• 한국소성가공학회:학술대회논문집
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• 한국소성가공학회 2008년도 추계학술대회 논문집
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• pp.401-404
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• 2008

In the present investigation, a high precision thermal imprint system for micro ceramic products was developed and the net-shape manufacturing of multi-layer ceramic reflector for LED (Light Emitting Diode) was conducted with a precision metal die. Workpiece used in the present investigation were the multi-layer laminated ceramic sheets with pre-punched holes. The cavity with arbitrary angle was formed on the circular and rectangular holes of the ceramic sheets. During the imprinting process, the ambient temperature of the imprint system was kept over the transition temperature of the ceramic sheet and then rapidly cooled. The results in this paper show that the present method can be successfully applied to the fabrication of very small size hole array for ceramic reflector in a one step operation.

• The Korean Journal of Ceramics
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• 제6권3호
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• pp.236-239
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• 2000

Both the X-ray diffraction data of the normal direction in the sample orientation and the pole figure data of three reflections, (111), (200) and (220), were used to do the Rietveld refinement for the copper sheet prepared by a cold rolling process. The agreement between calculated and observed patterns was not satisfactory, which was attributed to the preferred orientation effect of the copper sheet. The Rietveld refinement for the copper sheet could be done successfully by applying the pole density of each reflection obtained from the corresponding inverse pole figure to the X-ray diffraction data of the normal direction. The R-weighted pattern, $R_{wp}$ was 12.99% and the goodness-of-fit indicator, S, was 3.68.

• 한국결정성장학회지
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• 제17권2호
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• pp.63-68
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• 2007

EMI filter와 같은 적층형 세라믹 제조 시 공정 상 많은 문제점이 야기된다. 특히 표면과 계면에서의 crack, camber, delamination 같은 결함이 없는 적층체를 얻기 위해 서로 다른 두 재료의 동시 소성에 의한 수축율 조절이 필수적이다. 본 연구에서는 ferrite의 분체 특성을 통해 varistor/ferrite의 동시소성 거동을 연구하였다. ferrite 분말을 각각 24시간, 48시간, 72시간 분쇄하여 varistor와 ferrite 각각의 슬러리를 제조하고 doctor blade법으로 green sheet를 제조하였다. 슬러리는 분말 55wt(%)에 binder solution 45wt(%)로 혼합하여 제조하였다. Varistor와 ferrite green sheet는 $80 kg/cm^2$로 적층하여 $900^{\circ}C$, $1000^{\circ}C$에서 3시간 소결 하였다. 그 결과 분쇄시간과 소결온도 조절로 결함이 없는 동시 소성된 ferrite/varistor 적층체를 제조 할 수 있었다.

• 한국세라믹학회지
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• 제33권11호
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• pp.1267-1275
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• 1996

Green sheet was prepared by tape casting in the composition of (1-x)Pb(Mg1/3Nb2/3)O3-PbTiO3 system using Pb(Mg1/3Nb2/3)O3 and PbTiO3 synthesized with PbO, Nb2O5 MgO and TiO2 The densest green sheet was obtained in the weight ratio 70:30 of powder to binder. Green sheet wasmultilayered in metal mould and formed into lamination at 7$0^{\circ}C$, 300kg/cm2 The lamination was sintered at 110$0^{\circ}C$ 2hr, Dielectric constant and Curie temperature of disc type sintered body was highered with increasing the amount of PbTiO3 and was in the range of 19000-21000, -7~45$^{\circ}C$ respectively. Green and sintered relative density of lamination was 61% and 95% respectively.

• 한국세라믹학회지
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• 제44권6호
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• pp.313-318
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• 2007

ITO (Indium-tin oxide) thin films have been prepared by a sol-gel spinning coating method and fired and annealed in the temperature range of $450-600^{\circ}C$. The XRD patterns of the films indicated the main peak of (222) plane and showed higher crystallinity with increasing an annealing temperature. The surface of the ITO thin films were treated with 0.1 N HCl 20% solution at room temperature. The effects of surface treatment on electrical properties and surface morphologies of the ITO films were investigated with the results of sheet resistance and FE-SEM, AFM images. The samples, subsequently treated with acidic solution for 40 sec showed the sheet resistance of $0.982\;k{\Omega}/square$. The surface treatment using acidic solution diminished the RMS (root mean square) value and the residual carbon content of the ITO films. It seemed that the acid-cleaning of the ITO thin films lead to the decrease of surface roughness and sheet resistance.

• 한국세라믹학회지
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• 제27권3호
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• pp.337-344
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• 1990

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

• 한국세라믹학회지
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• 제34권11호
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• pp.1173-1181
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• 1997

Effects of particle size distribution of alumina ceramics on behaviors of tape casting were investigated with emphases on the rheological characteristic of slurry, green density, green sheet strength, and sintering density. For the control of particle size distribution of alumina, the commercial grade low soda alumina, which had different mean particle size of 3.58 ${\mu}{\textrm}{m}$ and 0.42 ${\mu}{\textrm}{m}$, were chosen and blended together. As results, the mixing of 80 wt% fine powder and 20 wt% coarse powder(designated to FC20) led to the increase of packing density and strength of green sheet, and made it easy to handle during processing without lowering of sintering density. Besides, the pseudoplastic behavior of slurry decreased with increase of the fraction of coarse alumina powder.

• 한국세라믹학회지
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• 제29권1호
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.401-406
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• 2003

New planar discharge structured AC-PDP has been developed by using TFCS (Thick Film Ceramic Sheet) technology. By applying TFCS to AC-PDP, a sustaining electrode and scanning electrodes are embedded in the TFCS. It is shown that panel performances such as electrical and optical characteristics are superior to commercialized coplanar AC-PDP as well as cost reduction. Moreover the experimental result shows panel performances can be improved drastically by continuous development.

• Transactions on Electrical and Electronic Materials
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• 제2권2호
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• pp.32-36
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• 2001

A new solid source for low temperature diffusion into silicon was developed. The source wafer consists of an “active” compound, which is sol-gel prepared phosphosilicate glass-ceramics containing 56% P$_2$O$\sub$5/, embedded in a skeletal foam-like, inert substrate. Phosphorus diffusion from the new solid sources at low temperatures (800-875$^{\circ}C$) produced reprodecible sheet resistances and shallow junctions. From a series of one hour doping runs, the life time of the phosphosilicate source was determined to be over 40 hours. The effective diffusion coefficient of phosphorus into silicon and the corresponding activation energy at 850$^{\circ}C$ were determined to be 7.5${\times}$10$\^$-15/ $\textrm{cm}^2$/sec and ∼3.9 eV, respectively.