• Journal of the Korean Vacuum Society
• /
• v.9 no.3
• /
• pp.267-272
• /
• 2000

Electroplating Cu was deposited on Si(100) wafer after seed Cu was deposited by sputtering first. TaN was deposited as a diffusion barrier before depositing the seed Cu. Electroplating Cu thin films show highly (111)-oriented microstructure for both before and after annealing at $450^{\circ}C$ for 30min and no copper silicide was detected in the same samples, which indicates that TaN barrier layer blocks well the Cu diffusion into silicon substrate. After annealing the electroplating Cu film up to $450^{\circ}C$, the Cu film became columnar from non-columnar, its grain size became larger about two times, and also defects density of stacking faults, twins and dislocations decreased greatly. Thus the heat treatment will improve significantly electromigration property caused by the grain boundary in the Cu thin films.

• Proceedings of the Polymer Society of Korea Conference
• /
• 2006.10a
• /
• pp.297-297
• /
• 2006

Recently columnar liquid crystals have been studied due to their possible application to organic conducting materials. Supramolecular columnar liquid crystals consist of mesogenic unit which can aggregate into discs that will make up the columns which associate to form a two-dimensional network. In this study, we prepared supramolecular columnar liquid crystals containing hydrogen bonding between carboxylic acid and, pyridine moieties. Thermal and structural properties of prepared complexe were investigated, and it exhibited hexagonal columnar structure ($Col_{h}$) at room temperature.

• Journal of Korea Foundry Society
• /
• v.42 no.3
• /
• pp.153-160
• /
• 2022

The effect of thickness on the microstructure and the mechanical properties of centrifugal cast 625 was investigated. Centrifugal cast 625 with various thickness of 10, 17 and 50mm showed partially columnar grained structure 8, 12.3 and 18.5mm respectively from the outer surface. Secondary dendrite arm spacing in the columnar grains slightly increased with increasing casting thickness. Tensile strength of the columnar region was similar regardless of casting thickness. Solidification behavior of the columnar grained region is similar to that of directional solidification, thus solidification rate in the centrifugal cast tube was extrapolated from the secondary dendrite arm spacing data of the directionally solidified material. The equiax grained region formed interior of the thick castings. The tensile strength of the equiaxed region showed the average value of the columnar region which is presumably originated from the grain structure rather than secondary dendrite arm spacing.

• Journal of the Korean Ceramic Society
• /
• v.32 no.10
• /
• pp.1103-1110
• /
• 1995

Silicon carbide (SiC) films have been deposited on the isotropic graphite by chemical vapor deposition. Change of deposition parameters affected significantly the microstructure and preferred orientation of SiC films. Preferred orientation of SiC films was (111) or (220), and microstructure showed the startified structure consisting of small crystallite or faceted columnar structure depending on the deposition parameters. For microhardness, (111) oriented film and stratified structure were superior to (220) oriented film and faceted columnar structure, respectively. Surface of (111) oriented films was less rough than that of (220) oriented films. Adhesion force between graphite substrate and SiC films was above 100N for crystalline films and 49N for amorphous film.

• Journal of Korea Foundry Society
• /
• v.14 no.6
• /
• pp.508-513
• /
• 1994

For Pb-20wt%Cu alloys, severe macrosegregation due to density difference of the resulting phases in normal directional solidification has been minimized and a uniformly aligned dendritic structure has been produced by axially rotating the sample of 5mm diameter in conjunction with horizontal directional solidification. Under the constant growth velocity of $20{\mu}m/sec$, increasing the rotation rate from 0.18 to 12rpm results in a transition from an aligned columnar to an equiaxed Cu-dendritic structure. With a constant rotation rate of 0.18rpm, increasing the growth velocity from 10 to $50{\mu}m/sec$ also has promoted a transition from columnar to equiaxed structure.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.1046-1049
• /
• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• Journal of Korea Foundry Society
• /
• v.7 no.1
• /
• pp.45-52
• /
• 1987

The effects of melting and casting conditions on cast structures of Cu-Sn-Pb alloys were studied. Specimens were prepared at different pouring temperatures of $1100^{\circ}C$ to $1260^{\circ}C$ with use of various kind of molds, green sand mold, $CO_2$ sand mold, shell mold, furan sand mold and metallic mold. (1) The transition of equiaxed to columnar structure greatly influenced by adding elements and mold binders. (2) The change of equiaxed structure according to pouring temperatures were expressed by separation theory. Lower pouring temperature and rapid cooling rate increase hardness and it's further increase was shown in the region of columnar structure. (3) Proper controls of pouring temperature, cooling rate and mold binder were important factors to improve wear properties of Cu-Sn-Pb alloys castings.

• Proceedings of the KIEE Conference
• /
• 1998.11b
• /
• pp.698-701
• /
• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• Proceedings of the KIEE Conference
• /
• 1998.11a
• /
• pp.378-381
• /
• 1998

PLT(28) ($Pb_{0.72}La_{0.28}Ti_{0.93}O_3$) dielectric thin films have been deposited on Pt/Ti/$SiO_2$/Si substrates in situ by a laser ablation. We have systematically changed the laser fluence from $0.5\;J/cm^2$ to $3\;J/cm^2$, and deposition temperature from $450^{\circ}C$ to $700^{\circ}C$. The surface morphology was changed from planar grain structure to columnar structure as the nucleation energy was increased. The PLT thin film with columnar structure showed good dielectric properties. It is shown that the deposition temperature strongly affect the film nucleation compared with the laser fluence.

• Journal of the Korean Crystal Growth and Crystal Technology
• /
• v.19 no.5
• /
• pp.242-245
• /
• 2009

AlN crystals were grown by a sublimation process without seed crystals and the growth morphology of them was characterized. The grown AlN crystals were a polycrystalline phase, which had a diameter of $60\sim200\;{\mu}m$ and were grown with a growth rate of $0.2\sim0.5\;{\mu}n/hr$. It was observed that the as-grown crystals had a hexagonal crystal structure and revealed that these crystals were grown with a morphology of columnar morphology in the initial stage of the growth before they were enlarged in a way of a lateral growth behavior in the final stage. On the surface, a lot of pinholes were observed on the surface of crystals grown. The evolution of a growth morphology was characterized by optical and scanning electron microscopic observation.