• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• Journal of Environmental Science International
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• v.12 no.11
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• pp.1189-1196
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• 2003

The effect of boron and aluminum on the development of adventitious roots was studied in sunflower cuttings. Three-day-old seedlings were de-rooted and grown in nutrient solutions with or without boron and supplemented with different concentrations (from 50 to 700 ${\mu}$M) of aluminum. The number and length of the adventitious roots and proline content in adventitious roots in response to insufficient boron and aluminum stress were determined periodically. The micronutrient boron caused the development of numerous roots in the lower parts of the hypocotyl. A dose-response of boron-induced rooting yielded an optimum concentration of 0.1 mM boron. In the absence of boron, in the majority of the adventitious roots, a significant inhibition was observed with or without aluminum, indicating that the most apparent symptom of boron deficiency is the cessation of root growth. Increasing concentrations of aluminum caused progressive inhibition of growth and rooting of the hypocotyls, and a parallel increase in proline levels of adventitious roots. Supplemental boron ameliorated the inhibitory effect of aluminum, suggesting that aluminum could inhibit root growth by inducing boron deficiency. Ascorbate added to medium in the absence of boron improved root growth and induced a significant decrease in proline levels. These findings suggest that adventitious root growth inhibition resulting from either boron deficiency or aluminum toxicity may be a result of impaired ascorbate metabolism.

• Proceedings of the Korean Environmental Sciences Society Conference
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• 2003.05a
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• pp.261-262
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• 2003

Sunflower(Helianthus annuus L.) seedings were de-rooted and grown in nutrient solutions providing either deficient or sufficient boron supply and supplemented with aluminum. Increasing concentrations of aluminum in the nutrient medium caused progressive inhibition of root growth and a parallel increase in proline level of roots. Elevated boron levels improved root growth under toxic aluminum conditions and produced higher proline contents. Exogenous ascorbate improved adventitions root growth in plants supplied with insufficient boron and aluminum. These findings suggest that root growth inhibition resulting from either boron deficiency or aluminum toxicity may be a result of impaired ascorbate metabolism.

• Korean Journal of Materials Research
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• v.28 no.9
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• pp.495-498
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• 2018

Intermetallic compound matrix composites have been expected to be established as high temperature structural components. $Ni_3Al$ is a representative intermetallic alloy, which has excellent ductility even at room temperature by adding certain alloying elements. $Ni_3Al$ matrix composites with aluminum oxide particles, which are formed by the in-situ reaction between the alloy and aluminum borate whiskers, are fabricated by a powder metallurgical method. The addition of aluminum borate whiskers disperses the synthetic aluminum oxide particles during sintering and dramatically increases the strength of the composite. The uniform dispersion of reaction synthesized aluminum oxide particles and the uniform solution of boron in the matrix seem to play an important role in the improvement in strength. There is a dramatic increase in strength with the addition of the whisker, and the maximum value is obtained at a 10 vol% addition of whisker. The $Ni_3Al$ composite with 10 vol% aluminum oxide particles $0.3{\mu}m$ in size and with 0.1 wt% boron powder fabricated by the conventional powder metallurgical process does not have such high strength because of inhomogeneous distribution of aluminum oxide particles and of boron. The tensile strength of the $Ni_3Al$ with a 10 vol% aluminum borate whisker reaches more than twice the value, 930 MPa, of the parent alloy. No third phase is observed between the aluminum oxide and the matrix.

• Journal of Korea Foundry Society
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• v.36 no.5
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• pp.147-152
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• 2016

Aluminum has been used as an alternative material for copper, due to its good electrical and thermal conductivities. However, small quantities of transition elements such as Ti and V affect the conductivities of aluminum. Therefore, in this study, the influence of B addition to reduce the effects of Ti and V on the conductivities of aluminum was investigated. Both the electrical and thermal conductivities of aluminum were improved with addition of B up to 0.05 wt%, while the conductivities were gradually reduced with an excess amount of B. SEM-EDS and XRD results exhibited that B reacted with Ti and V element to form diborides, such as $TiB_2$ and $VB_2$ phase, and those diborides tended to settle down to the bottom of the crucible because their densities were higher than that of aluminum melt. As a result, B reduced the deleterious effects of Ti and V, and the electrical and thermal conductivities of aluminum were improved.

• Journal of Korea Foundry Society
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• v.14 no.1
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• pp.62-74
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• 1994

The concentration and particle size distribution of non-metallic inclusions which suspended in the molten aluminum at $700^{\circ}C$ were measured by using LiMCA apparatus. The result revealed that the number of inclusions increased with increasing the applied current or decreasing the orifice diameter, while decreased with increasing the purity of aluminum. And also, it was found that the number of inclusions increased with increasing the amount of boron added to molten aluminum. This was found to be attributed to the formation of the inclusions of TiB and $V_3B_2$. It was investigated that the average concentration of inclusions in a constant volume of 20ml of molten aluminum was increased in the order of pure molten aluminum, molten aluminum containing 20ppm of boron and molten aluminum used repeatly in the experimental casting in this study.

• Nuclear Engineering and Technology
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• v.13 no.4
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• pp.229-236
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• 1981

The boron content in reactor grade aluminum has been determined by means of a capture gamma-ray counting method. The experimental detection limit is found to be 5.7% ppm with 10% uncertainty. In order to improve the sensitivity, the boron is preconcentrated from aluminum by cation exchange resin system. The accuracies of both methods, i.e., one by the direct measurement and the other by the measurement after preconcentration, are checked by an additive method. The results show good agreements with less than 5% deviation.

• Bulletin of the Korean Chemical Society
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• v.28 no.12
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• pp.2162-2190
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• 2007

The newly-developed Meerwein-Ponndorf-Verley (MVP) type reagents using aluminum, boron and other metals for reduction of organic functional groups such as carbonyl and epoxy compounds have been surveyed. highlighted and reviewed in this account are the appearance of new MPV type reagents and their application to the selective reduction of organic functions. Finally, this account emphasizes the distinct contrast in the reducing characteristics existed between metal hydride reagents and MPV reagents, and compares their usefulness in organic synthesis.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.2
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• pp.127-137
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• 2004

We have investigated the structures, the energetic, and the nanomechanics of the single-wall boron-, aluminum-, and gallium-nitride nanotubes using atomistic simulations based on the Tersoff-type potential. The Tersoff-type potential for the III-nitride materials has effectively described the properties of the III-nitride nanotubes. Nanomechanics of boron-, aluminum-, and gallium-nitride nanotubes under the compression loading has been investigated and their Young's moduli were calculated.

• 한국태양에너지학회:학술대회논문집
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• 2011.11a
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• pp.34-39
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• 2011

Screen printing method is a common way to fabricate the crystalline silicon solar cell with low-cost and high-efficiency. The screen printing metallization use silver paste and aluminum paste for front and rear contact, respectively. Especially the rear contact between aluminum and silicon is important to form the back surface filed (Al-BSF) after firing process. BSF plays an important role to reduces the surface recombination due to $p^+$ doping of back surface. However, Al electrode on back surface leads to bow occurring by differences in coefficient of thermal expansion of the aluminum and silicon. In this paper, we studied the properties of mono crystalline silicon solar cell for rear electrode with aluminum and aluminum-boron in order to characterize bow and BSF of each paste. The 156*156 $m^2$ p-type silicon wafers with $200{\mu}m$ thickness and 0.5-3 ${\Omega}\;cm$ resistivity were used after texturing, diffusion, and antireflection coating. The characteristics of solar cells was obtained by measuring vernier callipers, scanning electron microscope and light current-voltage. Solar cells with aluminum paste on the back surface were achieved with $V_{OC}$ = 0.618V, JSC = 35.49$mA/cm^2$, FF(Fill factor) = 78%, Efficiency = 17.13%.