• Journal of the Institute of Electronics Engineers of Korea SD
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• v.48 no.2
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• pp.14-19
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• 2011

We have fabricated GaN Schottky barrier diode (SBD) for high-voltage applications on Si substrate. The leakage current and the electrical characteristics of GaN SBD are investigated by annealing metal-semiconductor junctions. Ohmic junctions of Ti/Al/Mo/Au and Schottky junctions of Ni/Au are used in the fabrication. A test structure is proposed to measured buffer leakage current through a mesa structure. When annealing temperature is increased from $700^{\circ}C$ to $800^{\circ}C$, measured buffer leakage current is also increased from 87 nA to 780 nA at the width of 100 ${\mu}m$. The diffusion of Au, Ti, Mo, O into GaN buffer layer increases the leakage current and that is verified by Auger electron spectroscopy. Experimental results show that the low leakage current and the high breakdown voltage of GaN SBD are achieved by annealing metal-semiconductor junctions.

• Journal of the Semiconductor & Display Technology
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• v.14 no.1
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• pp.67-71
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• 2015

Pulse electroplating was studied to form nanocrystal structure effectively by changing plating current density and duty cycle. When both of plating current density and duty cycle were decreased from $100mA/cm^2$ and 70% to $50mA/cm^2$ and 30%, the P content in the Ni matrix was increased almost up to the composition of $Ni_3P$ compound and the grain growth after annealing was retarded as well. The as-plated hardness values ranging from 660 to 753 HV are mainly based on the formation of nanocrystal structure. On the other hand, the post-anneal hardness values ranging from 898 to 1045 HV, which are comparable to the hardness of hard Cr, are coming from how competition worked between the precipitation of $Ni_3P$ and the grain coarsening. According to the ANOVA and regression analysis, the plating current density showed more strong effect on nanocrystal size and film hardness than the duty cycle.

• Proceedings of the Korea Inteligent Information System Society Conference
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• 2001.01a
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• pp.224-229
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• 2001

When a semiconductor package is assembled, various materials such as die attach adhesive, lead frame, EMC (Epoxy Molding Compound), and gold wire are used. For better preconditioning performance, the combination between the packaging materials by studying the compatibility of their properties as well as superior packaging material selection is important. But it is not an easy task to find proper packaging material sets, since a variety of factors like package design, substrate design, substrate size, substrate treatment, die size, die thickness, die passivation, and customer requirements should be considered. This research applies case-based reasoning(CBR) technique to solve this problem, utilizing prior cases that have been experienced. Our particular interests lie in building decision support model to aid the selection of proper die attach adhesive. The preliminary results show that this approach is promising.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.24 no.10
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• pp.784-789
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• 2011

A linear spring model, where the interactions among atoms are assumed to be isotropic and elastic, is employed for the study of non-polar optical phonon scattering in the valence band of alloy semiconductors. The force equations of n atoms are used in the spring model for the consideration of the random distribution of constituent atoms in an alloy semiconductor. When the number of atoms in a unit cell is assumed to be two based on the experimental result, the optical deformation potent is valid for compound semiconductors as well as alloy semiconductors.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.12-15
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• 2018

InSb (III-V compound semiconductor) is used for photodiode to detect the mid-wavelength infrared radiation. Generally the quantum efficiency of InSb IR FPAs(Focal Plane Arrays) is known to be determined by thickness of InSb and transmittance of anti-reflection coating layer. In this study, we confirmed that the C-V characteristics of detector array affects the quantum efficiency of the InSb IR FPAs. We fabricated the IR FPAs with various $V_{fb}$(flat band voltage) values and confirmed the tendency between the $V_{fb}$ value and quantum efficiency of the IR FPAs.

• Journal of Biomedical Engineering Research
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• v.29 no.1
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• pp.82-87
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• 2008

In this paper, the study was carried out to design and implement the medical compound stimulator based on the preexisting individual medical stimulators with Low frequency, High frequency and cooling stimulation. The proposed equipment is designed to compound all the functions including a cooling stimulation with a range of $0{\sim}20^{\circ}C$ and the verified low and high frequencies of 250Hz, 500Hz, 1KHz and 1MHz respectively from the previous clinical experiment with a consideration of its credibility and efficiency. Also, it was constructed by using a new technique, thermoelectricity semiconductor with a consideration of miniaturization and stability. In accordance with patients' treatment purpose, the hand piece of low frequency/cooling stimulation and High frequency/cooling stimulation were separately designed for convenience. The frequency, accuracy and other factors of implemented medical compound stimulator was satisfied according to its measurement. It was also tested by Korean Testing Laboratory (KTL) for its stability and efficacy and it confirmed that the medical compound stimulator is suitable for use as it fits in with the medical equipment standards.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.05a
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• pp.1-5
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• 2001

• Journal of the Korean Society for Precision Engineering
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• v.25 no.10
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• pp.7-22
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• 2008

• Proceedings of the Optical Society of Korea Conference
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• 2005.07a
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• pp.48-49
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• 2005

• Proceedings of the Korean Nuclear Society Conference
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• 2005.10a
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• pp.739-740
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• 2005