• Title/Summary/Keyword: breakdown stress

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Electrical Insulation Characteristics of HTS Cables according to Bending Strain (고온초전도 케이블의 굴곡 변화에 따른 전기절연 특성)

  • Kwang, Dong-Soon;Kim, Sang-Hyun
    • Progress in Superconductivity and Cryogenics
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    • v.11 no.1
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    • pp.45-48
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    • 2009
  • Research on the mechanical properties of the dielectric paper and mini-model cable are important for optimum electrical insulation design of HTS cable, because the HTS cable experience of mechanical stress, such as tensile and bending stress. Also, it is operated at cryogenic temperature. Therefore, this paper discusses the experiment results on the AC and lighting impulse breakdown characteristics, partial discharge inception and extinction characteristics, and external shape change of the insulation layer according to bending strain of the mini-model cable.

Influence of Defects on Electrical Characteristics of Distributing Cable Termination (배전급 케이블 종단부의 결점이 전기적 특성에 미치는 영향)

  • Kim, Sang-Hyun;Choi, Jae-Hyeong;Choi, Jin-Wook;Kim, Young-Seok;Kim, Sun-Gu;Baek, Seung-Myeong
    • Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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    • v.23 no.2
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    • pp.190-195
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    • 2009
  • This paper introduces experimental investigates of an electrical accident of the distributing cable termination with simulated a shoddy construction. We prepared two termination kites, one is built-in type, the other is heat contraction type. Also, we manufactured cable termination that have simulated defect by badness construction and investigated their insulation characteristics such as ac (35[kV], 1[min]) and impulse (95[kV], $1.2{\times}50[{\mu}s]$) withstand test. The influence of defects such as thickness decrease, the gap between stress-con of housing and semiconductor and heating time on insulating properties of the termination have been studied. The thickness decrease of an insulator decreases ac breakdown strength suddenly and the breakdown traces of the insulator that is damaged by knife displayed elliptic shape. The gap of between stress-con and semiconductor deteriorates dielectric strength of insulator seriously. In heat contraction type, the ac breakdown voltage became low when the heating time is short.

Electrical properties variations of nitrided, reoxided MOS devices by nitridation condition (질화와 재산화 조건에 따른 모스 소자의 전기적 특성변화)

  • 이정석;이용재
    • Proceedings of the IEEK Conference
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    • 1998.06a
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    • pp.343-346
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    • 1998
  • Ultra-thin gate oxide in MOS devices are subjected to high-field stress during device operation, which degrades the oxide and exentually causes dielectric breakdown. In this paper, we investigate the electrical properties of ultra-thin nitrided oxide (NO) and reoxidized nitrided oxide(ONO) films that are considered to be promising candidates for replacing conventional silicon dioxide film in ULSI level integration. We study vriations of I-V characteristics due to F-N tunneling, and time-dependent dielectric breakdown (TDDB) of thin layer NO and ONO depending on nitridation and reoxidation condition, and compare with thermal $SiO_{2}$. From the measurement results, we find that these NO and ONO thin films are strongly depending on its condition and that optimized reoxided nitrided oxides (ONO) films show superior dielectric characteristics, and breakdown-to-change ( $Q_{bd}$ ) performance over the NO films, while maintaining a similar electric field dependence compared to NO layer.

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Breakdown characteristics of gate oxide with tungsten polycide electrode (텅스텐 폴리사이드 전극에 따른 게이트 산화막의 내압 특성)

  • 정회환;이종현;정관수
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.33A no.12
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    • pp.77-82
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    • 1996
  • The breakdown characteristics of metal-oxide-semiconductor(MOS) capacitors fabricated by Al, polysilicon, and tungsten polycide gate electrodes onto gate oxide was evaluated by time zero dielectric breakdwon (TZDB). The average breakdown field of the gate oxide with tungsten polycide electride was lower than that of the polysilicon electrode. The B model (1~8MV/cm) failure of the gate oxide with tungsten polycide electrode was increased with increasing annealing temperature in the dry $O_{2}$ ambient. This is attributed ot fluorine and tungsten diffusion from thungsten silicide film into the gate oxide, and stress increase of tungsten polcide after annealing treatment.

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Breakdown Properties for Insulation Design of the Environment-Friendly Pole Transformer using the Vegetable Insulating Oil (식물성절연유를 사용한 친환경 주상변압기 설계를 위한 절연파괴 특성)

  • Kwag, Dong-Soon
    • Journal of the Korean Society of Safety
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    • v.26 no.6
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    • pp.7-12
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    • 2011
  • In recent years, environmental concerns have been raised on the use of poorly biodegradable fluids in electrical apparatus in regions where spills from leaks and equipment failure could contaminate the surroundings. The newly invented vegetable insulating oil is highly biodegradable and have negligible impact on the environment, human health and the ecosystem. For development of the environmental-friendly pole transformer using vegetable insulating oil, the dielectric constructions of the pole transformer were discussed in this paper. Depending on the dielectric constructions, the AC breakdown characteristics of the Nomex insulating papers and the vegetable insulating oil were studied by simulated electrode systems. Based on the experimental results, the maximum design stress($E_{max}$) for insulation design of the environmental-friendly pole transformer were suggested.

Effects of Temperature on Dielectric Breakdown Strength of Epoxy Compounds Filled with Natural Zecolite

  • Kim, You-Jeong;Park, Hyeong-Ki;Kim, Sang-Wook
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.544-547
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    • 1999
  • To develop the better insulants. the zeolite particle, which is aluminosilicate mineral, was filled In the DGEBA/MDA/SN epoxy resin system. Dynamic DSC curves of cured specimens with various contents of zeolite were observed and the glass transition temperature(T$_{g}$) was obtained. According to this result, we could carry out the experiment concerned with the dielectric breakdown strength around T$_{g}$ and find the limit temperature for the application of the DDEBA/MDA/SN system filled with natural zeolite. T$_{g}$ increased with the content of zeolite. As the temperature increased, the dielectric breakdown strength decreased rapidly, in the region of T$_{g}$. At the high temperature, the deterioration by electrical stress was activated. The diameter of puncture at the high temperature was larger 7han that at the room temperature.erature.

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Temperature dependance of Leakage Current of Nitrided, Reoxided MOS devices (질화, 재산화시진 모스 절연막의 온도 변화에 따른 누설전류의 변화)

  • 이정석;장창덕;이용재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.71-74
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    • 1998
  • In this Paper, we investigate the electrical properties of ultra-thin(70${\AA}$) nitrided(NO) and reoxidized nitrided oxide(ONO) film that ale considered to be premising candidates for replacing conventional silicon dioxide film in ULSI level integration. we studied I$\sub$g/-V$\sub$g/ characteristics to know the effect of nitridation and reoxidation on the current conduction, leakage current time-dependent dielectric breakdown(TDDB) to evaluate charge-to-breakdown(Q$\sub$bd/), and the effect of stress temperature(25, 50, 75, 100$^{\circ}C$) and compared to those with thermal gate oxide(SiO$_2$) of identical thickness. From the measurement results, we find that reoxidized nitrided oxide(ONO) film shows superior dielectric characteristics, leakage current, and breakdown-to-charge(Qbd) performance over the NO film, while maintaining a similar electric field dependence compared to NO layer. Besides, ONO film has strong resistance against variation in temperature.

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The Formation and Characteristics of Laser CVD SiON Films (Laser CVD에 의한 SiON막의 형성과 그 특성)

  • Kwon, Bong-Jae;Park, Jong-Wook;Cheon, Young-Il;Lee, Cheol-Jin;Park, Ji-Soon;Sung, Yung-Kwon
    • Proceedings of the KIEE Conference
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    • 1991.11a
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    • pp.241-244
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    • 1991
  • In this paper, we introduced Silicon Oxynitride films deposited by Laser CVD, and evaluated the electrical breakdown of these films by TZDB(Time Zero Dielectric Breakdown) and TDDB(Time Dependent Dielectric Breakdown) test. In addition, high frequency C-V test was done in order to calculate hysterisis and flatband voltage(before and after electric field stress). Failure times against eletric field are examined and electric field accelation factor $\beta$ are obtained, and long term reliability was also described by extrapolating into life time in the operating voltage(5V). In this experiments, the deposited films with increased temperature represented small flatband voltage, hysterisis and favorable breakdown characteristics, this is why the hydrogen in the film was decreased and the film was densified, long term reliability was good in the laser CVD SiON films.

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Breakdown Strength Estimation of Non-Cellulosic Insulating Materials Used in Electrical Power Equipment

  • Singh, Sakshi;Mohsin, Mirza Mohd.;Masood, Aejaz
    • Transactions on Electrical and Electronic Materials
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    • v.18 no.6
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    • pp.338-340
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    • 2017
  • Breakdown of solid insulating materials in power equipment could result in undesired outages and replacements, and may be due to an increase in electric stress on the material. Therefore, it is necessary to conduct a proper diagnosis of materials before their practical use. In this work, a few inherent properties of different non-cellulosic insulating materials, such as Nomex, Teflon, laminated Nomex, glass bonded mica, epoxy resin bonded mica paper, and epoxy resin bonded fiberglass, have been evaluated by performing non-destructive dielectric diagnostic measurements, and an attempt has been made to correlate these basic parameters to evaluate the breakdown strength (BDS). An equation has been proposed using a basic theory which defines the correlation between the BDS, dielectric constant, dissipation factor, sample thickness, and volume resistivity. The results obtained from the equation are also compared with the experimental values. The suggested equation will be helpful to predict the BDS of any non-cellulosic material without experimentation in the laboratory.