• 한국결정성장학회지
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• 제9권4호
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• pp.377-380
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• 1999

Erbium (Er) doped $LiNbO_{3}(Er:LiNbO_{3})$ single crystal fibers were grown free of creacks along the c-axis by micro-pulling down method. The $Er^{3+}$ concentration was distributed homogeneously along the growth axis. The samples for optical characterization were cut from as-grown single crystal fibers and polished. When the 980nm light was incident on the sample, upconversion phenomena were observed at the green range of wavelength 510~570nm. In addition, the intensity of upconversion was remarkably increased by increasing the concentration of $Er_{2}O_{3}$ dopant in as-grown $Er:LiNbO_{3}$ crystals.

• 한국결정성장학회지
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• 제10권4호
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• pp.279-285
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• 2000

부유대용융법에 의해 비휘발성 기억소자용 강유전성물질인 $YMnO_3$단결정을 육성하였다. 결정성장전 YMnO$_3$분말의 최적합성조건은 $1200^{\circ}C$에서 10시간, 최적원료봉 소결조건으로 $1500^{\circ}C$에서 10시간이었다. 초기 Seed가 없는 상태에서의 실험에서 성장된 단결정의 우선성장방위는 X-ray Laue분석을 통하여 [1010] 임을 알수 있었고 이 결정을 seed로 사용하여 c-축에 수직한 방향으로 $YMnO_3$단결정을 성장하였다 성장된 단결정은 직경 5mm, 길이 50 mm로 양질의 흑청색 결정이었다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1997년도 Proceedings of the 12th KACG Technical Meeting and the 4th Korea-Japan EMGS (Electronic Materials Growth Symposium)
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• pp.163-170
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• 1997

The MgO-doped LiNbO$_3$ single crystals were grown along c-axis by the Czochralski method with the pulling rate of 3mm/h and the rotation of 10rpm. The MgO contents were form 1 to 4 mole%. The SHG properties were investigated with the pulsed Nd:YAG laser, and thermo-optic coefficient, electro-optic coefficient of birefringence and curie temperature were measured. Phase matching temperature and Curie temperature increase similarly with MgO content until 4 mole%.

• 한국세라믹학회지
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• 제29권12호
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• pp.997-1003
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• 1992

Ultra-fine hydroxyapatite powders were synthesized by the hydrothermal reaction of Ca(OH)2 suspension or Ca(NO3)2$.$4H2O solution with (NH4)2HPO4 solution, and the powders were characterized for each synthetic condition. Crystalline hydroxyapatite powders have average grain size of less than 50 nm. By increasing the reaction pressure, the crystallinity was improved, and the crystals were preferentially growing along c-axis. When Ca(NO3)2$.$4H2O of high solubility was used, hydroxyapatite of single phase was produced. However when Ca(OH)2 of low solubility was used more than 0.334 mol/ι, unreacted Ca(OH)2 remained. Diffraction spot patterns of transmission electron microscope show that powders synthesized by the hydrothermal reaction were composed of single crystals of hexagonal phase.

• 한국결정학회지
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• 제14권2호
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• pp.93-104
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• 2003

The crystals of group-Ⅲ nitride semiconductors with wurtzite structure exhibit a strong polarity. Especially, GaN has characteristics of different growth rate, anisotropic electrical and optical properties due to the polarity. In this work, GaN epilayer was grown and the polarities of the crystals were observed by the chemical wet etching and SP-EFM. GaN thin films were deposited on c-plane A1₂O₃ substrate under the variations of growth conditions by HVPE such as the deposition temperature of the buffer layer, the deposition time, the ratio of Group-V and Ⅲ and the deposition temperature of the film. The adquate results were obtained under the conditions of 500℃, 90 seconds, 1333 and 1080℃, respectively. It is observed that the GaN layer grown without the buffer layer has N-polarity and the GaN layer grown on the buffer layer has Ga-polarity. Fine crystal single particles were grown on c-plane A1₂O₃ and SiO₂, layer. The external shape of the crystal shows ｛10-11｝｛10-10｝(000-1) planes as expected in the PBC theory and anisotropic behavior along c-axis is obvious. As a result of etching on each plane, (000-1) and ｛10-11｝planes were etched strongly due to the N-polarity and ｛10-10｝ plane was not affected due to the non-polarity. In the case of the crystal grown on c-plane A1₂O₃, two types of crystals were grown. They were hexagonal pyramidal-shape with ｛10-11｝plane and hexagonal prism with basal plane. The latter might be grown by twin plane reentrant edge (TPRE) growth.

• 한국결정성장학회지
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• 제3권1호
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• pp.12-17
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• 1993

KTP단결정의 육성을 수열법에 의해 행하였다. 결정육성에 사용한 KTP분말은 $KH_2PO_4와 TiO_2$의 화학양론적 혼합물을 $800^{\circ}C$ 에서 고상반응 시킨 뒤 이를 $250^{\circ}C$ 의 4m KF용액중에서 수열처리시켜 단상으로 제조하였다. KTP 결정육성에 있어 가장 효과적인 수열용매는 KF와 $K_2HPO_4$용액이었으며, 이들 용액중 KTP의 용해도는 $350~450^{\circ}C$의 측정 온도범위에서 positive이었다. 양질의 종자결정은 380~430^{\circ}C$ 의 온도범위에서 수평온도 구배법에 의해 얻을 수 있었다. 종자결정의 육성에 있어 큰 성장속도를 나타내는 수열조건은 다음과 같다. 즉, 육성방법;수직온도 구배법, 수열용매;4m의 KF 또는 $K_2HPO_4$용액, 온도범위;$400~450^{\circ}C$, 압력범위;$1000~1500kg/cm^2$이며 이때 KTP의 용해도는 결정성장에 충분하였다. 이상과 같은 수열조건하에서 KTP종자결정은 c축 방향으로 약 0.06~0.08mm/day의 성장속도를 나타내었다. 그리고 육성결정의 형태는 (100), (011), (201)면이 잘 발달하는 경향이 있었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1496-1499
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• 2001

Optical and electrical properties of the $In_2Se_3$ single crystals grown by use of the Bridgman technique were examined in the transition temperature range between $\alpha$-phase and $\beta$-phase. $In_2Se_3$ single crystal has the rhombohedral structure and lattice constants are a=4.025 $\AA$, c=28.771 $\AA$ in C-axis. The transition temperatures of the stoichiometric $In_2Se_3$ single crystal is $10^{-2}{\Omega}cm^{-1}$ according to the specimens. However it varies rapidly in the transition region.

• 한국세라믹학회지
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• 제31권6호
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• pp.617-622
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• 1994

Single crystals of misfit layered (LaS)xVS2(x 1.18) were grown using LaCl3(or I2) as a mineralizer (or transport agent) for the single crystal X-ray diffraction analysis. Procession photographs of (LaS)xVS2(x 1.18) were analyzed as the stacking structure of two kinds of LaS-and VS2-subcell. The result shows that two sublattices have common periodicities along the a*-and c*-axes, respectively, but not along the b*-axis. Sublattice dimensions of LaS and VS2 layers along b-axis were 5.67$\AA$ and 3.42$\AA$, respectively. Their ratio was 1.657 which is very close to 5/3.

• 한국결정성장학회지
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• 제16권5호
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• pp.181-188
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• 2006

스컬용융법에 의해 성장시킨 rutile단결정을 성장 축과 수평 또는 수직으로 절단한 후 ${\phi}5.5mmx1.0mm$ 크기의 웨이퍼로 양면연마 하였다. 연마한 흑색 웨이퍼들은 $1200^{\circ}C$에서 $3{\sim}15$시간, $1300^{\circ}C$에서 $10{\sim}50$시간 annealing을 행함에 의해 옅은 황색으로 변화되었다. Annealing 후 구조적 및 광학적 특성은 비중, SEM-EBSP, XRD, FT-IR, laser Raman, PL 그리고 XPS 등으로 분석하였고, 이들 결과들은 공기중의 무게 증가, 수중의 무게 및 비중의 감소,침상의 2차상, 산소이온 확산 및 $Ti^{3+}$ 이온이 감소되는 것으로 분석되었다. 이는 스컬용융법에 의해 성장된 rutile 단결정에 $O_v,\;Ti^{3+},\;O_v-Ti^{3+}$ interstitial 그리고 $F^+-H^+$와 같은 결함의 존재를 의미한다.

• 한국재료학회지
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• 제22권7호
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• pp.342-345
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• 2012

The dielectric properties and phase transformation of poled <001>-oriented $Pb(Mg_{1/3}Nb_{2/3})O_3-x%PbTiO_3$(PMN-x%PT) single crystals with compositions of x = 20, 30, and 35 mole% are investigated for orientations both parallel and perpendicular to the [001] poling direction. An electric-field-induced monoclinic phase was observed for the initial poled PMN-30PT and PMN-35PT samples by means of high-resolution synchrotron x-ray diffraction. The monoclinic phase appears from $-25^{\circ}C$ to $100^{\circ}C$ and from $-25^{\circ}C$ to $80^{\circ}C$ for the PMN-30PT and PMN-35PT samples, respectively. The dielectric constant (${\varepsilon}$)-temperature (T) characteristics above the Curie temperature were found to be described by the equation$(1/{\varepsilon}-1/{\varepsilon}_m)^{1/n}=(T-T_m)/C$, where ${\varepsilon}_m$ is the maximum dielectric constant and $T_m$ is the temperature giving ${\varepsilon}_m$, and n and C are constants that change with the composition. The value of n was found to be 1.82 and 1.38 for 20PT and 35PT, respectively. The results of mesh scans and the temperature-dependence of the dielectric constant demonstrate that the initial monoclinic phase changes to a single domain tetragonal phase and a to paraelectric cubic phase. In the ferroelectric tetragonal phase with a single domain state, the dielectric constant measured perpendicular to the poling direction was dramatically higher than that measured in the parallel direction. A large dielectric constant implies easier polarization rotation away from the polar axis. This enhancement is believed to be related to dielectric softening close to the morphotropic phase boundary.