• Journal of the Korea institute for structural maintenance and inspection
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• v.23 no.6
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• pp.92-98
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• 2019

In this study, we developed a repair material incorporating PVA powder resin and nylon fiber into cemented carbide used in the existing field to improve adhesion performance and water tightness with existing concrete. Flexural behavior evaluation was performed. The main experimental variables were PVA powder resin, nylon fiber mixing rate and damage type, and performance tests were conducted to evaluate compressive strength and flexural behavior after repairing materials. It was found that all formulations fully satisfied the required performance of the repair material. The flexural strength test results of the repaired tube specimens showed that the performance of the repaired materials was maximized when the nylon fiber was added and the PVA powder was added in an appropriate amount. The flexural behavior of all the specimens showed the flexural behavior of the structural members with a low rebar ratio, suggesting that the amount of iron wire in the domestic fume pipe was somewhat insufficient. That is, it was confirmed that the amount of reinforcement of the steel wire was somewhat small, so that the concrete was cracked before the behavior of the concrete and the steel wire reached the extreme state, and the concrete was immediately destroyed beyond the tensile strength of the concrete.

• Journal of Periodontal and Implant Science
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• v.47 no.2
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• pp.116-131
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• 2017

Purpose: The entry of bacteria or harmful substances through the epithelial seal of human gingival keratinocytes (HGKs) in the junctional epithelium (JE) is blocked by specialized intercellular junctions such as E-cadherin junctions (ECJs). However, the influence of roughened substrates, which may occur due to apical migration of the JE, root planing, or peri-implantitis, on the development of the ECJs of HGKs remains largely unknown. Methods: HGKs were cultured on substrates with varying levels of roughness, which were prepared by rubbing hydrophobic polystyrene dishes with silicon carbide papers. The activity of c-Jun N-terminal kinase (JNK) was inhibited with SP600125 or by transfection with JNK short hairpin RNA. The development of intercellular junctions was analyzed using scanning electron microscopy or confocal laser scanning microscopy after immunohistochemical staining of the cells for E-cadherin. The expression level of phospho-JNK was assessed by immunoblotting. Results: HGKs developed tight intercellular junctions devoid of wide intercellular gaps on smooth substrates and on rough substrates with low-nanometer dimensions (average roughness $[Ra]=121.3{\pm}13.4nm$), although the ECJs of HGKs on rough substrates with low-nanometer dimensions developed later than those of HGKs on smooth substrates. In contrast, HGKs developed short intercellular junctions with wide intercellular gaps on rough substrates with mid- or high-nanometer dimensions ($Ra=505.3{\pm}115.3nm$, $867.0{\pm}168.6nm$). Notably, the stability of the ECJs was low on the rough substrates, as demonstrated by the rapid destruction of the cell junction following calcium depletion. Inhibition of JNK activity promoted ECJ development in HGKs. JNK was closely associated with cortical actin in the regulation of ECJs in HGKs. Conclusions: These results indicate that on rough substrates with nanometer dimensions, the ECJs of HGKs develop slowly or defectively, and that this effect can be reversed by inhibiting JNK.

• Journal of IKEEE
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• v.22 no.1
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• pp.180-184
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• 2018

Gallium oxide ($Ga_2O_3$) and silicon carbide (SiC) are the material with the wide band gap ($Ga_2O_3-4.8{\sim}4.9eV$, SiC-3.3 eV). These electronic properties allow high blocking voltage. In this work, we investigated the characteristic of $Ga_2O_3$ and 4H-SiC vertical depletion-mode metal-oxide-semiconductor field-effect transistors. We demonstrated that the blocking voltage and on-resistance of vertical DMOSFET is dependent with structure. The structure of $Ga_2O_3$ and 4H-SiC vertical DMOSFET was designed by using a 2-dimensional device simulation (ATLAS, Silvaco Inc.). As a result, 4H-SiC and $Ga_2O_3$ vertical DMOSFET have similar blocking voltage ($Ga_2O_3-1380V$, SiC-1420 V) and then when gate voltage is low, $Ga_2O_3-DMOSFET$ has lower on-resistance than 4H-SiC-DMOSFET, however, when gate voltage is high, 4H-SiC-DMOSFET has lower on-resistance than $Ga_2O_3-DMOSFET$. Therefore, we concluded that the material of power device should be considered by the gate voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.251-251
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• 2016

For several decades, industrial processes consume a huge amount of raw water for various objects that consequently results in the generation of large amounts of wastewater. Wastewaters are consisting of complex mixture of different inorganic and organic compounds and some of them can be toxic, hazardous and hard to degrade. These effluents are mainly treated by conventional technologies such are aerobic and anaerobic treatment and chemical coagulation. But, these processes are not suitable for eliminating all hazardous chemical compounds form wastewater and generate a large amount of toxic sludge. Therefore, other processes have been studied and applied together with these techniques to enhance purification results. These include photocatalysis, absorption, advanced oxidation processes, and ozonation, but also have their own drawbacks. In recent years, electrochemical techniques have received attention as wastewater treatment process that could be show higher purification results. Among them, boron doped diamond (BDD) attract attention as electrochemical electrode due to good chemical and electrochemical stability, long lifetime and wide potential window that necessary properties for anode electrode. So, there are many researches about high quality BDD on Nb, Ta, W and Si substrates, but, their application in effluents treatment is not suitable due to high cost of metal and low conductivity of Si. To solve these problems, Ti has been candidate as substrate in consideration of cost and property. But there are adhesion issues that must be overcome to apply Ti as BDD substrate. Al, Cu, Ti and Nb thin films were deposited on Ti substrate to improve adhesion between substrate and BDD thin film. In this paper, BDD films were deposited by hot filament chemical vapor deposition (HF-CVD) method. Prior to deposition, cleaning processes were conducted in acetone, ethanol, and isopropyl alcohol (IPA) using sonification machine for 7 min, respectively. And metal layer with the thickness of 200 nm were deposited by DC magnetron sputtering (DCMS). To analyze microstructure X-ray diffraction (XRD, Bruker gads) and field emission scanning electron microscopy (FE-SEM, Hitachi) were used. It is confirmed that metal layer was effective to adhesion property and improved electrode property. Electrochemical measurements were carried out in a three electrode electrochemical cell containing a 0.5 % H2SO4 in deionized water. As a result, it is confirmed that metal inter layer heavily effect on BDD property by improving adhesion property due to suppressing formation of titanium carbide.

• Composites Research
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• v.30 no.5
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• pp.323-330
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• 2017

In this study, multiscale analysis in which the information obtained from molecular dynamics simulation is applied to the continuum mechanics level is conducted to investigate the effects of clustering of silicon carbide nanoparticles reinforced into polypropylene matrix on mechanical behavior of nanocomposites. The elastic behavior of polymer nanocomposites is observed for various states of nanoparticulate agglomeration according to the model reflecting the degradation of interphase properties. In addition, factors which mainly affect the mechanical behavior of the nanocomposites are identified, and new index 'clustering density' is defined. The correlation between the clustering density and the elastic modulus of nanocomposites is understood. As the clustering density increases, the interfacial effect decreased and finally the improvement of mechanical properties is suppressed. By considering the random distribution of the nanoparticles, the range of elastic modulus of nanocomposites for same value of clustering density can be investigated. The correlation can be expressed in the form of exponential function, and the mechanical behavior of the polymer nanocomposites can be effectively predicted by using the nanoparticulate clustering density.

• Journal of the Korean Applied Science and Technology
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• v.34 no.2
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• pp.327-337
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• 2017

A continuous low temperature ($510^{\circ}C{\sim}530^{\circ}C$) pyrolysis experiment in a pilot-scale of 85.3 kg/hr was carried out by the mixed feedstock of half dried digested sewage sludge and waste plastics. As a result, the amount of pyrolysis gas generated was maximum 68.3% of input dry mass and scored $40.9MJ/Nm^3$ of lower heating value (LHV), and the percentage of air inflow caused by continuous pyrolysis was 19.6%. The oil was produced 4.2% of the input dry mass, and the LHV was 32.5 MJ/kg. The sulfur and chlorine contents, which could cause corrosion of the facility, were found to be 0.2% or more respectively. The carbide generated was 27.5% of the input dry mass which shows LHV of 10.2 MJ/kg, and did not fall under designated waste from the elution test. The concentration of carbon monoxide, sulfur oxides and hydrogen cyanide of emitted flu gas from pyrolysis gas combustion was especially high, and dioxin (PCDDs/DFs) was within the legal standards as $0.034ng-TEQ/Sm^3$. Among the 47 water pollutant contents of waste water generated from dry flue gas condensation, several contents such as total nitrogen, n-H extract and cyanide showed high concentration. Therefore, the merge treatment in the sewage treatment plants after pre-treatment could be considered.

• Composites Research
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• v.30 no.2
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• pp.116-125
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• 2017

The purpose of this study is to develop silicon carbide fiber showing an excellent mechanical properties under highly oxidative conditions at high temperature. Polycarbosilane(PCS) as a preceramic precursor was used for making the SiC fiber. PCS fiber was taken by melt spinning method followed by melting the PCS at $300{\sim}350^{\circ}C$ in N2 gas. The Curing of PCS fiber was carried out in air oxygen chamber, prior to high temperature pyrolysis. Degree of cure was calculated by characteristic peak's ratio of Si-H to $Si-CH_3$ in FT-IR spectra before and after curing of PCS fiber. The properties of SiC fiber was affected greatly by the degree of cure. The SiC fiber produced by controlling fiber tension during heat treatment showed good properties. The SiC fiber exposed to $1000^{\circ}C$ at air from 1 min. up to maximum 50 hrs showed around 60% reduction in tensile strength. We found that large amount of carbon content on the fiber surface after long-term exposure has resulted in lower tensile strength.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.24.1-24.1
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• 2009

Tantalum carbo-nitride($T_aC_xN_y$) films were deposited with chemical vapor deposition(CVD) using tert-butylimido tris-diethylamido tantalum (TBTDET, $^tBu-N=Ta-(NEt_2)_3$, $Et=C_2H_5$, $^tBu=C(CH_3)_3$) between $350^{\circ}C$ and $600^{\circ}C$ with argon as a carrier gas. Fourier transform infrared (FT-IR)spectroscopy was used to study the thermal decomposition behavior of TBTDET in the gas phase. When the temperature was increased, C-H and C-N bonding of TBTDET disappeared and the peaks of ethylene appeared above $450^{\circ}C$ in the gas phase. The growth rate and film density of $T_aC_xN_y$ film were in the range of 0.1nm/min to 1.30nm/min and of $8.92g/cm^3$ to $10.6g/cm^3$ depending on the deposition temperature. $T_aC_xN_y$ films deposited below $400^{\circ}C$ were amorphous and became polycrystal line above $500^{\circ}C$. It was confirmed that the $T_aC_xN_y$ film was a mixture of TaC, graphite, $Ta_3N_5$, TaN, and $Ta_2O_5$ phases and the oxide phase was formed from the post deposition oxygen uptake. With the increase of the deposition temperature, the TaN phase was increased over TaC and $Ta_3N_5$ and crystallinity, work function, conductivity and density of the film were increased. Also the oxygen uptake was decreased due to the increase of the film density. With the increase of the TaC phase in $T_aC_xN_y$ film, the work function was decreased to 4.25eV and with the increase of the TaN phase in $T_aC_xN_y$ film,it was increased to 4.48eV.

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.289-293
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• 2010

Silicon quantum dots (Si QDs) in a superlattice for high efficiency tandem solar cells were fabricated by magnetron rf sputtering and their characteristics were investigated. SiC/$Si_{1-x}C_x$ superlattices were deposited by co-sputtering of Si and C targets and annealed at $1000^{\circ}C$ for 20 minutes in a nitrogen atmosphere. The Si QDs in Si-rich layers were verified by transmission electron microscopy (TEM) and X-ray diffraction. The size of the QDs was observed to be 3-6 nm through high resolution TEM. Some crystal Si and -SiC peaks were clearly observed in the grazing incident X-ray diffractogram. Raman spectroscopy in the annealed sample showed a sharp peak at $516\;cm^{-1}$ which is an indication of Si QDs. Based on the Raman shift the size of the QD was estimated to be 4-6 nm. The volume fraction of Si crystals was calculated to be about 33%. The change of the FT-IR absorption spectrum from a Gaussian shape to a Lorentzian shape also confirmed the phase transition from an amorphous phase before annealing to a crystalline phase after annealing. The optical absorption coefficient also decreased, but the optical band gap increased from 1.5 eV to 2.1 eV after annealing. Therefore, it is expected that the optical energy gap of the QDs can be controlled with growth and annealing conditions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.113-114
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• 2009

Silicon carbide is one of the most attractive and promising wide band-gap semiconductor material with excellent physical properties and huge potential for electronic applications. Up to now, the most successful method for growth of large SiC crystals with high quality is the physical vapor transport (PVT) method [1, 2]. Since further reduction of defect densities in larger crystal are needed for the true implementation of SiC devices, many researchers are focusing to improve the quality of SiC single crystal through the process modifications for SiC bulk growth or new material implementations [3, 4]. It is well known that for getting high quality SiC crystal, source materials with high purity must be used in PVT method. Among various source materials in PVT method, a SiC powder is considered to take an important role because it would influence on crystal quality of SiC crystal as well as optimum temperature of single crystal growth, the growth rate and doping characteristics. In reality, the effect of powder on SiC crystal could definitely exhibit the complicated correlation. Therefore, the present research was focused to investigate the quality difference of SiC crystal grown by conventional PVT method with using various SiC powders. As shown in Fig. 1, we used three SiC powders with different particles size. The 6H-SiC crystals were grown by conventional PVT process and the SiC seeds and the high purity SiC source materials are placed on opposite side in a sealed graphite crucible which is surrounded by graphite insulation[5, 6]. The bulk SiC crystal was grown at $2300^{\circ}C$ of the growth temperature and 50mbar of an argon pressure. The axial thermal gradient across the SiC crystal during the growth is estimated in the range of $15\sim20^{\circ}C/cm$. The chemical etch in molten KOH maintained at $450^{\circ}C$ for 10 min was used for defect observation with a polarizing microscope in Nomarski mode. Electrical properties of bulk SiC materials were measured by Hall effect using van der Pauw geometry and a UV/VIS spectrophotometer. Fig. 2 shows optical photographs of SiC crystal ingot grown by PVT method and Table 1 shows electrical properties of SiC crystals. The electrical properties as well as crystal quality of SiC crystals were systematically investigated.