• 한국세라믹학회지
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• 제51권4호
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• pp.295-299
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• 2014

Electrical conductivities of complex perovskites, layered perovskite and Sr doped layered perovskite oxides were measured and analyzed for cathode materials of Intermediate Temperature-operating Solid Oxide Fuel Cells (IT-SOFCs). The electrical conductivities of $Sm_{1-x}Sr_xCoO_{3-\delta}$ (x = 0.3 and 0.7) exhibit a metal-insulator transition (MIT) behavior as a function of temperature. However, $Sm_{0.5}Sr_{0.5}CoO_{3-\delta}$ (SSC55) shows metallic conductivity characteristics and the maximum electrical conductivity value compared to the values of $Pr_{0.5}Sr_{0.5}CoO_{3-\delta}$ (PSC55) and $Nd_{0.5}Sr_{0.5}CoO_{3-\delta}$ (NSC55). The electrical conductivity of $SmBaCo_2O_{5+\delta}$ (SBCO) exhibits a MIT at about $250^{\circ}C$. The maximum conductivity is 570 S/cm at $200^{\circ}C$ and its value is higher than 170 S/cm over the whole temperature range tested. $SmBa_{0.5}Sr_{0.5}Co_2O_{5+\delta}$ (SBSCO), 0.5 mol% Sr and Ba substituted at the layered perovskite shows a typically metallic conductivity that is very similar to the behavior of the SSC55 cathode, and the maximum and minimum electrical conductivity in the SBSCO are 1280 S/cm at $50^{\circ}C$ and 280 S/cm at $900^{\circ}C$.

• 한국재료학회지
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• 제18권4호
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• pp.169-174
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• 2008

The structural and electrical properties of amorphous $BaSm_2Ti_4O_{12}$ (BSmT) films on a $TiN/SiO_2/Si$ substrate deposited using a RF magnetron sputtering method were investigated. The deposition of BSmT films was carried out at $300^{\circ}C$ in a mixed oxygen and argon ($O_2$ : Ar = 1 : 4) atmosphere with a total pressure of 8.0 mTorr. In particular, a 45 nm-thick amorphous BSmT film exhibited a high capacitance density and low dissipation factor of $7.60\;fF/{\mu}m2$ and 1.3%, respectively, with a dielectric constant of 38 at 100 kHz. Its capacitance showed very little change, even in GHz ranges from 1.0 GHz to 6.0 GHz. The quality factor of the BSmT film was as high as 67 at 6 GHz. The leakage current density of the BSmT film was also very low, at approximately $5.11\;nA/cm^2$ at 2 V; its conduction mechanism was explained by the the Poole-Frenkel emission. The quadratic voltage coefficient of capacitance of the BSmT film was approximately $698\;ppm/V^2$, which is higher than the required value (<$100\;ppm/V^2$) for RF application. This could be reduced by improving the process condition. The temperature coefficient of capacitance of the film was low at nearly $296\;ppm/^{\circ}C$ at 100 kHz. Therefore, amorphous BSmT grown on a TiN substrate is a viable candidate material for a metal-insulator-metal capacitor.

• 한국결정성장학회지
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• 제14권3호
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• pp.115-122
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• 2004

다공성 물질이 건조될 때 입자는 겔 상태의 그물망 구조를 갖는다. 따라서 건조공정 중 발생하는 잔류응력을 정확하게 해석하기 위해서는 공극률과 공극형상에 따른 물성을 알아야 한다. 본 연구에서는 균질화법으로 원형과 십자형의 공극을 갖는 미시적인 겔구조로부터 공극률에 따른 재료의 탄성특성을 예측하고. 다공성 세라믹 애자의 건조공정을 유한요소 해석하였다. 해석 결과, 변형 형상과 온도, 습도 분포는 공극을 고려하지 않은 해석과 유사하지만 잔류응력 값은 큰 차이가 있음을 알 수 있었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.201.2-201.2
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• 2016

The triggered vacuum switch (TVS) is widely used as a high power switch in the field of pulsed power application. TVS can produce current of higher than 100 kA within a microsecond after being triggered. A triggering high voltage pulse generator supplies a high voltage signal to the trigger system to initiate the discharge between a trigger pin and one of main electrode. The trigger system, which consists of a tungsten trigger electrode and cylindrical ceramic insulator around it, is normally installed at the center of main cathode electrode. The discharging characteristics of the trigger system strongly depend on the geometry, electrode material, vacuum pressure and so on. In addition, we especially will focus on the developing a triggering pulse generator, which can vary not only value of voltage but also pulse duration, because its properties gives pivot influences on the TVS discharge. To verify such effects, we made a 3.3 kJ TVS set-up initially. Thus we will discuss some of prominent results from 3.3 kJ TVS system. In parallel we will show on the design of 300 kJ TVS system for the high current in the future.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2005년도 ICCAS
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• pp.2063-2066
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• 2005

This paper presents an approach to detect the dielectric condition of FRP Hot Stick in EHV high voltage cable whereas shutting down the power system is not necessary. The radio frequency generating method is adopted by transmitting radio wave into the Electrodes. This instrument is small, easy to use and also inexpensive. Furthermore, the impurity level of dirt on high voltage insulator (non-ceramic type) will be analyzed by using the methods based on IEEE Std.978-1984 at 105 kV.DC. /305 mm. and OSHA Regulation 1910.269 Part J - live line tools. The frequency at 10-20 MHz is applied to FRP Hot Stick via Electrode1 and from FRP Hot Stick surface to Electrode 2. After that the results will be evaluated by testing in each condition of FRP Hot Stick, such as dry surface, hot surface, foil winding and conductor inserting. Finally, the watt loss will be examined and compared with the loss from humidity and Carbon tracking. The important components of this system are radio frequency generating unit, frequency stabilizing unit, frequency amplifier, FRP Hot Stick frequency counter, processing unit, and display unit.

• 한국결정성장학회지
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• 제15권4호
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• pp.168-174
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• 2005

건조공정 중인 다공성 물질의 물성은 재료의 비균질성 즉 전위, 입자, 입계, 균열, 기공과 같은 미시적인 결함 인자들의 영향을 받는다. 따라서 다공성 물질의 건조공정을 전산 시뮬레이션하기 위해서는 연속체 스케일과 원자 스케일해석 그리고 스케일별 해석 한계 극복이 요구된다. 본 연구에서는 분자동역학 시뮬레이션으로 계산한 나노스케일 물성를 연속체 스케일 해석에 연계하는 계층적 멀티스케일 시스템을 구축하고, 다공성 세라믹 애자의 건조공정을 전산 시뮬레이션 하였다. 해석 결과, 온도, 습도, 변형률 그리고 응력 분포를 기존의 결과들과 비교하여 검증하였다.

• 한국재료학회지
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• 제14권6호
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• pp.413-419
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• 2004

Recently, Silicon On Insulator (SOI) devices emerged to achieve better device characteristics such as higher operation speed, lower power consumption and latch-up immunity. Nevertheless, there are many detrimental defects in SOI wafers such as hydrofluoric-acid (HF)-defects, pinhole, islands, threading dislocations (TD), pyramid stacking faults (PSF), and surface roughness originating from quality of buried oxide film layer. Although the number of defects in SOI wafers has been greatly reduced over the past decade, the turn over of high-speed microprocessors using SOI wafers has been delayed because of unknown defects in SOI wafers. A new characterization method is proposed to investigate the crystalline quality, the buried oxide integrity and some electrical parameters of bonded SOI wafers. In this study, major surface defects in bonded SOI are reviewed using HF dipping, Secco etching, Cu-decoration followed by focused ion beam (FIB) and transmission electron microscope (TEM).

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2012년도 추계총회 및 학술대회 논문집
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• pp.179-180
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• 2012

Aluminum alloys are widely known as non-ferrous metal with light weight and high strength. Consequently, these materials take center stage in the aircraft and automobile industry. The Al7075 aluminum alloy is based on the Al-Zn-Mg-Cu and one of the strongest wrought aluminum alloys. Aluminum nitride has ten times higher thermal conductivity($319W/m{\cdot}K$) than Al2O3 and also has outstanding electric insulation($1{\times}1014{\Omega}{\cdot}cm$). Furthermore, it has high mechanical property (430 MPa) even though its co-efficient of thermal expansion is less than alumina For these reasons, it has great possibilities to be used for not only the field which needs high strength lightweight but also electronic material field because of its suitability to be applied to the insulator film of PCB or wafer of ceramic with high heat conduction. This paper investigates the mechanical properties and corrosion behavior of aluminum alloy Al7075 deposited with aluminum nitride thin films To improve the surface properties of Al7075 with respect to hardness, and resistance to corrosion, aluminum nitride thin films have been deposited by pulsed DC reactive magnetron sputtering. The pulsed DC power provides arc-free deposition of insulating films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.235-238
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• 1998

Ferroelectric $LiNbO_3$ thin films were grown directly on Si(100) substrates by 13.55MHz RF magnetron sputtering system using a ceramic target ($Nb_2O_5/Li_2C0_3$ = 51.4/48.6). Because high temperature process have to avoided to prevent degradation of the interface (insulator/Si), $LiNbO_3$ thin films were deposited below $300^{\circ}C$. After as-deposited films were performed RTA treatments in an oxygen ambient at $600^{\circ}C$ for 60s, electrical measurements performed films before and after anneal treatment. In high field region, the leakage current density of the films after annealing was deceased about 4order and the resistivity of these was increased to about 5\times 10^{11} \Omega \cdot cm$ at 500kV/cm. In accumulation region of C-V curve, we calculated dielectric constant of thin film $LiNbO_3$ as 27.9 which is close to that of bulk value.

• Journal of Electrical Engineering and Technology
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• 제9권5호
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• pp.1677-1685
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• 2014

Major problem in the high voltage power transmission line is the flashover due to polluted ceramic insulators which leads to failure of equipments, catastrophic fires and power outages. This paper deals with the development of a better diagnostic tool to predict the flashover and pollution severity of power transmission line insulators based on the wavelet transform and fuzzy c-means clustering approach. In this work, laboratory experiments were carried out on power transmission line porcelain insulators under AC voltages at different pollution conditions and corresponding leakage current patterns were measured. Discrete wavelet transform technique is employed to extract important features of leakage current signals. Variation of leakage current magnitude and distortion ratio at different pollution levels were analyzed. Fuzzy c-means algorithm is used to cluster the extracted features of the leakage current data. Test results clearly show that the flashover and pollution severity of power transmission line insulators can be effectively realized through fuzzy clustering technique and it will be useful to carry out preventive maintenance work.