• Journal of the Korean Magnetics Society
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• 제14권6호
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• pp.236-239
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• 2004

We studied the specular spin valve (SSV) having the spin filter layer (SFL) in contact with the ultrathin free layer composed of Ta3/NiFe2/IrMn7/CoFel/(NOLl)/CoFe2/Cu1.8/CoFe( $t_{F}$)/Cu( $t_{SF}$ )/(NOL2)/Ta3.5 (in nm) by the magnetron sputtering system. For this antiferromagnetic I $r_{22}$M $n_{78}$-pinned spin filter specular spin valve (SFSSV) films, an optimal magnetoresistance (MR) ratio of 11.9% was obtained when both the free layer thickness ( $t_{F}$) and the SFL thickness ( $t_{SF}$ ) were 1.5 nm, and the MR ratio higher than 11% was maintained even when the $t_{F}$ was reduced to 1.0 nm. It was due to increase of specular electron by the nano-oxide layer (NOL) and of current shunting through the SFL. Moreover, the interlayer coupling field ( $H_{int}$) between free layer and pinned layer could be explained by considering the RKKY and magnetostatic coupling. The coercivity of the free layer ( $H_{cf}$ ) was significantly reduced as compared to the traditional spin valve (TSV), and was remained as low as 4 Oe when the $t_{F}$ varied from 1 nm to 4 urn. It was found that the SFL made it possible to reduce the free layer thickness and enhance the MR ratio without degrading the soft magnetic property of the free layer.

• Journal of the Korean Magnetics Society
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• 제9권2호
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• pp.111-120
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• 1999

The effects of annealing in rotating magnetic field after deposition on electromagnetic properties of $Co_{82}Zr_6Mo_{12}$ thin (200~1200 $\AA$) films prepared by RF-magnetron sputtering were investigated in terms of microstructure and surface morphology. The coercivity decreases, but $4{\pi}M_5$ does not change with increasing the film thickness. The coercivity of the films was decreased below 300 $^{\circ}C$ due to stress relief and decreasing the surface roughness, while increased at 400 $^{\circ}C$ due to partial grain growth. And then, $4{\rho}M_5$ was almost independent of annealing temperatures below 200 $^{\circ}C$, but increased from 7.4 kG to 8.0 kG at 300 $^{\circ}C$ and at 400 $^{\circ}C$, which was caused by precipitation and growth of fine Co particles in the films. The electrical resistivity of films was decreased with increasing annealing temperatures and the magnetoresistance was a negative value of nearly 0 $\mu$$\Omega$cm. After annealing at 300 $^{\circ}C$, maximum effective permeability was 1200 to the hard axis of the thin films according to high frequency change. Considering the practical application of biasing layers of the films for magnetoresistive heads, optimal annealing conditions was obtained after one hour annealing at 300 $^{\circ}C$ in 400 Oe rotating magnetic field.

• Journal of the Korean Magnetics Society
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• 제18권4호
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• pp.142-146
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• 2008

The angular dependence of the exchange bias($H_{ex}$) and coercivity($H_c$) in multilayer $[Pt/Co]_N-IrMn$ with applied measuring field rotated toward in-plane at angle $\theta$ from perpendicular-to-plane, has been measured. Multilayer films consisting of $Si/SiO_2/Ta(50)/Pt(4)/[Pt(15)/Co(t_{Co})]_N/IrMn(50)/Ta(50)(in\;{\AA})$ were prepared by magnetron sputtering under typical base pressure below $2{\times}10^{-8}$ Torr at room temperature. Magnetization measurements were performed on a vibrating sample magnetometer and extraordinary Hall voltage measurement systems after cooling from 550 K under a field of 2 kOe applied along the perpendicular to film direction. The hysteresis loop shifts from the origin not only along the field axis but also along the magnetization axis. $H_{ex}$ and $H_c$ show a $1/cos{\theta}$ and $1/|cos{\theta}|$ dependence on the angle($\theta$) between the applied measuring field and the perpendicular-film direction, respectively. This $1/cos{\theta}$ dependence can be accounted for by considering the angular dependence of strong out-of-plane magnetic anisotropy introduced during the field cooling.

• Journal of the Korean institute of surface engineering
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• 제48권2호
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• pp.33-37
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• 2015

High efficiency LED device is being concerned due to its high heat loss, and such heat loss will cause a shorter lifespan and lower efficiency. Since there is a demand for the materials that can release heat quickly into the external air, the organic insulating layer was required to be replaced with high thermal conductive materials such as metal or ceramics. Through anodizing the upper layer of Al, the Breakdown Voltage of 3kV was obtained by using an uniform thickness of $60{\mu}M$ aluminum oxide($Al_2O_3$) and was carried out to determine the optimum process conditions when thermal cracking does not occur. Two Ni layers were formed above the layer of $Al_2O_3$ by sputtering deposition and electroplating process, and saccharin was added for the purpose of minimizing the remain stress in electroplating process. The results presented that the 3-layer film including the Ni layer has an adhesive force of 10N and the thermal conductivity for heat dissipation is achieved by 150W/mK level, and leads to improvement about 7 times or above in thermal conductivity, as opposed to the organic insulation layer.

• Journal of Sensor Science and Technology
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• 제6권3호
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• pp.188-193
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• 1997

The lanthanum-modified lead titanate (PLT) thin films on (100) cleaved MgO single crystal substrate have been prepared by RF magnetron sputtering method using PbO-rich target with varing La contents. The substrate temperature, working pressure, $Ar/O_{2}$, and RF power density of PLT thin films were $580^{\circ}C$ 10mTorr, 10/1, and $1.7W/cm^{2}$, respectively. In these conditions, the c-axis growth and tetragonality of the PLT thin films decreased for addition of La content and the PLT thin films showed diffuse phase transition from high temperature XRD patterns. The infrared sensor was fabricated. The remanent polarization was above $1.71{\mu}C/cm^{2}$ and the pyroelectric voltage was above 500mV with 10:1 signal to noise ratio.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.61-64
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• 2003

This paper presents Bi thin films have been fabricated by atomic layer-by-layer deposition and co-deposition at an IBS method. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. Mg(100) was used as a substrate. In order to appreciate stable existing region of Bi 2212 phase with temperature and ozone pressure, the substrate temperature was varied between 655 and $820^{\circ}C$ and the highly condensed ozone gas pressure$(PO_3)$ in vacuum chamber was varied between $2.0{\times}10^{-6}$ and $2.3{\times}10^{-5}$ Torr. Bi 2212 phase appeared in the temperature range of 750 and $795^{\circ}C$ and single phase of Bi 2201 existed in the lower region than $785^{\circ}C$. Whereas, $O_3$ dependance on structural formation was scarcely observed regardless of the pressure variation. And high quality of c-axis oriented Bi 2212 thin film with $T_c$(onset) of about 90 K and $T_c$(zero) of about 45 K is obtained. Only a small amount of CuO in some films was observed as impurity, and no impurity phase such as $CaCuO_2$ was observed in all of the obtained films.

• Transactions on Electrical and Electronic Materials
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• 제14권6호
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• pp.321-323
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• 2013

100 nm thick Ga doped ZnO (GZO) thin films were deposited with DC and RF magnetron sputtering at room temperature on glass substrate and Al coated glass substrate, respectively. and the effect of the Al underlayer on the optical and electrical properties of the GZO films was investigated. As-deposited GZO single layer films had an optical transmittance of 80% in the visible wavelength region, and sheet resistance of 1,516 ${\Omega}/{\Box}$, while the optical and electrical properties of GZO/Al bi-layered films were influenced by the thickness of the Al buffer layer. GZO films with 2 nm thick Al film show a lower sheet resistance of 990 ${\Omega}/{\Box}$, and an optical transmittance of 78%. Based on the figure of merit (FOM), it can be concluded that the thin Al buffer layer effectively increases the performance of GZO films as a transparent and conducting electrode without intentional substrate heating or a post deposition annealing process.

• Journal of the Korean Society for Heat Treatment
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• 제27권1호
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• pp.23-26
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• 2014

Ga doped ZnO (GZO) single layer and GZO/ZnO bi-layered films were deposited on glass substrates by radio frequency magnetron sputtering and then the influence of film thickness on the structural, electrical, and optical properties of the films was considered. Thicknesses of the GZO/ZnO films was varied as GZO 100 nm, GZO 85 nm/ZnO 15 nm and GZO 70 nm/ZnO 30 nm, respectively. The observed result means that optical transmittance and electrical resistivity of the films were influenced with film thickness and GZO 85 nm/ZnO 15 nm bilayered films show the higher figure of merit than that of the films prepared other films in this study.

• Journal of the Korean Magnetics Society
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• 제13권2호
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• pp.47-52
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• 2003

Ferromagnetic tunnel junctions were fabricated by dc magnetron sputtering and plasma oxidation process. The local transport properties of the ferromagnetic tunnel junctions were studied using contact-mode Atomic Force Microscopy (AFM) and the local current-voltage analysis. Tunnel junctions with the structure of sub./Ta/Cu/Ta/NiFe/Cu/Mn$\_$75/Ir$\_$25//Co$\_$70/Fe$\_$30//Al-oxide were prepared on thermally oxidized Si wafers. Al-oxide layers were formed with microwave excited plasma using radial line slot antenna (RLSA) for 5 and 7 sec. Kr gas was used as the inert gas mixed with $O_2$ gas for the plasma oxidization. No correlation between topography and current image was observed while they were measured simultaneously. The local current distribution was well identified with the distribution of local barrier height. Assuming the gaussian distribution of the local barrier height, the ferromagnetic tunnel junction with longer oxidation time was well fitted with the experimental results. As contrast, in the case of the shorter time oxidation junction, the current mainly flow through the low barrier height area for its insufficient oxygen. Such leakage current might result in the decrease of tunnel magnetoresistance (TMR) ratio.

• Journal of the Korean Magnetics Society
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• 제10권3호
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• pp.118-122
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• 2000

MR characteristics of $Al_2$ $O_3$ based magnetic tunneling juction with various $Al_2$ $O_3$ thicknesses were investigated. Spin-dependent tunneling junctions, in which the tunneling barrier $Al_2$ $O_3$ is formed by depositing a 1-3 nm thick Al layer, followed by thermal oxidation at room temperature in an $O_2$atmosphere, were fabricated on 4$^{\circ}$tilt(111)Si substrate in 3-gun magnetron sputtering system. The top and bottom ferromagnetic electrodes were Ni$_{80}$Fe$_{20}$ and Co. A maximum Tunneling MR ratio of 14% was obtained in the junction of which insulating barrier thickness was 2 nm. By increasing the tunneling voltage across the junction, maximum MR ratio reduced and finally showed no MR characteristics.s.