• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.359-359
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• 2012

Trivalent rare-earth ($RE^{3+}=Eu^{3+}\;and\;Tb^{3+}$) ions activated $CaGd_4O_7$ phosphors were synthesized by a sol-gel process. After annealing at $1,500^{\circ}C$, the XRD patterns of the phosphor confirmed their monoclinic structure. The photoluminescence excitation spectra of $Eu^{3+}$ and $Tb^{3+}$ doped $CaGd_4O_7$ phosphor shows the broad-band excitations in the shorter wavelength region due to charge transfer band of completely filled $O^{2-}$ to the partially filled $Eu^{3+}$ ions and f-d transitions of $Tb^{3+}$ ions, respectively. The photoluminescence spectra show that the reddish-orange ions and green emission for $Eu^{3+}$ and $Tb^{3+}$ ions, respectively. Owing to the importance of thermal quenching property in the technological parameters, the temperature-dependent luminescence properties of these phosphors were measured for examing the suitability of their applications in the development of light emitting diodes (LEDs). In addition to those measurements, the cathodoluminescence properties were examined by changing the acceleration voltage and filament current. The calculated chromaticity coordinates of these phosphors were close proximity to those of commercially available phosphors for LED and field emission display devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.238-238
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• 2016

백색 발광다이오드(LED)는 기존 조명(백열등, 형광등)에 비하여 월등히 에너지를 절약할 수 있어 이미 상업적, 정책적으로 교체가 진행 중이다. 현재의 백색 LED를 만들기 위해서는 필연적으로 형광체를 사용해야 한다. 그러나 이 형광체에 의한 (a)Stocks 에너지변환에 의한 효율감소, (b)높은 공정비용, (c) 열적 안정성 저하를 피할 수 없다. 우리는 유기금속화학증착(MOCVD)과 선택적성장(selective-area epitaxial growth)방법을 이용하여 형광체를 쓰지 않고 3차원 구조체를 이용하여 백색 LED를 제작하여 전기구동하였고 전류의 세기를 변화하여도 지속적으로 동일한 백색광을 유지함을 보였다. 광학적 분석(cathodoluminescence)과 구조적 분석(scanning electron microscope, transmission electron microscope)을 진행하여 구조를 살피고 백색 발광의 원인을 분석하였다. 또한, 고배율 대물렌즈를 사용한 공간분해 광학적 분석실험(photoluminescence와 electroluminescence 데이터를 비교)으로부터 국소적 운반자의 주입효율을 분석하는 방법을 고안하여 실험하였다.[1] 향후 이 방법은 3차원 구조체 LED뿐 아니라 2차원 LED에도 응용하여 LED의 주입효율을 분석하는데 유용하게 사용될 수 있을 것이라 기대된다.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.171.2-171.2
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• 2015

Nowadays, trivalent rare-earth ($RE^{3+}$) ions activated metal oxides have been proved to be excellent host materials due to their various applications. Facile wet-chemical technique have been considered as the best synthetic route due its intensive interest in the preparation of nanostructures. Europium ion doped lanthanum hydroxide ($La(OH)_3:Eu^{3+}$) phosphors were synthesized by the facile wet chemical method using the hexamethylenetetramine (HMTA) as a mediated surfactant. The thermal behavior for the $La(OH)_3:Eu^{3+}$ phosphors was investigated by thermogravimetric and differential thermal analysis method. The morphological studies were measured by scanning electron microscope and transmission electron microscope measurements, indicating three-dimensional (3D) flower-like $La(OH)_3:Eu^{3+}$ nanorod bundles. After subsequent annealing process, the lanthanum oxide ($La_2O_3:Eu^{3+}$) phosphor exhibited similar kind of morphology. The synthesized $La(OH)_3:Eu^{3+}$ and $La_2O_3:Eu^{3+}$ samples were characterized by X-ray powder diffraction and Fourier transform infrared spectroscopy. Furthermore, photoluminescence and cathodoluminescence properties were studied in details.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.590-594
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• 2018

ZnO micro/nanocrystals are formed by a vapor transport method. Mixtures of ZnO and TiO powders are used as the source materials. The TiO powder acts as a reducing agent to reduce the ZnO to Zn and plays an important role in the formation of ZnO micro/nanocrystals. The vapor transport process is carried out in air at atmospheric pressure. When the weight ratios of TiO to ZnO in the source material are lower than 1:2, no ZnO micro/nanocrystals are formed. However, when the ratios of TiO to ZnO in the source material are greater than 1:1, the ZnO crystals with one-dimensional wire morphology are formed. In the room temperature cathodoluminescence spectra of all the products, a strong ultraviolet emission centered at 380 nm is observed. As the ratio of TiO to ZnO in the source material increases from 1:2 to 1:1, the intensity ratio of ultraviolet to visible emission increases, suggesting that the crystallinity of the ZnO crystals is improved. Only the ultraviolet emission is observed for the ZnO crystals prepared using the source material with a TiO/ZnO ratio of 2:1.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1576-1579
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• 2005

With varying rapid thermal annealing (RTA) temperature, luminescence properties of $Zn_{0.75}Mg_{0.25}S:Mn$ thin film deposited by RF-magnetron sputtering technique were investigated. In this study, $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor showed more red emission than those of the previous studies when annealed around 600 or $650^{\circ}C$. Although all samples were deposited from identical source composition, a main peak wavelength of photoluminescence spectra of $Zn_{0.75}Mg_{0.25}S:Mn$ shifted toward shorter wavelengths depending upon increase of RTA temperature. The same dependence of wavelength on RTA temperature was also observed in cathodoluminescence as well as electroluminescence measurements. It was revealed that the change of the luminescence properties were originated from structural changes in $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor from cubic to hexagonal phases analyze using conventional X-ray pole figure mapping. The phase transition would be the origin of luminescence property changes with respect to RTA temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.539-542
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions at the calcine temperature of $700^{\circ}C$ and sintering temperature of $1300^{\circ}C$ in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on Si(100) substrate and prepared $ZnGa_2O_4$ phosphor thin film is annealed by rapid thermal processor(RTP) at $700^{\circ}C$, 15sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodoluminescenre(CL) spectrums of $ZnGa_2O_4$ phosphor thin film show main peak of 420nm and maximum intensity at the substrate temperature of $500^{\circ}C$ and annealing temperature of $700^{\circ}C$ 15sec.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.07b
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• pp.1092-1095
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• 2004

The $ZnGa_2O_4$ phosphor target is synthesized through solid-state reactions as calcine and sintering temperature in order to deposit $ZnGa_2O_4$ phosphor thin film by rf magnetron sputtering system. The $ZnGa_2O_4$ phosphor thin film is deposited on $Pt/Ti/SiO_2/Si$ substrate and prepared $ZnGa_2O_4$ Phosphor thin film is annealed by rapid thermal processor(RTP) at $750^{\circ}C$, 10 sec. The x-ray diffraction patterns of $ZnGa_2O_4$ phosphor target and thin film show the position of (311) main peak. The cathodolumincsccnce(CL) succtrums of $ZnGa_2O_4$ phosphor target show main peak of 360nm and broad bandwidth of about 180nm.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.415.2-415.2
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• 2014

Cost-effective, robust devices for solid-state lighting industry that converts electricity to light revolutionize the current lighting industry. Phosphor materials used in these devices should be synthesized in a low-cost and effective method for use in WLEDs. In this presentation, the synthesis of Eu3+ ions doped BaMoO4 phosphor samples by a facile synthesis process for red component of WLEDs will be shown. The tetragonal phase of the host lattice was substantiated by the X-ray diffraction patterns. The morphological studies were carried out by using a field-emission scanning electron microscope and transmission electron microscope. These confirmed the formation of a shuttle like particles with perpendicular protrusions in the middle of the particle. The photoluminescence (PL) properties exhibited good emission with a high asymmetry ratio when excited with ultraviolet B wavelengths (~ 280-315 nm). The cathodoluminescence (CL) spectra showed similar results to the PL spectra, indicating the rich red emission. The results suggest that this phosphor is a good material as red region component in the development of tri-band UV excitation based WLEDs.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.156-156
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• 2011

Nanocrystalline $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were prepared by solvothermal reaction method for light emitting diode (LED) and field emission display (FED) applications. The XRD patterns of these phosphors confirmed their oxyapatite structure in the hexagonal lattice. The visible luminescence properties of these phosphors were investigated by exciting with ultraviolet (UV) or near-UV light and low voltage electron beam. The photoluminescence (PL) properties of $Ca_2Gd_8Si_6O_{26}$ (CGS) : $Sm^{3+}$ and CGS : $Tb^{3+}/Sm^{3+}$ phosphors were investigated as a function of $Sm^{3+}$ concentration. Cathodoluminescence (CL) properties were examined by changing the acceleration voltage. The CGS : $Sm^{3+}$ showed the dominant orange emission due to the $^4G_{5/2}{\rightarrow}^6H_{7/2}$ transition. The CGS : $Tb^{3+}/Sm^{3+}$ phosphor showed the green, white and orange emissions when excited with 275, 378, and 405 nm wavelengths, respectively. The chromaticity coordinates of these phosphors were comparable to or better than those of standard phosphors for LED or FED devices.

• Journal of the Korean Ceramic Society
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• v.51 no.4
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• pp.350-356
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• 2014

Recently, Chemical Vapor Deposition (CVD) synthetic diamonds have been introduced to the jewelry gem market, as CVD technology has been making considerable advances. Unfortunately, CVD diamonds are not distinguishable from natural diamonds when using the conventional gemological characterization method. Therefore, we need to develop a new identification method that is non-destructive, fast, and inexpensive. In our study, we employed optical microscopy and spectroscopy techniques, including Fourier transform infra-red (FT-IR), UV-VIS-NIR, photoluminescence (PL), micro Raman, and cathodoluminescent (CL) spectroscopy, to determine the differences between a natural diamond (0.30 cts) and a CVD diamond (0.43 cts). The identification of a CVD diamond was difficult when using standard gemological techniques, UV-VIS-NIR, or micro-Raman spectroscopy. However, a CVD diamond could be identified using a FT-IR by the Type II peaks. In addition, we identified a CVD diamond conclusively with the uneven UV fluorescent local bands, additional satellite PL peaks, longer phosphorescence life time, and uneven streaks in the CL images. Our results suggest that using FT-IR combined with UV fluorescent images, PL, and CL analysis might be an appropriate method for identifying CVD diamonds.