• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• 한국진공학회지
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• 제9권3호
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• pp.233-236
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• 2000

TFT-LCD(thin film transistor-liquid crystal display) 패널의 데이터 배선 재료로 사용하기 위하여 AlW(3 wt%)의 Al합금 박막을 dc 마그네트론 스퍼터링 방법으로 유리 기판에 증착하여 열처리전과 열처리 후의 박막 특성을 조사하였다. 또한 TFT-LCD의 식각 공정상에서 발생할 수 있는 chemical attack에 대한 저항성을 확인하기 위하여 순환전압전류법(cyclic voltammetry)을 사용하여 Ag/AgCl 전극에 대한 ITO와 AlW alloy의 전극 전위를 측정하였다. 증착된 박막을 $350^{\circ}C$에서 20분간 열처리하였을 때 AlW 박막은 비저항이 감소하였고 약 $11\;{\mu\Omega}cm$의 다소 높은 비저항 특성을 보였다. 주사전자현미경(SEM)과 원자힘현미경(AFM)으로 표면을 분석한 결과 좋은 힐록방지 특성을 보임을 알 수 있었다. 순환전압전류법을 사용하여 측정한 Ag/AgCl 에 대한 ITO의 전극 전위은 약 -1.8V이었고, AlW alloy의 전위 전극은 W의 wt.%가 3% 이상이었을 때, ITO의 전극 전위보다 작게 나타났다. 따라서 측정된 특성 값을 볼 때 AlW(over 3 wt.%) 박막은 data bus line으로 사용할 수 있는 것으로 나타났다.

• Journal of Electrochemical Science and Technology
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• 제12권4호
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• pp.431-439
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• 2021

This research work aims to investigate the effect of the aerobic bacterium, Pseudomonas aeruginosa on the mechanical and electrochemical properties of the 316L stainless steel and α-brass. These properties of both the alloys were determined after 7 days of exposure to the controlled and inoculated media at 37℃. The microstructural and electrochemical test results revealed the deleterious effects of Pseudomonas aeruginosa. After exposure to the inoculated medium, the scanning electron microscopy (SEM) results showed the larger pitting and formation of relatively dense biofilm on α-brass compared to 316L stainless steel. The tensile strength and hardness of 316L stainless steel were slightly affected after exposure to the controlled and inoculated media. After exposure to the controlled medium and inoculated media, the tensile strength of the α-brass was least affected but a significant decrease in the hardness (from 165 HV to 124 HV) was observed due to the severe attack induced by the Pseudomonas aeruginosa. Similarly, the open-circuit potential of the 316L stainless steel in the inoculated medium was measured to be less active (-410 mV vs Ag/AgCl) than α-brass (-550 mV vs Ag/AgCl). In the inoculated medium, potentiodynamic polarization curves confirmed the severe attack of Pseudomonas aeruginosa on α-brass (7.15 × 10^-2 mm/year) compared to 316L stainless steel which registered a corrosion rate of 5.14 × 10^-4 mm/year.

• Bulletin of the Korean Chemical Society
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• 제33권3호
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• pp.775-778
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• 2012

The potential energy surfaces of ammonia molecule adsorptions on the symmetrically chlorinated Si(100)-$2{\times}1$ surface were explored with SIMOMM:MP2/6-31G(d). It was found that the initial nucleophilic attack by ammonia nitrogen to the surface Si forms a $S_N2$ type transition state, which eventually leads to an HCl molecular desorption. The second ammonia molecule adsorption requires much less reaction barrier, which can be rationalized by the surface cooperative effect. In general, it was shown that the surface Si-Cl bonds can be easily subjected to the substitution reactions by ammonia molecules yielding symmetric surface Si-$NH_2$ bonds, which can be a good initial template for subsequent surface chemical modifications. The ammonia adsorptions are in general more facile than the corresponding water adsorption, since ammonia is better nucleophile.

• The Korean Journal of Ceramics
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• 제1권3호
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• pp.160-164
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• 1995

Mechanical and chemical tests were performed on $Zro_2 \cdot SiO_2$ glass fibers manufactured by the sol-gel method and E-glass fibers-reinforced cement composites in order to investigate the interactions between glass fibers and cement matrices. Chemical attack leads to corrosion of the glass fiber surfaces. In the corrosion reactions, the surface of $30ZrO_2 \cdot 70 SiO_2$ glass fibers developed a densified concentric layer, which consists of glass corrosion products with much higher Zr and lower Si than the fresh glass fiber. The layer of reaction product is regarded to stiffen the cement matrices and provide a useful improvement to the mechanical properties. The addition of $ZrO_2$ content increases the corrosion resistance of glass fibers in cement by forming a passivating layer on the surface of glass fibers.

• 한국재난정보학회 논문집
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• 제6권2호
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• pp.21-44
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• 2010

Today, in response to chemical, biological and radiological terrorism has been active for the study. However, if chemical, biological and radiological attack has occurred to respond to the agency has not conducted the research. The purpose of this study are as follows. First, South Korea and the United States 'CBR terrorism' comparative analysis of the response system. Second, South Korea 'CBR terrorism' measures to improve the system response is presented. To achieve the purpose of this study, the following research is carried out. First, determine the status of the case of CBR incident. Second, the United States 'CBR terrorism' response systems and organizational approaches. Third, Korea's 'CBR terrorism' response system and the problem is derived.

• Bulletin of the Korean Chemical Society
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• 제30권10호
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• pp.2294-2298
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• 2009

In present work an attempt was made to synthesize various analogues of levofloxacin by introducing new functionality at carboxylic group position via nucleophilic substitution reaction. For this purpose the carboxylic group at C-6 was esterified and later subjected to nucleophilic attack at the carbonyl carbon by various aromatic amines. Structure of the analogues was confirmed by different techniques i.e. IR, $^1H$ NMR and mass spectrometry. The antibacterial activity of the derivatives was also assessed and compared with the parent against a series of Gram-positive and Gramnegative bacteria. A synergistic as well as antagonistic behavior was observed in these derivatives. Additionally unlike levofloxacin, the derivatives were also found to modulate oxidative burst response of phagocytes exhibiting moderate to significant inhibitory activity.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2000년도 제18회 학술발표회 논문개요집
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• pp.58-58
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• 2000

Recently low resistance of bus line is required for large screen size RFT-CLD panels. As a result, lower resistance Al-alloy is currently reviewed extensively. The resistivity is required smaller than 10$\mu$$\Omega$cm and high resistance of chemical attack is required. In this paper, Al-W thin film were deposited on glass substrates by D.C magnetron sputtering system under various condition for high chemical resistance. Its properties were characterized by SEM, AFM, XRD, 4-point-probe, and cyclic voltammertry. The optimal condition of Al-W was 10$0^{\circ}C$, 100W, 0.4Pa, 23sccm(Ar) and 35$0^{\circ}C$, 20min. annealing. At that condition the resistivity of Al-W(3 wt.%) was about 11$\mu$$\Omega$cm. And when wt.% of W in Al-W alloy was higher than about 4%, Al-W alloy thin film has high chemical resistance.

• Bulletin of the Korean Chemical Society
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• 제11권1호
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• pp.60-64
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• 1990

The reactions of alkanesulfonyl chlorides with pyridines in the presence of various solvents have been studied by means of kinetic method. Alkanesulfonyl chlorides bearing ${\alpha}$-hydrogen with the normal attack of pyridine is found to be at the ${\alpha}$-hydrogen with elimination to form the sulfene intermediate evidently. From the mass spectra by the reaction of ethanesulfonyl chloride with 3-picoline in the presence of methanol-$d_1$, it has shown that the reaction has a witness favorable to the slulfene intermediate.

• Bulletin of the Korean Chemical Society
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• 제5권1호
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• pp.32-37
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• 1984

The photoreaction of 2, 3-benzo-1, 1-diphenyl (or dimethyl)-1-sila-2-cyclobutene (9 or 10) with an aldehyde or ketone results in 1:1 cycloadduct of [4 + 2] type. In the reactions of 2, 3-benzo-1, 1-dimethyl-1-sila-2-cyclobutene (10) with acetone and butanone, another 1:1 adducts (13) were also formed, respectively. The following facts indicate that the formation of adduct involves an attack of a triplet carbonyl compound on the silicon of the benzosilacyclobutene, an $S_H2$ process. (1) Even when the reaction of 9 with acetophenone was carried out under conditions such that more than 99% of incident light was absorbed only by acetophenone using the filter solution of aq. cupric sulfate, the same adduct was still formed. (2) When the reaction of 9 with acetone was carried out under oxygen atmosphere, only trace amount of adduct was formed.