• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.401-404
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• 2008

In the present investigation, a high precision thermal imprint system for micro ceramic products was developed and the net-shape manufacturing of multi-layer ceramic reflector for LED (Light Emitting Diode) was conducted with a precision metal die. Workpiece used in the present investigation were the multi-layer laminated ceramic sheets with pre-punched holes. The cavity with arbitrary angle was formed on the circular and rectangular holes of the ceramic sheets. During the imprinting process, the ambient temperature of the imprint system was kept over the transition temperature of the ceramic sheet and then rapidly cooled. The results in this paper show that the present method can be successfully applied to the fabrication of very small size hole array for ceramic reflector in a one step operation.

• The Korean Journal of Ceramics
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• v.6 no.3
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• pp.236-239
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• 2000

Both the X-ray diffraction data of the normal direction in the sample orientation and the pole figure data of three reflections, (111), (200) and (220), were used to do the Rietveld refinement for the copper sheet prepared by a cold rolling process. The agreement between calculated and observed patterns was not satisfactory, which was attributed to the preferred orientation effect of the copper sheet. The Rietveld refinement for the copper sheet could be done successfully by applying the pole density of each reflection obtained from the corresponding inverse pole figure to the X-ray diffraction data of the normal direction. The R-weighted pattern, $R_{wp}$ was 12.99% and the goodness-of-fit indicator, S, was 3.68.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.2
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• pp.63-68
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• 2007

A number of process problems should be solved in the multi-layered ceramic devices such as EMI filter. In particular, it is essential to control the sintering shrinkage in co-firing of different materials for obtaining defect-free samples such as crack, camber, and delamination which usually occur near the surface and interface. We studied the effect of the powder properties of ferrite on the co-firing behavior of green ceramic layers composed of ferrite and varistor. Three kind of ferrite powder samples as a function of milling time (24, 48, and 72 hr) were prepared. Varistor and ferrite ceramic green sheet were made by means of doctor blade process using slurry (ceramic powder and binder solution). Here, slurry was prepared by mixing 55 wt% powder with 45wt% binder solution. Varistor and ferrite green sheets were laminated at $80 kg/cm^2$, and co-fired at $900^{\circ}C$ and $1000^{\circ}C$ for 3 hr. We obtained the camber-free and co-fired ferrite/varistor layer structure by controlling the milling time and sintering temperature.

• Journal of the Korean Ceramic Society
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• v.33 no.11
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• pp.1267-1275
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• 1996

Green sheet was prepared by tape casting in the composition of (1-x)Pb(Mg1/3Nb2/3)O3-PbTiO3 system using Pb(Mg1/3Nb2/3)O3 and PbTiO3 synthesized with PbO, Nb2O5 MgO and TiO2 The densest green sheet was obtained in the weight ratio 70:30 of powder to binder. Green sheet wasmultilayered in metal mould and formed into lamination at 7$0^{\circ}C$, 300kg/cm2 The lamination was sintered at 110$0^{\circ}C$ 2hr, Dielectric constant and Curie temperature of disc type sintered body was highered with increasing the amount of PbTiO3 and was in the range of 19000-21000, -7~45$^{\circ}C$ respectively. Green and sintered relative density of lamination was 61% and 95% respectively.

• Journal of the Korean Ceramic Society
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• v.44 no.6 s.301
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• pp.313-318
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• 2007

ITO (Indium-tin oxide) thin films have been prepared by a sol-gel spinning coating method and fired and annealed in the temperature range of $450-600^{\circ}C$. The XRD patterns of the films indicated the main peak of (222) plane and showed higher crystallinity with increasing an annealing temperature. The surface of the ITO thin films were treated with 0.1 N HCl 20% solution at room temperature. The effects of surface treatment on electrical properties and surface morphologies of the ITO films were investigated with the results of sheet resistance and FE-SEM, AFM images. The samples, subsequently treated with acidic solution for 40 sec showed the sheet resistance of $0.982\;k{\Omega}/square$. The surface treatment using acidic solution diminished the RMS (root mean square) value and the residual carbon content of the ITO films. It seemed that the acid-cleaning of the ITO thin films lead to the decrease of surface roughness and sheet resistance.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.337-344
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• 1990

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

• Journal of the Korean Ceramic Society
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• v.34 no.11
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• pp.1173-1181
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• 1997

Effects of particle size distribution of alumina ceramics on behaviors of tape casting were investigated with emphases on the rheological characteristic of slurry, green density, green sheet strength, and sintering density. For the control of particle size distribution of alumina, the commercial grade low soda alumina, which had different mean particle size of 3.58 ${\mu}{\textrm}{m}$ and 0.42 ${\mu}{\textrm}{m}$, were chosen and blended together. As results, the mixing of 80 wt% fine powder and 20 wt% coarse powder(designated to FC20) led to the increase of packing density and strength of green sheet, and made it easy to handle during processing without lowering of sintering density. Besides, the pseudoplastic behavior of slurry decreased with increase of the fraction of coarse alumina powder.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.401-406
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• 2003

New planar discharge structured AC-PDP has been developed by using TFCS (Thick Film Ceramic Sheet) technology. By applying TFCS to AC-PDP, a sustaining electrode and scanning electrodes are embedded in the TFCS. It is shown that panel performances such as electrical and optical characteristics are superior to commercialized coplanar AC-PDP as well as cost reduction. Moreover the experimental result shows panel performances can be improved drastically by continuous development.

• Transactions on Electrical and Electronic Materials
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• v.2 no.2
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• pp.32-36
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• 2001

A new solid source for low temperature diffusion into silicon was developed. The source wafer consists of an “active” compound, which is sol-gel prepared phosphosilicate glass-ceramics containing 56% P$_2$O$\sub$5/, embedded in a skeletal foam-like, inert substrate. Phosphorus diffusion from the new solid sources at low temperatures (800-875$^{\circ}C$) produced reprodecible sheet resistances and shallow junctions. From a series of one hour doping runs, the life time of the phosphosilicate source was determined to be over 40 hours. The effective diffusion coefficient of phosphorus into silicon and the corresponding activation energy at 850$^{\circ}C$ were determined to be 7.5${\times}$10$\^$-15/ $\textrm{cm}^2$/sec and ∼3.9 eV, respectively.