• Title/Summary/Keyword: chip LED

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Luminescence Characteristics of Mg2+·Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes (LED용Mg2+·Ba2+Co-Doped Sr2SiO4:Eu 노란색 형광체의 발광특성)

  • Choi, Kyoung-Jae;Jee, Soon-Duk;Kim, Chang-Hae;Lee, Sang-Hyuk;Kim, Ho-Kun
    • Journal of the Korean Ceramic Society
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    • v.44 no.3 s.298
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    • pp.147-151
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    • 2007
  • An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

Optical Properties of the Eu2+ Doped Li2SrSiO4-αNα (Li2SrSiO4-αNα에 첨가된 Eu2+의 광학적 특성)

  • Namkhai, Purevdulam;Kim, Taeyoung;Woo, Hyun-Joo;Jang, Kiwan;Jeong, Jung Hyun
    • New Physics: Sae Mulli
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    • v.68 no.11
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    • pp.1196-1202
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    • 2018
  • $Li_2Sr_{1-x}Eu_xSiO_{4-{\alpha}}N_{\alpha}$ ($Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$) phosphors were synthesized by using a solid state reaction (SSR) method with submicron $Si_3N_4$ and nano $Si_3N_4$ powders as the sources of Si and N, and the optical properties of those phosphors were studied. The studied phosphors showed efficient excitation characteristics over the broad range from 230 to 530 nm. Also, They showed broad emission spectra covering a range from 500 to 700 nm, with a peak at 568 nm, which was shifted longer wavelength by 18 nm as compared with that of commercial $YAG:Ce^{3+}$. Combined with a 450 nm blue LED chip, the results support the application of the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}:Eu^{2+}$ phosphor as a luminescent material for a white-light source thaat is warmer than the commercial $YAG:Ce^{3+}$ white-light source. In addition, the $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$ phosphors prepared from a submicron $Si_3N_4$ powder was found to emit a previously unreported self-activated luminescence in $Li_2SrSiO_{4-{\alpha}}N_{\alpha}$.

Behavior of Vibration Fracture for Sn-Ag-Cu-X Solders by Soldering (Sn-Ag-Cu-X 무연솔더로 솔더링 된 접합부의 진동파괴 거동)

  • Jin, Sang-Hun;Kang, Nam-Hyun;Cho, Kyung-Mox;Lee, Chang-Woo;Hong, Won-Sik
    • Journal of Welding and Joining
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    • v.30 no.2
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    • pp.65-69
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    • 2012
  • Environmental and health concerns over the lead have led to investigation of the alternative Pb-free solders to replace commonly used Pb-Sn solders in microelectronic packaging application. The leading candidates for lead-free solder alloys are presently the near eutectic Sn-Ag-Cu alloys. Therefore, extensive studies on reliability related with the composition have been reported. However, the insufficient drop property of the near eutectic Sn-Ag-Cu alloys has demanded solder compositions of low Ag content. In addition, the solder interconnections in automobile applications like a smart box require significantly improved vibration resistance. Therefore, this study investigated the effect of alloying elements (Ag, Bi, In) on the vibration fatigue strength. The vibration fatigue was conducted in 10~1000Hz frequency and 20Grms. The interface of the as-soldered cross section close to the Cu pad indicated the intermetallic compound ($Cu_6Sn_5$) regardless of solder composition. The type and thickness of IMC was not significantly changed after the vibration test. It indicates that no thermal activities occurred significantly during vibration. Furthermore, as a function of alloying composition, the vibration crack path was investigated with a focus on the IMCs. Vibration crack was initiated from the fillet surface of the heel for QFP parts and from the plating layer of chip parts. Regardless of the solder composition, the crack during a vibration test was propagated as same as that during a thermal fatigue test.

(A study on the Telemetry monitoring and control of the multi environment factor) (다중 환경요소의 원격감시 및 제어에 대한 연구)

  • Ju, Gwi-Yeong;Choe, Jo-Cheon
    • Journal of the Institute of Electronics Engineers of Korea SC
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    • v.39 no.1
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    • pp.7-15
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    • 2002
  • This paper is concerned with remote environment monitoring & control for the breeding house as scattering far and wide. The environment data is detected in the breeding house that is collected to one processor. It's adapted to the PSTN(public switch tele-phone network) and multi-processing for exchange the environment data and the control data in between the manager and a breeding house by micro-processor. We have designed the algorithm of the communication sequence through the experimental research. This system is composed of sensor interface, FSK communications, LED display, data latch and MCS-51 single-chip. The S/W is composed with data acquisition by multi-processing, data communication and interrupt. And this paper is Proposed the DB structure algorithm concern to a mount scale using web design. The subject is a performance of effective management for the breeding house.

Gene Expression Profiling of Doxifluridine Treated Liver, Small and Large Intestine in Cynomolgus (Macaca fascicularis) Monkeys

  • Jeong, Sun-Young;Park, Han-Jin;Oh, Jung-Hwa;Kim, Choong-Yong;Yoon, Seok-Joo
    • Molecular & Cellular Toxicology
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    • v.3 no.2
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    • pp.137-144
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    • 2007
  • The mechanism of cytotoxicity of doxifluridine, a prodrug fluorouracil (5-FU), has been ascribed to the misincorporation of fluoropyrimidine into RNA and DNA and to the inhibition of the nucleotide synthetic enzyme thymidylate synthase. Increased understanding of the mechanism of 5-FU has led to the development of strategies that increases its anticancer activity or predicts its sensitivity to patients. Using GeneChip?? Rhesus Macaque Genome arrays, we analyzed gene expression profiles of doxifluridine after two weeks repeated administration in cynomolgus monkey. Kegg pathway analysis suggested that cytoskeletal rearrangement and cell adhesion remodeling were commonly occurred in colon, jejunum, and liver. However, expression of genes encoding extracellular matrix was distinguished colon from others. In colon, COL6A2, COL18A1, ELN, and LAMA5 were over-expressed. In contrast, genes included in same category were down-regulated in jejunum and liver. Interestingly, MMP7 and TIMP1, the key enzymes responsible for ECM regulation, were overexpressed in colon. Several studies were reported that both gene reduced cell sensitivity to chemotherapy-induced apoptosis. Therefore, we suggest they have potential as target for modulation of 5-FU action. In addition, the expression of genes which have been previously known to involve in 5-FU pathway, were examined in three organs. Particularly, there were more remarkable changes in colon than in others. In colon, ECGF1, DYPD, TYMS, DHFR, FPGS, DUT, BCL2, BAX, and BAK1 except CAD were expressed in the direction that was good response to doxifluridine. These results may provide that colon is a prominent target of doxifluridine and transcriptional profiling is useful to find new targets affecting the response to the drug.

Reactive Ion Etching and Magnetically Enhanced Reactive Ion Etching Process of Low-K Methylsilsequioxane Insulator Film using $CF_4$ and $O_2$ ($CF_4$$O_2$를 이용한 저유전율 물질인 Methylsilsequioxane의 RIE와 MERIE 공정)

  • Jung, Do-Hyun;Lee, Yong-Soo;Lee, Kil-Hun;Kim, Kwang-Hun;Lee, Hee-Woo;Choi, Jong-Sun
    • Proceedings of the KIEE Conference
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    • 2000.07c
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    • pp.1491-1493
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    • 2000
  • Continuing improvement of microprocessor performance involves in the device size. This allow greater device speed, an increase in device packing density, and an increase in the number of functions that can reside on a single chip. However this has led to propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance(RC) coupling become significant due to increased wiring capacitance, especially interline capacitance between the metal lines on the same metal level. So, MSSQ which has the permittivity between 2.5-3.2 is used to prevent from these problems. For pattering MSSQ(Methylsilsequioxane), we use RIE(Reactive Ion Etching) and MERIE(Magnetically enhanced Reactive Ion Etching) which could provide good anisotropic etching. In this study, we optimized the flow rate of $CF_{4}/O_2$ gas, RF power to obtain the best etching rate and roughness and also analyzed the etching result using $\alpha$-step profilemeter, SEM, infrared spectrum and AFM.

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Effects of Temperature/Humidity Treatment Conditions on the Peel Strength between Screen-printed Ag and Polyimide Films (고온/고습 조건이 스크린 프린팅 Ag와 Polyimide의 필 강도에 미치는 영향)

  • Lee, Hyeonchul;Bae, Byeong-Hyun;Son, Kirak;Kim, Gahui;Park, Young-Bae
    • Journal of the Microelectronics and Packaging Society
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    • v.29 no.2
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    • pp.43-48
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    • 2022
  • Effect of temperature/humidity (T/H) treatment conditions on the peel strength of screen-printed Ag/polyimide (PI) structures was evaluated by peeling PI films in 90° peel test. Initial peel strength was 25.99±1.47 gf/mm, and then decreased to 6.05±0.54 gf/mm after 500 h at 85℃/85% relative humidity T/H condition. And, the peeled locus was changed from Ag/PI interface to shallow cohesive inside PI near interface. X-ray photoelectron spectroscopy analysis on the peeled surfaces showed that the long-term moisture penetration into the Ag/PI interface during T/H treatment led to hydrolytic degradation of PI to form weak boundary layer inside PI near Ag/PI interface, which are responsible for large decrease in peel strength.

Machining Characteristics of SiC reinforced Composite by multiple diamond-coated drills (다이아몬드 피복공구에 의한 SiC 강화 복합재료의 절삭특성)

  • M. Chen;Lee, Y. M.;S. H. Yang;S. I. Jang
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2003.06a
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    • pp.533-537
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    • 2003
  • Compared to sintered polycrystalline diamond (PCD), the deposited thin film diamond has a great advantage on the fabrication of cutting tools with complex geometries such as drills. Because of high performance in high speed machining non-ferrous difficult-to-cut materials in the field of automobiles industry, aeronautics and astronautics industry, diamond-coated drills find large potentialities in commercial applications. However, the poor adhesion of the diamond film on the substrate and high surface roughness of the drill flute adversely affect the tool lift and machining quality and they become the main technical barriers for the successful development and commercialization of diamond-coated drills. In this paper, diamond thin films were deposited on the commercial WC-Co based drills by the electron aided hot filament chemical vapor deposition (EACVD). A new multiple coating technology based on changing gas pressure in different process stages was developed. The large triangular faceted diamond grains may have great contribution to the adhesive strength between the film and the substrate, and the overlapping ball like blocks consisted of nanometer sized diamond crystals may contribute much to the very low roughness of diamond film. Adhesive strength and quality of diamond film were evaluated by scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectrum and drilling experiments. The ring-block tribological experiments were also conducted and the results revealed that the friction coefficient increased with the surface roughness of the diamond film. From a practical viewpoint, the cutting performances of diamond-coated drills were studied by drilling the SiC particles reinforced aluminum-matrix composite. The good adhesive strength and low surface roughness of flute were proved to be beneficial to the good chip evacuation and the decrease of thrust and consequently led to a prolonged tool lift and an improved machining quality. The wear mechanism of diamond-coated drills is the abrasive mechanical attrition.

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Effect of Physical Control Technology on Aspergillus ochraceus Reduction (물리적 제어기술이 Aspergillus ochraceus 저감화에 미치는 영향)

  • Lee, Eun-Seon;Kim, Jong-Hui;Kim, Bu-Min;Oh, Mi-Hwa
    • Journal of Food Hygiene and Safety
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    • v.36 no.5
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    • pp.447-453
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    • 2021
  • In this study, the effectiveness of physical control technology, a combined light sterilization (LED, UV) and hot water treatment in reducing Aspergillus ochraceus for food production environment was investigated. In brief, 1 mL aliquot of A. ochraceus spore suspension (107-8 spore/mL) was inoculated onto stainless steel chips, which was then dried at 37℃, and each was subjected to different physical treatment. Treatments were performed for 0.5, 1, 2, 5, 8, and 11 hours to reduce the strains using a light-emitting diode, but no significant difference was confirmed among the treatments. However, a significant reduction was observed on the chips treated with UV-C exposure and hot water immersion. After being treated solely with 360 kJ/m2 of UV-C on stainless steel chip, the fungi were significantly reduced to 1.27 log CFU/cm2. Concerning the hot water treatment, the initial inoculum amount of 6.49 log CFU/cm2 was entirely killed by immersion in 83℃ water for 5 minutes. Maintaining a high temperature for 5 minutes at the site is difficult. Thus, considering economic feasibility and usability, we attempted to confirm the appropriate A. ochraceus reduction conditions by combining a relatively low temperature of 60℃ and UV rays. With the combined treatments, even in lukewarm water, A. ochraceus decreased significantly through the increases in the immersion time and the amount of UV-C irradiation, and the yield was below the detection limit. Based on these results, if work tools are immersed in 60℃ lukewarm water for 3 minutes and then placed in a UV sterilization device for more than 10 minutes, the possibility of A. ochraceus cross-contamination during work is expected to be reduced.

Spalling of Intermetallic Compound during the Reaction between Electroless Ni(P) and Lead-free Solders (무전해 Ni(P)과 무연솔더와의 반응 중 금속간화합물의 spalling 현상에 관한 연구)

  • Sohn Yoon-Chul;Yu Jin;Kang S. K.;Shih D. Y,;Lee Taek-Yeong
    • Journal of the Microelectronics and Packaging Society
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    • v.11 no.3 s.32
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    • pp.37-45
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    • 2004
  • Electroless Ni(P) has been widely used for under bump metallization (UBM) of flip chip and surface finish layer in microelectronic packaging because of its excellent solderability, corrosion resistance, uniformity, selective deposition without photo-lithography, and also good diffusion barrier. However, the brittle fracture at solder joints and the spatting of intermetallic compound (IMC) associated with electroless Ni(P) are critical issues for its successful applications. In the present study, the mechanism of IMC spatting and microstructure change of the Ni(P) film were investigated with varying P content in the Ni(P) film (4.6,9, and $13 wt.\%$P). A reaction between Sn penetrated through the channels among $Ni_3Sn_4$ IMCs and the P-rich layer ($Ni_3P$) of the Ni(P) film formed a $Ni_3SnP$ layer. Thickening of the $Ni_3SnP$ layer led to $Ni_3Sn_4$ spatting. After $Ni_3Sn_4$ spatting, the Ni(P) film directly contacted the molten solder and the $Ni_3P$ phase further transformed into a $Ni_2P$ phase. During the crystallization process, some cracks formed in the Ni(P) film to release tensile stress accumulated from volume shrinkage of the film.

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