• 한국결정성장학회지
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• 제11권6호
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• pp.259-263
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• 2001

The continuum model of transient point defect dynamics to predict the concentrations of interstitial and vacancy is established by estimating expressions for the thermophysical properties of intrinsic point defects. And the point defect distribution in a Czochralski-grown 200 mm silicon crystal and the location of oxidation-induced stacking fault ring(OiSF-ring) created during the cooling of crystals are calculated by using the numerical analysis. The purpose of this paper is to show that his approach lead to predictions that are consistent with experimental results. Predicted point defect distributions by transient point defect dynamic analysis are in good qualitative agreement with experimental data under widely and abruptly varying crystal pull rates when correlated with the position of the OiSF-ring .

• Current Photovoltaic Research
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• 제8권1호
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• pp.17-26
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• 2020

It is clear that monocrystalline Silicon (Si) ingots are the key raw material for semiconductors devices. In the present industries markets, most of monocrystalline Silicon (Si) ingots are made by Czochralski Process due to their advantages with low production cost and the big crystal diameters in comparison with other manufacturing process such as Float-Zone technique. However, the disadvantage of Czochralski Process is the presence of impurities such as oxygen or carbon from the quartz and graphite crucible which later will resulted in defects and then lowering the efficiency of Si wafer. The heat transfer plays an important role in the formation of Si ingots. However, the heat transfer generates convection in Si molten state which induces the defects in Si crystal. In this study, a crystal growth simulation software was used to optimize the Si crystal growth process. The furnace and system design were modified. The results showed the melt-crystal interface shape can affect the Si crystal growth rate and defect points. In this study, the defect points and desired interface shape were controlled by specific crystal growth rate condition.

• Journal of Information Display
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• 제4권1호
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• pp.1-8
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• 2003

Recent progress in both low pretilt and high pretilt defect free C1 surface stabilized ferroelectric liquid crystal (SSFLC) devices is reviewed. First, by numerical calculation to investigate the balance between surface azimuthal anchoring energy and bulk elastic energy within the confined chevron layer geometry of C1 and C2, it is possible to achieve a zigzag free C1 state by low azimuthal anchoring alignment with a low pretilt angle. The critical azimuthal anchoring coefficient for defect free C1 state is calculated. Its relationship with elastic constant, chevron angle as well as surface topography effect are also discussed. Second, using $5^{\circ}$ oblique SiO deposition alignment method a defect free, large memory angle, high contrast ratio and bistable C1 SSFLC display, which has potential for electronic paper applications has also been developed. The electrooptical properties and bistability of this device have been investigated. Various aspects of defect control are also discussed.

• 한국정보통신학회논문지
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• 제9권8호
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• pp.1793-1798
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• 2005

액정 디스플레이 소자의 디렉터 내에서 결점을 모델링 할 수 있는 fast Q-텐서법을 이용하여 불균일한 표면에서 발생할 수 있는 결점의 발생과 움직임에 대한 모델링을 하였다. 결점을 모델링하기 위하여 $1{\mu}m$ 단차의 전극을 가진 수직배향셀을 이용하였다. 모델링을 통하여 단차에서 발생하는 액정 디렉터 내에서의 결점의 발생과 결점선을 확인할 수 있었으며 이러한 결과는 실험을 통하여 확인하였다.

• 한국광학회:학술대회논문집
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• 한국광학회 2002년도 하계학술발표회
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• pp.94-95
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• 2002

Photonic crystal (PC) has special interests for their promising applications in three-dimensional photon control and integrated devices. In a nonlinear photonic crystal (NPC), optical intensity in a defect layer is greatly increased due to the location function of NPC and nonlinearity. The nonliearity of the defect layer is very much enhanced because the group velocity is reduced and the interaction time between light and nonlinear medium in the defect layer is enlarged. (omitted)

• 한국결정학회지
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• 제11권3호
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• pp.176-181
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• 2000

Computer-based atomistic simulation methods are applied to address quantitatively the crystal defect chemistry of strontium hexaaluminate, SrAl/sub 12/O/sub 19/. Our calculations show that oxygen Frenkel disorder is the dominant intrinsic defect mode to be expected in the multi-component oxide, though Schottky disorder may also exist. When La and Mg enter into SrAl/sub 12/O/sub 19/. Mg prefers to occupy Al(3)4f tetrahedral sites in the magnetoplumbite structure. Our calculations also indicate that O/sub Sr/ defect is improbable in the structure.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1096-1100
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• 2003

A fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field is presented. The method is used to model the defect dynamics occurring during the "warm-up" of a ${\pi}-cell$ device.

• Journal of the Optical Society of Korea
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• 제9권2호
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• pp.74-78
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• 2005

With the fast Q-tensor method, which can model the defect dynamics in a liquid crystal director field, the nucleation and dynamical behavior of defects is modeled. In order to model the defect, hormeotropic aligned liquid crystal cell with step inhomogeneous electrode which has a height of $1\;{\mu}m$ is used. From the simulation, we can observe the nucleation and line of the defect from surface inhomogeneity and the experiment is performed for confirmation. The experimental result is compared with numerical modeling in order to verify the simulation of the defect nucleation.

• 한국결정성장학회지
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• 제20권6호
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• pp.249-253
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• 2010

A-자리 경함 perovskite $La_{1/3}NbO_3$ 단결정 시편을 제작하여 10~800 K 온도범위에서 유전특성을 조사하였다. 50 K와 650 K 부근에서 유전이상이 나타났으며, 고온영역(약 650 K)에서 유전상수의 thermal hysterisis가 크게 나타났다. 교류전도도 측정으로부터 560~690 K에서 입내 활성화 에너지는 0.43 eV로 가장 낮게 나타났다. 이들의 결과로부터 50 K 부근의 dielectric anomaly는 $Nb^{5+}$-이온의 antiparallel 변위에 기인한 것이며, 650 K 부근의 dielectric anomaly는 $La^{3+}$-이온의 재배열에 기인한 것으로 추측된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.257-265
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• 2002

A stoichiometric mixture of evaporating materials for AgInS$_2$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, AgInS$_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy(HWE) system. The source and substrate temperatures were 680 $^{\circ}C$ and 410 $^{\circ}C$, respectively. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of AgInS$_2$ single crystal thin films measured from Hall effect by van der Pauw method are 9.35${\times}$10$\^$16/ cm$\^$-3/ and 294 $\textrm{cm}^2$/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of the energy band gap on AgInS$_2$ single crystal thin films was found to be E$\_$g/(T) : 2.1365 eV - (9.89 ${\times}$ 10$\^$-3/ eV) T$^2$/(2930 + T). After the as-grown AgInS$_2$ single crystal thin films was annealed in Ag-, S-, and In-atmospheres, the origin of point defects of AgInS$_2$ single crystal thin films has been investigated by using the photoluminescence(PL) at 10 K. The native defects of V$\_$AG/, V$\_$S/, Ag$\_$int/, and S$\_$int/ obtained from PL measurements were classified as a donors or acceptors type. And we concluded that the heat-treatment in the S-atmosphere converted AgInS$_2$ single crystal thin films to an optical p-type. Also, we confirmed that In in AgInS$_2$/GaAs did not form the native defects because In in AgInS$_2$ single crystal thin films did exist in the form of stable bonds.