• 전기화학회지
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• 제19권3호
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• pp.114-121
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• 2016

본 연구에서는 리튬이온전지의 충방전시 발생하는 발열특성을 CFD 모델링하고, 발열에 따른 충방전 특성을 해석하였다. 리튬이온전지는 직교 파우치형 구조로서 두께방향으로의 1차원계로 설정하여, 전류밀도 방정식, 열 및 물질전달 지배방정식을 도입하였다. Cut-off 전압이 3 V에서 충방전 전류밀도가 1C($17.5A/m^2$), 3C($52.5A/m^2$) 와 5C($87.5A/m^2$)에 대하여, 298K의 등온계와 충방전 전류밀도 별 발열계로 각각 설정하였다. 등온계와 발열계에서 모두 충방전 전류밀도가 높을수록 전지의 용량은 감소되는 것으로 나타났다. 등온계에 비하여 발열계에서 충방전 시간이 증가하였으며, 이는 발열에 의한 온도의 증가로 인해 전극의 평형전위가 감소하고, 리튬이온의 확산계수가 증가하기 때문인 것으로 고려된다. 또한, 리튬이온전지의 충전과 방전에 의한 열 발생 영향을 제어하기 위한 냉각효과를 분석하였다.

• Journal of Mechanical Science and Technology
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• 제18권4호
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• pp.640-648
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• 2004

This paper describes a new magnetization method for non-destructive testing with magneto-optical sensor (denoted as MO sensor) which have the following characteristic : high observation sensitivity, independence of the crack orientation, and precise imaging of a complex crack geometry such as multiple cracks. When a magnetic field is applied normally to the surface of a specimen which is significantly larger than its defects, approximately the same magnetic charge per unit area occurs on the surface of the specimen. If there is a crack in the specimen, magnetic charge per unit area has the same value at the bottom of the crack. The distribution of the vertical component of the magnetic flux density, B$\_$Z/, is almost uniform over the no-crack area (denoted as B$\_$Z,BASE/), while the magnetic flux density is smaller in the surroundings of the crack(denoted as B$\_$Z,CRACK/) If B$\_$Z, BASE/ is a bit larger than the saturated magnetic flux density of the MO sensor (B$\_$s/) , then small magnetic domains occur over the crack area and a large domain over the non-crack area because B$\_$Z,CRACK/ is smaller than B$\_$s/.

• 한국재료학회지
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• 제21권12호
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• pp.703-707
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• 2011

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

• 한국자기학회지
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• 제21권5호
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• pp.174-179
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• 2011

지금까지 자성체에 미치는 전자기력을 계산하기 위해서는, 맥스웰 응력법, 가상변위법, 자하법, 자화전류법등이 널리 사용되어 왔으며, 이들은 자성체 덩어리 전체에 미치는 전자기력을 계산하는 데 있어 모두 정당한 결과를 가져온다고 보고 있다. 그러나 전자기력 밀도식의 완전한 형태에 대해서는 아직 까지도 논란이 있으며, 각 방법에 의한 표면 전자기력 밀도는 식과 수치해석 모두 다른 결과를 보인다. 본 연구는 전자기력밀도를 체적력으로 국한하여 가상공극법을 적용하였을 때, 모두 같은 형태의 식으로 도출이 됨을 해석식이 존재하는 모델을 통하여 보여준다. 즉, 가상공극 개념을 적용할 경우, 체적력 전자기력 밀도식의 통일 가능성을 보여 주는 것이다.

• 전기학회논문지
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• 제58권2호
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• pp.278-284
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• 2009

The global force and interaction body force density were evaluated in permanent magnets by using the virtual air-gap scheme incorporating the finite-element method. Until now, the virtual air-gap concept has been successfully applied to calculate a contact force and a body force density in soft magnetic materials. These force calculating methods have been called as generalized methods such as the generalized magnetic charge force density method, the generalized magnetizing current force density method, and the generalized Kelvin force density method. For permanent magnets, however, there have been few research works on a contact force and a force density field. Unlike the conventional force calculating methods resulting in surface force densities, the generalized methods are novel methods of evaluating body force density. These generalized methods yield the actual total force, but their distributions have an irregularity, which seems to be random distributions of body force density. Inside permanent magnets, however, a smooth pattern was obtained in the interaction body force density, which represents the interacting force field among magnetic materials. To evaluate the interaction body force density, the intrinsic force density should be withdrawn from the total force density. Several analysis models with permanent magnets were tested to verify the proposed methods evaluating the interaction body force density and the contact force, in which the permanent magnet contacts with a soft magnetic material.

• 자원ㆍ환경경제연구
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• 제18권4호
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• pp.767-785
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• 2009

본 연구에서는 수질배출부과금제도의 부과체계를 분석하고 개선 방안을 연구하였다. 수질배출부과금제도는 환경오염 원인자에게 처리비용을 부담시켜 환경자원을 효율적으로 사용하도록 하는 경제적 유인 목적을 가지고 있으나 현행 수질배출부과금제도는 행정 규제적 성격이 강하다. 즉, 배출허용기준을 설정하여 이를 위반한 배출업소에 대하여 사업장 규모, 지역, 위반 횟수, 오염물질별 초과율을 고려한 누증적 부과계수를 적용하여 실제 환경오염 비용을 훨씬 초과하는 형벌적 성격의 부과금을 부과하고 있다. 그러나 과도한 부과금 부과로 배출부과금 징수율은 환경관련 부과금 중 가장 낮은 수준이다. 따라서 본 연구에서는 규제적 성격의 부과체계를 개편하여 경제적 유인제도로 수질배출부과금제도를 개편하는 부과체계 개편안을 연구하였으며 이에 따른 부과액 및 징수액 변화 효과를 추정하였다. 추정 결과를 보면 현행 부과금 부과액은 오염물질 처리단가의 약 4배 이상을 부과하고 있어 환경자원의 비효율적 배분을 초래하고 있음을 보여준다. 아울러 과도한 부과금 부과체계를 개선하는 경우에는 징수율도 제고되어 수질배출부과금제도의 기능을 회복할 수 있음을 보여준다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.239-242
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• 1998

Ca $F_2$ films have superior gate insulator properties than conventional gate insulator such as $SiO_2$, Si $N_{x}$, $SiO_{x}$, and T $a_2$ $O_{5}$ to the side of lattice mismatch between Si substrate and interface trap charge density( $D_{it}$). Therefore, this material is enable to apply Thin Film Transistor(TFT) gate insulator. Most of gate oxide film have exhibited problems on high trap charge density, interface state in corporation with O-H bond created by mobile hydrogen and oxygen atom. This paper performed Ca $F_2$ property evaluation as MIM, MIS device fabrication. Ca $F_2$ films were deposited at the various substrate temperature using a thermal evaporation. Ca $F_2$ films was grown as polycrystalline film and showed grain size variation as a function of substrate temperature and RTA post-annealing treatment. C-V, I-V results exhibit almost low $D_{it}$(1.8$\times$10$^{11}$ $cm^{-1}$ /le $V^{-1}$ ) and higher $E_{br}$ (>0.87MV/cm) than reported that formerly. Structural analysis indicate that low $D_{it}$ and high $E_{br}$ were caused by low lattice mismatch(6%) and crystal growth direction. Ca $F_2$ as a gate insulator of TFT are presented in this paper paperaper

• 한국표면공학회지
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• 제47권5호
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• pp.227-232
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• 2014

In this study, we propose the application of doping process technology for atmospheric pressure plasma. The plasma treatment means the wafer is warmed via resistance heating from current paths. These paths are induced by the surface charge density in the presence of illuminating Argon atmospheric plasmas. Furthermore, it is investigated on the high-concentration doping to a selective partial region in P type solar cell wafer. It is identified that diffusion of impurities is related to the wafer temperature. For the fixed plasma treatment time, plasma currents were set with 40, 70, 120 mA. For the processing time, IR(Infra-Red) images are analyzed via a camera dependent on the temperature of the P type wafer. Phosphorus concentrations are also analyzed through SIMS profiles from doped wafer. According to the analysis for doping process, as applied plasma currents increase, so the doping depth becomes deeper. As the junction depth is deeper, so the surface resistance is to be lowered. In addition, the surface charge density has a tendency inversely proportional to the initial phosphorus concentration. Overall, when the plasma current increases, then it becomes higher temperatures in wafer. It is shown that the diffusion of the impurity is critically dependent on the temperature of wafers.

• 전기화학회지
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• 제6권3호
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• pp.174-177
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• 2003

Electric double-layer capacitors based on charge storage at the interface between a high surface area activated carbon electrode and an electrolyte solution are characterized by their long cycle-life and high power density in comparison with batteries. However, energy density of electric double-layer capacitors obtained at present is about 6 Wh/kg at a power density of 500W/kg which is smaller as compared with that of batteries and limits the wide spread use of the capacitors. Therefore, a new capacitor that shows larger energy density than that of electric double-layer capacitors is proposed. The new capacitor is the hybrid capacitor consisting of activated carbon cathode, carbonaceous anode and an organic electrolyte. Maximum voltage applicable to the cell is over 4.2V that is larger than that of the electric double-layer capacitor. As a result, discharged energy density on the basis of stacked volume of electrode, current collector and separator is more than 18Wh/l at a power density of 500W/l.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1438-1440
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• 1998

In this work, simultaneous measur of space charge and conduction current was c out in LDPE with air gap by Pulsed-Electro-Aco Method. Also, effect of long time charging at con electric field on the formation of space charge conduction was investigated. From the experim results. we knew that the homo space charge formed near the dielectric surfaces and moving the bulk of dielectric as the electric field elevated. This was related with the deep traps b carriers and de trapping by Poole-field lowering conduction current was coincident with the Pool emission. From the long time charging experimen obtained the results that the negative space was moving into the dielectric bulk as the cha continued and the positive space charge accumulated at upper surface of LDPE.