• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.4B no.2
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• pp.54-58
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• 2004

This paper presents the iron core design method of a high temperature superconducting (HTS) transformer considering voltages per turn (V/T). In this research, solenoid type HTS coils were selected for low voltage (LV) winding and double pancake coils for high voltage (HV) winding, just as in conventional large power transformers. V/T is one of the most fundamental elements used in designing transformers, as it decides the core cross sectional area and the number of primary and secondary winding turns. By controlling the V/T, the core dimension and core loss can be changed diversely. The leakage flux is another serious consideration in core design. The magnetic field perpendicular to the HTS wire causes its critical current to fall rapidly as the magnitude of the field increases slowly. Therefore in the design of iron core as well as superconducting windings, contemplation of leakage flux should be preceded. In this paper, the relationship between the V/T and core loss was observed and also, through computational calculations, the leakage magnetic fields perpendicular to the windings were found and their critical current decrement effects were considered in relation to the core design. The ％ impedance was calculated by way of the numerical method. Finally, various models were suggested.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.8
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• pp.13-19
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• 2010

A design method of railway wheel profile with objective function of equivalent conicity considering wheel dimension constraint, two points contact problem between wheel and rail was proposed. New design method shows good results. New wheel profile generated from optimization process shows better dynamic performance compared with initial profile as the purpose of wheel profile design. And to verify the design method with testing the stability of new wheel profile, we conducted a critical speed test for new wheel profile using scale model applied scaling method of railway vehicle dynamics. The result of critical speed test show good agreement with that of numerical analysis. From the above results, it is seen that the design method with objective function of equivalent conicity is feasible and it could be applied to design new wheel profile efficiently.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.80-83
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• 2003

$SrSO_4$ were systematically added on Bi2212 from 0 to 10wt% to study the effect of Bi2212 superconductor tube characteristics. After mixing, the melted solution of Bi2212 and $SrSO_4$ was initially poured into the cylinder type of steel mold preheated at $550^{\circ}C$ for 30min and rotated at 1000rpm. Following that, tube was annealed at $840^{\circ}C$ for 72hrs. The tube dimension was 60 in diameter, 60mm in length and 2mm in thickness. XRD data suggests that there was no typical segregation phase related with $SrSO_4$. Well textured grain with typical 2212 phase was observed and average size was $20{\mu}m$. The measured critical current and critical current density of Bi2212 tube added by 5% $SrSO_4$ at 77K were 495A and $202A/cm^2$ respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STD structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters. we studied the correlation between CMP thickness of STI using high selectivity slurry. DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased. the N-poly foot is deteriorated. and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point,, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by $100\AA$. 3.2 $u\AA$ of IDSN is getting better in base 1 condition. In POE 50% condition. 1.7 $u\AA$ is improved. and 0.7 $u\AA$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.181-184
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• 2001

Chemical Mechanical Polishing(CMP) of Shallow Trench Isolation(STI) structure in 0.18 m semiconductor device fabrication is studied. CMP process is applied for the STI structure with and without reverse moat pattern and End Point Detection (EPD) method is tested. To optimize the transistor properties related metal 1 parameters, we studied the correlation between CMP thickness of STI using high selectivity slurry, DOE of gate etch recipe, and 1st metal DC values. Remaining thickness of STI CMP is proportional to the thickness of gate-etch process and this can affect to gate profile. As CMP thickness increased, the N-poly foot is deteriorated, and the P-Poly Noth is getting better. If CD (Critical Dimension) value is fixed at some point, all IDSN/P values are in inverse proportional to CMP thickness by reason of so called Profile Effect. Weve found out this phenomenon in all around DOE conditions of Gate etch process and we also could understand that it would not have any correlation effects between VT and CMP thickness in the range of POE 120 sec conditions. As CMP thickness increased by 100 ${\AA}$, 3.2 u${\AA}$ of IDSN is getting better in base 1 condition. In POE 50% condition, 1.7 u${\AA}$ is improved, and 0.7 u${\AA}$ is improved in step 2 condition. Wed like to set the control target of CD (critical dimension) in gate etch process which can affect Idsat, VT property versus STI topology decided by CMP thickness. We also would like to decide optimized thickness target of STI CMP throughout property comparison between conventional STI CMP with reverse moat process and newly introduced STI CMP using high selectivity slurry. And we studied the process conditions to reduce Gate Profile Skew of which source known as STI topology by evaluation of gate etch recipe versus STI CMP thickness.

• The Journal of Korean Academy of Prosthodontics
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• v.62 no.1
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• pp.64-71
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• 2024

The most critical aspect of full-arch prosthodontic treatment is evaluating whether the patient's vertical occlusal dimension is appropriate, and if necessary, restoring it through increasing vertical dimension. If the vertical occlusal dimension is too low, it can lead to reduced chewing efficiency, as well as not only aesthetic concerns but also potential issues like hyperactivity of muscles and posterior displacement of the mandible. This report is about the patient dissatisfied with pronunciation and aesthetics due to an inappropriate vertical occlusal dimension resulting from prior prosthetic interventions, underwent full-arch prosthodontic restoration treatment. Through the utilization of digital diagnostic apparatus, a comprehensive evaluation was undertaken for patient's vertical occlusal dimension, occlusal plane orientation, and the condition of prosthetic restorations. Through 3D facial scanning, the facial landmarks were discerned, and subsequently, the new occlusal plane was established. This provided the foundation for a digitally guided diagnostic wax-up. An elevation of 5 mm from the incisor was determined. Comprehensive dental rehabilitation was then executed for all remaining teeth, excluding the maxillary four incisors. The treatment protocol followed a systematic approach by initially creating implant-supported restorations on both sides of the dental arch to establish a stable occlusal contact. Subsequently, prosthetic restorations for the natural dentition were generated. Diagnostic and treatment planning were established through the utilization of facial scanning. This subsequently led to a reduction in treatment complexity and an expedited treatment timeline.

• Korean Journal of Social Welfare Studies
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• v.44 no.2
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• pp.465-497
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• 2013

This paper criticizes the ontological and epistemological dichotomy in social sciences including social welfare and probes into Critical Realism as an alternative paradigm. Many theories for social welfare have adhered to dichotomous ontological standpoint, 'agency' vs. 'social structure', and Eco-system approach have occupied dominant position to integrate this dichotomy. These theoretical standpoint have had great influence on social work practice. On the other hand, dichotomous epistemological standpoint which is constituted of different views of phenomena, 'positivism' and 'constructionism', have had great influence on social work research and practice. These dichotomous ontological and epistemological approach have a limit to reveal qualitative nature of the relationship between agency and social structure, to ponder the deeper reality, the mechanism of stratified reality, and the reality being independent of agency. Replacing these approaches, Critical Realism unfold the theoretical potential as an alternative paradigm for social welfare through the discussion on stratified realty(the empirical, the actual, and the real), intransitive/transitive dimension, double hermeneutics in these dimensions, and the conditions for conceptualization, duality of structure and practice, transformation model of agency and structure.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.136.2-136.2
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• 2015

반도체 제조는 chip의 성능 향상 및 단가 하락을 위해 지속적으로 pattern size가 nano size로 감소해 왔고, capacitor 용량은 증가해 왔다. 이러한 현상은 contact hole의 aspect ratio를 지속적으로 증가시킨바, 그에 따라 최적의 HARC (high aspect ratio contact)을 확보하는 적합한 dry etch process가 필수적이다. 그러나 HARC dry etch process는 많은 critical plasma properties 에 의존하는 매우 복잡한 공정이다. 따라서, critical plasma properties를 적절히 조절하여 higher aspect ratio, higher etch selectivity, tighter critical dimension control, lower P2ID과 같은 plasma characteristics을 확보하는 것이 요구된다. 현재 critical plasma properties를 제어하기 위해 다양한 plasma etching 방법이 연구 되어왔다. 이 중 plasma를 낮은 kHz의 frequency에서 on/off 하는 pulsed plasma etching technique은 nanoscale semiconductor material의 etch 특성을 효과적으로 향상 시킬 수 있다. 따라서 본 실험에서는 dual-frequency capacitive coupled plasma (DF-CCP)을 사용하여 plasma operation 동안 duty ratio와 pulse frequency와 같은 pulse parameters를 적용하여 plasma의 특성을 각각 제어함으로써 etch selectivity와 uniformity를 향상 시키고자 하였다. Selective SiO2 contact etching을 위해 top electrode에는 60 MHz pulsed RF source power를, bottom electrode에는 2MHz pulse plasma를 인가하여 synchronously pulsed dual-frequency capacitive coupled plasma (DF-CCP)에서의 plasma 특성과 dual pulsed plasma의 sync. pulsing duty ratio의 영향에 따른 etching 특성 등을 연구 진행하였다. 또한 emissive probe를 통해 전자온도, OES를 통한 radical 분석으로 critical Plasma properties를 분석하였고 SEM을 통한 etch 특성분석과 XPS를 통한 표면분석도 함께 진행하였다. 그 결과 60%의 source duty percentage와 50%의 bias duty percentage에서 가장 향상된 etch 특성을 얻을 수 있었다.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.24 no.4
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• pp.73-80
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• 2010

The grounding impedance is not lowered by expanding the dimension of the grounding electrode, and the length of grounding electrode which shows the minimum value of the grounding impedance for each condition of frequency and soil characteristics is existent, and it is defined as Critical Length. In this paper, a new distributed parameter circuit model considering the condition of the multi-layered soil structures was proposed, and the grounding impedance and critical length of the vertical grounding electrode were analyzed by using the newly proposed simulation model and the MATLAB program. As a consequence, it was found that the effect of the soil structure on the frequency-dependent grounding impedance and critical length of the vertical grounding electrode is significant. It is desirable to consider the soil structure in optimal design of the grounding system.