• Journal of Sensor Science and Technology
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• v.6 no.5
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• pp.423-429
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• 1997

We fabricated PLT thin films on ITO substrate for flat pannel display and investigated the characteristics, then we applicated to electroluminescent device and investigated application possibility. When we fabricated PLT thin films with substrate temperature of $500^{\circ}C$, and pressure of 30 mTorr, the relative deielectric constant and breakdown electricfield of PLT thin films were 120 and 3.2MV/cm. The electric resistivity was $2.0{\times}10^{12}{\Omega}{\cdot}cm$. PLT thin films had polycrystal structure of perovskite and pyrochlore at the higher substrate temperature than $450^{\circ}C$, and had good crystallinity at higher pressure. To use PLT insulator film and ZnS:Mn phosphor, we fabricated thin film electroluminescent device of ITO/PLT/ZnS:Mn/PLT/Al structure. At the result, threshold voltage was $35.2V_{rms}$ and brightness was $2400cd/m^{2}$ at $50V_{rms}$ and 1kHz. Maximum luminescence efficiency was 0.811m/W.

• Journal of Animal Science and Technology
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• v.46 no.5
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• pp.871-878
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• 2004

Pulsed electric fields(PEF) technology is one of the latest nonthermal methods of food processing for obtaining safe and minimally processed foods. This technology can be effectively explored for obtaining safe food with minimum effect on nutritional, flavor, rheological and sensory qualities of food products. The process involves the application of high voltage(typically 20 ${\sim}$ 80 kv/cm) to foods placed between two electrodes. The mode of inactivation of microorganism; by PEP processing has been postulated in term; of electric breakdown and electroporation. The extent of destruction of microorganisms in PEF processing depends mainly on the electric field strength of the pulses and treatment time. For each cell types, a specific critical electric field strength and specific critical treatment time are required depending on the cell characteristics and the type and strength of the medium where they have been present. The effect also depends on the types of microorganisms and their phase of growth. A careful combination of processing parameters has to be selected for effective processing. The potential applications of PEF technology are numerous ranging from biotechnology to food preservation. With respect to food processing, it has already been established that, the technology is non-thermal in nature, economical and energy efficient, besides providing minimally processed foods. This article gives a brief overview of this technology for food processing applications.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.21 no.6
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• pp.25-32
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• 2021

In this study, it proposes a mode converter that is relatively easy to implement and can shorten the transmission line length of the final combining port and it was fabricated and tested by applying it to an 8-way spatial combiner. The proposed mode converter converts the signal converted from the doorknob-shaped circular disk connected to the ground into the TM₀₁ mode by opening it in the circular waveguide. The 8-way waveguide spatial combiner is designed and implemented so that 8 signals input from the H-plane are combined in a circular waveguide at the center, and the final combining mode is TM₀₁. The test results confirmed excellent performance with an insertion loss of less than 0.4dB and a combining efficiency of 95% or more. In addition, it was confirmed that it is suitable for high output by calculating the breakdown voltage and discharge threshold power of the new mode conversion structure through electric field analysis. The results confirmed through this study are expected to be applicable to high-power, high-efficiency SSPA in various fields in the future.

• Journal of Platform Technology
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• v.8 no.3
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• pp.10-21
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• 2020

Partial discharge occurs a lot in high-voltage power equipment such as switchgear, transformers, and switch gears. Partial discharge shortens the life of the insulator and causes insulation breakdown, resulting in large-scale damage such as a power outage. There are several types of partial discharge that occur inside the product and the surface. In this paper, we design a predictive model that can predict the pattern and probability of occurrence of partial discharge. In order to analyze the designed model, learning data for each type of partial discharge was collected through the UHF sensor by using a simulator that generates partial discharge. The predictive model designed in this paper was designed based on CNN during deep learning, and the model was verified through learning. To learn about the designed model, 5000 training data were created, and the form of training data was used as input data for the model by pre-processing the 3D raw data input from the UHF sensor as 2D data. As a result of the experiment, it was found that the accuracy of the model designed through learning has an accuracy of 0.9972. It was found that the accuracy of the proposed model was higher in the case of learning by making the data into a two-dimensional image and learning it in the form of a grayscale image.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.32 no.4
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• pp.121-127
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• 2022

β-Gallium oxide (Ga₂O₃), an ultra-wide bandgap semiconductor, has attracted great attention due to its promising applications for high voltage power devices. The most stable phase among five different polytypes, β-Ga₂O₃ has the wider bandgap of 4.9 eV and higher breakdown electric field of 8 MV/cm. Furthermore, it can be grown from melt source, implying higher growth rate and lower fabrication cost than other wide bandgap semiconductors such as SiC, GaN and diamond for the power device applications. In this study, β-Ga₂O₃ bulk crystals were grown by the edge-defined film-fed growth (EFG) process. The growth direction and the principal surface were set to be the [010] direction and the (100) plane of the β-Ga₂O₃ crystal, respectively. The spectra measured by Raman an alysis could exhibit the crystal phase an d impurity dopin g in the β-Ga₂O₃ ingot, and the crystallinity quality and crystal direction were analyzed using high-resolution X-ray diffraction (HRXRD). The crystal quality and various properties of as-grown β-Ga₂O₃ ribbon was systematically analyzed in order to investigate the spatial variation in entire crystal grown by EFG method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.33 no.2
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• pp.83-90
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• 2023

The β-Ga₂O₃ has the most thermodynamically stable phase, a wide band gap of 4.8~4.9 eV and a high dielectric breakdown voltage of 8MV/cm. Due to such excellent electrical characteristics, this material as a power device material has been attracted much attention. Furthermore, the β-Ga₂O₃ has easy liquid phase growth method unlike materials such as SiC and GaN. However, since the grown pure β-Ga₂O₃ single crystal requires the intentionally controlled doping due to a low conductivity to be applied to a power device, the research on doping in β-Ga₂O₃ single crystal is definitely important. In this study, various source powders of un-doped, Sn 0.05 mol%, Sn 0.1 mol%, Sn 1.5 mol%, Sn 2 mol%, Sn 3 mol%-doped Ga₂O₃ were prepared by adding different mole ratios of SnO₂ powder to Ga₂O₃ powder, and β-Ga₂O₃ single crystals were grown by using an edge-defined Film-fed Growth (EFG) method. The crystal direction, crystal quality, optical, and electrical properties of the grown β-Ga₂O₃ single crystal were analyzed according to the Sn dopant content, and the property variation of β-Ga₂O₃ single crystal according to the Sn doping were extensively investigated.