• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.163.2-163.2
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• 2014

We report catalytic decomposition of few-layer graphene on an $Au/SiO_x/Si$ surface wherein oxygen is supplied by dissociation of the native $SiO_x$ layer at a relatively low temperature of $400^{\circ}C$. The detailed chemical evolution of the graphene covered $SiO_x/Si$ surface with and without gold during the catalytic process is investigated using a spatially resolved photoelectron emission method. The oxygen atoms from the native $SiO_x$ layer activate the gold-mediated catalytic decomposition of the entire graphene layer, resulting in the formation of direct contact between the Au and the Si substrate. The notably low contact resistivity found in this system suggests that the catalytic depletion of a $SiO_x$ layer could realize a new way to micromanufacture high-quality electrical contact.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.278-278
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• 2009

A photovoltaic device consisting of arrays of radial p-n junction wires enables a decoupling of the requirements for light absorption and carrier extraction into orthogonal spatial directions. Each individual p-n junction wire in the cell is long in the direction of incident light, allowing for effective light absorption, but thin in orthogonal direction, allowing for effective carrier collection. To fabricate radial p-n junction solar cells, p or n-type vertical Si wire cores need to be produced. The majority of Si wires are produced by the vapor-liquid-solid (VLS) method. But contamination of the Si wires by metallic impurities such as Au, which is used for metal catalyst in the VLS technique, results in reduction of conversion efficiency of solar cells. To overcome impurity issue, top-down methods like noble metal catalytic etching is an excellent candidate. We used noble metal catalytic etching methods to make Si wire arrays. The used noble metal is two; Au and Pt. The method is noble metal deposition on photolithographycally defined Si surface by sputtering and then etching in various BOE and $H_2O_2$ solutions. The Si substrates were p-type ($10{\sim}20ohm{\cdot}cm$). The areas that noble metal was not deposited due to photo resist covering were not etched in noble metal catalytic etching. The Si wires of several tens of ${\mu}m$ in height were formed in uncovered areas by photo resist. The side surface of Si wires was very rough. When the distance of Si wires is longer than diameter of that Si nanowires are formed between Si wires. Theses Si nanowires can be removed by immersing the specimen in KOH solution. The optimum noble metal thickness exists for Si wires fabrication. The thicker or the thinner noble metal than the optimum thickness could not show well defined Si wire arrays. The solution composition observed in the highest etching rate was BOE(16.3ml)/$H_2O_2$(0.44M) in Au assisted chemical etching method. The morphology difference was compared between Au and Pt metal assisted chemical etching. The efficiencies of radial p-n junction solar Cells made of the Si wire arrays were also measured.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.214-214
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• 2012

It was reported that oxidative etching of graphene occurs at about $450-550^{\circ}C$ under oxygen atmosphere. We found catalytic breakdown of graphene by Au on the SiOx surface. This catalytic process was investigated using x-ray photoelectron spectroscopy and absorption spectroscopy at 4D PES beamline in PAL. Spectrosopic results suggest that the destruction of graphene is initiated by catalytic interaction between the oxidized gold and carbons in vacancy defects of graphene.

• Journal of Powder Materials
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• v.21 no.1
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• pp.28-33
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• 2014

This paper describes the surface modification effect of a Ti substrate for improved dispersibility of the catalytic metal. Etching of a pure titanium substrate was conducted in 50% $H_2SO_4$, $50^{\circ}C$ for 1 h-12 h to observe the surface roughness as a function of the etching time. At 1 h, the grain boundaries were obvious and the crystal grains were distinguishable. The grain surface showed micro-porosities owing to the formation of micro-pits less than $1{\mu}m$ in diameter. The depths of the grain boundary and micro-pits appear to increase with etching time. After synthesizing the catalytic metal and growing the carbon nano tube (CNT) on Ti substrate with varying surface roughness, the distribution trends of the catalytic metal and grown CNT on Ti substrate are discussed from a micro-structural perspective.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.86-86
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• 2012

The new approaches for silicon solar cell of new concept have been actively conducted. Especially, solar cells with wire array structured radial p-n junctions has attracted considerable attention due to the unique advantages of orthogonalizing the direction of light absorption and charge separation while allowing for improved light scattering and trapping. One-dimenstional semiconductor nano/micro structures should be fabricated for radial p-n junction solar cell. Most of silicon wire and/or pillar arrays have been fabricated by vapour-liquid-solid (VLS) growth because of its simple and cheap process. In the case of the VLS method has some weak points, that is, the incorporation of heavy metal catalysts into the growing silicon wire, the high temperature procedure. We have tried new approaches; one is electrochemical etching, the other is noble metal catalytic etching method to overcome those problems. In this talk, the silicon pillar formation will be characterized by investigating the parameters of the electrochemical etching process such as HF concentration ratio of electrolyte, current density, back contact material, temperature of the solution, and large pre-pattern size and pitch. In the noble metal catalytic etching processes, the effect of solution composition and thickness of metal catalyst on the etching rate and morphologies of silicon was investigated. Finally, radial p-n junction wire arrays were fabricated by spin on doping (phosphor), starting from chemical etched p-Si wire arrays. In/Ga eutectic metal was used for contact metal. The energy conversion efficiency of radial p-n junction solar cell is discussed.

• 한국연소학회:학술대회논문집
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• 2006.10a
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• pp.235-241
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• 2006

Catalytic combustion is one of the suitable methods for micro power source due to high energy density and no flame quenching. Catalyst loading in the micro structured combustion chamber is one of the most important issues in the development of micro catalytic combustors. In this research, to coat catalyst on the chamber wall, two methods were investigated. First, $Al_2O_3$ was selected as a support of Pt and $Pt/Al_2O_3$ was synthesized through the alumina sol-gel procedure. To improve the coating thickness and adhesion between catalyst and substrate, heat resistant and water solvable organic-inorganic hybrid binder was used. Porous silicon was also investigated as a catalyst support for platinum. Through the parametric studies of current density and etching time, fabrication process of $1{\sim}2{\mu}m$ of diameter and about $25{\mu}m$ depth pores was confirmed. Coated substrates were test in the micro channel combustor which was fabricated by the wet etching and machining of SUS 304. Using $Pt/Al_2O_3$ coated substrate and Pt coated porous silicon substrate, conversion rate of fuel was over 95% for $H_2$/Air premixed gas.

• Journal of the Microelectronics and Packaging Society
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• v.8 no.1
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• pp.13-18
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• 2001

Carbon nanotubes (CNTs) were grown on Ni-coated glass substrates by catalytic chemical vapor depositors (CVD) using RF plasma under $600^{\circ}C$. Various types of CNTs were obtained by different growth temperature, etching period and thickness of Ni catalyst. $NH_3$ or $H_2$ gas was used as a etching gas, then $C_2H_2$ gas was flowed as carbon source. Vertically aligned CNTs with diameter of 150 nm and length of 3 $\mu\textrm{m}$ were observed by SEM. CNTs synthesized by catalytic CVD using RF plasma should be expected to FED emitter.

• Journal of the Korean Society of Combustion
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• v.11 no.2
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• pp.7-14
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• 2006

Catalytic combustion is one of the suitable methods for micro power source due to high energy density and it can be applied to micro structured chamber without consideration of quenching since it is flameless combustion. Catalyst loading in the micro structured combustion chamber is one of the most important issues in the development of micro catalytic combustors. In this research, to coat catalyst on the chamber wall, two methods were investigated. First, $Al_2O_3$ was selected as a support of Pt and $Pt/Al_2O_3$ was synthesized through the alumina sol-gel procedure. To improve the coating thickness and adhesion between catalyst and substrate, heat resistant and water solvable organic-inorganic hybrid binder was used. Porous silicon was also investigated as a catalyst support for platinum. Through the parametric studies of current density and etching time, fabrication process of $1{\sim}2{\mu}m$ of diameter and about $25{\mu}m$ depth pores was confirmed. Coated substrates were test in the micro channel combustor which was fabricated by the wet etching and machining of SUS 304. Using $Pt/Al_2O_3$ coated substrate and Pt coated porous silicon substrate, conversion rate of fuel was over 95 % for $H_2/Air$ premixed gas.

• Journal of Environmental Science International
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• v.22 no.8
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• pp.1019-1027
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• 2013

Sulfur hexa-fluoride has been used as a etching gas in semiconductor industry. From the globally environmental issues, it is urgent to control the emissions of this significant greenhouse gas. The main objective of this experimental investigation was to find the effective catalyst for $SF_6$ decomposition. The precursor catalyst of hexa-aluminate was prepared to investigate the catalytic activity and stability. The precursor catalyst of hexa-aluminate was modified with Ni to enhance the catalytic activities and stability. The catalytic activity for $SF_6$ decomposition increased by the addition of Ni and maximized at 6wt% addition of Ni. The addition of 6wt% Ni in precursor catalyst of hexa-aluminate improved the resistant to the HF and reduced the crystallization and phase transition of catalyst.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.62 no.6
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• pp.782-785
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• 2013

Multi-walled carbon nanotubes were synthesized on Ni catalyst using thermal chemical vapor deposition. By introducing ammonia gas during the CNT synthesis process, clean and vertically aligned CNTs without impurities could be prepared. As the ammonia gas increased a partial pressure of hydrogen in the mixed gas during the CNT synthesis process, we could control the CNT synthesis rate appropriately. As the ammonia gas has an etching ability, amorphous carbon species covering the catalyst particles were effectively removed. Therefore catalyst particles could maintain their catalytic state actively during the synthesis process. Finally, we could obtain clean and vertically aligned CNTs by introducing $NH_3$ gas during the CNT synthesis process.