the etching time and they tend to merge together with a neighbouring etch pits. Also, the chemical mechanism of each etching process was discussed. It was found that hydroxide ion ($OH^-$) and the dangling bond of nitrogen play an important role in the selective etching of the metal-face and N-face.