• Journal of the Korean Vacuum Society
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• v.8 no.1
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• pp.26-30
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• 1999

Sputter deposited Co-Cr thin films been developed continuously as one of the major candidates for high density recording media. In this study, Co-26at%Cr thin films with c-axis oriented normal to substrate surface were prepared by a improved facing targets sputtering system. We find that the effect of microstructural changes of the sputtered Co-Cr thin films on magnetic properties and changes of crystal orientation due to the variation of substrate temperature.

• Korean Journal of Materials Research
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• v.4 no.1
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• pp.9-23
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• 1994

Epitaxial $CoSi_2$ layer has been grown on NaCl(100) substrate at low deposition temperature($200^{\circ}C$) by multitarget bias cosputter deposition(MBCD). The phase sequence and crystallinity of deposited silicide as a function of deposition temperature and substrate bias voltage were studied by X-ray diffraction(XRD) and transmission electron microscopy(TEM) analysis. Crystalline Si was grown at $200^{\circ}C$ by metal induced crystallization(M1C) and self bias effect. In addition to, the MIC was analyzed both theoretically and experimentally. The observed phase sequence was $Co_2Si \to CoSi \to Cosi_2$ and was in good agreement with that predicted by effective heat of formation rule. The phase sequence, the CoSi(l11) preferred orientation, and the crystallinity had stronger dependence on the substrate bias voltage than the deposition temperature due to the collisional cascade mixing, the in-situ cleaning, and the increase in the number of nucleation sites by ion bombardment of growing surface. Grain growth induced by ion bombardment was observed with increasing substrate bias voltage at $200^{\circ}C$ and was interpreted with ion bombardment dissociation model. The parameters of $E_{Ar}\;and \alpha(V_s)$ were chosen to properly quantify the ion bombardment effect on the variation in crystallinty at $200^{\circ}C$ with increasing substrate bias voltage using Langmuir probe.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1699-1701
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• 1999

We prepared diamond thin films on WC-Co substrate in $H_2-CH_4-O_2$ gas mixture using 13.56MHz RF PACVD. Scanning electron microscopy, X-ray diffraction and Raman spectroscopy were used to analyze the nature of thin film. and Rockwell test to analyze the adhesion between thin film and substrate. The good diamond quality and adhesion was appeared with cemented tungsten carbide substrate treated with oxygen plasma.

• Proceedings of the KIEE Conference
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• 2003.10a
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• pp.42-44
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• 2003

The paper presents the method and apparatus for conformal photoresist spray coating on the 3D structured substrate. The system consists of a high-temperature-rotational chuck, ultrasonic spray nozzle module, angle control module and nozzle moving module. The coating uniformity is acquired by controlling the moving speed of the ultrasonic spray nozzle across the substrate which is rotated constantly. To coat the photoresist conformally the spray angle of the nozzle and the temperature of the substrate are controlled during spray coating. The rotational chuck can be heated up by hot air or $N_2$. The photoresist (AZ1512) has been coated on the 3D structured wafer by spray coating system and the characteristics have been evaluated.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.145.2-145.2
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• 2016

We report the phase transformation of Co thin films on a sapphire substrate induced by laser irradiation. As grown Co films were initially strained and tetragonally distorted. With low power laser irradiation, the surface was ruptured and irregular holes were formed. As the laser power was increased, the films changed into round shape Co nanocrystals with well-defined 6-fold structure. By measuring the XRD of Co nanostructure as a function of laser energy densities, we found that the change of morphological shapes from films to nanocrystals was accompanied with decrease of the tetragonal distortion as well as strain relaxation. By measuring the size distribution of nanocrystals as a function of film thickness, the average diameter is proportional to 1.7 power of the film thickness which was consistent with the prediction of thin film hydrodynamic (TFT) dwetting theory. Finally, we fabricated the formation of size controlling nanocrystals on the sapphire substrate without strain.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.2
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• pp.91-95
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• 2012

ZnO thin films were deposited on p-type 4H-SiC substrate by pulsed laser deposition. ZnO nanowires were formed on p-type 4H-SiC substrate by furnace. Ti/Au electrodes were deposited on ZnO thin film/SiC and ZnO nanowire/SiC structures, respectively. Structural and crystallographical properties of the fabricated ZnO thin film/SiC and ZnO nanowire/SiC structures were investigated by field emission scanning electron microscope and X-ray diffraction. In this work, resistance and sensitivity of ZnO thin film/SiC gas sensor and ZnO nanowire/SiC gas sensor were measured at $300^{\circ}C$ with various CO gas concentrations (0%, 90%, 70%, and 50%). Resistance of gas sensor decreases at CO gas atmosphere. Sensitivity of ZnO nanowire/SiC gas sensor is twice as big as sensitivity of ZnO thin film/SiC gas sensor.

• KSBB Journal
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• v.14 no.3
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• pp.315-321
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• 1999

The relationships between the explosive 2,4,6-trinitrotoluene (TNT) degradation by Stenotrophomonas maltophilia and several relevant physicochemical environmental parameters were examined. At neutral pH of the cultures, the degradation of TNT proceeded to completion, whereas only about 50% of TNT was utilized when the cultures were adjusted to acidic pH. The effect of various co-substrates (e.g., glucose, fructose, acetate, citrate, succinate) on the degradation of TNT by the test culture of S. maltophilia was evaluated. The results indicated that, among the various co-substrates studies, the test culture that received 2 mM fructose degraded 100 mg/L of TNT completely within 20 days of incubation at ambient temperature, whereas partial degradation of TNT was observed in the test culture with acetate, citrate, or succinate as a co-substrate, respectively. In fact, fructose was the best co-substrate for TNT degradation in this experiment. The effect of supplemented nitrogens [e.g., (NH$_4$)$_2$,SO$_4$, NH$_4$Cl. urea] on the TNT degradation was monitored. All supplemented nitrogens in this study were inhibitory to TNT degradation. Addition of 1% Tween80 accelerated TNT degradation, and showed complete degradation of TNT within 8 days of incubation. Addition of yeast extract resulted higher growth yields, based on turbidity measurement, but it inhibited TNT degradation.

• Journal of the Korean institute of surface engineering
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• v.42 no.3
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• pp.122-127
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• 2009

Ga/Al doped ZnO (GAZO) thin films were prepared on non-alkali glass substrate by co-sputtering system using two DC cathodes equipped with AZO ($Al_2O_3$:2.0 wt%) target and GZO ($Ga_2O_3$:6.65 wt%) target. This study examined the influence of Al/Ga concentration and substrate temperature on the electrical, structural and optical properties of GAZO films. The lowest resistivity $1.95{\times}10^{-3}{\Omega}cm$ was obtained at room temperature. With increasing substrate temperature, resistivity of GAZO film decreased to a minimum value of $7.47{\times}10^{-4}{\Omega}cm$ at below $300^{\circ}C$. Furthermore, when 0.05% $H_2$ gas was introduced, resistivity of GAZO film decreased to $6.69{\times}10^{-4}{\Omega}cm$. All the films had a preferred orientation along the (002) direction, indicating that the deposited films have hexagonal wurtzite structure formed by the textured growth along the c-axis. The average transmittance of the films was more than 85% in the visible light range.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.596-602
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• 2000

Diamond thin films were synthesized on WC-Co substrate at various experimental parameters using 13.56MHz RF PACVD)radio frequency plasma-assisted chemical vapor deposition). In order to increased the nucleation density, the WC-Co substrate was polished with 3${\mu}m$ diamond paste. And the WC-Co substrate was preatreated in $HNO_3\;:\;H_2O$ = 1:1 and $O_2$ plasma. In $H_2-CH_4$ gas mixture, the crystallinity of thin film increased with decreasing $CH_4$ concentration at 800W discharge power and 20torr reaction pressure. In $H_2-CH_4-O_2$ gas mixture, the crystallinity of thin film increased with increasing $O_2$ concentration at 800W discharge power, 200torr reaction pressure and 4% $CH_4$ concentration.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.12 no.1
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• pp.27-30
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• 2002

ZnO co-doped Er:$LiNbO_3$ single crystal thin films have been grown on $LiNbO_3$ (001) substrate by liquid phase epitaxy (LPE) method. The melts of ZnO co-doped Er:$LiNbO_3$ was fixed $Er_2O_3$, concentration (1 mol%) and different ZnO concentrations 3 and 5 mol%. The crystallinity of ZnO co-doped Er :$LiNbO_3$ films became better than the $LiNbO_3$ substrate. At ZnO 5 mol% concentration, the surface of ZnO co-doped Er:$LiNbO_3$ film is affected by compressive stress along both the perpendicular and the parallel direction. Also the surface of ZnO 3 mol% co-doped Er:$LiNbO_3$film is smoother than the original $LiNbO_3$ substrate surface.