• Journal of Advanced Navigation Technology
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• v.10 no.4
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• pp.326-332
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• 2006

In this study, the antenna was proposed for the omni-directional characteristic in horizontal plane. Therefore we proposed $1{\times}4$ microstrip patch array on cylindrical surface for studying microstrip patch antennas. This antenna is designed for 2.45GHz ISM band and applications. This antenna can be applied to the base station of wireless microphone and access point of wireless LAN. The length and width of the patch antenna and the width of the feed line were calculated by using the theory of microstrip patch antenna, by using the both the 2.5D and 3D EM simulators the optimized antenna characteristics are obtained. From result of measured, antenna's impedance of coaxial waveguide port was 51.915-j3.688 ${\Omega}$, the return loss was -31dB and VSWR was 1.081.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2007.06a
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• pp.569-571
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• 2007

In this paper, hem antenna composed of rectangular hern, circular polarizer and straight-type mode convertor is designed and fabricated. The circular polarizer is designed as a dielectric type having broadband characteristic, and it is inserted into the rectangular hem with $45^{\circ}$ inclination. The straight-type mode convertor has a terrace-type structure in order to convert the TEM mode signal of coaxial cable to the TE mode of rectangular waveguide, and this structure minimizes conversion loss. Fabricated hem antenna operates at $30.085\sim30.885GHz$ and has VSWR < 1.5, Axial ratio < 1.0dB and antenna gain of $6.7\sim7.0dBi$ in the band.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.5
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• pp.796-805
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• 2000

A 30GHz band low noise amplifier module, which has linear gain of 30dB and noise figure of 2.6dB, for 30GHz satellite communication transponder was developed by use of MMIC and thin film MIC technologies. Two kinds of MMIC circuits were used for the low noise amplifier module, the first one is ultra low noise MMIC circuit and the other is wideband and high gain MMIC circuit. The pHEMT technology with 0.15$mu extrm{m}$ of gate length was applied for MMIC fabrication. Thin film microstrip lines on alumina substrate were used to interconnect two MMIC chips, and the thick film bias circuit board were developed to provide the stabilized DC bias. The input interface of the low noise amplifier module was designed with waveguide type to receive the signal from antenna directly, and the output port was adopted with K-type coaxial connector for interface with the frequency converter module behind the low noise amplifier module. Space qualified manufacturing processes were applied to manufacture and assemble the low noise amplifier module, and space qualification level of environment tests including thermal and vibration test were performed for it. The developed low noise amplifier was measured to show 30dB of minimum gain, $\pm$0.3dB of gain flatness, and 2.6dB of maximum noise figure over the desired operating frequency range from 30 to 31 GHz.