• Korean Journal of Materials Research
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• v.20 no.7
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• pp.356-363
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• 2010

For this paper, we investigated the area specific resistance (ASR) of commercially available ferritic stainless steels with different chemical compositions for use as solid oxide fuel cells (SOFC) interconnect. After 430h of oxidation, the STS446M alloy demonstrated excellent oxidation resistance and low ASR, of approximately 40 $m{\Omega}cm^2$, of the thermally grown oxide scale, compared to those of other stainless steels. The reason for the low ASR is that the contact resistance between the Pt paste and the oxide scale is reduced due to the plate-like shape of the $Cr_2O_3$(s). However, the acceptable ASR level is considered to be below 100 $m{\Omega}cm^2$ after 40,000 h of use. To further improve the electrical conductivity of the thermally grown oxide on stainless steels, the Co layer was deposited on the stainless steel by means of an electroless deposition method; it was then thermally oxidized to obtain the $Co_3O_4$ layer, which is a highly conductive layer. With the increase of the Co coating thickness, the ASR value decreased. For Co deposited STS444 with 2 ${\mu}m$hickness, the measured ASR at $800^{\circ}$ after 300 h oxidation is around 10 $m{\Omega}cm^2$, which is lower than that of the STS446M, which alloy has a lower ASR value than that of the non-coated STS. The reason for this improved high temperature conductivity seems to be that the Mn is efficiently diffused into the coating layer, which diffusion formed the highly conductive (Mn,Co)$_3O_4$ spinel phases and the thickness of the $Cr_2O_3$(S), which is the rate controlling layer of the electrical conductivity in the SOFC environment and is very thin

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.6
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• pp.278-282
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• 2010

The doping effect of thulium on electrical properties and degradation behavior in barium titanate ceramics ($BaTiO_3$) was investigated in terms of generations of core-shell structure and micro-chemical changes through highly accelerated degradation test. The dielectric specimens of pellet type and multi-layered sheets were prepared by using $BaTiO_3$ with undoped and doped with 1 mol% $Tm_2O_3$. The $BaTiO_3$ ceramics doped with 1 mol% $Tm_2O_3$ had 40% higher dielectric constant (${\varepsilon}$ = 2700) than that of the undoped $BaTiO_3$ specimen at curie temperature and met X7R specification. According to the result of highly accelerated degradation test conducted at $150^{\circ}C$, 70 V, and 24 hr, the oxygen diffusion was declined in dielectrics doped with 1 mol% $Tm_2O_3$. The $Tm^{3+}$ ion substituted selectively Ba site and Ti site and contributed to the generation of the core-shell structure. Oxygen vacancies occurred by substitution for Ti site could reduce excess oxygen that reacted to the Ni electrode.

• Korean Journal of Ecology and Environment
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• v.34 no.4 s.96
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• pp.261-266
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• 2001

Effects of elevated carbon dioxide ($CO_2$) on soil microbial processes were studied in a northern peatland. Intact peat cores with surface vegetation were collected from a northern Welsh fen, and incubated either under elevated carbon dioxide (700 ppm) or ambient carbon dioxide (350 ppm) conditions for 4 months. Higher algal biomass was found under the elevated $CO_2$ condition, suggesting $CO_2$ fertilization effect on primary production, At the end of the incubation, trace gas production and consumption were analyzed using chemical inhibitors. For methane ($CH_4$ ), methyl fluoride ($CH_3F$) was applied to determine methane oxidation rates, while acetylene ($C_2H_2$) blocking method were applied to determine nitrification and denitrification rates. First, we have adopted those methods to optimize the reaction conditions for the wetland samples. Secondly, the methods were applied to the samples incubated under two levels of $CO_2$. The results exhibited that elevated carbon dioxide increased both methane production (210 vs. $100\;ng\;CH_4 g^{-1}\;hr^{-1}$) and oxidation (128 vs. $15\;ng\;CH_4 g^{-1}\;hr^{-1}$), resulting in no net increase in methane flux. For nitrous oxide ($N_2O$) , elevated carbon dioxide enhanced nitrous oxide emission probably from activation of nitrification process rather than denitrification rates. All of these changes seemed to be substantially influenced by higher oxygen diffusion from enhanced algal productivity under elevated $CO_2$.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.16 no.3
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• pp.95-100
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• 2006

Synthesis of the non-swelling property micas was carried out by hydrothermal method. In order to artificially induce the diffusion of ions, a rotating system was attached to the hydrothermal apparatus and by adding 0.7 mm zircon beads, synthesis of the non-swelling property micas could be performed in a low temperature area. The hydrothermal conditions for the preparation of micas were a reaction temperature of $260^{\circ}C$, for 72 hrs, using $1K_2O,\;1Al(OH)_3,\;4Mg(OH)_2\;and\;6SiO_2$ as the starting materials and a 8M-KOH solution as the hydrothermal solvent. The micas obtained under these conditions were a plate shape with a size of $2.89{\mu}m$ and showed a whiteness of over 97 %. Also, through the FT-IR analysis, because the absorption peak of the $Mg_3OH$ vibration was observed at approximately $3700cm^{-1}$, it could be known that it was phlogopite of non-swelling property showing the chemical composition of $KMg_3AlSi_3O_{10}(OH)_2$. This result was very consistent with the EDS analysis where O (41.34 %), Mg (3.88 %), Al (11.45 %), Si (17.62 %) and K (25.71%) elements were detected.

• Journal of the Korean Ceramic Society
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• v.42 no.2 s.273
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• pp.104-109
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• 2005

To study the role of PbO as the buffer layer, Pt/PZT/PbO/Si with the MFIS structure was deposited on the p-type (100) Si substrate by the r.f. magnetron sputtering with $Pb_{1.1}Zr_{0.53}Ti_{0.47}O_3$ and PbO targets. When PbO buffer layer was inserted between the PZT thin film and the Si substrate, the crystallization of the PZT thin films was considerably improved and the processing temperature was lowered. From the result of an X-ray Photoelectron Spectroscopy (XPS) depth profile result, we could confirm that the substrate temperature for the layer of PbO affects the chemical states of the interface between the PbO buffer layer and the Si substrate, which results in the inter-diffusion of Pb. The MFIS with the PbO buffer layer show the improved electric properties including the high memory window and low leakage current density. In particular, the maximum value of the memory window is 2.0V under the applied voltage of 9V for the Pt/PZT(200 nm, $400^{\circ}C)/PbO(80 nm)/Si$ structures with the PbO buffer layer deposited at the substrate temperature of $300^{\circ}C$.

• Journal of Advanced Marine Engineering and Technology
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• v.24 no.6
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• pp.61-69
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• 2000

Indium-Tin Oxide (ITO) films were prepared on the commercial glass substrate by the Magnetron Sputtering method. The target was a 90wt.% $In_2O_3$-10wt.% $SnO_2$with 99.99% purity. The ITO films deposited by changing the partial pressure of oxygen gas ($O_2$/(Ar+$O_2$)) of 2, 3 and 5% as well as by changing the substrate temperature of $300^{\circ}C$ or $500^{\circ}C$. The influence of substrate pre-annealing and pre-cleaning on the quality of ITO film were examined, in which the substrate temperature was $500^{\circ}C$ and oxygen partial pressure was 3%. The characteristics of films were examined by the 4-point probe, Hall effect measurement system, SEM, AFM, Spectrophotometer, and X-ray diffraction. The optimum ITO films have been obtained when the substrate temperature is $500^{\circ}C$ and oxygen partial pressure is 3%. At optimum condition, the film showed transmittance of 81%, sheet resistivity of $226\Omegatextrm{cm}^2$, resistivity($\rho$) of $5.4\times10^{-3}\Omega$cm, carrier concentration of $1.0\times10^{19}cm^{-3}$, and carrier mobility of $150textrm{cm}^2$Vsec. From XRD spectrum, c(222) plane was dominant in the case of substrate temperature at $300^{\circ}C$, without regarding to oxygen partial pressure. However, in the case of substrate temperature at $500^{\circ}C$, c(400) plane was grown together with c(222) plane, only for oxygen partial pressure of 2 and 3%. In both case of chemical and ultrasonic cleaning without pre-annealing the substrate, it showed much almost same sheet resistivity, resistivity($\rho$), transmittance, carrier concentration, and carrier mobility. In case of $500^{\circ}C$/60min pre-annealing before ITO film deposited, both transimittance and carrier mobility are better than no pre-annealing, because pre-annealing is supposed to remove alkari ions diffusion from substrate. ITO film deposited on the Corning 0080 sybstrate showed a little bit better sheet resistivity, resistivity($\rho$), transimittance, carrier concentration than the film deposited on commercial glass. But no differences between Corning substrate and pre-annealed commercial glass substrate are found.

• Journal of the Korea Organic Resources Recycling Association
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• v.7 no.2
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• pp.57-64
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• 1999

The purpose of this study is to establish effective conditions for controlling $CH_4$, $N_2O$ emission from organic Waste / wastewater treatment processes. Continuous and batch experiments were conducted to treat the micro algae from polluted and eutrophicated lakes through the thermophilic oxic process. The microalgae used were mainly Microcystis sp.(collected from eutrophic lake) and Chlorella sp. (cultured in laboratory) Wasted cooking oil was added by aid-heating source. Physico-chemical components of sludges and microalgae were analyzed. In batch experiments, air supply was changed from 50ml/min to 150ml/min. The temperature. water content and drained water were affected by the air flow rate at initial stage. However, there was almost no influence of air flow rate on them in middle and last stages. At air flow rate of 100ml/min, the degradation rate of organic material was higher than that at other air flow rates. $CO_2$ concentration in exhaust was proportional to the strength of aeration, especially at initial stage when degradation was active. $CH_4$ with low concentration was detected only at starting stage when air diffusion was not enough. $N_2O$ production was not affected by variation of air supply. In continuous experiments no matter what the dewatering methods (with PAC and without PAC) and media (wood chip and reed chip) were changed, $N_2O$ was almost not affected by variation of injected air. Result showed that the reed chips using for lake purification could be used as media for thermophilic oxic process in lake and marshes area. $CO_2$ concentration was not so much affected by the change of dewatering methods and media types. $CH_4$ was not detected in the experimental period. So it can be shown that the thermophilic oxic process had been well operated in wide handling conditions regardless of media and dewatering methods.

• Journal of Navigation and Port Research
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• v.34 no.10
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• pp.787-792
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• 2010

It is necessary to predict the penetration of chloride ions for designing RC construction in marine environments. However, it takes a long time to obtain chloride migration coefficients. Therefore, the rapid chloride penetration test (RCPT) is generally used to shorten the test time. But there is a difference between chloride migration coefficients determined by rapid chloride penetration tests and those based on exposure in marine environments. In this study, we evaluated the effect on the chloride ion migration coefficient caused by a change in voltage and NaCl concentration. We also compared the relationship between the chloride ion migration coefficient by RCPT and that by exposure in marine environments. As a result of the experiments, we found that there is only a small change in the experimental factors based on changes in voltage and NaCl concentration and since they are so small, we can conclude that they are in the range of experimental error and test results from chloride ion migration coefficients by RCPT and exposure were very different from each other. In the exposure experiments, when the water-cement ratio was increased, the smaller fine air gaps in concrete affected the chloride ion migration coefficient.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.162-162
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• 2010

InSb has received great attentions as a promising candidate for the active layer of infrared photodetectors due to the well matched band gap for the detection of $3{\sim}5\;{\mu}m$ infrared (IR) wavelength and high electron mobility (106 cm2/Vs at 77 K). In the fabrication of InSb photodetectors, passivation step to suppress dark currents is the key process and intensive studies were conducted to deposit the high quality passivation layers on InSb. Silicon dioxide (SiO2), silicon nitride (Si3N4) and anodic oxide have been investigated as passivation layers and SiO2 is generally used in recent InSb detector fabrication technology due to its better interface properties than other candidates. However, even in SiO2, indium oxide and antimony oxide formation at SiO2/InSb interface has been a critical problem and these oxides prevent the further improvement of interface properties. Also, the mechanisms for the formation of interface phases are still not fully understood. In this study, we report the quantitative analysis of indium and antimony oxide formation at SiO2/InSb interface during plasma enhanced chemical vapor deposition at various growth temperatures and subsequent heat treatments. 30 nm-thick SiO2 layers were deposited on InSb at 120, 160, 200, 240 and $300^{\circ}C$, and analyzed by X-ray photoelectron spectroscopy (XPS). With increasing deposition temperature, contents of indium and antimony oxides were also increased due to the enhanced diffusion. In addition, the sample deposited at $120^{\circ}C$ was annealed at $300^{\circ}C$ for 10 and 30 min and the contents of interfacial oxides were analyzed. Compared to as-grown samples, annealed sample showed lower contents of antimony oxide. This result implies that reduction process of antimony oxide to elemental antimony occurred at the interface more actively than as-grown samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.150.1-150.1
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• 2014

Showerhead is used as a main part in the semiconductor equipment. The face plate flatness should remain constant and the cleaning performance must be gained to keep the uniformity level of etching or deposition in chemical vapor deposition process. High operating temperature or long period of thermal loading could lead the showerhead to be deformed thermally. In some case, the thermal deformation appears very sensitive to showerhead performance. This paper describes the methods for robust design using computational fluid dynamics. To reveal the influence of the post distribution on flow pattern in the showerhead cavity, numerical simulation was performed for several post distributions. The flow structure appears similar to an impinging flow near a centered baffle in showerhead cavity. We took the structure as an index to estimate diffusion path. A robust design to reduce the thermal deformation of showerhead can be achieved using post number increase without ill effect on flow. To prevent the showerhead deformation by heat loading, its face plate thickness was determined additionally using numerical simulation. The face plate has thousands of impinging holes. The design key is to keep pressure drop distribution on the showerhead face plate with the holes. This study reads the methodology to apply to a showerhead hole design. A Hagen-Poiseuille equation gives the pressure drop in a fluid flowing through such hole. The assumptions of the equation are the fluid is viscous-incompressible and the flow is laminar fully developed in a through hole. An equation can be expressed with radius R and length L related to the volume flow rate Q from the Hagen-Poiseuille equation, $Q={\pi}R4{\Delta}p/8{\mu}L$, where ${\mu}$ is the viscosity and ${\Delta}p$ is the pressure drop. In present case, each hole has steps at both the inlet and the outlet, and the fluid appears compressible. So we simplify the equation as $Q=C(R,L){\Delta}p$. A series of performance curves for a through hole with geometric parameters were obtained using two-dimensional numerical simulation. We obtained a relation between the hole diameter and hole length from the test cases to determine hole diameter at fixed hole length. A numerical simulation has been performed as a tool for enhancing showerhead robust design from flow structure. Geometric parameters for the design were post distribution and face plate thickness. The reinforced showerhead has been installed and its effective deposition profile is being shown in factory.