• The Korean Journal of Ceramics
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• v.1 no.1
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• pp.21-28
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• 1995

Electrical conductivity of $TiO_2$ thin films, deposited on $Al_2O_3$ substrates by metal organic chemical vapor deposition (MOCVD), was measured by four-point probe method in a temperature range from $800^{\circ}C$ to $1025^{\circ}C$ and an oxygen partial pressure range from $2.7{\times}10^{-5}$ atm to 1 atm. In the low oxygen partial pressure region n-type conduction was dominant, but in the high oxygen partial pressure region p-type conduction behavior appeared due to substitution of Ti ions by Al ions, which were diffused from the substrate during post deposition annealing process. Electrical conductivity of the film decreases in the n-type region and increases in the p-type region as the oxygen partial pressure increases. The transition points, which show the minimum conductivity, shifted to the higher oxygen partial pressure region as the measuring temperature increased, but it shifted to lower oxygen partial pressure region with an increase in the post annealing temperature. The results were also discussed with the possible defect models.

• Proceedings of the Korean Vacuum Society Conference
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• 2003.02a
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• pp.157-157
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• 2003

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1993.10a
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• pp.71-75
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• 1993

The Modeling analysis and design of a high frequency LC-type series and LLCC-type parallel resonant converter oprating in the continous conduction is presented. The state-plane diagram representation of the converter response gives and good insight into the converter operation. A set of characterisric frequency are plotted which design parameters can be obtained.

• Journal of the Korean Institute of Telematics and Electronics
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• v.15 no.6
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• pp.39-42
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• 1978

Orthorhombic yellow PbO thin films were prepared by evaporating PbO powder in vacuum and annealed in air. The evaporation was carried out by Hashing method. The energy gap, the type of electric conduction and the grain size of these films were 2.63eV, f type, and 670 nm respectively.

• Journal of Biomedical Engineering Research
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• v.14 no.3
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• pp.251-256
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• 1993

The conduction velocity of the nerve is of importance to the diagnosis of various negromuscular disorders. A major technical problem encountered in nerve stimulation technique is the control of stimulus artifact and the convenience of nerve stimulator. The remained artifacts must be removed by processing the contaminated signal. This paper discusses about the artifact cancellation algorithms in constant voltage type nerve stimulator(CVS) and constant current type nerve stimulator(CCS).

• Journal of Power Electronics
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• v.19 no.3
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• pp.702-713
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• 2019

Multilevel Inverters (MLIs) are widely used in medium voltage applications due to their various advantages. In addition, there are numerous types of MLIs for such applications. However, the diode-less 3-level (3L) T-type Neutral Point Clamped (NPC) MLI is the most advantageous due to its low conduction losses and high potential efficiency. The power circuit of a 3L T-type NPC is derived by the conventional two level inverter by a slight modification. In order to explore the MLI performance for various Pulse Width Modulation (PWM) schemes, this paper examines the operation of a 3L (five level line to line) T-type NPC MLI for various types of Multi-Carriers Pulse Width Modulation (MCPWM) schemes. These PWM schemes are compared in terms of their voltage profile, total harmonic distortion (THD) and conduction losses. In addition, a 3L T-type NPC MLI is also compared with the conventional NPC in terms of number of switches, clamping diodes, main diodes and capacitors. Moreover, the capacitor-balancing problem is also investigated using the Neutral Point Fluctuation (NPF) method with all of the MCPWM schemes. A 1kW 3L T-type NPC MLI is simulated in MATLAB/Simulink and implemented experimentally and its performance is tested with a 1HP induction motor. The results indicate that the 3L T-type NPC MLI has better performance than conventional NPC MLIs.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.1
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• pp.13-18
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• 2000

We have fabricated LB ultra-thin films of maleate system by LB technique and evaluated the deposited status of LB ultra-thin films by I-V characteristics such as capacitance. It was found that the thickness of LB ultra-thin per layer is $27~30[{\AA}]$ by XRD. And, we have known that the conductivity along the horizontal direction of LB ultra-thin films was about $10^{-8}[S/cm]$, it corresponds to the semiconducting materials. Also, the I-V characteristics along the vertical direction of LB ultra-thin films was dominated by Schottky type current, the activation energy obtained by current-temperature characteristics was about 0.84[eV] and the conductivity was about $10^{-14}[S/cm]$, it corresponds to the insulator. And, the anisotropic conduction mechanism of the LB ultra-thin films in vertical direction and horizontal direction is determined by the hydrophilic group and the hydrophobic group in LB ultra-thin films. The above results are applicable to the semiconductor devices such as switching device, which function at the molecular level.

• Electrical & Electronic Materials
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• v.11 no.10
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• pp.60-65
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• 1998

Deposition conditions, surface morphology, and electrical properties of polyamic acid alkylamine salts (PAAS) Langmuir-Blodgett(LB) films have been investigated through a study of surface pressure-area $\pi$-A isotherms, AFM (atomic force microscopy), and current-voltage characteristics. To obtain the optimum conditions of film deposition, the $\pi$-A isotherms were examined by varying temperature, barrier moving speed, dipping speed, spreading amount of solution etc. The Z-type LB films were made at the surface pressure of 5 mN m-1 and 25 mN m-1 for the AFM study; the former surface pressure forms the gas phase and the latter one forms the solid phase. The LB film made in the gas phase show domains with a size of about 200 A diameter and 70 A height. However, the LB films made in the solid phase show a very smooth surface with 2 A surface roughness. In the current-voltage characteristics measured along the perpendicular direction of the films, ohmic conduction has been observed below 105 V cm-1 and the calculated electrical conductivity is about 10-13 S cm-1. Nonohmic conduction has been observed above = 10-11 V cm and the conduction mechanism can be explained by the Schottky effect.

• Journal of computational fluids engineering
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• v.18 no.1
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• pp.77-82
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• 2013

The error in measuring temperature profiles by thermocouple inside boundary layer mostly comes from the conduction heat transfer of the thermocouple. The error is not negligible when the conductivity of the thermocouple is very high. In this study, the effect of conduction heat transfer of the thermocouple on the temperature profile inside boundary layer was examined by considering both free-stream velocity and a thermocouple position. The conduction error of an E-type thermocouple was investigated by numerical analysis of three-dimensional conjugate heat transfer for various velocity profiles of boundary layer and thermocouple positions.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.757-761
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• 2001

We studied emitting properties of organic electroluminescent devices fabricated using the spin-coating and Langmuir-Blodgett(LB) technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. LB monolayer of poly(3-hexylthiophene)(P3HT) was deposited 27 layers onto the indium-tin-oxide(ITO) substrate as Y-type films by the vertical dipping method. In the absorption spectra, the λ$\_$max/ of P3HT-AA LB films and of spin-coating films showed about at 510, 545 and 590 nm corresponding to 2.43, 2.28, 2.10eV. And we observed that the turn-on voltage of devices deposited by LB method(10V) was higher than that of spin-coating method(8.5V) in voltage-current-luminance characteristic. In the logV-logJ characteristics of ITO/P3HT-AA LB/Al device, we confirmed that El device fabricated by LB method follows three conduction mechanisms: ohmic, space-charge-limited current(SCLC) conduction and trapped-carrier-limited space-charge current(TCLC) conduction.