• Journal of the Korean Chemical Society
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• v.48 no.5
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• pp.467-472
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• 2004

Cyanobacterial toxins, microcystins which exist in korean lakes show strong toxicity to fish, cattles and human. In this study, we tried to degrade microcystin LR using various chemical oxidants, Chlorine, Potassium permanganate and Hydrogen Peroxide. The detection method for the concentrations of microcystin LR in water samples was Enzyme-Linked Immunosorbent Assay (ELISA) method using the monoclonal antibody of microcystin. Chlorine degraded microcystin LR effectively at the concentration of 800 pg/mL microcystin LR and 12 ppm chlorine. The reaction took 40 minutes at pH 7. Potassium Permanganate also degraded microcystin LR successfully at the concentration of 2000 pg/mL microcystin LR and 1.2 ppm chlorine. The degradation reaction took 60 minutes at pH 7. In the case of hydrogen peroxide, the degradation rate of microcystin LR was very slow because of the slow reaction rate.

• Journal of Digital Convergence
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• v.15 no.6
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• pp.339-344
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• 2017

In this study, microorganisms were isolated from nosocomial environment and are identified by biochemical analysis as the part of biochemical and technical convergence. Microorganisms were collected at intense care unit of general hospital located in Pyeongtak (2014.11.28. - 2014. 11. 30). Using a VITEK2 equipment of biochemical approaches, eleven microorganisms e.g., Micrococcus luteus (or M. lylae), Granulicatella adiacens (M. luteus or M. lylae), Staphylococcus caprae, Sphingomonas paucimobilis, Kocuria kristinae, G elegans, Aerococcus viridans (or Staphylococcus arlettae), Methylobacterium spp., Dermacoccus nishinomiyaensis (or Kytococcus sedentarius), Kocuria kristinae (or M. luteus, M. lylae), Pseudomonas oryzihabitans were identified. And then identified bacteria plates were applied with a plastic stick, so called with "FarmeTok (medistick/Puristic) to produce ClO2. ClO2-releasing plastic stick showed the very strong inhibition of bacterial growth with about 99.9%. There were no bacterial colonies on the ClO2-incubated plate. Taken together, it is suggested that chlorine dioxide should be very strong inhibitor to microorganisms of nosocomial infections.

• Food Science and Preservation
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• v.15 no.5
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• pp.754-759
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• 2008

The effect of citric acid-aqueous chlorine dioxide ($ClO_2$) treatment of radish seeds artificially contaminated with Salmonella typhimurium was studied. Radish seeds were inoculated by immersion, in more than 106 log CFU/g seed, of a suspension of S. typhimurium, dried, and stored sealed at $4^{\circ}C$ Radish seeds soaked in 200 ppm aqueous ClO2 solution for 10 min showed a bacterial reduction of 1.08 log CFU/g seed, and the lowering of microbial burden noted in seeds soaked in 2% (w/v) citric acid solution for 10 min was 2.89 log CFU/g seed. Next, radish seeds were exposed to 0.5% (v/v) glycerol solution for 10 min either before or after treatment with 200 ppm aqueous ClO2 or 2% (w/v) citric acid for 10 min. Glycerol exposure after citric acid treatment reduced bacteria by 3.46 log CFU/g seed, and glycerol treatment after aqueous $ClO_2$ treatment reduced the microbial burden by 2.14 log CFU/g seed. Both glycerol treatments yielded better elimination of S. typhimurium than did a single treatment with either citric acid or aqueous $ClO_2$. Radish seeds inoculated with S. typhimurium were treated throughout the entire growth period. Although radish seed treatment was effective, treatment by citric acid and aqueous $ClO_2$ after sprouting was not effective to eliminate S. typhimurium.

• Journal of Marine Life Science
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• v.2 no.2
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• pp.49-55
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• 2017

Four chemical treatments with hydrogen peroxide (H₂O₂), copper sulfate (CuSO₄), potassium permanganate (KMnO₄) and chlorine (Cl₂) were applied to the effluent pond water of a hybrid striped bass saltwater recirculating aquaculture system to compare their oxidation power. Four chemicals were applied at concentrations of 0 (control), 1, 5, 10 and 20 mg/l. An additional concentration of 40 mg/l was included in the chlorine treatment. Water samples from four hybrid striped bass ponds were tested with KMnO₄ and Cl₂. H₂O₂ did not reduce any of BOD, COD and chlorophyll-a, and copper sulfate was only effective on chlorophyll-a for the effluent pond. Removal efficiencies for chlorophyll-a by copper sulfate were 19.2%, 37.5%, 54.2% and 74.1% dose-dependently. Potassium permanganate effectively removed the BOD, COD and chlorophyll-a. The COD removal rates in four fish ponds varied from 15.9% to 31.6% at the concentration of 10 mg/l. Interestingly, Cl₂ did not reduce the BOD and COD at all, but the BOD and COD instead increased drastically with increasing the Cl₂ concentration. The pond water with the highest initial BOD and COD values among the fish ponds tested increased by 350% in the BOD and 150% in the COD at 20 mg/l. Furthermore, Cl₂ did not significantly reduce any types of solid matter in this study, while KMnO₄ seemed to reduce some extent volatile dissolved solid in the fish pond.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.65-65
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• 1999

Dry etching technique provides more easy controllability on the etch profile such as anisotropic etching than wet etching process and the results of lots of researches on the characterization of various plasmas or ion beams for semiconductor etching have been reported. Chlorine-based plasmas or chlorine ion beam have been often used to etch several semiconductor materials, in particular Si-based materials. We have studied the effect of He flow rate on the Si and SiO2 dry etching using chlorine-based plasma. Experiments were performed using reactive ion etching system. RF power was 300W. Cl2 gas flow rate was fixed at 58.6 sccm, and the He flow rate was varied from 0 to 120 sccm. Fig. 1 presents the etch depth of si layer versus the etching time at various He flow rate. In case of low He flow rate, the etch rate was measured to be negligible for both Si and SiO2. As the He flow increases over 30% of the total inlet gas flow, the plasma state becomes stable and the etch rate starts to increase. In high Ge flow rate (over 60%), the relation between the etch depth and the time was observed to be nearly linear. Fig. 2 presents the variation of the etch rate depending on the He flow rate. The etch rate increases linearly with He flow rate. The results of this preliminary study show that Cl2/He mixture plasma is good candidate for the controllable si dry etching.

• Journal of the Korean Ceramic Society
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• v.31 no.10
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• pp.1188-1196
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• 1994

TiN films were deposited onto high speed steel(SKH9) and silicon wafer by plasma-assisted chemical vapor deposition(PACVD) using a TiCl4/N2/H2/Ar gas mixture. The effects of deposition temperature, R.F. power, and H2 concentration on the deposition of TiN were studied. The residual chlorine content and the microhardness of TiN films were also investigated. It was found that TiN films grew with a columnar structure of a strong (200) preferred orientation regardless of the substrate type and the deposition variables. The TiN films consisted of columnar-grains of about 50 to 100 nm in diameter. The columnar grains themselves contained much finer fibrous grains. As deposition temperature increased, the residual chlorine content decreased sharply. R. F. powder enhanced the deposition rate largely. Increasing of H2 concentration had little effect on the residual chlorine.

• Korean Chemical Engineering Research
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• v.51 no.3
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• pp.407-410
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• 2013

The chlorination of a metallurgical-grade silicon was carried out in a fluidized bed reactor, 25 mm in diameter. The flow rate of the chlorine admitted into the reactor was 0.2 L/min and that of the carrier nitrogen was 0.8~1.0 L/min. The reactor temperature was maintained at $450^{\circ}C$ and the temperature of the coolant at the $SiCl_4$ condenser was at $-5^{\circ}C$. The $SiCl_4$ yield increased with increasing the mole fraction of chlorine in the feed gas, exhibiting 28% at the mole fraction of 0.2. Further increase of the chlorine mole fraction was not attempted in a worry that the reactor might be failed due to the high exothermicity of the reaction. The production of $SiCl_4$ from silicon by fluidized bed chlorination was demonstrated on a laboratory scale, which is a stepping stone for future studies under more severe conditions toward industrial application.

• Resources Recycling
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• v.27 no.5
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• pp.54-60
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• 2018

The quality of steel produced from scrap can be adversely affected because of the buildup of tramp elements in recycled scrap. The tramp element of greatest concern is copper because of its effect on steel quality, even in small percentage quantities. In this study, possibility of removal of copper from ferrous scrap by using $Cl_2$ gas is experimentally examined in a small size experimental apparatus. Synthetic ferrous scraps containing copper were reacted with $Cl_2$ gas in various atmosphere. The copper was chloridized and evaporated, whereas iron was oxidized and was not reacted with Cl2 and oxygen mixture gas.

• Journal of the Korean Vacuum Society
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• v.2 no.2
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• pp.188-198
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• 1993

We have developed a technique for growing thin oxides (6~10 nm) by the Last step TCA method. N-channel metal-oxide-semiconductor (n-MOS) capacitor and n-channel metal-oxide-semiconductor field-effect transistor's (MOSFET's) having a gate oxide with chlorine incorporated $SiO_2/Si$ interface have been analyzed by electrical measurements and physical methods, such as secondary ion mass spectrometry (SIMS) and electron spectroscopy for chemical analysis (ESCA). The gate oxide grown with the Last strp TCA method has good characteristics as follows: the electron mobility of the MOSFET's with the Last step TCA method was increased by about 7% and the defect density at the $SiO_2/Si$ interface decreases slightly compared with that with No TCA method. In reliability estimation, the breakdown field was 18 MV/cm, 0.6 MV/cm higher than that of the gate oxide with No TCA method, and the lifetime estimated by TDDB measurement was longer than 20 years. The device lifetime estimated from hot-carrier reliability was proven to be enhanced. As the results, the gate oxide having a $SiO_2/Si$ interface incorporated with chlorine has good characteristics. Our new technique of Last step TCA method may be used to improve the endurance and retention of MOSFET's and to alleviate the degradation of thin oxides in short-channel MOS devices.

• YAKHAK HOEJI
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• v.13 no.2_3
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• pp.57-61
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• 1969

From the principle of CHN-Corder analysis, it is obvious that seperation of chlorine and bromine in a sample is nearly impossible. In order to analyze, chlorine, bromine, and sulfur seperately in a sample which is a single organic compound or a mixture of organic drugs, combination of flask combustion method and CHN-Corder was successfully attempted.