• Title/Summary/Keyword: crystal

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Growth and Study on Photo current of Valence Band Splitting for $AgGaSe_2$ single crystal thin film by hot wall epitaxy (Hot Wall Epitaxy(HWE)법에 의한 $AgGaSe_2$ 단결정 박막 성장과 특성)

  • Park, Chang-Sun;Hong, Kwang-Joon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.11a
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    • pp.85-86
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    • 2006
  • Single crystal $AgGaSe_2$ layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at $420^{\circ}C$ with hot wall epitaxy (HWE) system by evaporating $AgGaSe_2$ source at $630^{\circ}C$. The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The temperature dependence of the energy band gap of the $AgGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)=19501 eV-(879{\times}10^{-4} eV/K)T^2/(T+250 K)$.

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The Growth and Optical Properties of $MgGa_2Se_4$ Single Crystal ($MgGa_2Se_4$ 단결정의 성장과 광학적 특성)

  • 김형곤;이광석;이기형
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.25 no.4
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    • pp.402-406
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    • 1988
  • The MgGa2Se4 single crystal for study of optical properties is for the first time grown by Bridgmna method. The crystal structure of grown MgGa2Se4 single crystal has the Rhomobohedral structure (R3m) and its lattice constant are a=3.950\ulcorner c=38.893\ulcornerin Hexagonal structure. The energy band structure of grown MgGa2Se4 single crystal structure has direct band gap and the optical energy gap measured from optical absorption in this crystal is 2.20eV at 290K. The temperature dependence of energy gap was given Eg(T)=Eg(O)-aT\ulcorner)B+T), from varshni equation, where Eg(O)=2.34eV, a=8.79x10**-4eV/and b=250K.

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Computer Simulation of Hemispherical Forming Process Texture-based Work hardening and Anisotropy (집합조직 기초 가공경화와 이방성에 의한 반구 성형공정의 전산 시뮬레이션)

  • Sim, J.K.;Keum, Y.T.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2006.05a
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    • pp.199-202
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    • 2006
  • The hardening and anisotropy based on the crystal plasticity is considered in the numerical simulation of hemispherical sheet forming process to find more realistic simulation results For calculating the yield shear stresses of each crystal, Taylor's model of the crystalline aggregate is employed. The yield stress of crystalline aggregate is computed by averaging the yield stresses of the crystal. The hardening is evaluated by using the Taylor factor and the critical resolved shear stress of the crystal. In addition, by observing the crystallographic texture and slip system, the anisotropy of the sheet is traced during the forming process. The anisotropy and hardening behaviors of the sheet found by the crystal plasticity are described better than those of obtained from the Hill's quadratic criterion based on the continuum plasticity.

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Alteration of Physical Properties of Nanoparticle Embedded liquid Crystal Causing the Enhancement of the Performance of LCDs

  • Kobayashi, Shunsuke;Kineri, Tohru;Takatoh, Kohki;Akimoto, Mitsuhiro;Hoshi, Hajime;Nishida, Naoto;Toshima, Naoki;Sano, Satoru
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.1473-1476
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    • 2008
  • Doping the nanoparticles of Pd, p-$BaTiO_3$, $SiO_2$ and MgO into LCs alters their physical properties such as $K_{ii}$, $\Delta\varepsilon$, ${\Delta}n$, $\gamma_1$ and $T_{NI}$. Except for $K_{33}$, all these parameters decreases and thus bring the reduction of operating voltage and/or response times.

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Advanced Liquid Crystal Materials for Fast Switching Times

  • Jin, Min-Ok;Yoon, Dong-Kyu;Kim, Eun-Young;Lee, Seung-Eun;Heckmeier, M.;Klasen-Memmer, M.;Sem, G L;Tarumi, K.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2003.07a
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    • pp.1118-1120
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    • 2003
  • For LCD-TVs with full capability to show moving pictures and LCD monitors for multi media use, it is necessary that the switching times of Liquid Crystal (LC) mixtures are within one frame (16.7ms). In order to achieve faster switching times, new LC materials have been identified, mainly focusing on the further reduction of the rotational viscosity (${\gamma}1$).

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The Electrical Properties of Ag2Se Single Crystal (Ag2Se 단결정의 전기적 특성)

  • Kim, Nam-oh;Min, Wan-Ki;Kim, Hyung-gon;Oh, Gum-kon;Hyun, Seung-cheol
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.53 no.1
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    • pp.28-31
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    • 2004
  • The results of investigations of Ag2Se single crystal are presented. $Ag_2Se$ crystal was grown by the Bridgman method. The $Ag_2Se$ single crystal was an orthorhombic structure with lattice constance $a=4.333{\AA}$, $b=7.062{\AA}$, $c=7.764{\AA}$. Hall effect shows a n-type conductivity in the $Ag_2Se$ single crystal. The electrical resistivity was $1.25{\times}10^3ohm^{-1}^cm{-1}$ and electron mobility was $-5.48{\times}10^3cm^2/V{\cdot}sec$ at room temperature(RT).

Effects of Rotation on the Czochralski Silicon Single Crystal Growth (초크랄스키법에 의한 실리콘 단결정성장에서 회전효과가 미치는 영향에 대한 연구)

  • 김무근
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.19 no.5
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    • pp.1308-1318
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    • 1995
  • The influence of varying rotation speed of both crystal and crucible was numerically investigated for the Czochralski silicon-crystal growth. Based on a simplified model assuming flatness of free surfrae, the Navier-Stokes Boussinesq equations were employed to identify the flow pattern, temperature distribution as well as the shape of the melt/crystal interface. The present results showed that the interface shape was relatively convex with respect to the melt at lower pulling rate and tended to be concave as the pulling rate increased. In particular, the experimentally observed gull-winged shape of the interface was qualitatively in agreement with the predicted shape. The rotation of crystal alone little affected the growth system. When the rotation speed of the crucible was increased, there occurred inversion of the interface shape from convex to concave pattern. At rapid rotation of the crucible, an interesting channel formation was predictied primarily due to the assumption of laminar flow.

An Experimental Study on Temperature and Velocity Fields of the Turbulent Flows Horizontal Cylindrical Tube by Using Thermo-sensitive Liquid Crystal (수평원통 관에서 감온액정을 이용한 난류유동의 온도 및 속도장에 관한 실험적 연구)

  • 장태현;도덕희
    • Journal of Advanced Marine Engineering and Technology
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    • v.27 no.7
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    • pp.921-929
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    • 2003
  • An experimental investigation was performed to study the characteristics of turbulent water flow in a horizontal circular tube by using liquid crystal. To determine some characteristics of the turbulent flow, 2D PIV technique is employed for velocity measurement and liquid crystal is used for heat transfer experiments in water. Temperature visualization was made quantitatively by calibrating the color of the liquid crystal versus temperature using various approaches (TLC technique: Thermochromic Liquid Crystal), and a neural-network algorithm was applied to the color-to-temperature calibration. This study shoud the temperature and time-mean velocity distribution for Re = 2,436, 2,500 and 2,724 along longitudinal sections and the results appear to be physically reasonable.

Grain growth and superconducting properties of melt-processed (Y-Sm-Nd)-Ba-Cu-O composite oxides

  • Kim, So-Jung
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.15 no.4
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    • pp.141-144
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    • 2005
  • [ $(Y_{0.5}Sm_{0.25}Nd_{0.25})Ba_2Cu_3O_y$ ] [(YSN)-123] high $T_c$ composite superconductors with $CeO_2$ addition were systematically investigated by top seeded melt growth (TSMG) process in air atmosphere. A melt textured $NdBa_2Cu_3O_y$ (Nd-123) single crystal was used as a seed for achieving the c-axis alignment large grains perpendicular to the surface of (YSN)-123 composite oxides. The size of $(Y_{0.5}Sm_{0.25}Nd_{0.25})_2BaCuO_5$ [(YSN)211] nonsuperconducting inclusions of the melt textured (YSN)-123 samples with $CeO_2$ addition were remarkably reduced and uniformly distributed within the (YSN)123 superconducting matrix except in the region very close to the Nd-123 seed crystal. The sample showed a sharp superconducting transition of 91 K.