• 한국자동차공학회논문집
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• 제5권1호
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• pp.27-37
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• 1997

Internal combustion engine is the main source of environmental pollutants and therefore better technology is required to reduce harmful elements from the exhaust gases all over the world. Especially, harmful elements from the exhaust gases are caused by incomplete combustion of mixture inside the engine cylinder and this abnormal combustion like misfire or partial burning is the direct cause of the air pollution and engine performance degradation. the object of this research is to detect abnormal combustion like misfire and to keep the engine performance in the optimal operating state. Development of a new system therefore could be applied to a real car. To realize this, the spark-plug in a conventional ignition system is used as a misfire detection sensor and breakdown voltage is analyzed. In this research, bias voltage(about 3kV) was applied to the electrodes of spark-plug and breakdown voltage signal is obtained. This breakdown voltage signal is analyzed and found that a combustion phenomena in engine cylinder has close relationship with harmonic coefficient K which was introduced in this research. Newly developed combustion diagnostic method( breakdown voltage signal analysis) from this research can be used for the combustion diagnostic and combustion control system in an real car.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.793-797
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• 2007

In this paper, the long time breakdown characteristic of the epoxy composite, which is widely used in the insulation system for high voltage application, was estimated with Weibull distribution. In the procedure of the estimation, the short time breakdown characteristics for the epoxy composite specimens, which were made with the variation of hardener and/or filler, were tested firstly. Then the long time voltage-to-time test was implemented. Finally, the long time breakdown voltage of each specimen was estimated with the parameters obtained from the statistical treatment with Weibull distribution. Base on the results, it has been found that the optimal weight ratio of epoxy resin/hardener/filler that has the excellent long time breakdown characteristic was 100/100/65. It was due to the silane treatment which relieves the electric field at the interface between filler and epoxy.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 C
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• pp.1478-1480
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• 1997

We investigated the breakdown characteristic of mineral oil according to applied voltage and tip radius. In this experiment, electrode system was point-plane geometry. The tip radius of needle was 5, 10, 20 and $25{\mu}m$, respectively. Applied voltage was AC and DC. We measured breakdown voltage for each tip radius with increasing electrode gap, 2mm to 10mm. Under nonuniform electric field, breakdown strength was higher when needle was negative than when needle was positive. Because it is polarity effects due to space charge. And the more sharp tip radius, whether we applied AC or DC, the higher breakdown strength. As tip radius increase, breakdown strength decreases exponentially.

• Journal of Electrical Engineering and Technology
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• 제13권6호
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• pp.2421-2424
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• 2018

A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.

• Transactions on Electrical and Electronic Materials
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• 제16권3호
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• pp.146-150
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• 2015

Insulation breakdown voltage and insulation lifetime were investigated in straight lines or twisted pairs with polyesterimide-polyamideimide enameled round wires (EI/AIW ). The enamel thickness was 50 μm and the conducting copper radius was 0.50, 0.75, 1.09, and 1.50 mm, respectively. There were many air gaps in a twisted pair therefore, when voltage was applied to the twisted pair, enamel erosion took place in the air gap area because of partial discharge according to Paschen's law. Insulation breakdown voltage and insulation lifetime were highest in the sample of 0.75 mm conductor radius, which was higher than those values for 0.50 mm or 1.09 and 1.55 mm.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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• pp.101-102
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• 2005

SiC lateral power semiconductor device has high breakdown voltage and low on-state voltage drop due to the material characteristics. And, because the high breakdown voltage can be obtained, RESURF technique is mostly used in silicon power semiconductor devices. In this paper, we presents the electrical characteristics of the 4H-SiC RESURF LDMOSFET as a function of the epi-layer length, concentration and thickness. 240~780V of breakdown voltage can be obtained as a function of epi-layer length and thickness with same epi-layer concentration.

• 한국전기전자재료학회논문지
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• 제30권4호
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• pp.214-217
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• 2017

An IGBT (insulated gate bipolar transistor) device has an excellent current-conducting capability. It has been widely employed as a switching device to use in power supplies, converters, solar inverters, and household appliances or the like, designed to handle high power. The aim with IGBT is to meet the requirements for use in ideal power semiconductor devices with a high breakdown voltage, an on-state voltage drop, a high switching speed, and high reliability for power-device applications. In general, the concentration of the drift region decreases when the breakdown voltage increases, but the on-resistance and other characteristics should be reduced to improve the breakdown voltage and on-state voltage drop characteristics by optimizing the design and structure changes. In this paper, using the T-CAD, we designed the NPT-IGBT (non punch-through IGBT) and FS-IGBT (field stop IGBT) and analyzed the electrical characteristics of those devices. Our analysis of the electrical characteristics showed that the FS-IGBT was superior to the NPT-IGBT in terms of the on-state voltage drop.

• 전기학회논문지
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• 제57권4호
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• pp.635-640
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• 2008

New gas mixtures are now finding applications such as interrupting media for high-voltage circuit breakers. These mixtures consist of a high content of carbon tetrafluoride($CF_4$) added to sulfur hexafluoride($SF_6$). Nowdays $SF_6$ has been established for the use in gas insulated substations due to its high insulation withstand level and good arc quenching capability. At this paper Breakdown characteristics were investigated for $SF_6/CF_4$ mixtures when AC voltage and standard lightning impulse voltage(LI) was applied in a needle-plane electrodes. And partial discharge(PD) experiments were carried out in the test chamber which was made in needle-plane electrode. And ${\Phi}$-Q-N distribution of partial discharge signals was analyzed. The total pressure of the $SF_6/CF_4$ mixtures was varied within the range of 0.1-0.5 Mpa in the test chamber. The breakdown voltage in needle-plane electrode displayed N shape characteristics for increasing the content of $SF_6$ at positive impulse voltage and the PD inception voltage was increased slightly when pressure of $SF_6/CF_4$ Mixtures was increased. Maximum PD inception voltage is showed in 80% SF6/20%$CF_4$.

• 한국전기전자재료학회논문지
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• 제32권5호
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• pp.366-370
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• 2019

In this paper, a single N+ emitter trench gate-type insulated gate bipolar transistor (IGBT) device was studied using T-CAD, in order to achieve a low on-state voltage drop (Vce-sat) and high breakdown voltage, which would reduce power loss and device reliability. Using the simulation, the threshold voltage, breakdown voltage, and on-state voltage drop were studied as a function of the temperature, the length of time in the diffusion process (drive-in) after implant, and the trench gate depth. During the drive-in process, a $20^{\circ}C$ change in temperature from 1,000 to $1,160^{\circ}C$ over a 150 minute time frame resulted in a 1 to 4 V change in the threshold voltage and a 24 to 2.6 V change in the on-state voltage drop. As a result, a 0.5 um change in the trench depth of 3.5 to 7.5 um resulted in the breakdown voltage decreasing from 802 to 692 V.

• Journal of Electrical Engineering and Technology
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• 제5권4호
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• pp.646-652
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• 2010

This paper investigates a method to improve the breakdown voltage characteristics of a gas discharge arrester (GDA) for a surge suppressor. The middle electrode is inserted between two terminal electrodes. Voltage application to the electrode synchronized and amplified by the impulse voltage decreases spark overvoltage from 45% to 57.6%. The decrease is caused by higher voltage slope, as opposed to applied impulse voltage (by 5.5 to 6.2 times). In addition, the GDA model using ATP-Draw was used to analyze the operation characteristics of GDAs. The test and simulation results agree to within 2% when the trigger source was used.