• Clean Technology
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• v.24 no.4
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• pp.332-338
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• 2018

Currently graphite is used as an anode active material for lithium ion battery. However, since the maximum theoretical capacity of graphite is limited to $372mA\;h\;g^{-1}$, a new anode active material is required for the development of next generation high capacity and high energy density lithium ion battery. The maximum theoretical capacity of Si is $4200mA\;h\;g^{-1}$, which is about 10 times higher than the maximum theoretical capacity of graphite. However, since the volume expansion rate is almost 400%, the irreversible capacity increases as the cycle progresses and the discharge capacity relative to the charge is remarkably reduced. In order to solve these problems, it is possible to control the particle size of the Si anode active material to reduce the mechanical stress and the volume change of the reaction phase, thereby improving the cycle characteristics. Therefore, in order to minimize the decrease of the charge / discharge capacity according to the volume expansion rate of the Si particles, the improvement of the cycle characteristics was carried out by pulverizing Si by a dry method with excellent processing time and cost. In this paper, Si is controlled to nano size using vibrating mill and the physicochemical and electrochemical characteristics of the material are measured according to experimental variables.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.16-23
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• 1997

Bismuth germanate crystals well known as scintillator were grown by Czochralski method. In order to understand a mechanism of radiation resistance in Eu-doped BGO, we measured radiation induced-absorption spectra, excitation spectra, emission spectra and luminescence lifetimes of BGO crystals. We found that the charge transfer state of $Eu^{3+}$ ion is to play a key role to enhance the radiation resistance in BGO crystal. The $^{5}D_{0}$ emission of $Eu^{3+}$ ions that is not suitable for the radiation detectors due to a long decay time was found to be increased with increasing europium concentration. In the BGO crystal doped with 0.1 mole%, the density of radiation induced color centers was reduced about twenty times and the light output of $^{5}D_{0}$ was negligible by comparing to that of BGO.

• Journal of the Korean Chemical Society
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• v.30 no.5
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• pp.488-492
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• 1986

The $Ca^{++}$ and $Mg^{++}$ released during Ca, Mg-Na exchange on Kampo 78 montmorillonite which was treated with various concentrations of NaCl solution, were measured with EDTA titration metbod in the leaching solutions. Lanthanide montmorillonite was prepared with various neutral lanthanide ions from sodium montmorillonite in which the exchangeable ions are displaced from the exchanger, such as the displacement of $Na^+$ by $Ln^{3+}$ ions, Cation exchange capacity (CEC) is determined on remaining lanthanides in the leaching solutions with E. D. T. A titration method. As a results of this study, there were no difference of C. E. C in series of lanthanide contraction, but C. E. C depends on charge density of montmorillonite. When we conformed the structure of Ln-montmorillonite by X-ray diffraction. It was found that there was much difference of pattern between Na-montmorillonite and Ln-montmorillonite.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.392.1-392.1
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• 2016

Nowadays, research interest in developing the wearable devices are growing remarkably. Portable consumer electronic systems are becoming lightweight, flexible and even wearable. In fact, wearable electronics require energy storage device with thin, foldable, stretchable and conformable properties. Accordingly, developing the flexible energy storage devices with desirable abilities has become the main focus of research area. Among various energy storage devices, supercapacitors have been considered as an attractive next generation energy storage device owing to their advantageous properties of high power density, rapid charge-discharge rate, long-cycle life and high safety. The energy being stored in pseudocapacitors is relatively higher compared to the electrochemical double-layer capacitors, which is due to the continuous redox reactions generated in the electrode materials of pseudocapacitors. Generally, transition metal oxides/hydroxide (such as $Co_3O_4$, $Ni(OH)_2$, $NiFe_2O_4$, $MnO_2$, $CoWO_4$, $NiWO_4$, etc.) with controlled nanostructures (NSs) are used as electrode materials to improve energy storage properties in pseudocapacitors. Therefore, different growth methods have been used to synthesize these NSs. Of various growth methods, electrochemical deposition is considered to be a simple and low-cost method to facilely integrate the various NSs on conductive electrodes. Herein, we synthesized amorphous $NiWO_4$ NSs on cost-effective conductive textiles by a facile electrochemical deposition. The as-grown amorphous $NiWO_4$ NSs served as a flexible and efficient electrode for energy storage applications.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.326-330
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• 2010

$CoSb_3$ Skutterudites materials have high potential for thermoelectric application at mid-temperature range because of their superior thermoelectric properties via control of charge carrier density and substitution of foreign atoms. Improvement of thermoelectric properties is expected for the ternary solid solution developed by substitution of foreign atoms having different valances into the $CoSb_3$ matrix. In this study, ternary solid solutions with a stoichiometry of $Co_{1-x}Ni_xSb_3$ x = 0.01, 0.05, 0.1, 0.2, $CoSb_{3-y}Te_y$, y = 0.1, 0.2, 0.3 were prepared by the Spark Plasma Sintering (SPS) system. Before the SPS synthesis, the ingots were synthesized by vacuum induction melting and followed by annealing. For phase analysis X-ray powder diffraction patterns were checked. All the samples were confirmed as single phase; however, with samples that were more doped than the solubility limit some secondary phases were detected. All the samples doped with Ni and Te atoms showed a negative Seebeck coefficient and their electrical conductivities increased with the doping amount up to the solubility limit. For the samples prepared by SPS the maximum value for dimensionless figure of merit reached 0.26, 0.42 for $Co_{0.9}Ni_{0.1}Sb_3$, $CoSb_{2.8}Te_{0.2}$ at 690 K, respectively. These results show that the SPS method is effective in this system and Ni/Te dopants are also effective for increasing thermoelectric properties of this system.

• Membrane and Water Treatment
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• v.6 no.2
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• pp.127-139
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• 2015

Rejection of ionic solutes by reverse osmosis (RO) and nanofiltration (NF) membranes is controlled mainly by electrochemical interaction as well as pore size, but it is very difficult to directly evaluate such electrochemical interaction. In this work, we used an inverse HPLC method to investigate the interaction between ionic solutes and poly (m- phenylenediaminetrimesoyl) (PPT), a polymer similar to the skin layer of polyamide RO and NF membranes. Silica gel particles coated with PPT were used as the stationary phase, and aqueous solutions of the ionic solutes were used as the mobile phase. Chromatographs obtained for the ionic solutes showed features typical of exclusion chromatographs: the ionic solutes were eluted faster than water (mobile phase), and the exclusion intensity of the ionic solute decreased with increasing solute concentration, asymptotically approaching a minimum value. The charge density of PPT was estimated to be ca. 0.007 mol/L. On the basis of minimum exclusion intensity, the exclusion distances between a salt and neutralized PPT was examined, and the following average values were obtained: 0.49 nm for 1:1 salts, 0.57 nm for 2:1 salts, 0.60 nm for 1:2 salts, and 0.66 nm for 2:2 salts. However, $NaAsO_2$ and $H_3BO_3$, which are dissolved at neutral pH in their undissociated forms, were not excluded.

• Proceedings of the KIEE Conference
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• 1998.07d
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• pp.1373-1376
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/TPD/$Eu(TTA)_3(phen)/Alq_3/Al$ structures were fabricated by evaporation method, where aromatic diamine(TPD) were used as a hole transporting material, $Eu(TTA)_3(phen)$ as an emitting material, and tris(8-hydroxyquinoline)Aluminum ($Alq_3$) as an electron transporting layer. Electroluminescent(EL) and I-V characteristics of $Eu(TTA)_3(phen)$ with a variety thickness was investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of $Eu(TTA)_3(phen)$. I-V characteristics of this structure show that turn-on voltage was 9V and current density of $0.01A/cm^2$ at a dc drive voltage of 9V. Details on the explanation of electrical transport phenomena of these structures with I-V characteristics using the trapped-charge-limited current model will be discussed.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.10
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• pp.83-90
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• 1998

The effects of dopant activation anneal on GOI (Gate Oxide Integrity) of MOS capacitor with amorphous silicon gate electrode were investigated. It was found that the amorphous silicon gate electrode was crystallized and the dopant atoms were sufficiently activated by activation anneal. The mechanical stress of gate electrode that reveals large compressive stress in amorphous state, was released with increase of anneal temperature from $700^{\circ}C$ to 90$0^{\circ}C$. The resistivity of gate electrode polycrystalline silicon film is decreased by the increase of anneal temperature. The reliability of thin gate oxide and interface properties between oxide and silicon substrate greatly depends on the activation anneal temperature. The charge trapping characteristics as well as oxide reliability are improved by the anneal of 90$0^{\circ}C$ compare to that of $700^{\circ}C$ or 80$0^{\circ}C$. Especially, the lifetimes of the thin gate oxide estimated by TDDB method is 3$\times$10$^{10}$ for the case of $700^{\circ}C$ anneal, is significantly increased to 2$\times$10$^{12}$ for the case of 90$0^{\circ}C$ anneal. Finally, the interface trap density is reduced with relaxation of mechanical stress of gate electrode.

• Applied Chemistry for Engineering
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• v.5 no.1
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• pp.44-53
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• 1994

A study on the iron electrode which is a good material for alkaline battery because of its superior characteristics including high theoretical capacity density, low toxicity, low cost and inexhaustible supply was performed to develop high performance nickel-iron secondary battery. The characteristics of chrage-discharge reaction were examined by cyclic voltammetry technique SEM and XRD analysis. The capacity of the test electrodes was determined by the costant current charge-discharge method. It was found that the purity and particle size of iron material were the major determinant factors of electrode capacity. With the addition of $Na_2S$ into the electrolyte the capacity of electrode was increased about 20 % caused by the prevention of passivation and the increase of hydrogen overpotential. The stability and capacity of electrode were increased with the use of Ni-fibrex and foamed Ni collectors and also depended on the sintering temperature. The capacity of electrode was 350 mAh/g(0.2 C) which corresponded to 36% utility.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2013.05a
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• pp.726-728
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• 2013

Optoelectronic arc discharge sensor was used to detect arc discharge inside power distribution panel. Arc discharge is fatal to power system once it begins, thus preventive detection is necessary before power failure occurs. Optoelectronic detection method was used to avoid direct electrical contact to power apparatus inside power distribution panel. 180 degree detection angle and detection range far exceeding 6m, which was sufficient for monitoring purpose, was achieved using the photodiode having $7.5mm^2$ of active surface area and flash source with $0.4cal/cm^2$ energy density, which is equivalent to 1.9J with $2.16cm^2$ emitting area. The response speed of arc discharge sensor was measured to be below 1 msec. The above optoelectronic arc discharge sensor was measured to be sensitive enough to detect 0.94 pC charge.