• Bulletin of the Korean Chemical Society
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• 제28권5호
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• pp.795-799
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• 2007

The bulk properties of poly(γ-benzyl-L-glutamate)-poly(ethylene glycol), PBLG-PEO, diblock copolymer were investigated. The helical transition from 7/2 to 13/5 for pure PBLG was at 120 oC while those of GE-1 and GE-2, which contain flexible PEO block 40 wt% and 60 wt% respectively, were shown at 135℃ on DSC experiments. FT-IR and XRD experiments were shown that the diblock copolymers maintained their α-helical structure in the temperature range between 25℃ and 175℃. Increasing relative size of coil part resulted in the increase of intermolecular packing distances. Due to well-maintained helical structure, lyotropic LC phases were observed for the PBLG-PEO block copolymer by the polarized optical microscope (POM). Especially, GE-3 copolymer, which has 12.5 wt% PEO contents, showed the smectic C phase. The competition of favorable aggregation energy between rod-rod and coil-coil, and unfavorable aggregation energy of rod-coil give rise to change the supramolecular structure in mixed solvent.

• 한국진공학회지
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• 제5권1호
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• pp.14-24
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• 1996

We have investigated atomic and electronic structures of a clean Pd(111) surface using low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). A typical clean LEED pattern with a 3-fold symmetry has been observed, corresponding to that for an fcc (111) surface. ARPES measurements have been performed along the $\Gamma-M,\Gamma-K,\Gamma-M$TEX> symmetry lines, from which the experimental band structure of Pd(111) has been determined. The experimental band structure and work function of Pd(111) surface are found to agree well with the calculated band structure of bulk Pd and the calculated work function of Pd(111), respectively. However, the peak positions in the experimental band structure are located closer to the Fermi level than in the theoretical band structure by 0.1~0.8 eV, depending on the $\kappa$-points in the Brillouin zone. In additin, the experimental band widths are narrower than the theoretical band widths by about 0.5eV. The effects of the localized surface Pd 4d states and the Coulomb interaction between Pd 4d bulk electrons have been discussed as possible origins of such discrepancies between experiment and theory.

• 정보과학회 논문지
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• 제41권10호
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• pp.792-798
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• 2014

R-tree는 공간 데이터베이스 분야에서 가장 널리 쓰이는 색인 구조이며 다양한 변형된 기법들이 제안되었다. 이 기법들 중 Hilbert R-tree는 공간 채움 곡선인 Hilbert 곡선을 이용해서 대용량의 데이터를 고비용의 분할 과정 없이 R-tree를 구성하는 기법이다. 하지만 기존의 CPU기반의 Hilbert R-tree는 대용량의 데이터를 처리할 때는 순차적인 접근으로 발생되는 고비용의 전처리 비용과 느린 구축시간으로 실제 응용에 적용되기에는 한계가 있다. 본 논문에서는 이러한 문제를 해결하기 위해 GPU를 이용해서 데이터의 Hilbert 매핑을 병렬화 하고 이를 통해서 최종적으로 GPU의 메모리에 Hilbert R-tree의 벌크로딩을 고속화하는 기법을 제안한다. GPU기반의 Hilbert R-tree는 inversed-cell 기법과 트리구조 패킹의 병렬화 기법을 통해서 벌크로딩의 성능을 향상시켰다. 실험 결과에서는 기존의 CPU 기반의 벌크로딩에 비해 최대 45배의 성능향상을 보여주었다.

• 한국공간정보시스템학회 논문지
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• 제7권3호
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• pp.55-65
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• 2005

본 논문은 이동체의 잦은 갱신에 의해 발생하는 색인 재구성에 대한 비용을 줄이기 위해 이동체의 지연 다량 삽입 기법을 제안한다. 기존 이동체 색인에 대한 연구는 주로 색인 구성 후에 발생하는 질의 처리 효율성에 초점을 두었다. 이들은 이동체 데이터의 갱신 연산에 의한 색인 재구성에 대한 디스크 접근 오버헤드를 거의 고려하지 않았다. 이러한 이동체 데이터의 갱신 연산에 대한 비용을 줄이기 위해 다량 삽입 기법과 여러 색인이 제안되었다. 하지만 제안된 기법들은 매우 가변적이고 대량인 데이터를 효율적으로 처리하는데 많은 디스크 I/O 비용을 필요로 한다. 본 논문에서는 빠른 데이터 생성 속도에 적합하도록 디스크 접근 오버헤드를 고려해서 R-트리를 관리할 수 있는 현재색인에 대한 다량 삽입 기법을 제안한다. 이 기법에서는 다차원 색인 구조에서의 다량 삽입 기법을 위한 버퍼링 기법을 사용한다. R-트리의 단말 노드 정보를 관리하는 보조 색인을 추가하여 노드의 분할과 합병을 예상한다. 또한 연산을 종류에 따라 분류하여 불필요한 삽입과 삭제 연산을 줄인다. 노드의 변환를 최소화하는 방향으로 이동 객체의 처리 순서를 정하여 데이터 갱신에 따른 노드의 분할과 합병을 최소화한다. 실험을 통해 제안한 기법을 이용한 다량 삽입 기법이 기존의 삽입 기법들보다 색인의 갱신 비용을 감소시키는 것을 알 수 있다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.383-383
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• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• JSTS:Journal of Semiconductor Technology and Science
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• 제8권3호
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• pp.239-243
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• 2008

In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

• 한국결정학회지
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• 제17권2호
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• pp.51-54
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• 2006

BaO layers were formed on the Si(100) surface by thermal evaporation of barium metal with simultaneous oxidation. The atomic structure of BaO layers at the initial stage of the deposition was investigated by the scattering intensity variation of $He^+$ions on time-of-flight (TOF) impact-collision ion scattering (ICISS). The results show that several number of BaO layers are formed on the Si(100) surface with the lattice parameter of bulk phase, and the occupation of oxygen atoms of the BaO layers is on-top site of silicon atoms.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1971-1973
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• 1996

In this paper various types of gyroscope fabricated by micromachining technologies were reviewed. Four common types of gyroscope reported in the past few years are beam, tuning fork, gimbal, and vibrating shell structure made by surface micromachining using sacrificial layer, bulk micromachining using RIE, or electroplating method. In the study of these new gyroscopes, the fabrication methods, advantages and disadvantages of each structure were examined as well as the direction of development in the future.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.368.1-368.1
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• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Bulletin of the Korean Chemical Society
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• 제34권2호
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• pp.609-614
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• 2013

Extended H$\ddot{u}$ckel tight-binding band structure calculations are used to address the chemical bonding and elastic properties of $Zr_2AC$ (A=Al, Si, P, and S). Elastic properties are interpreted by analyzing the density of states and the crystal orbital overlap population for the respective phases. Our results show that the bulk modulus of these ternary compounds is determined by the strength of Zr-A bonds.