• 공업화학
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• 제16권4호
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• pp.485-490
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• 2005

유동층 전극 반응기에서 기체의 주입이 산업폐수로부터 동입자의 회수에 미치는 영향을 고찰하였다. 유동층 전극 반응기에서 액체유속(0.1~0.4 cm/s), 전류밀도($2.0{\sim}3.5A/dm^2$) 그리고 투입되는 유동 고체입자의 양(1.0~4.0 wt%)의 일정조건에서 기체의 주입(0.1~0.4 cm/s)이 각 상들의 체류량과 동입자 회수효율에 미치는 영향을 검토하였다. 유동 고체 입자로는 폴리 스틸렌과 DVB (Divinyl Benzene)로 구성된 직경 0.5 mm의 구형입자(swelling 밀도: $1100kg/m^3$)를 사용하였다. 유동층 전극반응기에서 주입되는 기체 유속이 증가함에 따라 고체 체류량과 기체 체류량은 증가하는 반면 액체 체류량은 감소하는 경향을 나타내었다. 반응기내에 기체를 0.1~0.2 cm/s 정도 주입한 경우 기체 주입전에 비해 동 회수율이 증가한 반면 0.3~0.4 cm/s 이상 주입하면 기체 주입전보다 동 회수율은 오히려 감소하는 것으로 나타났다. 유동층 반응기에서 기체 및 액체 유속, 두 전극간 거리 그리고 유동고체입자의 양이 증가함에 따라 동의 회수율은 증가하다가 최대의 회수율을 나타낸 후 점점 감소하는 경향을 나타내었다. 전류밀도가 증가함에 따라서 동의 회수율은 패러데이 법칙에 의해 거의 선형적인 증가를 나타내었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.546-546
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• 2008

Copper (Cu) Chemical mechanical polishing (CMP) has been an essential process for Cu wifing of DRAM and NAND flash memory beyond 45nm. Copper has been employed as ideal material for interconnect and metal line due to the low resistivity and high resistant to electro-migration. Damascene process is currently used in conjunction with CMP in the fabrication of multi-level copper interconnects for advanced logic and memory devices. Cu CMP involves removal of material by the combination of chemical and mechanical action. Chemicals in slurry aid in material removal by modifying the surface film while abrasion between the particles, pad, and the modified film facilitates mechanical removal. In our research, we emphasized on the role of chemical effect of slurry on Cu CMP, especially on the effect of amine functional group on removal rate selectivity between Cu and Tantalum-nitride (TaN) film. We investigated the two different kinds of complexing agent both with amine functional group. On the one hand, Polyacrylamide as a polymer affected the stability of abrasive, viscosity of slurry and the corrosion current of copper film especially at high concentration. At higher concentration, the aggregation of abrasive particles was suppressed by the steric effect of PAM, thus showed higher fraction of small particle distribution. It also showed a fluctuation behavior of the viscosity of slurry at high shear rate due to transformation of polymer chain. Also, because of forming thick passivation layer on the surface of Cu film, the diffusion of oxidant to the Cu surface was inhibited; therefore, the corrosion current with 0.7wt% PAM was smaller than that without PAM. the polishing rate of Cu film slightly increased up to 0.3wt%, then decreased with increasing of PAM concentration. On the contrary, the polishing rate of TaN film was strongly suppressed and saturated with increasing of PAM concentration at 0.3wt%. We also studied the electrostatic interaction between abrasive particle and Cu/TaN film with different PAM concentration. On the other hand, amino-methyl-propanol (AMP) as a single molecule does not affect the stability, rheological and corrosion behavior of the slurry as the polymer PAM. The polishing behavior of TaN film and selectivity with AMP appeared the similar trend to the slurry with PAM. The polishing behavior of Cu film with AMP, however, was quite different with that of PAM. We assume this difference was originated from different compactness of surface passivation layer on the Cu film under the same concentration due to the different molecular weight of PAM and AMP.

• 대한기계학회논문집A
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• 제33권10호
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• pp.1023-1028
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• 2009

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-step CMP consists of Cu and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the chemical mechanical cleaning(CMC) is performed various conditions as a cleaning process. The CMC process combined mechanical cleaning by friction between a wafer and a pad and chemical cleaning by CMC solution consists of tetramethyl ammonium hydroxide (TMAH) / benzotriazole (BTA). This paper studies the removal of abrasive on the Cu wafer and the cleaning efficiency of CMC process.

• Journal of Mechanical Science and Technology
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• 제16권9호
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• pp.1175-1182
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• 2002

The commercial viability of heat exchanger is mainly dependent on its long-term fouling characteristic because the fouling increases the pressure loss and degrades the thermal performance of a heat exchanger. An experimental study was performed to investigate the characteristics of fluid flow and heat transfer in a fluidized bed heat exchanger with circulating various solid particles. The present work showed that the higher densities of particles had higher drag force coefficients, and the increases in heat transfer were in the order of sand, copper, steel, aluminum, and glass below Reynolds number of 5,000.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2001년도 추계학술대회논문집A
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• pp.73-79
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• 2001

In this paper, shielding effectiveness(SE) of the shielding material of electromagnetic(EM) waves was investigated with actual experiments. The materials used in this study were made up of sputtering, film and powder of conductive materials - Cr, Al, Ag and Cu etc. Also, the polyester film was used as a base material. The experiment was carried out by using a shielding evaluator(Shielding box) TR17302 with an ADVANTEST spectrum analyzer, model R3361C. It was found from the experimental results that silver, copper, aluminum and chromium were good candidates as a shielding material against the EM waves with increasing the SE as the composite was laminated. The characteristics of the SE against the EM waves depended on a mode of preparation of specimen. The effects of density of particles on the SE were studied when the sputtering. The SE strongly depended on the electric resistance by density of sputtering and painting particles. SE increased as the density of particles was increasing.

• 대한기계학회:학술대회논문집
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• 대한기계학회 2008년도 추계학술대회A
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• pp.1880-1884
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• 2008

Cleaning is required following CMP (chemical mechanical planarization) to remove particles. The minimization of particle residue is required with each successive technology generation, and the cleaning of wafers becomes more complicated. In copper damascene process for interconnection structure, it utilizes 2-steop CMP consists of Cu CMP and barrier CMP. Such a 2-steps CMP process leaves a lot of abrasive particles on the wafer surface, cleaning is required to remove abrasive particles. In this study, the buffing is performed various conditions as a cleaning process. The buffing process combined mechanical cleaning by friction between a wafer and a buffing pad and chemical cleaning by buffing solution consists of tetramethyl ammonium hydroxide (TMAH)/benzotriazole(BTA).

• 한국주조공학회지
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• 제2권1호
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• pp.12-18
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• 1982

The present investigation was made to abtain a fine distribution of Pb Particles in AL - Pb binary alloys , which have a broad miscibility gap and large specific difference, by means of rapid Cooling of the molten alloys. Al-2.4% Pb, Al-5.5wt% Pb and Al-8.0wt % Pb alloy were used. The rapid cooling operation was performed by free falling of homogeneous liquid Al-Ph alloys into the water-cooled copper mold, and thermal analysis was made. Microstructures were observed, and variations of size and number of Pb particles were analysicle analyzer. By the result of examination with the varing cooling rates 100 to $210^{\circ}C/sec$ fine distributions of Pb particles were obtained with high cooling rate. Under same cooling condition, the best rapid cooling effect was recognized in Al-5.5wt% Pb alloy.

• 분석과학
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• 제8권4호
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• pp.411-418
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• 1995

A method for the direct determination of elemental content in each of aerosol particles by inductively coupled plasma atomic emission (ICP-AES) or mass spectrometry (ICP-MS) is described. This method is based upon the introduction of diluted aerosol into an ICP and the measurement of either the flash emission intensities of an atomic spectral line or ion intensities. A pulse-height analyzer is used for the measurement of the distribution of the elemental content. In order to calibrate the measuring system, monodisperse aerosols are used. The potentials of the method are shown by demonstrating the copper emission signals from the aerosols generated at a small electric switch, a study of the relation between the decreasing rate of particle number density and particle size, and measurements of calcium contents in the individual biological cells.

• Advances in nano research
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• 제3권3호
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• pp.169-176
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• 2015

Iron nanoparticles were made by using the modified coprecipitation technique. Usually the characteristics of synthesised particles depend upon the process parameters such as the ratio of the iron ions, the pH of the solution, the molar concentration of base used, type of reactants and temperature. A modified coprecipitation method was adopted in this study. A magnetic stirrer was used for mixing and the morphology and nature of particles were observed after synthesis. Nanoparticles were characterised through XRD. Obtained nanoparticles showed the formation of magnetite and maghemite under citric acid and oxalic acid as stabilisers respectively. The size of nanoparticle was greatly affected by the use of different types of stabilisers. Results show that citric acid greatly reduced the obtained particle size. Particle size as small as 13 nm was obtained in this study. The effects of different kinds of nucleating agents were also observed and two different types of nucleating agents were used i.e. potassium hydroxide (KOH) and copper chloride ($CuCl_2$). Results show that the use of nucleating agent in general pushes the growth phase of nanoparticles towards the end of coprecipitation reaction. The particles obtained after addition of nucleating agent were greater in size than particles obtained by not utilising any nucleating agent. These particles have found widespread use in medical sciences, energy conservation and electronic sensing technology.

• 한국주조공학회지
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• 제17권5호
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• pp.480-487
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• 1997

Particle reinforced metal matrix composites(MMCs) via a centrifugal spray-cast deposition(CSD) process were fabricated by injecting second phase particles($Al_2O_3$<40${\mu}m$, W<17.3${\mu}m$) into copper melt on the atomizing disc. Compositing modes were investigated by combining microstructures and mathematical modeling between Cu droplets and the reinforced particles injected. The $Cu/W_P$ powders were shown that the W particles penetrate and get embedded in the Cu droplets. It is considered that the W particles composite preferentially in Cu melt on the atomizing disc. On the other hand, the $Al_2O_3$, particles did not penetrate into the Cu droplets on the atomizing disc but get attached in surface of Cu droplets during the flight. It is considered that the compositing may be attained in the flight distance which the relative velocity between Cu droplet and $Al_2O_3$, particle is maximum. The microstructure of the $Cu/W_P$ and the $Cu/(Al_2O_3)_p$ composite preform was strongly influenced by compositing modes of droplets, and after subsequent deposition it was comprised as it is called the dispersed type and the cell type of microstructure, respectively.