• 대한전기학회논문지:전기기기및에너지변환시스템부문B
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• 제51권10호
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• pp.581-586
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• 2002

To improve the current waveform of diode rectifiers, we propose a new operating principle for the voltage-doubler diode rectifiers. In the conventional voltage-doubler rectifier circuit, relatively large capacitors are used to boost the output voltage, while the proposed circuit uses smaller ones and a small reactor not to boost the output voltage but improve the input current waveform. A circuit design method is shown by experimentation and confirmed simulation. The experimental results of the proposed diode rectifier satisfies the harmonic guide lines. A high input power factor of 97(%) and an efficiency of 98[%] are also obtained. The new rectifier with no controlled switches meet the harmonic guide lines, resulting in a simple, reliable and low-cost at-to dc converters in comparison with the boost-type current-improving circuits. This paper proposes a nonlinear impedance circuit composed by diodes and inductors or capacitors. This circuit needs no control circuits and switches, and the impedance value is changed by the polarity of current or voltage. And this paper presents one of these applications to improve the input current of capacitor input diode rectifiers. The rectifier using the nonlinear impedance circuit is constructed with four diodes and four capacitors in addition to the conventional rectifiers, that is, it has eight diodes and five capacitors, including a DC link capacitor. It makes harmonic components of the input current reduction and the power factor improvement. Half pulse-width modulated (HPWM) inverter was explained compared with conventional pulse width modulated(PWM) inverter. Proposed HPWM inverter eliminated dead-time by lowering switching loss and holding over-shooting.

• Advances in Energy Research
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• 제5권3호
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• pp.219-226
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• 2017

Electrochemical double layer capacitors (EDLCs) have received a tremendous interest due to their suitability for diverse applications. They have been fabricated using different carbon based electrodes including activated carbons, single walled/multi walled carbon nano tubes. But, graphite which is one of the natural resources in Sri Lanka has not been given a considerable attention towards using for EDLCs though it is a famous carbon material. On the other hand, EDLCs are well reported with various liquid electrolytes which are associated with numerous drawbacks. Gel polymer electrolytes (GPE) are well known alternative for liquid electrolytes. In this paper, it is reported about an EDLC fabricated with a nano composite polyethylene oxide based GPE and two Sri Lankan graphite based electrodes. The composition of the GPE was [{(10PEO: $NaClO_4$) molar ratio}: 75wt.% PC] : 5 wt.% $TiO_2$. GPE was prepared using the solvent casting method. Two graphite electrodes were prepared by mixing 85% graphite and 15% polyvinylidenefluoride (PVdF) in acetone and casting n fluorine doped tin oxide glass plates. GPE film was sandwiched in between the two graphite electrodes. A non faradaic charge discharge mechanism was observed from the Cyclic Voltammetry study. GPE was stable in the potential windows from (-0.8 V-0.8 V) to (-1.5 V-1.5 V). By increasing the width of the potential window, single electrode specific capacity increased. Impedance plots confirmed the capacitive behavior at low frequency region. Galvanostatic charge discharge test yielded an average discharge capacity of $0.60Fg^{-1}$.

• 한국재료학회지
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• 제24권1호
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• pp.37-42
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• 2014

Well-distributed ruthenium (Ru) nanoparticles decorated on porous carbon nanofibers (CNFs) were synthesized using an electrospinning method and a reduction method for use in high-performance elctrochemical capacitors. The formation mechanisms including structural, morphological, and chemical bonding properties are demonstrated by means of field emission scanning electron microscopy (FESEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and X-ray photoelectron spectroscopy (XPS). To investigate the optimum amount of the Ru nanoparticles decorated on the porous CNFs, we controlled three different weight ratios (0 wt%, 20 wt%, and 40 wt%) of the Ru nanoparticles on the porous CNFs. For the case of 20 wt% Ru nanoparticles decorated on the porous CNFs, TEM results indicate that the Ru nanoparticles with ~2-4 nm size are uniformly distributed on the porous CNFs. In addition, 40 wt% Ru nanoparticles decorated on the porous CNFs exhibit agglomerated Ru nanoparticles, which causes low performance of electrodes in electrochemical capacitors. Thus, proper distribution of 20 wt% Ru nanoparticles decorated on the porous CNFs presents superior specific capacitance (~280.5 F/g at 10 mV/s) as compared to the 40 wt% Ru nanoparticles decorated on the porous CNFs and the only porous CNFs. This enhancement can be attributed to the synergistic effects of well-distributed Ru nanoparticles and porous CNF supports having high surface area.

• 전력전자학회논문지
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• 제8권6호
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• pp.469-477
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• 2003

본 논문은 플라잉 커패시터 멀티-레벨 인버터의 가장 큰 문제점인 플라잉 커패시터 전압 불균형의 새로운 해결방법으로 캐리어 로테이션(Carrier-Rotation) PWM 기법을 제안한다. 제안된 기법은 모든 스위치가 한번의 스위칭동작을 하는 동안 플라잉 커패시터의 충전과 방전에 관계된 레그 전압 리던던시(redundancy)를 같은 비율로 사용하여 플라잉 커패시터 전압을 일정하게 유지하며, 전압의 변동폭이 최소가 되도록 제어한다 이 방법은 각 캐리어의 배치가 모두 통상이므로 출력 전압의 고조파 성분이 저감되며, 또한 모든 스위치의 스위칭 주파수가 같으므로 스위치 이용률이 개선되는 특성을 갖는다. 제안된 기법을 플라잉 커패시터 3-레벨 인버터에 적용하여 상세히 분석하고, 3-레벨 이상에 적용할 수 있도록 일반화한다. 제안된 기법의 타당성은 실험 결과로 검증된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.45-45
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• 2007

Capacitors among the embedded passive components are most widely studied because they are the major components in terms of size and number and hard to embed compared with resistors and inductors due to the more complicated structure. To fabricate a capacitor-embedded PCB for in-line process, it is essential to adopt a low temperature process (<$200^{\circ}C$). However, high dielectric materials such as ferroelectrics show a low permittivity and a high dielectric loss when they are processed at low temperatures. To solve these contradicting problems, we studied BMN materials as a candidate for dielectric capacitors. processed at PCB-compatible temperatures. The morphologies of BMN thin films were investigated by AFM and SEM equipment. The electric properties (C-F, I-V) of Pt/BMN/Cu/polymer were evaluated using an impedance analysis (HP 4194A) and semiconductor parameter analyzer (HP4156A). $Bi_2Mg_{2/3}Nb_{4/3}O_7$(BMN) thin films deposited on copper clad laminate substrates by sputtering system as a function of Ar/$O_2$ flow rate at room temperature showed smooth surface morphologies having root mean square roughness of approximately 5.0 nm. 200-nm-thick films deposited at RT exhibit a dielectric constant of 40, a capacitance density of approximately $150\;nF/cm^2$, and breakdown voltage above 6 V. The crystallinity of the BMN thin films was studied by TEM and XRD. BMN thin film capacitors are expected to be promising candidates as embedded capacitors for printed circuit board (PCB).

• 한국재료학회지
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• 제11권2호
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• pp.151-154
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• 2001

상부전극, Pt, Ir, 그리고 $IrO_2$, 에 따라 수소 열처리전과 후, 그리고 회복열처리시 누설전류특성을 고찰하였다. Pt/PLZT/Pt 케페시터는 수소열처리 후에 다시 회복열처리를 수행하면 완전히 이력곡선의 회복을 보이며 또한 피로특성도 거의 회복 된다. Pt과 IrO$_2$ 상부전극의 경우의 진 누설전류 특성은 열처리조건에 관계없이 강한 시간 의존성을 갖는 space-charge influenced injection모델에 적합하다. 반면에 Ir 상부전극의 경우는 Ir과 PLZT 사이의 계면에 헝성된 전도성 상인 $IrO_2$로 인해 높은 누설전류 밀도를 보이면서 relaxation current 영역이 없이 steady state 영역을 보이는, 주로 Schottky barrier 모델에 의해 설명된다.

• 한국인터넷방송통신학회논문지
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• 제23권4호
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• pp.59-64
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• 2023

본 논문은 전자기기에 사용되는 전원의 노이즈 저감을 위한 전도성(Conducted) EMI 필터의 경험적 설계를 통하여 제안하였다. 제안된 구조는 A형, B형, C형, D형의 구조를 설계하였으며, 다양한 X-커패스터와, Y-커패스터, Air-인덕터로 LC 네트워크 사용으로 전도성 노이즈 저감을 확인하였다. L1, L2는 10[μH]를 사용하였으며, C1, C2는 4.7[nF]를 사용하였다. 공통모드(Common Mode)용 L3는 13[μH]를 사용하였으며, C5, C6, C7은 10[nF]을 사용하여 설계하였다. 설계된 EMI 필터의 측정된 삽입손실 값은 3.2MHz에서 -74.4[dB], 4MHz에서 -75.4[dB], 13.56MHz에서 -75.3[dB]로 나타났다. 따라서 제안한 EMI 필터는 다양한 전자기기에 사용되는 전원 노이즈 저감에 이용될 것이다.

• 한국표면공학회지
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• 제42권5호
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• pp.227-231
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• 2009

The niobium capacitor showed somewhat more unstable characteristics than the commercial tantalum capacitors, but is nonetheless considered applicable as a future substitute for tantalum capacitors. In this study, niobium powder was fabricated by metallothermic reduction process using $K_2NbF_7$ as the raw materials, KCl and KF as the diluents and Na as the reducing agent. The niobium particle size greatly decreased from 0.7um to 0.2 um as the amount of diluent increased. However if a higher surface area of powder is required, more diluents need to be used in the said method in order to produce niobium powder. The niobium powder morphology and particle size are very sensitive to a amount of sodium excess. The particle size of niobium powder increased with a increasing amount of sodium excess. When more diluent and sodium are used, the niobium powder will be contaminated with more impurities such as Fe, Cr, Ni so on.

• 한국결정성장학회지
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• 제14권3호
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• pp.90-94
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• 2004

The variation of electrical properties of (Ba,Sr)$TiO_3$ [BST] thin films for Metal-Insulator-Semiconductor (MIS) capacitors was investigated. BST thin films were deposited on p-Si(100) substrates by the RF magnetron sputtering with temperature range of 500~$600^{\circ}C$. The dielectric properties of MIS capacitors consisting of AUBST/$SiO_2$/Si sandwich structure were measured for various conditions. We examined the characteristics of MIS capacitor with various oxygen pressure, substrate temperature and (Ba+Sr)/Ti ratio. It was found that the leakage current was reduced in MIS capacitor with high quality $SiO_2$ layer was grown on bare p-Si substrate by thermal oxidation. The BST MIS structure showed relatively high capacitance even though it is the combination of high-dielectric BST thin films and $SiO_2$ layer. The charge state densities of the MIS capacitors and Current-voltage characteristics of the MIS capacitor were investigated. By applying $SiO_2$ layer between BST thin films and Si substrate, low leakage current of $10^{-10}$ order was observed.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 학술대회 논문집 일렉트렛트 및 응용기술연구회
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• pp.72-76
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• 2003

The $Sr_{0.7}Bi_{2.6}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/$TiO_2/SiO_2$/Si) using RF magnetron sputtering method. The structural and electrical properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealed atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40[{\mu}C/cm^2]$ and 30[kV/cm] respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.