• Title/Summary/Keyword: complex refractive index

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Optimization of Crystallization Condition for Transparent LAS Glass-ceramic Via Differential Thermal Analysis (DTA를 통한 LAS계 투명 결정화 유리의 결정화 조건 최적화)

  • Moon, Yun-Gon;Lim, Tae-Young;Lee, Mijai;Kim, Jin-Ho;Jeon, Dae-Woo;Hwang, Jonghee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.2
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    • pp.101-105
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    • 2016
  • The basic characteristics of glass are highly fragile and brittle consequences the ultimate purpose of glass manufacturing is to make a transparent glass with complex shape. In order to solve this problem, mechanical properties of glass can be increased by crystallization of its amorphous glass. However, glass-ceramics has become opaque through crystallization process due to the distracted interface of glass by precipitated particles. This study has been investigated thermal processing conditions of LAS transparent glass-ceramic by using DTA (differential thermal analysis), in order to control size of precipitated particle and then fabricate transparent glass-ceramic. DTA indicated that crystallization peak area was declined with increased nucleation temperature. Subsequently, we have been established optimum temperature for crystallization depending on the nucleation temperature. The transmission and thermal expansion were measured after crystallization, and the size of precipitated particle was identified in range of 20~100 nm by FE-SEM. In addition, by setting the optimized crystallization condition, with high transmission and low thermal expansion glass was synthesized through this experiment.

Optical Properties of Ag@Fe3O4 Core-Shell Nanoparticles (Ag@Fe3O4 코어-쉘 나노입자의 광학적 특성)

  • Song, Younseong;Koh, Kwangnak;Kim, Kyujung;Lee, Jaebeom
    • Korean Journal of Optics and Photonics
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    • v.28 no.3
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    • pp.97-102
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    • 2017
  • In this paper, we investigate the optical properties of $Ag@Fe_3O_4$ nanoparticles (NPs) composed of a plasmonic core and a magnetic shell. As the $Fe_3O_4$ shell with high refractive index (~2.42) is formed on the surface of the silver NPs having diameter of 60 nm, the wavelength of the localized surface-plasmon resonance (LSPR) is shifted from 420 nm to 650 nm, a so-called "redshift". Furthermore, through the use of three simulation models ($Ag@Fe_3O_4$ NP, $Fe_3O_4$ shell NP, and silver NP), the peak at 410 nm is seen to be the result of scattering by the $Fe_3O_4$ shell with 60 nm thickness, which would be useful in comprehending the complex optics in various nanoscale assemblies using similar NPs.

Detection of Fine Delamination in Glass Fiber Reinforced Polymer Analyzing Full Width Half Maximum of Superimposed Terahertz Signal (테라헤르츠 중첩 신호의 FWHM 분석을 통한 유리섬유 복합재료 내부 미세 박리 검출 기술)

  • Kim, Heon-Su;Park, Dong-Woon;Kim, Sang-Il;Kim, Hak-Sung
    • Composites Research
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    • v.34 no.3
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    • pp.143-147
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    • 2021
  • Full width half maximum (FWHM) analysis of superimposed terahertz (THz) signals in the glass fiber reinforced polymer (GFRP) was studied to detect fine delamination inside GFRP. The THz signals were measured for each fine delamination size inside the GFRP using the reflection mode of the terahertz time domain spectroscopy (THz-TDS) system. Then, the FWHM of the superimposed THz signal reflected at the fine delamination was extracted. Thereafter, the complex refractive index of the GFRP was measured using transmission mode of the THzTDS system. Based on this, the FWHM of the superimposed THz signal at the fine delamination were calculated and compared with respect to the fine delamination size. From the theoretically calculated superimposed signals, the relationship between the fine delamination size and the FWHM in the superimposed THz signal was derived. Consequently, the fine delamination size could be predicted through the analysis of the FWHM extracted from the THz signal at the fine delamination.

Growth and Optical Properties of SnSe/BaF2 Single-Crystal Epilayers (SnSe/BaF2 단결정 박막의 성장과 광학적 특성)

  • Lee, II Hoon;Doo, Ha Young
    • Journal of Korean Ophthalmic Optics Society
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    • v.7 no.2
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    • pp.209-215
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    • 2002
  • This study investigated the crystal growth, crystalline structure and the basic optical properties of $SnSe/BaF_2$ epilayers. The SnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy(HWE) technique. It was found from the analysis of X-ray diffraction patterns that $SnSe/BaF_2$ epilayer was growing to single crystal with orthorhombic structure oriented [111] along the growth direction. Using Rutherford back scattering(RBS), the atomic ratios of the SnSe was found to be stoichiometric, almost 50 : 50. The best values for the full width at half maximum (FWHM) of the DCXRD was 163 arcsec for SnSe epilarer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $SnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}$(E) of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points in the optical spectra. The real and imaginary parts(${\varepsilon}_1$ and ${\varepsilon}_2$) of the dielectric function ${\varepsilon}$ of SnSe were measured. These data are analyzed using a theoretical model known as the model dielectric function(MDF). The optical constants related to dielectric function such as the complex refractive index(n*-n+ik), absorption coefficient (${\alpha}$) and normal- incidence reflectivity (R) are also presented for $SnSe/BaF_2$.

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Growth and Optical Properties of PbSnSe Epilayers Grown on BaF2(111) (PbSnSe 단결정 박막의 성장과 광학적 특성)

  • Lee, Il-Hoon
    • Journal of Korean Ophthalmic Optics Society
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    • v.9 no.1
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    • pp.35-41
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    • 2004
  • This study investigated the crystal growth, crystalline structure and the basic optical properties of $PbSnSe/BaF_2$ epilayers. The PbSnSe epilayer was grown on $BaF_2$(111) insulating substrates using a hot wall epitaxy (HWE) technique. It was found from the analysis of X-ray diffraction patterns that $PbSnSe/BaF_2$ epilayer was grown single crystal with a rock-salt structure oriented along [111] the growth direction. Using Rutherford back scattering, the atomic ratios of the PbSnSe was found to be proper stoichiometric. The best values for the full width at half maximum (FWHM) of the DCXRD was 162 arcsec for PbSnSe epilayer. The epilayer-thickness dependence of the FWHM of the DCXRD shows that the quality of the $PbSnSe/BaF_2$ is as expected. The dielectric function ${\varepsilon}(E)$ of a semiconductor is closely related to its electronic energy band structure and such relation can be drawn from features around the critical points(CPs) in the optical spectra. The real and imaginary parts(${\varepsilon}1$ and ${\varepsilon}2$) of the dielectric function ${\varepsilon}$ of PbSe were measured, and the observed spectra reveal distinct structures at energies of the E1, E2 and E3 CPs. These data are analyzed using a theoretical model known as the model dielectric function (MDF). The optical constants related to dielectric function such as the complex refractive index ($n^*=n+ik$), absorption coefficient (${\alpha}$) and normal-incidence reflectivity (R) are also presented for $PbSnSe/BaF_2$.

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Design and deposition of two-layer antireflection and antistatic coatings using a TiN thin film (TiN 박막을 이용한 2층 무반사 코팅의 설계 및 층착)

  • 황보창권
    • Korean Journal of Optics and Photonics
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    • v.11 no.5
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    • pp.323-329
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    • 2000
  • In this study we have calculated an ideal complex refractive index of a TiN trim used in a layer of anl1reilecnon (I\R) coatmg, [air$ISiO_2ITiNIglass$] in the visible. Also we simulated the rellectance of lwo-layer AR coating by varying the thicknesses of TiN and $SiO_2$ layers, respecl1vely. The simolation results show that we can controllhe lowest reflectance and AR band of tile AR coating. The TIN fihns were fabricated by a RF magnetron sputtering apparalus. The chemical, structural and electrical properties of TiN fih11S were inveshgated by the Rutherford backscattering spech'oscopy (RBS), atomic force microscope (AFM) and 4-point probe. The optical properlies were inve,tigated by the spectrophotometer and vanable angle spectroscopic ellipsometer (VASE). The smface roughness of TiN flhns \vas $9~10\AA$. TIle resistivity of TiN films was TEX>$360~730\mu$\Omega $ cm. The ,toichlOllletry of TiN film was 1'1: O:N = I: 0.65 :0.95 and ilic oxygen wa~ found on ilie smface. With these experimental and simu]al1on resulLs, we deposited duo: two-layer AR coating, [air$ISiO_2ITiNIglass$] and the refleClance was under 0.5% ill the regIOn of 440-650 run. 0 run.

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