• Bulletin of the Korean Chemical Society
• /
• v.28 no.5
• /
• pp.795-799
• /
• 2007

The bulk properties of poly(γ-benzyl-L-glutamate)-poly(ethylene glycol), PBLG-PEO, diblock copolymer were investigated. The helical transition from 7/2 to 13/5 for pure PBLG was at 120 oC while those of GE-1 and GE-2, which contain flexible PEO block 40 wt% and 60 wt% respectively, were shown at 135℃ on DSC experiments. FT-IR and XRD experiments were shown that the diblock copolymers maintained their α-helical structure in the temperature range between 25℃ and 175℃. Increasing relative size of coil part resulted in the increase of intermolecular packing distances. Due to well-maintained helical structure, lyotropic LC phases were observed for the PBLG-PEO block copolymer by the polarized optical microscope (POM). Especially, GE-3 copolymer, which has 12.5 wt% PEO contents, showed the smectic C phase. The competition of favorable aggregation energy between rod-rod and coil-coil, and unfavorable aggregation energy of rod-coil give rise to change the supramolecular structure in mixed solvent.

• Journal of the Korean Vacuum Society
• /
• v.5 no.1
• /
• pp.14-24
• /
• 1996

We have investigated atomic and electronic structures of a clean Pd(111) surface using low energy electron diffraction (LEED) and angle-resolved photoemission spectroscopy (ARPES). A typical clean LEED pattern with a 3-fold symmetry has been observed, corresponding to that for an fcc (111) surface. ARPES measurements have been performed along the $\Gamma-M,\Gamma-K,\Gamma-M$TEX> symmetry lines, from which the experimental band structure of Pd(111) has been determined. The experimental band structure and work function of Pd(111) surface are found to agree well with the calculated band structure of bulk Pd and the calculated work function of Pd(111), respectively. However, the peak positions in the experimental band structure are located closer to the Fermi level than in the theoretical band structure by 0.1~0.8 eV, depending on the $\kappa$-points in the Brillouin zone. In additin, the experimental band widths are narrower than the theoretical band widths by about 0.5eV. The effects of the localized surface Pd 4d states and the Coulomb interaction between Pd 4d bulk electrons have been discussed as possible origins of such discrepancies between experiment and theory.

• Journal of KIISE
• /
• v.41 no.10
• /
• pp.792-798
• /
• 2014

In spatial databases, R-tree is one of the most widely used indexing structures and many variants have been proposed for its performance improvement. Among these variants, Hilbert R-tree is a representative method using Hilbert curve to process large amounts of data without high cost split techniques to construct the R-tree. This Hilbert R-tree, however, is hardly applicable to large-scale applications in practice mainly due to high pre-processing costs and slow bulk-load time. To overcome the limitations of Hilbert R-tree, we propose a novel approach for parallelizing Hilbert mapping and thus accelerating bulk-loading of Hilbert R-tree on GPU memory. Hilbert R-tree based on GPU improves bulk-loading performance by applying the inversed-cell method and exploiting parallelism for packing the R-tree structure. Our experimental results show that the proposed scheme is up to 45 times faster compared to the traditional CPU-based bulk-loading schemes.

• Journal of Korea Spatial Information System Society
• /
• v.7 no.3 s.15
• /
• pp.55-65
• /
• 2005

This paper presents a bulk insertion technique for efficiently inserting data items. Traditional moving object database focused on efficient query processing that happens mainly after index building. Traditional index structures rarely considered disk I/O overhead for index rebuilding by inserting data items. This paper, to solve this problem, describes a new bulk insertion technique which efficiently induces the current positions of moving objects and reduces update cost greatly. This technique uses buffering technique for bulk insertion in spatial index structures such as R-tree. To analyze split or merge node, we add a secondary index for information management on leaf node of primary index. And operations are classified to reduce unnecessary insertion and deletion. This technique decides processing order of moving objects, which minimize split and merge cost as a result of update operations. Experimental results show that this technique reduces insertion cost as compared with existing insertion techniques.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.02a
• /
• pp.383-383
• /
• 2010

Gas-phase hydrogen atoms create a variety of chemical and physical phenomena on Si surfaces: adsorption, abstraction of pre-adsorbed H, Si etching, Si amorphization, and penetration into the bulk lattice. Thermal desorption/evolution analyses exhibited three distinct peaks, including one from the crystalline bulk. It was previously found that thermal-energy gaseous H(g) atoms penetrate into the Si(100) crystalline bulk within a narrow substrate temperature window(centered at ~460K) and remain trapped in the bulk lattice before evolving out at a temperature as high as ~900K. Developing and sustaining atomic-scale surface roughness, by H-induced silicon etching, is a prerequisite for H absorption and determines the $T_s$ windows. Issues on the H(g) absorption to be further clarified are: (1) the role of the detailed atomic surface structure, together with other experimental conditions, (2) the particular physical lattice sites occupied by, and (3) the chemical nature of, absorbed H(g) atoms. This work has investigated and compared the thermal H(g) atom absorptivity of Si(100), Si(111) and Si(110) samples in detail by using the temperature programmed desorption mass spectrometry (TPD-MS). Due to the differences in the atomic structures of, and in the facility of creating atom-scale etch pits on, Si(100), (100) and (110) surfaces, the H-absorption efficiency was found to be larger in the order of Si(100) > Si(111) > Si(110) with a relative ratio of 1 : 0.22 : 0.045. This intriguing result was interpreted in terms of the atomic-scale surface roughening and kinetic competition among H(g) adsorption, H(a)-by-H(g) abstraction, $SiH_3(a)$-by-H(g) etching, and H(g) penetraion into the crystalline silicon bulk.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.8 no.3
• /
• pp.239-243
• /
• 2008

In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of $500^{\circ}C$, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The morphology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED's and optical switches.

• Korean Journal of Crystallography
• /
• v.17 no.2
• /
• pp.51-54
• /
• 2006

BaO layers were formed on the Si(100) surface by thermal evaporation of barium metal with simultaneous oxidation. The atomic structure of BaO layers at the initial stage of the deposition was investigated by the scattering intensity variation of $He^+$ions on time-of-flight (TOF) impact-collision ion scattering (ICISS). The results show that several number of BaO layers are formed on the Si(100) surface with the lattice parameter of bulk phase, and the occupation of oxygen atoms of the BaO layers is on-top site of silicon atoms.

• Proceedings of the KIEE Conference
• /
• 1996.07c
• /
• pp.1971-1973
• /
• 1996

In this paper various types of gyroscope fabricated by micromachining technologies were reviewed. Four common types of gyroscope reported in the past few years are beam, tuning fork, gimbal, and vibrating shell structure made by surface micromachining using sacrificial layer, bulk micromachining using RIE, or electroplating method. In the study of these new gyroscopes, the fabrication methods, advantages and disadvantages of each structure were examined as well as the direction of development in the future.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2014.02a
• /
• pp.368.1-368.1
• /
• 2014

We proposed amorphous GeSe-based ReRAM device of metal-insulator-metal (M-I-M) structure. The operation characteristics of memory device occured unipolar switching characteristics. By introducing the concepts of valance-alternation-pairs (VAPs) and chalcogen vacancies, the unipolar resistive switching operation had been explained. In addition, the current transport behavior were analyzed with space charge effect of VAPs, Schottky emission in metal/GeSe interface and P-F emission by GeSe bulk trap in mind. The GeSe ReRAM device of M-I-M structure indicated the stable memory switching characteristics. Furthermore, excellent stability, endurance and retention characteristics were also verified.

• Bulletin of the Korean Chemical Society
• /
• v.34 no.2
• /
• pp.609-614
• /
• 2013

Extended H$\ddot{u}$ckel tight-binding band structure calculations are used to address the chemical bonding and elastic properties of $Zr_2AC$ (A=Al, Si, P, and S). Elastic properties are interpreted by analyzing the density of states and the crystal orbital overlap population for the respective phases. Our results show that the bulk modulus of these ternary compounds is determined by the strength of Zr-A bonds.