• 제목/요약/키워드: contact resistance reduction

검색결과 88건 처리시간 0.03초

결정질 실리콘 태양전지의 고효율 화를 위한 Selective emitter 구조 및 Ni/Cu plating 전극 구조 적용에 관한 연구 (PA study on selective emitter structure and Ni/Cu plating metallization for high efficiency crystalline silicon solar cells)

  • 김민정;이재두;이수홍
    • 한국신재생에너지학회:학술대회논문집
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    • 한국신재생에너지학회 2010년도 춘계학술대회 초록집
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    • pp.91.2-91.2
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    • 2010
  • The use of plated front contact for metallization of silicon solar cell may alternative technologies as a screen printed and silver paste contact. This technologies should allow the formation of contact with low contact resistivity a high line conductivity and also reduction of shading losses. The better performance of Ni/Cu contacts is attributed to the reduced series resistance due to better contact conductivity of Ni with Si and subsequent electroplating of Cu on Ni. The ability to pattern narrower grid lines for reduced light shading combined with the lower resistance of a metal silicide contact and improved conductivity of plated deposit. This improves the FF as the series resistance is deduced. This is very much required in the case of low concentrator solar cells in which the series resistance is one of the important and dominant parameter that affect the cell performance. A selective emitter structure with highly dopes regions underneath the metal contacts, is widely known to be one of the most promising high-efficiency solution in solar cell processing. This paper using selective emitter structure technique, fabricated Ni/Cu plating metallization cell with a cell efficiency of 17.19%.

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Electrical properties of polyethylene composite films filled with nickel powder and short carbon fiber hybrid filler

  • Mironov, V.S.;Kim, Seong Yun;Park, Min
    • Carbon letters
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    • 제14권2호
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    • pp.105-109
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    • 2013
  • Effects of the amount of nickel powder (Ni) in Ni-carbon fiber (CF) hybrid filler systems on the conductivity(or resistivity) and thermal coefficient of resistance (TCR) of filled high density polyethylene were studied. Increases of the resistivity and TCR with increasing Ni concentration at a given hybrid filler content were observed. Using the fiber contact model, we showed that the main role of Ni in the hybrid filler system is to decrease the interfiber contact resistance when Ni concentration is less than the threshold point. The formation of structural defects leading to reduced reinforcing effect resulted in both a reduction of strength and an increase of the coefficient of thermal expansion in the composite film; these changes are responsible for the increases of both resistivity and TCR with increasing Ni concentration in the hybrid filler system.

하이드라진으로 환원시킨 그래핀을 코팅한 오스테나이트와 마르텐사이트 스테인리스 강 고체고분자형 연료전지 금속 분리판의 전기화학적 특성 평가 (Evaluation of Electrochemical Characteristics on Graphene Coated Austenitic and Martensitic Stainless Steels for Metallic Bipolar Plates in PEMFC Fabricated with Hydrazine Reduction Methods)

  • 차성윤;이재봉
    • Corrosion Science and Technology
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    • 제15권2호
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    • pp.92-107
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    • 2016
  • Graphene was coated on austenitic and martensitic stainless steels to simulate the metallic bipolar plate of proton exchange membrane fuel cell (PEMFC). Graphene oxide (GO) was synthesized and was reduced to reduced graphene oxide (rGO) via a hydrazine process. rGO was confirmed by FE-SEM, Raman spectroscopy and XPS. Interfacial contact resistance (ICR) between the bipolar plate and the gas diffusion layer (GDL) was measured to confirm the electrical conductivity. Both ICR and corrosion current density decreased on graphene coated stainless steels. Corrosion resistance was also improved with immersion time in cathodic environments and satisfied the criteria of the Department of Energy (DOE), USA. The total concentrations of metal ions dissolved from graphene coated stainless steels were reduced. Furthermore hydrophobicity was improved by increasing the contact angle.

탄화규소 반도체의 구리 오옴성 접촉 (Copper Ohmic Contact on n-type SiC Semiconductor)

  • 조남인;정경화
    • 마이크로전자및패키징학회지
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    • 제10권4호
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    • pp.29-33
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    • 2003
  • n-형 탄화규소 반도체에 대한 구리금속을 이용하여 오옴성 접촉 구조를 제작하였다. 제작된 구리접촉에 대해 후속열처리 조건과 금속접촉 구조에 따른 재료적, 전기적 성질의 변화를 조사하였다. 금속접촉의 오옴성 성질은 금속박막의 구조 뿐 아니라 열처리조건에 대해서도 크게 좌우됨을 알 수 있었다. 열처리는 급속열처리 장치를 이용한 진공상태 및 환원 분위기에서 2단계 열처리방식을 통하여 시행하였다. 접촉비저항의 측정을 위해 TLM 구조를 만들었으며 면저항 ($R_{s}$), 접합저항 ($R_{c}$), 이동거리 ($L_{T}$), 패드간거리 (d), 전체저항 ($R_{T}$) 값을 구하여 알려진 계산식에 의해 접촉비저항 ($p_{c}$) 값을 추정하였다. 진공보다 환원분위기에서 후속 열처리를 수행한 시편이 양호한 전기적 성질을 가짐을 알 수 있었다. 가장 양호한 결과는 Cu/Si/Cu 구조를 가진 금속접촉 결과이었으며 접촉비저항 ($p_{c}$)은 $1.2\times 10^{-6} \Omega \textrm{cm}^2$의 낮은 값을 얻을 수 있었다. 재료적 성질은 XRD를 이용하여 분석하였고 SiC 계면 상에 구리와 실리콘이 결합한 구리 실리사이드가 형성됨을 알 수 있었다.

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A comparison study on the deck house shape of high speed planing crafts for air resistance reduction

  • Park, Chung-Hwan;Park, Hee-Seung;Jang, Ho-Yun;Im, Namkyun
    • International Journal of Naval Architecture and Ocean Engineering
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    • 제6권4호
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    • pp.867-875
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    • 2014
  • Planing crafts were specifically designed to achieve relatively high speeds on the water. When a planing craft is running at high speed, dynamic pressure on the bottom makes the boat rise on the surface of the water. This reduces the area of the sinking surface of the boat to increase air resistance. Air resistance means the resistance that occurs when the hull and deck house over the surface of the water come in contact with the air current. In this paper, we carried out a CFD numerical analysis to find optimal deck houses that decreased air-resistance on the water when planing crafts are running at high speed. We finally developed the deck house shape of high-speed planing crafts that optimally decreased air resistance.

고농도의 Mg가 도핑된 GaN층을 이용한 GaN계 청자색 레이저다이오드의 동작 전압 감소 (Reduction of Operating Voltage of GaN-based Blue-violet Laser Diode by using Highly Mg Doped GaN Layer)

  • 곽준섭
    • 한국전기전자재료학회논문지
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    • 제17권7호
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    • pp.764-769
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    • 2004
  • In order to reduce operating voltage of the GaN based blue-violet laser diodes, the effect of highly Mg doped GaN layer, which was grown below ohmic contact metals, on contact resistivity as well as operating voltage has been investigated. The addition of the highly Mg doped GaN layer greatly reduced contact resistivity of Pd/Pt/Au ohmic contacts from $5.2 \times {10}^-2 \Omegaㆍ$\textrm{cm}^2$ to 7.5 \times {10}^-4 \Omegaㆍ$\textrm{cm}^2$$. In addition, it also decreased device voltage at 20 mA by more than 3 V. Temperature- dependent sheet resistivity of the highly Mg doped GaN layer suggested that the reduction of the contact resistivity could be attributed to predominant current flow at the interface between the Pd/Pt/Au contacts and p-GaN through a deep level defect band, rather than the valence band.

에피텍셜 베이스 실리콘 태양전지에서 Buried Contact 효과 (Effect of Buried Contact on the Epitaxial Base Silicon Solar Cell)

  • 장지근;임용규;정진철
    • 한국재료학회지
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    • 제13권5호
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    • pp.313-316
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    • 2003
  • The new epitaxial base cell as a high efficiency Si solar cell was fabricated and the effect of buried contact on the cell characteristics was investigated. In our experiments, the cell with buried contact showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 10% under the incident light of AM-1 100 ㎽/$\textrm{cm}^2$. The insertion of buried contact in the epitaxial base structure brought the fabricated cell to the efficiency improvement of about 33%. The cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $p^{-}$ $p^{+}$ epitaxial base, and the reduction of emitter series resistance by n+ buried contact.

유도 결합 플라즈마-스퍼터 승화법을 이용한 고분자 전해질 연료전지 분리판용 CrN 박막의 내식성연구 (Anti-corrosion Properties of CrN Thin Films Deposited by Inductively Coupled Plasma Assisted Sputter Sublimation for PEMFC Bipolar Plates)

  • 유영군;주정훈
    • 한국표면공학회지
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    • 제46권4호
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    • pp.168-174
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    • 2013
  • In this study, low-cost, high-speed deposition, excellent processability, high mechanical strength and electrical conductivity, chemical stability and corrosion resistance of stainless steel to meet the obsessive-compulsive (0.1 mm or less) were selected CrN thin film. new price reduction to sputter deposition causes - the possibility of sublimation source for inductively coupled plasma Cr rods were attempts by DC bias. 0.6 Pa Ar inductively coupled plasmas of 2.4 MHz, 500 W, keeping Cr Rod DC bias power 30 W (900 V, 0.02 A) is applied, $N_2$ flow rate of 0.5, 1.0, 1.5 sccm by varying the characteristics of were analyzed. $N_2$ flow rate increases, decreases and $Cr_2N$, CrN was found to increase. In addition to corrosion resistance and contact resistance, corrosion resistance, electrical conductivity was evaluated. corrosion current density than $N_2$ 0 sccm was sure to rise in all, $N_2$ 1 sccm at $4.390{\times}10^{-7}$ (at 0.6 V) $A{\cdot}cm^{-2}$, respectively. electrical conductivity process results when $N_2$ 1 sccm 28.8 $m{\Omega}/cm^2$ with the lowest value of the contact resistance was confirmed that came out. The OES (SQ-2000) and QMS (CPM-300) using a reactive deposition process to add $N_2$ to maintain a uniform deposition rate was confirmed that.

초미립 복합분말로 제조된 W-Cu재료의 전기접점 특성 (Electrical Contact Property of W-Cu Materials Manufactured from Nanocomposite Powder)

  • 김태형
    • 한국분말재료학회지
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    • 제1권2호
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    • pp.174-180
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    • 1994
  • Electrical contact property of the W-20wt%Cu contact materials manufactured by liquid phase sintering of nanocomposite W-Cu powders was investigated and discussed in terms of microstructural development during performance test. Nanocomposite powders were prepared by hydrogen reduction of ball milled W-Cu oxide mixture. They underwent complete densification and microstructural homogenization during liquid phase sintering. As a consequence, the W-Cu contacts produced from nanocomposite powders showed superior contact property of lower arc erosion and stable contact resistance. This might be mostly due to the fact that the arc erosion by evaporation of Cu liquid droplets and surface cracking remarkably became weakened. It is concluded that the improvement of anti-arc erosion of the composite specimen is basically attributed to microstructural homogeneity.

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막결합형 생물반응기(Membrane Bio-Reactor)의 막 오염 저감을 위한 고전압 펄스의 적용과 막 오염 저감 속도론적 해석 (Application of high voltage pulse for reduction of membrane fouling in membrane bio-reactor and kinetic approach to fouling rate reduction)

  • 김경래;김완규;장인성
    • 상하수도학회지
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    • 제34권3호
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    • pp.183-190
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    • 2020
  • Although membrane bio-reactor (MBR) has been widely applied for wastewater treatment plants, the membrane fouling problems are still considered as an obstacle to overcome. Thus, many studies and commercial developments on mitigating membrane fouling in MBR have been carried out. Recently, high voltage impulse (HVI) has gained attention for a possible alternative technique for desalting, non-thermal sterilization, bromate-free disinfection and mitigation of membrane fouling. In this study, it was verified if the HVI could be used for mitigation of membrane fouling, particularly the internal pore fouling in MBR. The HVI was applied to the fouled membrane under different conditions of electric fields (E) and contact time (t) of HVI in order to investigate how much of internal pore fouling was reduced. The internal pore fouling resistance (Rf) after HVI induction was reduced as both E and t increased. For example, Rf decreased by 19% when the applied E was 5 kV/cm and t was 80 min. However, the Rf decreased by 71% as the E increased to 15 kV/cm under the same contact time. The correlation between E and t that needed for 20% of Rf reduction was modeled based on kinetics. The model equation, E1.54t = 1.2 × 103 was obtained by the membrane filtration data that were obtained with and without HVI induction. The equation states the products of En and t is always constant, which means that the required contact time can be reduced in accordance with the increase of E.