• Title/Summary/Keyword: c-plane

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Non-polar and Semi-polar InGaN LED Growth on Sapphire Substrate

  • Nam, Ok-Hyeon
    • Proceedings of the Korean Vacuum Society Conference
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    • 2010.02a
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    • pp.51-51
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    • 2010
  • Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

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The Variation in Chromaticity of Optical System having the Truncated Incident Beam (입사광의 단락된 정도에 따른 광학계의 색도 변화)

  • Park, Seong Jong;Chung, Chang Sub;Sim, Sang Hyun
    • Journal of Korean Ophthalmic Optics Society
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    • v.5 no.1
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    • pp.13-18
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    • 2000
  • In this paper, we use the C light which is a daylight and consider the incident beam having the Gaussian amplitude. We investigated the illuminance distributions and the variation in chromaticity of optical system having the truncated Gaussian amplitude on the focal plane and along the optical axis using the C light source. We also use the three sensitivity functions of human eye(CIE 1931) for wavelengths which are from 380nm to 780nm. When the truncation grade of incident beam having Gaussian amplitude decreases, the size of central spot on the focal plane and the depth of focus along the optical axis decrease, and the variation in chromaticity on the focal plane and along the axis increases rapidly. As the illuminance on the focal plane decreases the variation in chromaticity of optical system increases rapidly, and as the depth of focus increases the variation in chromaticity of optical system decreases.

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A Study on the Behavior of the Plane Stress Fracture Toughness - About the Compact Tension Specimen- (平面應力 破壞靭性値 擧動에 관한 硏究)

  • 송삼홍;고성위
    • Transactions of the Korean Society of Mechanical Engineers
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    • v.10 no.6
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    • pp.937-946
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    • 1986
  • In this paper, the plane stress fracture toughness of low carbon steel with 3mm thickness is investigated for various specimen widths and crack ratios using the J integral. The experiments is carried out for the compact tension(CT) specimen on an Instron machine. For materials that may be approximated by the Ramberg and Osgood stress strain law, the relevant crack parameter like the J integral and load line displacement are approximately normalized. Crack driving forces in terms of J integral is computed using the above estimation scheme. Abtained results are summarized as follows. (1) The plane stress fracture toughness, J$_{c}$, is almost constant in the range 50-70mm of width. Hence J$_{c}$ can be obtained by using smaller specimen than ASTM standard. (2) Yoon's and Simpson's formular which considers crack growth in obtaining J integral show more consevative J than Rice's and Merkle's (3) J$_{c}$ is almost constant in the range 0.499-0.701 crack ratios tested. J$_{c}$ obtained by using Kumar's formular is 28.14kgf/mm for base metal specimen and 32.51kgf/mm for annealed. (4) Comparison of the prediction with actual experimental measurements by Yoon's formular show good agreement for several different-size specimens.

The Estimation of Activation Energy for Prism Plane SliP {1120} <1100> Dislocation Velocity in Sapphire Single Crystals using Brittle-to-ductile Transition Model (취성-연성 전이 model을 이용한 사파이어 단결정의 prism plane slip {1120} <1100> 전위속도에 대한 활성화에너지 계산)

  • Yun, Seog-Young;Lee, Jong-Young
    • Korean Journal of Materials Research
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    • v.11 no.6
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    • pp.508-511
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    • 2001
  • Experimental studies of the brittle-ductile transition (BDT) for pre-cracked sapphire single crystals were carried out. The BDT temperature in sapphire single crystals were $1000\pm$$25^{\circ}C$ and 1100$\pm$$25^{\circ}C$ at constant strain rate 3.3$\times$$10^{-5}$/sec and 3.3$\times$$10^{-6}$/sec, respectively. With aid of the BDT model, the activation energy for prism plane slip {1120} <1100> dislocation velocity was in the range of 4.6$\pm$2.3eV This activation energy for dislocation velocity with BDT model was compatible with the result of the dislocation velocity (3.8eV) using the etch-pit techniques.

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DFabrication of $GdAlO_3$ Buffer Layers by Sol-Gel Processing (졸-겔법에 의한 $GdAlO_3$ 버퍼층의 제조)

  • Bang, Jae-Cheol
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.7 no.5
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    • pp.801-804
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    • 2006
  • [ $GdAlO_3(GAO)$ ] buffer layer for $YBa_2Cu_3O_{7-{\delta}}(YBCO)$ coated superconductor wire was fabricated by sol-gel processing. Precursor solution was prepared by dissolving 1:1 stoichiometric quantaties of gadolinium nitrate hexahydrate and aluminum nitrate nonahydrate in methanol. The solution was spin-coated on $SrTiO_3(STO)$(100) single crystal substrates and heated at $1000^{\circ}C$ for 2h in wet $N_2-5%\; H_2$, atmosphere. A SEM(scanning electron microscopy) observation of the surface morphology of the GAO layer has shown that it has a faceted morphology indicating epitaxy. It was shown from x-ray diffraction(XRB) that GAO buffer layer was highly c-axis oriented epitaxial thin film with both good out-of-plane($FWHM=0.29^{\circ}$ for the (002) reflection) and in-plane ($FWHM=1.10^{\circ}$ for the {112} reflection) alignment.

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Fabrication and characterization of tilted R-plane sapphire wafer for nonpolar a-plane GaN (경사각을 갖는 비극성 a-GaN용 R-면 사파이어 기판의 제조 및 특성)

  • Kang, Jin-Ki;Kim, Young-Jin
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.21 no.5
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    • pp.187-192
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    • 2011
  • Tilt angle of r-plane wafer is a one of the important factors related with the quality of the GaN epi, so the fine control of the tilt angle is important for the growing of high quality non-polar a-GaN epi. We prepared the R-plane sapphire wafers with slight tilt angles for nonpolar a-plane GaN. The target tilt angles of ${\alpha}$ and ${\beta}$ were 0, -0.1, -0.15, -0.2, -0.4, $-0.6^{\circ}$ and -0.1, 0, $0.1^{\circ}$, respectively. The tilt angles of sliced R-plane sapphire wafers were measured by x-ray and the statistical evaluation of reliability of tilt angles of wafers were performed. The tolerance of the tilt angle was ${\pm}0.03^{\circ}$. R-plane sapphire wafers have relatively large distributions of BOW and TTV data than c-plane sapphire wafers due to the large anisotropy of R-plane. As the tilt angle ${\alpha}$ was increased from -0.1 to $-0.6^{\circ}$, the step widths and heights were decreased from 156 nm to 26 nm and 0.4 nm to 0.2 nm, respectively. The growth and qualities of GaN epi seems to be largely affected by the change of step structure of R-plane sapphire wafers with tilt angle.

Exact Solutions for Vibration and Buckling of An SS-C-SS-C Rectangular Plate Loaded by Linearly Varying In-plane Stresse (등변분포 평면응력을 받는 SS-C-SS-C 직사각형 판의 진동과 좌굴의 엄밀해)

  • 강재훈;심현주;장경호
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.14 no.1
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    • pp.56-63
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    • 2004
  • Exact solutions are presented for the free vibration and buckling of rectangular plates haying two opposite edges ( x=0 and a) simply supported and the other two ( y=0 and b) clamped, with the simply supported edges subjected to a linearly varying normal stress $\sigma$$_{x}$=- $N_{0}$[1-a(y/b)]/h, where h is the plate thickness. By assuming the transverse displacement ( w) to vary as sin(m$\pi$x/a), the governing partial differential equation of motion is reduced to an ordinary differential equation in y with variable coefficients. for which an exact solution is obtained as a power series (the method of Frobenius). Applying the clamped boundary conditions at y=0 and byields the frequency determinant. Buckling loads arise as the frequencies approach zero. A careful study of the convergence of the power series is made. Buckling loads are determined for loading parameters a= 0, 0.5, 1, 1.5. 2, for which a=2 is a pure in-plane bending moment. Comparisons are made with published buckling loads for a= 0, 1, 2 obtained by the method of integration of the differential equation (a=0) or the method of energy (a=1, 2). Novel results are presented for the free vibration frequencies of rectangular plates with aspect ratios a/b =0.5, 1, 2 when a=2, with load intensities $N_{0}$ / $N_{cr}$ =0, 0.5, 0.8, 0.95, 1. where $N_{cr}$ is the critical buckling load of the plate. Contour plots of buckling and free vibration mode shapes ate also shown.shown.

펄스레이저를 이용한 $MgTiO_3$ 박막의 성장 및 특성

  • 강신충;임왕규;이재찬
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.68-68
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    • 2000
  • 펄스레이저 증착법(이하 PLD)을 이용하여 마이크로파 유전체 소자 및 절연 산화막으로의 응용을 위한 MgTiO3 박막을 다양한 기판상에서 증착하였다. 사파이어 기판에 (a,c-plane Al2O3) 성장된 MgTiO3 박막은 에피텍셜 성장(epitaxial growth)이 되었으며, SiO2/Si 및 Pt/Ti/Si 기판위세 성장된 MgTiO3 박막의 경우 003방향으로 배향(oriented) 되었다. MgTiO3 박막은 450~75$0^{\circ}C$까지 기판온도를 변화시키면서 증착시켰으며, 증착시 산소분압은 50~200 mTorr로 변화시켰다. PLD 증착시 타켓에 조사된 레이저 에너지 밀도는 약 2J/cm2였으며, MgTiO3 박막 증착후 200Torr O2 분위기에서 상온까지 1$0^{\circ}C$/min 의 속도로 냉각시켰다. 사파이어 c-plane 상에서 일머나잇(ilminite) MgTiO3 구조가 55$0^{\circ}C$ 에피텍셜 성장하는 것을 관찰할 수 있었으며, 사파이어 a-plane 상에서는 MgTiO3 구조가 $650^{\circ}C$ 이상부터 110방향으로 배향되며 성장하였다. $600^{\circ}C$ 이상에서 c-축으로 배향된 구조를 갖고 있었다. 증착된 MgTiO3 박막의 조성분석(stoichio metric analysis)을 위해 RBS 분석을 수행하여, 증착에 이용된 타켓과 동일한 조성을 갖는 MgTiO3 박막이 성장된 것을 확인할 수 있었다. 사파이어 기판상에 증착된 MgTiO3 박막은 가시영역에서 투명하였으며, 약 270nm 파장을 갖는 영역에서 급격한 흡수단을 보였다. 이때의 MgTiO3 박막은 AFM 분석을 통해 약 0.87mn rms roughness 값을 갖는 매우 평탄한 표면구조를 갖고 있는 것을 확인하였다. MIM(Pt/MgTiO3/Pt) 구조의 캐패시터를 형성시켜 MgTiO3 박막의 유전특성(dielectric properties)을 관찰하였다. PLD로 성장된 MgTiO3 박막의 유전율(relative dielectric constant)은 약 22였으며, 1MHz에서 약 1.5%의 유전손실(dielectirc loss) 값을 보였다. 또한 이때 MgTiO3 박막은 낮은 유전분산값을 보였다.

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The physical properties of several HTS coated conductors

  • Lee, Nam-Jin;Oh, Sang-Soo;Song, Kyu-Jeong;Ha, Dong-Woo;Kim, Ho-Sup;Ha, Hong-Soo;Ko, Rock-Kil;Kim, Tae-Hyung;Kim, Sang-Cheol;Yu, Kwon-Kuk;Moon, Seung-Hyun;Youm, Do-Jun
    • Progress in Superconductivity and Cryogenics
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    • v.9 no.4
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    • pp.19-23
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    • 2007
  • The superconducting properties of several HTS coated conductors (CC), which had different tape structures, fabricated by KERI, X and Y institutes were compared. We have fabricated the $high-J_c$ SmBCO CC, which has 273.5 A/cm, $1.2MA/cm^2$ and 93.5 K for $I_C,\;J_C\;and\;T_{c-zero}$, respectively, using the EDDC (Evaporation using Drum in Dual Chambers) process. Both X and Y institutes CCs, however, were purchased. The n-values of KERI, X and Y institutes CCs are 58.5, 40.7 and 31.5 in $V=1{\sim}10{\mu}V$ criterion, respectively. The in-field properties of $I_C$ at 77K were investigated and the $J_C(B)/J_C(0G)$ at 0.5 T with $B{\perp}$ ab-plane are 0.31, 0.19 and 0.24 for KERI, X and Y institutes CCs, respectively. From the $I_C-{\theta}-B$ measurement, we observed that the ab-plane of ReBCO phase was tilted for the ab-plane of substrate in the KERI and X institutes CCs. The tilted angle is about 5 degree. We confirmed that the peak shift (as an inclined texture) was observed by X-ray (102) pole figures of the SmBCO for the KERI CC.

Growth of Non-Polar a-plane ZnO Layer On R-plane (1-102) Sapphire Substrate by Hydrothermal Synthesis (저온 수열 합성법에 의해 (1-102) 사파이어 기판상에 성장된 무분극 ZnO Layer 에 관한 연구)

  • Jang, Jooil;Oh, Tae-Seong;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.4
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    • pp.45-49
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    • 2014
  • In this study, we grew non-polar ZnO nanostructure on (1-102) R-plane sapphire substrates. As for growth method of ZnO, we used hydrothermal synthesis which is known to have the advantages of low cost and easy process. For growth of non-polar, the deposited AZO seed buffer layer with of 80 nm on R-plane sapphire by radio frequency magnetron sputter was annealed by RTA(rapid thermal annealing) in the argon atmosphere. After that, we grew ZnO nanostructure on AZO seed layer by the added hexamethylenetramine (HMT) solution and sodium citrate at $90^{\circ}C$. With two types of additives into solution, we investigated the structures and shapes of ZnO nanorods. Also, we investigate the possibility of formation of 2D non-polar ZnO layer by changing the ratio of two additives. As a result, we could get the non-polar A-plane ZnO layer with well optimized additives' concentrations.