• 제목/요약/키워드: bulk deposition

검색결과 232건 처리시간 0.026초

부산지역에서의 Sulfate와 Nitrate의 침적량에 관한 연구 (A Study on Bulk Deposition Flux of Sulfate and Nitrate in Pusan, Korea)

  • 김유근;박종길;문덕환;황용식
    • 한국대기환경학회:학술대회논문집
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    • 한국대기환경학회 2001년도 추계학술대회 논문집
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    • pp.113-114
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    • 2001
  • 산업화ㆍ도시화에 따라 인구 증가, 교통량 증가 및 도시 구조물의 증가 등으로 인하여 도시의 대기오염과 열섬 현상 등이 날로 심각한 사회문제로 제기되고 있다. 일반적으로 대기 중에 부유하는 오염물질들은 광화학 반응을 통하여 2차 오염물질이 생성되기도 하고, 기상인자에 의하여 확산 또는 수송되어 대기오염도가 감소하거나, 중력에 의하여 지표 부근에 침적되어 제거된다. 특히, 건성 및 습성 침적되는 강하먼지는 단위 지역의 대기오염을 파악하거나, 타 지역과의 비교에 지표로 활용되고 있다. (중략)

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The Gettering Effect of Boron Doped n-type Monocrystalline Silicon Wafer by In-situ Wet and Dry Oxidation

  • 조영준;윤지수;장효식
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.429-429
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    • 2012
  • To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

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Preparation of $Ba_{1-x}Sr_xTiO_3$ thin films by metal-organic chemical vapor deposition and electrical properties (Preparation of $Ba_{1-x}Sr_xTiO_3$thin films by metal by metal-organic chemical vapor deposition and electrical properties.)

  • Yoon, Jong-Guk;Yoon, Soon-Gil;Lee, Won-Jae;Kim, Ho-Gi
    • 한국진공학회지
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    • 제5권1호
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    • pp.62-66
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    • 1996
  • $(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

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완전화 박막의 구현을 위한 기술적 과제와 도전

  • 정재인;양지훈;박혜선;정재훈;송민아
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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    • pp.98-98
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    • 2013
  • 완전화 박막이란 사용자가 원하는 용도에 맞게 최적의 성능을 구현하도록 제조된 박막을 의미하며 금속이나 화합물 박막을 제조하되 각종 구조 제어 Tool이나 증착 공정을 변화시켜 나노화와 다층화 또는 치밀화를 통해 구현될 수 있다. 최근 고성능의 증착 및 제어 Tool이 개발되고 빗각증착(Oblique Angle Deposition)이나 스침각 증착(Glancing Angle Deposition) 방법 등의 기술이 개발되면서 사용자 목적에 최적인 박막 소재를 제공하여 User-friendly한 응용을 위한 연구개발이 활발히 진행되고 있다. 완전화 박막 제조에 대한 시도는 1990년대에 일본에서 시작되었다. 일본에서는 산학연이 공동으로 참여하는 NEDO 프로그램을 통해 경질코팅을 이용한 Protective Layer를 제조하여 차단 방식에 의한 내식성 구현 연구를 수행하였다. 유럽에서는 제 7차 European Framework Program (7th FT)을 통해 2007년부터 CORRAL (Corrosion Protection with Perfect Atomic Layer) 프로젝트를 만들어 완전화 박막 연구를 진행하고 있다. 상기 프로젝트는 얇은 자연 산화막이 Bulk의 부식을 방지해주는 것에 착안하여 HIPIMS나 Filtered Arc 또는 ALD 공정을 이용하여 자연 산화막과 유사한 Defect-free 산화막을 제조하여 Barrier형 내식성 박막을 구현하는 것을 목표로 하고 있다. 본 연구에서는 완전화 박막 구현을 위한 연구동향을 파악하고 완전화 박막 제조를 위한 기술적 과제와 몇 가지의 시도에 대한 기초 연구 자료를 소개한다.

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Effect of cement dust on soil physico-chemical properties around cement plants in Jaintia Hills, Meghalaya

  • Lamare, R. Eugene;Singh, O.P.
    • Environmental Engineering Research
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    • 제25권3호
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    • pp.409-417
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    • 2020
  • Investigation was carried out to assess the effect of cement dust deposition on the physico-chemical properties of soil near some cement plants in Jaintia Hills, Meghalaya. Soil samples were collected and analysed and compared with the control site. Comparison of various soil physico-chemical parameters revealed that cement dust emanating from cement plants has changed the soil quality in the surrounding areas of cement plants. The normal soil pH in the area is generally acidic. However, due to the continuous deposition of cement dust soil pH was found slightly alkaline near the cement plants. The higher values of soil parameters such as electrical conductivity and bulk density were also noticed near the cement plants. However, lower values of water holding capacity, soil moisture content, soil organic carbon and total nitrogen content were found compared to the control sites. The effect of cement dust deposition on soil is more in areas nearer to the cement plants. At present the changes may not be so serious but if this trend continues, soil properties of a vast area around the cement plants are likely to change leading to multiple effects on flora, fauna and socio-economy of the area.

RF 스퍼터를 이용하여 미리 가열된 기판을 냉각하며 증착한 ZnO 박막의 c축 배향성 향상에 관한 연구 (Improvement of c-axis orientation of ZnO thin film prepared on pre-heated substrate with cooling during RF sputter deposition)

  • 박성현;이순범;신영화;이능헌;지승한;권상직
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.24-25
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    • 2006
  • In this paper, ZnO thin films were prepared on p-Si(100) by RF magnetron sputtering. Before the depostion, the substrates were pre-heated to 500, 400, 300, $200^{\circ}C$ or not. During the deposition, the substrates were cooled down naturally or kept and then the films were investigated by XRD(X-ray diffraction) and SEM (scanning micro scope). It is showed the most outstanding result that the film was prepared on the substrate were cooled from $400^{\circ}C$. When the substrate was cooled from a certain temperature during deposition, it could be improve the c-axis orientation and useful for application of SAW(surface acoustic wave) filter and FBAR(film bulk acoustic wave resonator) device.

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원자층 제어 PLD를 이용한 산화물 자성 박막 연구의 동향 (Research Trend of Oxide Magnetic Films with Atomically Controlled Pulsed Laser Deposition)

  • 김봉주;김복기
    • 한국자기학회지
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    • 제22권4호
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    • pp.147-156
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    • 2012
  • 최근 들어 박막의 원자층 두께를 정밀하게 제어하는 여러 가지 박막 성장 방법에 관한 관심이 높다. 그 중에서 원자층 두께를 조절할 수 있는 PLD 방법은 매우 폭넓은 관심을 받고 있다. 우리는 기존의 PLD 방법과 Reflection high energy electron diffraction(RHEED)을 이용하여 원자층 제어 PLD 방법을 구현하였다. 이러한 방법을 이용하여 산화물에서의 원자층 두께를 정밀하게 제어하는 방법에 관한 실험을 수행하였다. 이와 같은 실험방법이 가지는 다양한 조건을 제어하여 최소한의 결함을 가지고 결정의 화학적 조성에 근접하는 고품질의 박막을 구축하여 이를 바탕으로 다양한 실험을 수행하였다. 본 논문에서는 최근 이러한 박막을 이용한 우리의 실험결과와 타 그룹의 실험 동향을 정리하여 보았다.

Structural, Electrical and Optical Properties of ZnO Thin Films Grown at Various Plume-Substrate Angles by Pulsed Laser Deposition

  • Kim Jae-Won;Kang Hong-Seong;Lee Sang-Yeol
    • KIEE International Transactions on Electrophysics and Applications
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    • 제5C권3호
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    • pp.97-101
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    • 2005
  • ZnO thin films were grown at different plume-substrate (P-S) angles of 90$^{\circ}$ (on-axis PLD), 45$^{\circ}$ and 0$^{\circ}$ (off-axis PLD) using pulsed laser deposition. The x-ray diffraction pattern exhibiting a dominant (002) and a minor (101) peak of ZnO indicates all films were strongly c-axis oriented. By observing of (002) peak, the FWHMs of ZnO (002) peaks decreased and c-axis lattice constant approached the value of bulk ZnO as P-S angle decreased. Whereas the carrier concentration of ZnO thin film deposited at P-S angle of 90$^{\circ}$ was ~ 10$^{19}$ /cm$^{3}$, the Hall measurement of ZnO thin films deposited at P-S angles of 0$^{\circ}$ and 45$^{\circ}$ was impossible due to the decrease of the carrier concentration by the improvement of stoichiometry and crystalline quality. By decreasing P-S angle, the grain size of the films and the UV intensity investigated by photoluminescence (PL) increased and UV peak position showed red shift. The improvement of properties in ZnO thin films deposited by off-axis technique was due to the decrease of repulsive force between a substrate and the particle in plume and the relaxation of supersaturation.

Investigation of the Effect of Acidity and Polyethylene Glycol on Electrochemical Deposition of Trivalent Chromium Ions

  • Phuong, N.V.;Kwon, S.C.;Lee, J.Y.;Kim, M.;Lee, Y.I.
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2011년도 춘계학술대회 및 Fine pattern PCB 표면 처리 기술 워크샵
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    • pp.47-48
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    • 2011
  • The effect of solution acidity and organic additives, polyethylene glycol (PEG), on the trivalent chromium electroplating was systematically investigated in the view point of solution stability, electroreduction of trivalent chromium ions and characterization of deposition layer. It was found that, the concentration of fraction chromium complexes in the trivalent chromium bath containing formic acid is strongly depended on pH value. PEG molecules were stable in trivalent chromium bath containing formic acid via studies on electrospray ionization mass spectrometry (ESI-MS) and UV-Vis. However, the presence of PEG molecules decreased the reductive current of hydrogen evolution, increasing of current efficiency higher about 10 % compared with solutions without PEG. Moreover, PEG additives developed the nodular morphology during electroreduction of trivalent chromium ions with the increase of solution acidity and enhanced its current efficiency by maintaining the consumption of complexant, formic acid, at a low speed. In this study, the effect of solution acidity was emphasized important, there, it controlled the formation of complexes in the solution, cathodic film (CF) during deposition, and properties of deposited layer. By electrochemical quartz crystal microbalance (EQCM), studies show that chromium electrodeposition occurs via the formation of intermediate complexes and adsorption on the cathode surface, which hinder the penetration of ions from bulk solution to the cathode surface.

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Impedance Characterization of Tantalum Oxide Deposited through Pulsed-Laser Deposition

  • Kwon, Kyeong-Woo;Jung, Jin-Kwan;Park, Chan-Rok;Kim, Jin-Sang;Baek, Seung-Hyub;Hwang, Jin-Ha
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2013년도 제45회 하계 정기학술대회 초록집
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    • pp.207.1-207.1
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    • 2013
  • Tantalum oxide has been extensively investigated as one of the promising Resistive switching materials applicable to Resistive Dynamic Access Memories. Impedance spectroscopy offers simultaneous measurements of electrical and dielectric information, separation of electrical origins among bulk, grain boundaries, and interfaces, and the monitoring of electrical components. Such benefits have been combined with the resistive states of resistive switching devices which can be described in terms of equivalent circuits involving resistors, capacitors, and inductors, The current work employed pulsed laser deposition in order to prepare the oxygen-deficient tantalum oxide. The fabricated devices were controlled between highresistance and low-resistance states in controlled current compliance modes. The corresponding electrical phenomena were monitored both in the dc-based current-voltage characteristics and in the ac-based impedance spectroscopy. The origins of the electrical switching are discussed towards optimized ReRAM devices in terms of interfacial effects.

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