• Journal of Adhesion and Interface
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• v.20 no.4
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• pp.155-161
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• 2019

Understanding charge transport anisotropy at the interface of conjugated nanostructures basically gives insight into structure-property relationship in organic field-effect transistors (OFET). Here, the anisotropy of the field-effect mobility at the interface between 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) single crystal with cofacial molecular stacks in a-b basal plane and SiO gate dielectric was investigated. A solvent exchange method has been used in order for TIPS-pentacene single crystals to be grown on the surface of SiO₂ thin film, corresponding to the charge accumulation at the interface in OFET structure. In TIPS-pentacene OFET, the anisotropy ratio between the highest and lowest measured mobility is revealed to be 5.2. By analyzing the interaction of a conjugated unit in TIPS-pentacene with the nearest neighbor units, the mobility anisotropy can be rationalized by differences in HOMO-level coupling and hopping routes of charge carriers. The theoretical estimation of anisotropy based on HOMO-level coupling is also consistent with the experimental result.

• Journal of IKEEE
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• v.27 no.1
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• pp.30-37
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• 2023

To improve the efficiency and stability of colloidal quantum dot light-emitting diodes (QD-LEDs), it is essential to achieve charge balance within the QD emissive layer. Zinc oxide (ZnO) is widely used for constructing an electron transport layer in the state-of-the-art QD-LEDs, but spontaneous electron injection from ZnO often results in excessive electrons in QDs that significantly deteriorate the performance of QD-LEDs. In this study, we demonstrated the improved performance of QD-LEDs by modifying the electron injection property of ZnO with self-assembled monolayer (SAM)-treatment. As a result of improved charge balance, the external quantum efficiency and maximum luminance of QD-LEDs with SAM-treatment were improved by 25% and 200%, respectively, compared to the devices without SAM-treatment.

• Korean Journal of Materials Research
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• v.23 no.8
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• pp.430-434
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• 2013

Quantum dots(QDs) with their tunable luminescence properties are uniquely suited for use as lumophores in light emitting device. We investigate the microstructural effect on the electroluminescence(EL). Here we report the use of inorganic semiconductors as robust charge transport layers, and demonstrate devices with light emission. We chose mechanically smooth and compositionally amorphous films to prevent electrical shorts. We grew semiconducting oxide films with low free-carrier concentrations to minimize quenching of the QD EL. The hole transport layer(HTL) and electron transport layer(ETL) were chosen to have carrier concentrations and energy-band offsets similar to the QDs so that electron and hole injection into the QD layer was balanced. For the ETL and the HTL, we selected a 40-nm-thick $ZnSnO_x$ with a resistivity of $10{\Omega}{\cdot}cm$, which show bright and uniform emission at a 10 V applied bias. Light emitting uniformity was improved by reducing the rpm of QD spin coating.At a QD concentration of 15.0 mg/mL, we observed bright and uniform electroluminescence at a 12 V applied bias. The significant decrease in QD luminescence can be attributed to the non-uniform QD layers. This suggests that we should control the interface between QD layers and charge transport layers to improve the electroluminescence.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.128.1-128.1
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• 2013

We investigated the correlation between electrical transport and mechanical stress in $Bi_2Te_2Se$ by using a conductive probe atomic force microscopy in an ultra-high vacuum environment. Uniform distribution of measured friction and current were observed over a single quintuple layer terrace, which is an indication of the uniform chemical composition of the surface. By measuring the charge transport of $Bi_2Te_2Se$ surface as a function of the load applied by a tip to the sample, we found that the current density varies with applied load. The variation of current density was explained in light of the combined effect of the changes in the in-plane conductance and spin-orbit coupling that were theoretically predicted. We suppose that the local density of states is modified by tip-induced strain, but topological phase still remains. We exposed a clean topological insulator surface by tip-induced indentation. The surface conductance on the indented $Bi_2Te_2Se$ surface was studied, and the role of surface oxide on the surface conductance is discussed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.2
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• pp.91-95
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• 2017

We were designed the hole transport layer of the new composite skeleton structure having a high charge mobility and thermal stability. In this paper, a hole transport layer material based on thiophene molecular structure capable of hole mobility characteristics and high triplet energy was designed and synthesized. The structures and properties of the synthesized compounds were characterized by NMR, fluorescence spectroscopy and energy band gap. As a result of NMR measurement, it was confirmed that when analyzing the integrated type with the position where the measured peak is displayed, it agrees with the structure of hole transport materials. The emission characteristics of the hole transport layer material showed absorption characteristics at 412 nm and 426 nm, respectively, and exhibited emission characteristics in the range of 469 nm and 516 nm.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.4
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• pp.467-472
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• 2012

In this paper, we present a finite element method (FEM) study on the space charge effects in organic light emitting diodes. The physical model covers all the key physical processes in OLEDs, namely charge injection, transport and recombination, exciton diffusion, transfer and decay as well as light coupling, and thin-film-optics. The exciton model includes generation, diffusion, and energy transfer as well as annihilation. We assumed that the light emission originates from oscillation which thus is embodied as exciton in a stack of multilayer. We discuss the accumulation of charges at internal interfaces and their signature in the transient response as well as the electric field distribution. We also report our investigation on the influence of the insertion of the emission layer (EML) in the bilayer structure.

• Advances in nano research
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• v.3 no.1
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• pp.49-54
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• 2015

The structure represents symmetrical metal electrode (gate 1) - front $SiO_2$ layer - n-Si nanowire FET - buried $SiO_2$ layer - metal electrode (gate 2). At the symmetrical gate voltages high conductive regions near the gate 1 - front $SiO_2$ and gate 2 - buried $SiO_2$ interfaces correspondingly, and low conductive region in the central region of the NW are formed. Possibilities of applications of nanosize FETs at the deep inversion and depletion as a distributed capacitance are demonstrated. Capacity density is an order to ${\sim}{\mu}F/cm^2$. The charge density, it distribution and capacity value in the nanowire can be controlled by a small changes in the gate voltages. at the non-symmetrical gate voltages high conductive regions will move to corresponding interfaces and low conductive region will modulate non-symmetrically. In this case source-drain current of the FET will redistributed and change current way. This gives opportunity to investigate surface and bulk transport processes in the nanosize inversion channel.

• Proceedings of the KIEE Conference
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• 2001.11b
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• pp.192-194
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• 2001

The Transmission network provides physical transport, network security, and connection services. The five principles of Transmission pricing are economic efficiency, cost recovery, efficient regulation, simplicity and transparency, non-discrimination. The Transmission Charges are made up of transmission connection charge and transmission charge of network. The Transmission Losses will be considered through Marginal Transmission Loss Factors in the market operation. The transmission loss rentals are used for the reduction of the annual revenue requirement of the transmission network for the purpose of derivation of transmission use of network charge.

• Journal of Magnetics
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• v.8 no.2
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• pp.85-88
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• 2003

The magnetic and transport properties far single crystals of Ru-doped mono-layered manganites $La_{0.5}Sr_{1.5}-Mn_{1-x}Ru_xO_4$ (0$\leq$$\chi$$\leq$0.1) have been studied using neutron diffraction and magnetization measurements. Temperature dependent magnetization data reveal that with an increase in the Ru concentration the parent charge ordered antiferromagnetic state is gradually destroyed and new ferromagnetic phase evolves. In the low Ru-doped system spin glass behavior is apparent in low temperature region, which is confirmed by ac and do magnetization measurements. The competing magnetic interaction between Mn/Mn and Mn/Ru couples is the most likely cause of the spin glass transition.

• Proceedings of the Materials Research Society of Korea Conference
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• 2008.11a
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• pp.31.1-31.1
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• 2008