• Title/Summary/Keyword: ceramic interface

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Surface Characteristics of Polymer Coated NiTi Alloy Wire for Orthodontics (폴리머 코팅된 NiTi합금 교정선의 표면특성)

  • Cho, Joo-Young;Kim, Won-Gi;Choi, Hwan-Suk;Lee, Ho-Jong;Choe, Han-Cheol
    • Journal of the Korean institute of surface engineering
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    • v.43 no.3
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    • pp.132-141
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    • 2010
  • NiTi alloy has been used for orthodontic wire due to good mechanical properties, such as elastic strength and frictional resistance, combined with a high resistance to corrosion. Recently, these wire were coated by polymer and ceramic materials for aesthetics. The purpose of this study was to investigate surface characteristics of polymer coated NiTi alloy wire for orthodontics using various instruments. Wires (round type and rectangular type) were used, respectively, for experiment. Polymer coating was carried out for wire. Specimen was investigated with field emission scanning electron microscopy(FE-SEM), energy dispersive x-ray spectroscopy(EDS) and atomic force microscopy(AFM). The phase transformation of non-coated NiTi wire from martensite to austenite occurred at the range of $14{\sim}15^{\circ}C$, in the case of coated wire, it occurred at the range of $16{\sim}18^{\circ}C$. Polymer coating on NiTi wire surface decreased the surface defects such as scratch which was formed at severe machined surface. From the AFM results, the average surface roughness of non-coated and coated NiTi wire was 13.1 nm, and 224.5 nm, respectively. From convetional surface roughness test, the average surface roughness of non-coated and coated NiTi wire was $0.046{\mu}m$, and $0.718{\mu}m$, respectively.

Microwave Dielectric Properties of La2O3-B2O3-TiO2 Glass-Ceramic and BaNd2Ti5O14Ceramic System for LTCC Application (저온동시소성(LTCC)을 위한 결정화 유리(La2O3-B2O3-TiO2계)와 BaNd2Ti5O14 세라믹을 이용한 마이크로파 유전체 특성)

  • 황성진;김유진;김형순
    • Journal of the Korean Ceramic Society
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    • v.41 no.8
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    • pp.599-604
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    • 2004
  • The LTCCs (Low-Temperature Co-fired Ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$<90$0^{\circ}C$ are required. In this study, BaO-N $d_2$ $O_3$-Ti $O_2$ (BNT : 20∼40 wt%) for ceramic materials and L $a_2$ $O_3$- $B_2$ $O_3$-Ti $O_2$ (LBT : 80∼60 wt%) for crystallizable glasses were used. The glass/ceramic composites were investigated for sintering behavior, phase evaluation, densities, interface reaction and microwave dielectric properties. It was found that the addition LBT glass frist significantly lowered the sintering temperature to below 90$0^{\circ}C$ and the densification with increasing addition LBT glass frist developed rapidly which was meant to be namely 90% of relative density. The sintered bodies ekhibited applicable dielectric properties, namely 15 for $\varepsilon$$_{r}$,, 10000 GHz for Q* $f_{0}$. The results suggest that the composites have good potential as a new candidate for LTCC materials.

Catalytic CO2 Methanation over Ni Catalyst Supported on Metal-Ceramic Core-Shell Microstructures (금속-세라믹 코어-쉘 복합체에 담지된 Ni 금속 촉매를 적용한 CO2 메탄화 반응 특성연구)

  • Lee, Hyunju;Han, Dohyun;Lee, Doohwan
    • Clean Technology
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    • v.28 no.2
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    • pp.154-162
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    • 2022
  • Microstructured Al@Al2O3 and Al@Ni-Al LDH (LDH = layered double hydroxide) core-shell metal-ceramic composites are prepared by hydrothermal reactions of aluminum (Al) metal substrates. Controlled hydrothermal reactions of Al metal substrates induce the hydrothermal dissolution of Al ions at the Al-substrate/solution interface and reconstruction as porous metal-hydroxides on the Al substrate, thereby constructing unique metal-ceramic core-shell composite structures. The morphology, composition, and crystal structure of the core-shell composites are affected largely by the ions in the hydrothermal solution; therefore, the critical physicochemical and surface properties of these unique metal-ceramic core-shell microstructures can be modulated effectively by varying the solution composition. A Ni/Al@Al2O3 catalyst with highly dispersed catalytic Ni nanoparticles on an Al@Al2O3 core-shell substrate was prepared by a controlled reduction of an Al@Ni-Al LDH core-shell prepared by hydrothermal reactions of Al in nickel nitrate solution. The reduction of Al@Ni-Al LDH leads to the exolution of Ni ions from the LDH shell, thereby constructing the Ni nanoparticles dispersed on the Al@Al2O3. The catalytic properties of the Ni/Al@Al2O3 catalyst were investigated for CO2 methanation reactions. The Ni/Al@Al2O3 catalyst exhibited 2 times greater CO2 conversion than a Ni/Al2O3 catalyst prepared by conventional incipient wetness impregnation and showed high structural stability. These results demonstrate the high effectiveness of the design and synthesis methods for the metal-ceramic composite catalysts derived by hydrothermal reactions of Al metal substrates.

Growth of Si-Doped β-Ga2O3 Epi-Layer by Metal Organic Chemical Vapor Deposition U sing Diluted SiH4 (유기 금속 화학 증착법(MOCVD)의 희석된 SiH4을 활용한 Si-Doped β-Ga2O3 에피 성장)

  • Hyeong-Yun Kim;Sunjae Kim;Hyeon-U Cheon;Jae-Hyeong Lee;Dae-Woo Jeon;Ji-Hyeon Park
    • Korean Journal of Materials Research
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    • v.33 no.12
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    • pp.525-529
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    • 2023
  • β-Ga2O3 has become the focus of considerable attention as an ultra-wide bandgap semiconductor following the successful development of bulk single crystals using the melt growth method. Accordingly, homoepitaxy studies, where the interface between the substrate and the epilayer is not problematic, have become mainstream and many results have been published. However, because the cost of homo-substrates is high, research is still mainly at the laboratory level and has not yet been scaled up to commercialization. To overcome this problem, many researchers are trying to grow high quality Ga2O3 epilayers on hetero-substrates. We used diluted SiH4 gas to control the doping concentration during the heteroepitaxial growth of β-Ga2O3 on c-plane sapphire using metal organic chemical vapor deposition (MOCVD). Despite the high level of defect density inside the grown β-Ga2O3 epilayer due to the aggregation of random rotated domains, the carrier concentration could be controlled from 1 × 1019 to 1 × 1016 cm-3 by diluting the SiH4 gas concentration. This study indicates that β-Ga2O3 hetero-epitaxy has similar potential to homo-epitaxy and is expected to accelerate the commercialization of β-Ga2O3 applications with the advantage of low substrate cost.

SiAlON Bulk Glasses and Their Role in Silicon Nitride Grain Boundaries: Composition-Structure-Property Relationships

  • Hampshire, Stuart;Pomeroy, Michael J.
    • Journal of the Korean Ceramic Society
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    • v.49 no.4
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    • pp.301-307
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    • 2012
  • SiAlON glasses are silicates or alumino-silicates, containing Mg, Ca, Y or rare earth (RE) ions as modifiers, in which nitrogen atoms substitute for oxygen atoms in the glass network. These glasses are found as intergranular films and at triple point junctions in silicon nitride ceramics and these grain boundary phases affect their fracture behaviour. This paper provides an overview of the preparation of M-SiAlON glasses and outlines the effects of composition on properties. As nitrogen substitutes for oxygen in SiAlON glasses, increases are observed in glass transition temperatures, viscosities, elastic moduli and microhardness. These property changes are compared with known effects of grain boundary glass chemistry in silicon nitride ceramics. Oxide sintering additives provide conditions for liquid phase sintering, reacting with surface silica on the $Si_3N_4$ particles and some of the nitride to form SiAlON liquid phases which on cooling remain as intergranular glasses. Thermal expansion mismatch between the grain boundary glass and the silicon nitride causes residual stresses in the material which can be determined from bulk SiAlON glass properties. The tensile residual stresses in the glass phase increase with increasing Y:Al ratio and this correlates with increasing fracture toughness as a result of easier debonding at the glass/${\beta}-Si_3N_4$ interface.

Effects of Co-doping on Densification of Gd-doped CeO2 Ceramics and Adhesion Characteristics on a Yttrium Stabilized Zirconia Substrate

  • Lee, Ho-Young;Kang, Bo-Kyung;Lee, Ho-Chang;Heo, Young-Woo;Kim, Jeong-Joo;Lee, Joon-Hyung
    • Journal of the Korean Ceramic Society
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    • v.55 no.6
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    • pp.576-580
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    • 2018
  • In this study, a small amount of CoO was added to commercial Gd-doped $CeO_2$ (GDC) powder. The CoO addition greatly enhanced sinterability at low temperatures, i.e., more than 98% of relative density was achieved at $1,000^{\circ}C$. When GDC/8YSZ (8 mol% yttrium stabilized zirconia) bilayers were sintered, Co-doped GDC showed excellent adhesion to the YSZ electrolyte. Transmission electron microscope (TEM) analysis showed that there were no traces of liquid films at the grain boundaries of GDC, whereas liquid films were observed in the Co-doped GDC sample. Because liquid films facilitate particle rearrangement and migration during sintering, mechanical stresses at the interface of a bilayer, which are developed based on different densification rates between the layers, might be reduced. In spite of $Co^{2+}$ doping in GDC, the electrical conductivity was not significantly changed, relative to GDC.

The preparation and Characterization of Bismuth Layered Ferroelectric Thin Films by Sol-Gel Process (솔-젤법을 이용한 Bismuth Layered Structure를 가진 강유전성 박막의 제조 및 특성평가에 관한 연구)

  • 주진경;송석표;김병호
    • Journal of the Korean Ceramic Society
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    • v.35 no.9
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    • pp.945-952
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    • 1998
  • Ferroelectric Sr0.8Bi2.4Ta2O9 stock solutions were prepared by MOD(Metaloganic Decompostion) process. The phase transformation for the layered perovskite of the SBT thin films by changing RTA(Rapid her-mal Annealing) temperatuer from 700$^{\circ}C$to 780$^{\circ}C$ were observed using XRD and SEM. Layered perovskite phase began to appear above 740$^{\circ}C$ and then SBT thin films were annealed at 800$^{\circ}C$ for 1hr for its com-plete crystallization. The specimens showed well shaped hysteresis curves without post annealing that car-ried out after deposition of Pt top electrode. The SBT thin films showed the asymmetric ferroelectric pro-perties. It was confirmed that the properties were caused by interface effect to SBT and electrode by leak-age current density measurement and asymmetric properties reduced by post annealing. At post annealing temperature of 800$^{\circ}C$ remanant polarization values (2Pr) were 6.7 9 ${\mu}$C/cm2 and those of leakage current densities were 3.73${\times}$10-7 1.32${\times}$10-6 A/cm2 at 3, 5V respectively. Also bismuth bonding types of SBT thin film surface were observed by XPS.

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Fabrication of SiC Converted Graphite by Chemical Vapor Reaction Method (화학적 기상 반응법에 의한 탄화규소 피복 흑연의 제조 (I))

  • 윤영훈;최성철
    • Journal of the Korean Ceramic Society
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    • v.34 no.12
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    • pp.1199-1204
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    • 1997
  • SiC conversion layer was fabricated by the chemical vapor reaction between graphite substrate and silica powder. The CVR process was carried out in nitrogen atmosphere at 175$0^{\circ}C$ and 185$0^{\circ}C$. From the reduction of silica powder with graphite substrate, the SiO vapor was created, infiltrated into the graphite substrate, then, the SiC conversion layer was formed from the vapor-solid reaction of SiO and graphite. In the XRD pattern of conversion layer, it was confirmed that 3C $\beta$-SiC phase was created at 175$0^{\circ}C$ and 185$0^{\circ}C$. Also, in the back scattered image of cross-sectional conversion layer, it was found that the conversion layer was easily formed at 185$0^{\circ}C$, the interface of graphite substrate and SiC layer was observed. It was though that the coke particle size and density of graphite substrate mainly affect the XRD pattern and microstructure of SiC conversion layer. In the oxidation test of 100$0^{\circ}C$, the SiC converted graphites exhibited good oxidation resistance compared with the unconverted graphites.

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Thermal Decomposition of $\beta$$-Sialon by Graphite (이연에 의한 $\beta$$-사이알론의 열분해)

  • 최상흘;이희철;이종진;서규식
    • Journal of the Korean Ceramic Society
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    • v.24 no.5
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    • pp.453-460
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    • 1987
  • β'-sialon(Z=2.7) specimens with <30%wt. graphite as a reducing agent were decomposed at 1350°up to 1,450℃ under the atmosphere of 90% N2-10%H2. The decomposition of β'-sialon was calculated from the change in Z-value, and the formation of new minerals was identified from X-ray diffraction patterns. The decomposition reactions of sialon were considered to yield a stable sialon close to β-silicon nitride and some aluminum compounds according to the following equations; β'-sialon(s)+C(s)+N2(g)→β2-sialon(metastable)+β3-sialon(stalbe phase) β2-sialon(s)+C(s)+N2(g)→β3-sialon(s)+AlN(s)+α-Al2O3(s)+15R(s)+SiO(g)+Al2O(g)+CO(g) Z-value; β2( 3.5)>β'( 2.7)>β3( 0.5) The decomposition rate of sialon was controlled by two mechanisms ; One was characterized by the interface area of contact, corresponding to an apparent activation energy of 50.5Kcal/mol in the initial stage, and the other by the diffusion, corresponding to that of 104.3Kcal/mol in the final stage of the decomposition.

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Characteristics of Bi(Pb)-Sr-Ca-Cu-O Superconductor Wire Fabricated using the Billet Insertion Method (Billet 장입 방식을 이용 제조한 Bi(Pb)-Sr-Ca-Cu-O 초전도 선재의 특성)

  • 장건익;유재근;홍계원
    • Journal of the Korean Ceramic Society
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    • v.33 no.4
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    • pp.471-477
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    • 1996
  • During Bi(Pb)-Sr-Ca-Cu-O superconductor wire fabrication the effect of the initial packing density on the final characteristics of superconductor wire was systematically studied. To increase the powder packing density with uniform distribution of superconducting core a billet insertion method processed by CIP was applied instead of the commonly used vibration and ramming method of powder insertion into silver sheath. Compared with the vibration and ramming method the billent insertion technique processed by CIP cause the 30% incre-specimen with 130${\mu}{\textrm}{m}$(core thickness : 45 ${\mu}{\textrm}{m}$)and 5.24 mm width processed at 84$0^{\circ}C$for 200hrs. shows specimen with 130${\mu}{\textrm}{m}$ (core thickness ; 45${\mu}{\textrm}{m}$)and 5.24 mm width processed at 84$0^{\circ}C$ for 200 hrs. shows maximum 34A for Ic and 16, 700 A/cm2 for Ic measured at 77K and 0T. Also the sample rolled 3 times shows maximum 7, 2A for Ic and 11, 000 A/cm2 for 77K and 0T. Based on X-ray experimental results the formation of Bi-2223 and texture were significantly well developed at the interface between the superconducting core and silver sheath as compared with those of the interior area of superconducting core.

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