• Title/Summary/Keyword: coating structure

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Characteristics of Antibacterial Chlorhexidine-Containing Hydroxyapatite Coated on Titanium (타이타늄 상에 코팅된 클로르헥시딘 항균제를 함유한 수산화인회석의 특성)

  • Kim, Min-Hee;Hwang, Moon-Jin;Lee, Woon-Young;Park, Yeong-Joon;Song, Ho-Jun
    • Korean Journal of Dental Materials
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    • v.44 no.3
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    • pp.263-272
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    • 2017
  • In this study, antibacterial chlorhexidine (CHX)-containing hydroxyapatite (HAp) was coated on titanium and investigated its characteristics. Ti-mSBF-CHX group was prepared by soaking titanium disks in the modified simulated body fluid (mSBF) mixed with CHX. Ti-mSBF group was coated using mSBF without CHX. Ti-mSBF-adCHX group was prepared by soaking Ti-mSBF specimen in CHX-containing solution. The crystallines clusters composed with nano-shaped crystallites were coated on the surface of the Ti-mSBF specimen. The ribbon-shaped crystallites were observed with the crystalline clusters on the Ti-mSBF-CHX specimen. The content of CHX chemical compositions was high in ribbon-shaped crystallites. HAp crystalline structure was dominant for all prepared specimens, and ${\beta}-TCP$ (tricalcium phosphate) and OCP (octacalcium phosphate) crystalline structures were observed in the Ti-mSBF-CHX specimen. FT-IR spectra showed the strong peaks of CHX in Ti-mSBF-adCHX and Ti-mSBF-CHX groups. However, after immersing in a phosphate buffered saline (PBS), CHX was rapidly released in Ti-mSBF-adCHX group, while it was slowly released in Ti-mSBF-CHX. We expect that the coating method of Ti-mSBF-CHX group could be used for protecting inflammation of titanium implant by incorporating antibacterial agent CHX into HAp layer.

Dry etching of polycarbonate using O2/SF6, O2/N2 and O2/CH4 plasmas (O2/SF6, O2/N2와 O2/CH4 플라즈마를 이용한 폴리카보네이트 건식 식각)

  • Joo, Y.W.;Park, Y.H.;Noh, H.S.;Kim, J.K.;Lee, S.H.;Cho, G.S.;Song, H.J.;Jeon, M.H.;Lee, J.W.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.16-22
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    • 2008
  • We studied plasma etching of polycarbonate in $O_2/SF_6$, $O_2/N_2$ and $O_2/CH_4$. A capacitively coupled plasma system was employed for the research. For patterning, we used a photolithography method with UV exposure after coating a photoresist on the polycarbonate. Main variables in the experiment were the mixing ratio of $O_2$ and other gases, and RF chuck power. Especially, we used only a mechanical pump for in order to operate the system. The chamber pressure was fixed at 100 mTorr. All of surface profilometry, atomic force microscopy and scanning electron microscopy were used for characterization of the etched polycarbonate samples. According to the results, $O_2/SF_6$ plasmas gave the higher etch rate of the polycarbonate than pure $O_2$ and $SF_6$ plasmas. For example, with maintaining 100W RF chuck power and 100 mTorr chamber pressure, 20 sccm $O_2$ plasma provided about $0.4{\mu}m$/min of polycarbonate etch rate and 20 sccm $SF_6$ produced only $0.2{\mu}m$/min. However, the mixed plasma of 60 % $O_2$ and 40 % $SF_6$ gas flow rate generated about $0.56{\mu}m$ with even low -DC bias induced compared to that of $O_2$. More addition of $SF_6$ to the mixture reduced etch of polycarbonate. The surface roughness of etched polycarbonate was roughed about 3 times worse measured by atomic force microscopy. However examination with scanning electron microscopy indicated that the surface was comparable to that of photoresist. Increase of RF chuck power raised -DC bias on the chuck and etch rate of polycarbonate almost linearly. The etch selectivity of polycarbonate to photoresist was about 1:1. The meaning of these results was that the simple capacitively coupled plasma system can be used to make a microstructure on polymer with $O_2/SF_6$ plasmas. This result can be applied to plasma processing of other polymers.