• Title/Summary/Keyword: charge effect

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Specimen Preparation for Scanning Electron Microscope Using a Converted Sample Stage

  • Kim, Hyelan;Kim, Hyo-Sik;Yu, Seungmin;Bae, Tae-Sung
    • Applied Microscopy
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    • v.45 no.4
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    • pp.214-217
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    • 2015
  • This study introduces metal coating as an effective sample preparation method to remove charge-up caused by the shadow effect during field emission scanning electron microscope (FE-SEM) analysis of dynamic structured samples. During a FE-SEM analysis, charge-up occurs when the primary electrons (input electrons) that scan the specimens are not equal to the output electrons (secondary electrons, backscattered electrons, auger electrons, etc.) generated from the specimens. To remove charge-up, a metal layer of Pt, Au or Pd is applied on the surface of the sample. However, in some cases, charge-up still occurs due to the shadow effect. This study developed a coating method that effectively removes charge-up. By creating a converted sample stage capable of simultaneous tilt and rotation, the shadow effect was successfully removed, and image data without charge-up were obtained.

Latent Charge Erasing Technique for a-Se Digital X-ray Detector (비정질 셀레늄 디지털 X선 검출기에 대한 잔류 전하 제거 기술)

  • Kang, S.S.;Choi, J.Y.;Park, J.K.;Cho, J.W.;Moon, C.W.;Choi, H.K.;Nam, S.H.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11b
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    • pp.505-508
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    • 2001
  • Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.5 %, and the removal effect of latent charge by using light erase method was its 95.5 %.

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Latent Charge Erasing Technique for a-Se Digital X-ray Detector (비정질 셀레늄 디지털 X선 검출기에 대한 잔류 전하 제거 기술)

  • 강상식;최장용;박지군;조진욱;문치웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2001.11a
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    • pp.505-508
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    • 2001
  • Currently there is much interested in removing latent charge that is caused to latent image effect and blurring of obtained image as well as reduction of x-ray conversion efficiency in digital radiography system. To remove latent charge a-Se film is irradiated by light with 3500 lux using halogen lamp and optical fiber. We measured dark current and photosensitivity to analyze removing effect of latent charge, then compared with and without light erasing method. The reduction of measured signal due to latent charge effect was 32.3%, and the removal effect of latent charge by using light erase method was its 95.5%.

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Gate All Around Metal Oxide Field Transistor: Surface Potential Calculation Method including Doping and Interface Trap Charge and the Effect of Interface Trap Charge on Subthreshold Slope

  • Najam, Faraz;Kim, Sangsig;Yu, Yun Seop
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.5
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    • pp.530-537
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    • 2013
  • An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

A New Analog Switch CMOS Charge Pump Circuit without Body Effect

  • Parnklang, Jirawath;Manusphrom, Ampual;Laowanichpong, Nut;Tongnoi, Narongchai
    • 제어로봇시스템학회:학술대회논문집
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    • 2005.06a
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    • pp.212-214
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    • 2005
  • The charge-pump circuit which is used to generate higher voltage than the available supply voltage has wide applications such as the flash memory of EEPROM Because the demand for high voltage comes from physical mechanism such as the oxide tunneling, the required pumped voltage cannot be scaled as the power supply voltage is scaled. Therefore, an efficient charge-pump circuit that can achieve high voltage from the available low supply voltage is essential. A new Analog Switch p-well CMOS charge pump circuit without the MOS device body effect is processed. By improve the structure of the circuit's transistors to reduce the threshold voltage shift of the devices, the threshold voltage of the device is kept constant. So, the circuit electrical characteristics are higher output voltage within a shorter time than the conventional charge pump. The propose analog switch CMOS charge pump shows compatible performance of the ideal diode or Dickson charge pump.

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A Theoretical Evaluation of the Effect of Refrigerant Charge on the Performance of Vapor-Compression Air-Conditioning System (증기압축식 에어컨의 냉매 충전량에 따른 성능 예측)

  • 이경중;방광현
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.12 no.5
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    • pp.486-493
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    • 2000
  • A theoretical model for the transient performance of vapor-compression air-conditioning system has been developed to evaluate the influence of the refrigerant charge on the system performance. A set of mass and energy equations for the simulation of the heat exchangers and the capillary tube and a polytropic compression model for the compressor are used. The present model successfully predicts the transient behavior of the vapor-compression air-conditioner from the startup. As the refrigerant charge is increased, both the evaporating and condensing pressures increase gradually, and the cooling rate and the COP show a maximum in the range of 0.75-0.8 kg of refrigerant charge. This amount of refrigerant mass is determined to be the optimum charge of the model system. Also, the effect of outdoor air temperature on the optimum refrigerant charge is discussed.

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The Effect of the Intake Flow on the Spray Structure of a High Pressure 11-Hole Fuel Injector in a DISI Engine (직접분사식 가솔린 기관에서 흡입유동이 고압 11공 연료분사기의 분무형상에 미치는 영향)

  • Kim, Seong-Soo
    • Transactions of the Korean Society of Mechanical Engineers B
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    • v.33 no.9
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    • pp.722-727
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    • 2009
  • The effect of the intake flow on the spray structure of a high pressure 11-hole fuel injector were examined in a single cylinder optical direct injection spark ignition (DISI) engine. The effects of injection timing and in-cylinder charge motion were investigated using the 2-dimensional Mie scattering technique. It was confirmed that in the homogeneous charge mode, the in-cylinder swirl charge motion played a major role in the fuel spray distribution during the induction stroke rather than the tumble flow. But, in the stratified charge mode, the effect of the in-cylinder charge was not so large that the injected spray pattern was nearly maintained and the increase of in-cylinder pressure by the upward moving piston reduced the fuel spray penetration.

Irreversible Charge Trapping at the Semiconductor/Polymer Interface of Organic Field-Effect Transistors (유기전계효과 트랜지스터의 반도체/고분자절연체 계면에 발생하는 비가역적 전하트래핑에 관한 연구)

  • Im, Jaemin;Choi, Hyun Ho
    • Journal of Adhesion and Interface
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    • v.21 no.4
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    • pp.129-134
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    • 2020
  • Understanding charge trapping at the interface between conjugated semiconductor and polymer dielectric basically gives insight into the development of long-term stable organic field-effect transistors (OFET). Here, the charge transport properties of OFETs using polymer dielectric with various molecular weights (MWs) have been investigated. The conjugated semiconductor, pentacene exhibited morphology and crystallinity, insensitive to MWs of polymethyl methacrylate (PMMA) dielectric. Consequently, transfer curves and field-effect mobilities of as-prepared devices are independent of MWs. Under bias stress in humid environment, however, the drain current decay as well as transfer curve shift are found to increase as the MW of PMMA decreases (MW effect). The charge trapping induced by MW effect is irreversible, that is, the localized charges are difficult to be delocalized. The MW effect is caused by the variation in the density of polymer chain ends in the PMMA: the free volumes at the PMMA chain ends act as charge trap sites, corresponding to drain current decay depending on MWs of PMMA.

Bleaching of Hardwood Kraft Pulp by Xylanase Pretreatment

  • Cho, Nam-Seok
    • Journal of the Korean Wood Science and Technology
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    • v.27 no.4
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    • pp.65-71
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    • 1999
  • This study was carried out to investigate the effect of xylanase pretreatment of the unbleached hardwood kraft pulp during the conventional Chlorine-Extraction- Hypochlorite (CEH) bleaching on pulp property. Optimum bleaching condition was evaluated by using Novozym produced from the fungus Humicola insolens. Also the effect of chelating agent prior to enzyme treatment was analyzed. The kappa number of enzymatic bleached pulp at the enzyme charge 10 IU/ml was slightly similar to that of bleached pulp without enzyme. By enzyme treatment, the chlorine charge in conventional CEH bleaching process of hardwood KP could be reduced by 17%, while no adverse effect on pulp yield and strength was. The optimum condition for enzyme pretreatment was 10 IU/ml xylanase charge, 3 to 4 hrs treatment, and 2% pulp consistency. In sugar composition in the enzyme pretreated pulp, arabinose and mannose were not much different, but more xylose was retained. This high content of hemicellulose in pulp seems to play an important role in pulp properties. The pulp pretreatment by chelating agent prior to enzyme treatment could improve the enzyme activity and enhance the bleaching effect at 0.2% diethylenetriamine pentaacetic acid (DTPA) charges.

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The Effect of Space Charge on the PD Pattern and Dielectric Barrier Discharge under AC (교류전압에서 PD 패턴 및 유전체 장벽 방전에 미치는 공간전하의 영향)

  • Gwon, Yun-Hyeok;Hwang, Bo-Seung;Lee, Dong-Yeong;Han, Min-Gu
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.49 no.4
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    • pp.226-231
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    • 2000
  • In this paper, we present new method to analyze the space charge effect on the electrical characteristics in polymer. It is new measurement system and analysis method that have not reported yet. By using this measurement system, we make observation to space charge accumulated on the surface of polymer at AC voltage, so it is examined to verify the correlation of space charge and partial discharge(PD). In the result of experiment, it can be known that PD pattern is related more closely to space charge accumulated on the surface of polymer than in the inner part, and applied voltage in the air is ruled by this dynamic partial discharge. Also, above critical voltage, the space charge accumulated on the surface of polymer have no effect to the magnitude of PD and the applied voltage in the air. It has been known that the electric power of the dissolution system is proportioned to the frequency and the magnitude of applied voltage, but we can know by this result of the experiment that the efficiency of the dissolution is not related to the rise of voltage above critical voltage.

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