• Current Photovoltaic Research
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• 제1권1호
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• 전자공학회논문지A
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• 제29A권2호
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• pp.55-62
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• 1992

Polycrystalline silicon ingots were manufactured using the casting method for polycrystalline silicon solar cells. These ingots were cut into wafers and ten n$^{+}$p type solar cells were made through the following simple process` surface etching, n$^{+}$p junction formation, metalization and annealing. For the grain boundary passivation, the samples were oxidized in O$_2$ for 5 min. at 80$0^{\circ}C$ prior to diffusion in Ar for 100 min. at 95$0^{\circ}C$. The conversion efficiency of polycrystalline silicon solar cells made from these wafers showed about 70-80% of those of the single crystalline silicon solar cell and superior conversion efficiency, compared to those of commercial polycrystalline wafers of Wacker Chemie. The maximum conversion efficiency of our wafers was indicated about 8%(without AR coating) in spite of such a simple fabrication method.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2007년도 추계학술발표대회 및
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• pp.139.2-139.2
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• 2007

• 한국태양에너지학회 논문집
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• 제32권4호
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• pp.51-58
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• 2012

This study aims to analyze characteristics of Cell surface temperature and generated power performance for improving PV(Photovoltaic) system condition according to the cell opening ratio of transparent crystal PV system at Spandrel of curtain-wall. For this purpose, alternatives were classified for eight different cases that opening ratio of transparent crystal PV system varied from 0% to 70%, which was used by simulation tool, EnergyPlus. As results, it turned out that increasing opening ratio of transparent crystal PV system led higher PV surface temperature, back-sheet type was thus the most advantageous for decreasing surface temperature, annual generating efficiency, and annual accumulated generating power. Consequently, blocking off air space from outside insolation can advantageously keep to be better condition for generated power performance.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 춘계학술대회 및 기술 세미나 논문집 디스플레이 광소자
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• pp.57-58
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• 2008

Microcrystalline (${\mu}c$) silicon thin films were prepared on glass by plasma-enhanced-chemical-vapor-deposition (PECVD) at various substrate temperature, and dilution ratio of $H_2$ with $SiH_4$. The structural and optical properties of. the ${\mu}c-Si$ thin films were investigated using XRD and UV-VIS spectrophotometer. The ${\mu}c-Si$ thin film with 42 nm grain size was grown at optimal condition of 2.5 Torr, spacing between electrodes of 3cm, deposition time of 3000s, RF power of 200W, substrate temperature of $350^{\circ}C$, $SiH_4$ ($20%SiH_4$+80%He) of 50sccm, and $H_2$ of 100sccm.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1988년도 전기.전자공학 학술대회 논문집
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• pp.792-795
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• 1988

Titanium dioxide antireflection (AR) Coating, which is deposited on Si substrates using an organotitanium solution by the spinning technique, has been studied. The coated films on Si substrates were subsequently heated to $450^{\circ}C$. The thickness and index of refraction of films were varied continuousely from $740{\AA}$ to $1380{\AA}$ and from 1.7 to 2.1 respectively as a function of heat treatment temperature and time. Silicon solar cells AR-coated by the spinning technique showed as much as 31% improvement in conversion efficiency over the uncoated cell.

• Current Photovoltaic Research
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• 제1권2호
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• pp.73-81
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• 2013

Heterojunction with Intrinsic Thin-layer (HIT) solar cells are currently an important subject in industrial trends for thinner solar cell wafers due to the low-temperature of production processes, which is around $200^{\circ}C$, and due to their high-efficiency of 24.7%, as reported by the Panasonic (Sanyo) group. The use of thinner wafers and the enhancement of cell performance with fabrication at low temperature have been special interests of the researchers. The fundamental understanding of the band bending structures, choice of materials, fabrication process, and nano-scale characterization methods to provide necessary understanding of the interface passivation mechanisms, emitter properties, and requirements for transparent oxide conductive layers is presented in this review. This information should be used for the performance characterization of the developing technologies for HIT solar cells.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.593-596
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• 1999

This paper presents a process optimization of antireflectiun (AR) coating on crystalline Si solar cells. Theoretical and experimental investigations were performed on a doble-layer AR(DLAR) coating of MgF$_2$/CeO$_2$, We investigated CeO$_2$ films as an All layer because they hale a proper refractive index of 2.46 and demonstrate the same lattice constant as Si substrate. RF sputter grown CeO$_2$ film showed strong dependence on a deposition temperature. The CeO$_2$ film deposited at 400 $^{\circ}C$ exhibited a strong (111) preferred orientation and the lowest surface roughness of 6.87 $\AA$. Refractive index of MgF$_2$ film was measured as 1.386 for the most of growth temperature. An optimized DLAR coating showed a reflectance as low as 2.04 % in the wavelengths ranged from 0.4 7m to 1.1 7m. We achieved the efficiencies of solar cells greater than 15% with 3.12 % improvement with DLAR coatings . Further details on MgF$_2$, CeO$_2$ films, and cell fabrication Parameters are presented in this paper.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.1015-1020
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• 2012

Resistance of the front electrode is the highest proportion of the ingredients of the series resistance in crystalline silicon solar cell. While resistance of the front electrode is decreased with larger area, it induces the optical loss, causing the conversion efficiency drop. Therefore the front electrode with high aspect ratio increasing its height and decreasing is necessary for high-efficiency solar cell in considering shadowing loss and resistance of front electrode. In this paper, we used the screen printing method to form high aspect ratio electrode by multiple printing. Screen printing is the straightforward technology to establish the electrodes in silicon solar cell fabrication. The several printed front electrodes with Ag paste on silicon wafer showed the significantly increased height and slightly widen finger. As a result, the resistance of the front electrode was decreased with multiple printing even if it slightly increased the shadowing loss. We showed the improved electrical characteristics for c-Si solar cell with repeatedly printed front electrode by 0.5%. It lays a foundation for high efficiency solar cell with high aspect ratio electrode using screen printing.