• 제목/요약/키워드: bulk CMOS

검색결과 53건 처리시간 0.019초

유속 감지를 위한 실리콘 유량센서의 설계 및 제작 (Design and Fabrication of Silicon Flow Sensor For Detecting Air Flow)

  • 이영주;전국진;부종욱;김성태
    • 전자공학회논문지A
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    • 제31A권5호
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    • pp.113-120
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    • 1994
  • Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

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Prioritized Multipath Video Forwarding in WSN

  • Asad Zaidi, Syed Muhammad;Jung, Jieun;Song, Byunghun
    • Journal of Information Processing Systems
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    • 제10권2호
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    • pp.176-192
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    • 2014
  • The realization of Wireless Multimedia Sensor Networks (WMSNs) has been fostered by the availability of low cost and low power CMOS devices. However, the transmission of bulk video data requires adequate bandwidth, which cannot be promised by single path communication on an intrinsically low resourced sensor network. Moreover, the distortion or artifacts in the video data and the adherence to delay threshold adds to the challenge. In this paper, we propose a two stage Quality of Service (QoS) guaranteeing scheme called Prioritized Multipath WMSN (PMW) for transmitting H.264 encoded video. Multipath selection based on QoS metrics is done in the first stage, while the second stage further prioritizes the paths for sending H.264 encoded video frames on the best available path. PMW uses two composite metrics that are comprised of hop-count, path energy, BER, and end-to-end delay. A color-coded assisted network maintenance and failure recovery scheme has also been proposed using (a) smart greedy mode, (b) walking back mode, and (c) path switchover. Moreover, feedback controlled adaptive video encoding can smartly tune the encoding parameters based on the perceived video quality. Computer simulation using OPNET validates that the proposed scheme significantly outperforms the conventional approaches on human eye perception and delay.

저온 공정을 통해 제작이 가능한 Sn/SWNT 혼합 파우더 기반의 TSV구조 개발 (Manufacture of TSVs (Through-Silicon Vias) based on Single-Walled Nanotubes (SWNTs)/Sn Composite at Low Temperature)

  • 정동건;정대웅;공성호
    • 센서학회지
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    • 제28권2호
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    • pp.127-132
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    • 2019
  • In this study, the fabrication of through-silicon vias (TSVs) filled with SWNTs/Sn by utilizing surface/bulk micromachining and MEMS technologies is proposed. Tin (Sn) and single-walled nanotube (SWNT) powders are used as TSV interconnector materials in the development of a novel TSV at low temperature. The measured resistance of a TSV filled with SWNT/Sn powder is considerably reduced by increasing the fraction of Sn and is lower than that of a TSV filled with only Sn. This is because of a decrease in the surface scattering of electrons along with an increase in the grain size of sintered SWNTs/Sn. The proposed method is conducted at low temperatures (< $400^{\circ}C$) due to the low melting temperature of Sn; hence, the proposed TSVs filled with SWNTs/Sn can be utilized in CMOS based applications.