• Journal of Environmental Science International
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• v.32 no.6
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• pp.465-475
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• 2023

In this study, we evaluated the treatment efficiency of livestock wastewater by altering the current density using boron-doped diamond (BDD) electrodes. As the current density was adjusted from 10 to 35 mA/cm2, the removal efficiency of organic matter increased from 22.2 to 71.5%. Similar to that of organic matter, the removal efficiency of color increased with increasing current density up to 85.7%, indicating a higher removal efficiency for color than that of organic matter. The removal efficiency of ammonia nitrogen increased from 14.6 to 53.3% as the current density increased, but it was lower than that of organic matter. In addition, the removal of organic matter, color, and ammonia nitrogen followed first-order reactions, according to the reaction rate analysis. The energy consumption ranged from 4.87 to 8.33 kWh/kg COD, and it was found that the organic matter removal efficiency was more efficient at high current densities. Based on various analyses, the optimal current density was 20 mA/cm2, and the corresponding energy consumption was 6.824 kWh/kg COD.

• Steel and Composite Structures
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• v.33 no.4
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• pp.509-523
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• 2019

In the present work, the buckling analysis of micro sandwich plate with an isotropic/orthotropic cores and piezoelectric/polymeric nanocomposite face sheets is studied. In this research, two cases for core of micro sandwich plate is considered that involve five isotropic Devineycell materials (H30, H45, H60, H100 and H200) and an orthotropic material also two cases for facesheets of micro sandwich plate is illustrated that include piezoelectric layers reinforced by carbon and boron-nitride nanotubes and polymeric matrix reinforced by carbon nanotubes under temperature-dependent and hydro material properties on the elastic foundations. The first order shear deformation theory (FSDT) is adopted to model micro sandwich plate and to apply size dependent effects from modified strain gradient theory. The governing equations are derived using the minimum total potential energy principle and then solved by analytical method. Also, the effects of different parameters such as size dependent, side ratio, volume fraction, various material properties for cores and facesheets and temperature and humidity changes on the dimensionless critical buckling load are investigated. It is shown from the results that the dimensionless critical buckling load for boron nitride nanotube is lower than that of for carbon nanotube. It is illustrated that the dimensionless critical buckling load for Devineycell H200 is highest and lowest for H30. Also, the obtained results for micro sandwich plate with piezoelectric facesheets reinforced by carbon nanotubes (case b) is higher than other states (cases a and c).The results of this research can be used in aircraft, automotive, shipbuilding industries and biomedicine.

• Nuclear Engineering and Technology
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• v.54 no.1
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• pp.97-109
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• 2022

Multi-dimensional coupling analysis is a research hot spot in nuclear reactor thermal hydraulic study and both the full-scale system transient response and local key three-dimensional thermal hydraulic phenomenon could be obtained simultaneously, which can achieve the balance between efficiency and accuracy in the numerical simulation of nuclear reactor. A one-dimensional to three-dimensional (1D-3D) coupling platform for the nuclear reactor multi-dimensional analysis is developed by XJTU-NuTheL (Nuclear Thermal-hydraulic Laboratory at Xi'an Jiaotong University) based on the CFD code Fluent and system code RELAP5 through the Dynamic Link Library (DLL) technology and Fluent user-defined functions (UDF). In this paper, the International Standard Problem (ISP) No. 43 is selected as the benchmark and the rapid boron dilution transient in the nuclear reactor is studied with the coupling code. The code validation is conducted first and the numerical simulation results show good agreement with the experimental data. The three-dimensional flow and temperature fields in the downcomer are analyzed in detail during the transient scenarios. The strong reverse flow is observed beneath the inlet cold leg, causing the de-borated water slug to mainly diffuse in the circumferential direction. The deviations between the experimental data and the transients predicted by the coupling code are also discussed.

• Journal of the Korean Society for Heat Treatment
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• v.11 no.2
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• pp.140-149
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• 1998

The graphitization is affected by the addition of small amount of the elements, such as Si, Al, Ni, B, Cr and Mn etc. Boron is well known as the most effective element for the graphitization of cementite in high carbon steels. But a study on quantitative analysis of B effect on the graphitization is few reported. Therefore the effect of boron addition in Fe-0.65%C-1.0%Si-0.5%Mn steels on the graphitization is investigated quantitatively using hardness tester, optical microscope and scanning electron microscope, neutron induced microscopic radiography. The graphitization in high carbon steels is promoted with 0.003~0.005%B addition. But the graphitization in steels which has no boron takes long holding time at $680{\sim}720^{\circ}C$. The hardness of quenched steel containing 0.003%B is higher than that of 0.005%B added steel due to complete dissolution of fine graphites into the austenite. The 0.003%B added high carbon steel graphitized at $680^{\circ}C$ for 25hr is useful steel for the agricultural implements and automobile parts which needed a good formability and high hardness.

• Current Photovoltaic Research
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• v.2 no.1
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• pp.1-7
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• 2014

We developed a method of growing thin Si film at $600^{\circ}C$ by hot wire CVD using a very thin large-grained poly-Si seed layer for thin-film Si solar cells. The seed layer was prepared by crystallizing an amorphous Si film by vapor-induced crystallization using $AlCl_3$ vapor. The average grain size of the p-type epitaxial Si layer was about $20{\mu}m$ and crystallographic defects in the epitaxial layer were mainly low-angle grain boundaries and coincident-site lattice boundaries, which are special boundaries with less electrical activity. Moreover, with a decreasing in-situ boron doping time, the mis-orientation angle between grain boundaries and in-grain defects in epitaxial Si decreased. Due to fewer defects, the epitaxial Si film was high quality evidenced from Raman and TEM analysis. The highest mobility of $360cm^2/V{\cdot}s$ was achieved by decreasing the in-situ boron doping time. The performance of our preliminary thin-film solar cells with a single-side HIT structure and $CoSi_2$ back contact was poor. However, the result showed that the epitaxial Si film has considerable potential for improved performance with a reduced boron doping concentration.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.285-285
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• 2013

Recently, hexagonal boron nitride (h-BN), which is III-V compound of boron and nitride by strong covalent sp2 bonds has gained great interests as a 2 dimensional insulating material since it has honeycomb structure with like graphene with very small lattice mismatch (1.7%). Unlike graphene that is semi-metallic, h-BN has large band gap up to 6 eV while providing outstanding properties such as high thermal conductivity, mechanical strength, and good chemical stability. Because of these excellent properties, hBN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Low pressure and atmospheric pressure chemical vapor deposition (LPCVD and APCVD) methods have been investigated to synthesize h-BN by using ammonia borane as a precursor. Ammonia borane decomposes to polyiminoborane (BHNH), hydrogen, and borazine. The produced borazine gas is a key material that is a used for the synthesis of h-BN, therefore controlling the condition of decomposed products from ammonia borane is very important. In this paper, we optimize the decomposition of ammonia borane by investigating temperature, amount of precursor, and other parameters to fabricate high quality monolayer h-BN. Synthesized h-BN is characterized by Raman spectroscopy and its absorbance is measured with UV spectrophotometer. Topological variations of the samples are analyzed by atomic force microscopy. Scanning electron microscopy and Scanning transmission Electron microscopy are used for imaging and analysis of structures and surface morphologies.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.232-232
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• 2012

The doping of semiconducting elements is essential for the development of silicon quantum dot (QD) solar cells. Especially the doping elements should be activated by substitution at the crystalline sites in the crystalline silicon QDs. However, no analysis technique has been developed for the analysis of the activated dopants in silicon QDs in $SiO_2$ matrix. Secondary ion mass spectrometry (SIMS) is a powerful technique for the in-depth analysis of solid materials and the impurities analysis of boron and phosphorus in semiconductor materials. For the study of diffusion behaviour of B and P by SIMS, Si/$SiO_2$ multilayer films doped by B or P were fabricated and annealed at high temperatures for the activated doping of B and P. The distributions of doping elements were analyzed by SIMS. Boron found to be preferentially distributed in Si layer rather than the $SiO_2$ layer. Especially the B in the Si layers was separated to two components of an interfacial component and a central one. The central component was understood as the activated elements. On the other hand, phosphorus did not show any preferred diffusion.

• Analytical Science and Technology
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• v.18 no.4
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• pp.263-270
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• 2005

Nuclear track is an useful tool for elemental analysis of radionuclides, such as uranium, plutonium and thorium, etc., and for elements undergoing nuclear reactions with thermal neutrons such as lithium and boron. This method has various application fields such as detecting fissionable radionuelides, measuring the fission rate in nuclear technology, analyzing cosmic radiation from meteorite, calculating the age of minerals as well as their history, etc. Track registration method has been applied to the microscopic analysis of boron and fissionable element such as uranium in KAERI. This report reviews the theoretical background of the nuclear track formation, practical procedures to obtain etched tracks and a perspective of the future.

• Journal of the Korean Ceramic Society
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• v.45 no.4
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• pp.238-244
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• 2008

Modeling and FEM analysis on Boron Nitride and/or Pyrolytic Carbon coating layers on SiC fibers under indentation contact loadings are investigated. Especially this study attempts to model the mechanical behavior of the SiC fibers with and without coatings. Tyranno S grade and Tyranno LoxM grade of SiC are selected for fiber and Boron Nitride and/or Pyrolytic Carbon as coating material. The modeling is performed by SiC fiber without coating layer, which includs single(BN or PyC) and double(BN-PyC or PyC-BN) coating layer. And then the analysis is performed by changing a type of coating layer, a type of fiber and coating sequence. In this study, the concepts of modeling and analysis techniques for optimum design of BN and PyC coating process on SiC fiber are shown. Results show that stresses are reduced when indentation contact loading applies on the material having lower elastic modulus.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.33A no.2
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• pp.96-113
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• 1996

It has been found that the misfit dislocations in heavily boron-doped layers originate from wafer edges. Moreover, the propagation of the misfit dislocation into a heavily boron-doped region can be suppressed by placing a surrounding undoped region. Using a surrounding undoped region the disloction-free heavily boron-deoped silicon membranes have been fabricated. The measured surface roughness, fracture strength, and residual tensile stress of the membrane are 20.angs. peak-to-peak, 1.39${\times}$10$^{10}$ and 2.7${\times}$10$^{9}$dyn/cm$^{2}$, while those of the conventional heavily boron-doped silicon membrane with high density of misfit dislocations are 500 peak-to-peak, 8.27${\times}$10$^{9}$ and 9.3${\times}$10$^{8}$dyn/cm$^{2}$ respectively. The differences between these two membranes are due to the misfit dislocations. Young's modulus has been extracted as 1.45${\times}$10$^{12}$dyn/cm$^{2}$ for both membranes. Also, the effective lattice constant of heavily boron-doped silicon, the in-plane lattice constant of the conventional membrane, and the density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as density of misfit dislocation contained in the conventional membrane have been extracted as 5.424.angs. 5.426.angs. and 2.3${\times}$10$^{4}$/cm for the average boron concentration of 1.3${\times}$10$^{20}$/cm$^{-23}$ cm$^{3}$/atom. Without any buffer layers, a disloction-free lightly boron-doped epitaxial layer with good crsytalline quality has been directly grown on the dislocation-free heavily boron-doped silicon layer. X-ray diffraction analysis revealed that the epitaxial silicon has good crystallinity, similar to that grown on lightly doped silicon substrate. The leakage current of the n+/p gated diode fabricated in the epitaxial silicon has been measured to be 0.6nA/cm$^{2}$ at the reverse bias of 5V.