• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 1998년도 추계종합학술대회
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• pp.165-168
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• 1998

Re-oxidized nitrided oxides which have been investigated as alternative gate oxide for Metal- Oxide -Semiconductor field effect devices were grown by conventional furnace process using pure NH$_3$ and dry $O_2$ gas, and were characterized via a Fowler-Nordheim Tunneling electron injection technique. We studied Ig-Vg characteristics, leakage current, $\Delta$Vg under constant current stress from electrical characteristics point of view and TDDB from reliability point of view of MOS capacitors with SiO$_2$, NO, ONO dielectrics. Also, we studied the effect of stress temperature (25, 50, 75, 100, and 1$25^{\circ}C$). Overall, our results indicate that optimized re-oxidized nitrided oxide shows improved Ig-Vg characteristics, leakage current over the nitrided oxide and SiO$_2$. It has also been shown that re-oxidized nitrided oxide have better TDDB performance than SiO$_2$ while maintaining a similar temperature and electric field dependence. Especially, the Qbd is increased by about 1.5 times.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.415.1-415.1
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• 2014

Carrying out first-principles calculations, we study N-doped capped carbon nanotube (CNT) electrodes applied to DNA sequencing. While we obtain for the face-on nucleobase junction configurations a conventional conductance ordering where the largest signal results from guanine according to its high highest occupied molecular orbital (HOMO) level, we extract for the edge-on counterparts a distinct conductance ordering where the low-HOMO thymine provides the largest signal. The edge-on mode is shown to operate based on a novel molecular sensing mechanism that reflects the chemical connectivity between N-doped CNT caps that can act both as electron donors and electron acceptors and DNA functional groups that include the hyperconjugated thymine methyl group[1].

• Transactions on Electrical and Electronic Materials
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• 제2권2호
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• pp.16-20
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• 2001

Optoelectronic characteristics of the superlattice diode as a function of deposition temperature and annealing conditions have been studied. The multilayer nanocrystalline silicon/adsorbed oxygen (nc/Si/O) superlattice formed by molecular beam epitaxy (MBE) system. Experimental results showed that deposition temperature of 550$^{\circ}C$, followed by hydrogen annealing leads to best results, in terms of optical photoluminescence (PL) and electrical current-voltage (I-V) characteristics. Consequently, the experimental results of multilayer Si/O superlattic device showed the stable photoluminescence and good insulating behavior with high breakdown voltage. This is very useful promise for Si-based optoelectronic devices, and can be readily integrated with conventional silicon ULSI processing.

• 한국철도학회:학술대회논문집
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• 한국철도학회 2004년도 추계학술대회 논문집
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• pp.1162-1167
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• 2004

From the early 1980's, the New Austrian Tunnelling Method (NATM) has been developed as a one of the standard tunneling method in Korea. Owing to the results of many researches, the practical problems of shotcrete has been improved for a last decade. However, the excess amount of rebound still remains one of the critical problems in shotcrete technology. In order to improve for this rebound problem, recently developed cement mineral accelerator has been successfully applied to several NATM tunnels in Korea. An experimental investigation was carried out in order to verify the rebound characteristics of wet-mix Steel Fiber Reinforced Shotcrete (SFRS) with powder types cement mineral accelerator. Mortar setting test, SEM analysis, bonding test under spring water condition and rebound test were conducted. From the result, wet-mix SFRS with cement mineral acelerator exhibited excellent bonding characteristics even spring water condition and less rebound ratio compared to the conventional liquid accelerator.

• 한국터널지하공간학회 논문집
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• 제20권6호
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• pp.1073-1090
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• 2018

국내 공동구는 주로 신도시 개발사업에 포함되어 건설되었기 때문에 모두 개착 BOX 형태를 이루고 있으나 기존 시가지를 대상으로 독자적 공동구를 건설 중인 해외의 경우 터널식 공동구 형태를 주로 채택하고 있다. 공동구의 사회적 요구가 큰 중심가 도심지는 교통량이 많아 장기적으로 차로를 차단하거나 우회 차로 설치가 곤란한 것이 일반적이므로 터널식 공동구 설치가 합리적이라 하겠다. 이러한 터널식 공동구 활성화를 위해 공동구 최적 설계용량 및 수용시설(전력, 통신, 상수도 등)별 상호 영향인자(열간섭 및 전식, 유지관리 효율성 등)를 고려한 최적화된 단면설계 기술력을 확보할 필요가 있다. 터널식 공동구의 최적단면 설계기술이란 결국 공동구내 수용시설의 최적 배치기법을 도출하는 것이라 할 수 있다. 이러한 설계기법 도출을 위해 우선적으로 해외의 터널식 공동구(Shield TBM, Conventional Tunneling) 내공단면 적용 사례를 조사하여, 단면 내 수용시설의 배치현황, 부대시설 설치 등의 특징을 분석하고, 또한 국내 외의 공동구 설계기준 및 지침서에서 제시하고 있는 내공단면 설계(배치)와 관련한 기준사항들을 정리 분석할 필요가 있다.

• 한국지반공학회논문집
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• 제21권3호
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• pp.19-25
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• 2005

숏크리트와 록볼트를 지보재로 사용한다고 해서 NATM을 채택한 것은 아니므로 RMR과 Q-system에 의해 설계된 터널은 현대식 터널로 명명하였다. 강지보재로 지보되는 재래식 터널과 숏크리트와 록볼트로 지보되는 현대식 터널은 근본적으로 차이가 있는 것으로 알려져 있다. 현대식 터널은 암반의 하중지지력을 유지하기 위하여 숏크리트 지보를 사용하여 암반의 이완과 과도한 변형을 최소화시킨다고 하나 이에 대한 증명은 명확히 이루어지지 못하고 있다. 재래식 터널과 현대식 터널의 차이점을 살펴보기 위하여 사용되는 암반분류의 지보계 특성과 암반하중을 상호비교 하였다. 재래식 터널은 Terzaghi의 암반하중분류를 대표 암반분류로 채택하고, 현대식 터널은 RMR과 Q-system을 대표 암반분류로 채택하였다. 연구결과 현대식 터널의 주지보재인 숏크리트는 재래식 터널의 주지보재인 강지보 보다 지지력이 우수하였으며 암반분류에서 제시하는 암반하중은 재래식 터널과 현대식 터널의 차이는 없는 것으로 확인되었다. 따라서, 암반분류법에 의하면 숏크리트를 사용하는 현대식 터널의 암반의 하중지지력이 재래식 터널 암반의 하중지지력 보다 크다고 볼 수는 없다.

• Journal of Magnetics
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• 제9권1호
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• pp.9-12
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• 2004

We have investigated sintering effects on Fe/Mo ordering and magnetoresistance (MR) in double perovskite-reflection lines due to $Sr_2FeMoO_6$ (SFMO). Polycrystalline samples have been prepared by the conventional solid-state reaction by sintering in a stream of 5% $H_2/Ar$ gas. All samples are single phase and exhibit a series of superstructurecation ordering at Fe and Mo sites. As sintering temperature increases from 900 to $1300^{\circ}C$, the degree of Fe/Mo ordering increases from 82 to 92%, magnetization (15 K, 7 kOe) increases from 1.6 to 2.7 ${\mu}_B/f.u.,$ and Curie temperature increases at a rate of 4.3 K/% with the increase of Fe/Mo ordering ratio. The magnitude of MR measured at 5 K is 19% for sample prepared at $1000^{\circ}C$ with magnetic fields of 7 kOe. The observed MR is proportional to the square of magnetization indicating that the MR feature in SFMO is explained by the spin-polarized tunneling at grain boundaries.

• Geomechanics and Engineering
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• 제22권6호
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• pp.497-507
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• 2020

This paper presents the results of a three-dimensional numerical investigation into the effect of new tunnel construction on structural performance of existing tunnel lining. A three-dimensional finite difference model, capable of modelling the tunnel construction process, was adopted to perform a parametric study on the spatial variation of new tunnel location with respect to the existing tunnel with emphasis on the plan crossing angle of the new tunnel with respect to the existing tunnel and the vertical elevation of the new tunnel with respect to the existing one. The results of the analyses were arranged so that the effect of new tunnel construction on the lining member forces and stresses of the existing tunnel can be identified. The results indicate that when a new tunnel underpasses an existing tunnel, the new tunnel construction imposes greater impact on the existing tunnel lining when the two tunnels cross at an acute angle. Also shown are that the critical plan crossing angle of the new tunnel that would impose greater impact on the existing tunnel depends on the relative vertical location of the new tunnel with respect to the existing one, and that the overpassing new tunnel construction scenario is more critical than the underpassing scenario in view of the existing tunnel lining stability. Practical implications of the findings are discussed.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.212-214
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• 2005

The charge-pump circuit which is used to generate higher voltage than the available supply voltage has wide applications such as the flash memory of EEPROM Because the demand for high voltage comes from physical mechanism such as the oxide tunneling, the required pumped voltage cannot be scaled as the power supply voltage is scaled. Therefore, an efficient charge-pump circuit that can achieve high voltage from the available low supply voltage is essential. A new Analog Switch p-well CMOS charge pump circuit without the MOS device body effect is processed. By improve the structure of the circuit's transistors to reduce the threshold voltage shift of the devices, the threshold voltage of the device is kept constant. So, the circuit electrical characteristics are higher output voltage within a shorter time than the conventional charge pump. The propose analog switch CMOS charge pump shows compatible performance of the ideal diode or Dickson charge pump.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.262-263
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• 2008

The Metal-Insulator-Silicon (MIS) capacitors with $SiO_2$ and high-k dielectric were investigated. The high-k dielectrics were obtained by atomic layer deposit (ALD) system. The electrical characteristics were investigated by measuring the current-voltage (I-V) characteristics. The conduction mechanisms were analyzed by using the Fowler-Nordheim (FN) plot and Direct Tunneling (DT) plot. As a result, the MIS capacitors with high-k dielectrics have lower leakage current densities than conventional tunnel-barrier with $SiO_2$ dielectrics.