• Proceedings of the Korean Magnestics Society Conference
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• 2004.12a
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• pp.175-176
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• 2004

An integrated waveguide optical isolator by wafer direct bonding has been studied. The isolation ratio was found to be 2.9dB in our device. We found that wafer direct bonding between the InP and GGG is effective for the integration of a waveguide optical isolator.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.37-41
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• 2014

One of the important developments in next generation electronic devices is the technology for power delivery and heat dissipation. In this study, the Cu-to-Cu flip chip bonding process was evaluated using the square ABL power bumps and circular I/O bumps. The difference in bump height after Cu electroplating followed by CMP process was about $0.3{\sim}0.5{\mu}m$ and the bump height after Cu electroplating only was about $1.1{\sim}1.4{\mu}m$. Also, the height of ABL bumps was higher than I/O bumps. The degree of Cu bump planarization and Cu bump height uniformity within a die affected significantly on the misalignment and bonding quality of Cu-to-Cu flip chip bonding process. To utilize Cu-to-Cu flip chip bonding with ABL bumps, both bump planarization and within-die bump height control are required.

• Proceedings of the KIEE Conference
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• 1999.07g
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• pp.3313-3315
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• 1999

Si direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electric devices and MEMS applications because of its stress free structure and stability. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration, and applied pressure. The bonding strength was evaluated by tensile strength method. The bonded interface and the void were analyzed by using SEM and IR camera respectively. A bond characteristic on the interface was analyzed by using IT- IR. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si $OH{\cdots}(HOH{\cdots}HOH{\cdots}HOH){\cdots}OH-Si$. The bond strength depends on the HF pre-treatment condition before pre- bonding (Min:$2.4kgf/crn^2{\sim}Max:14.9kgf/crn^2$)

• Korean Journal of Materials Research
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• v.20 no.6
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• pp.319-325
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• 2010

3-D IC integration enables the smallest form factor and highest performance due to the shortest and most plentiful interconnects between chips. Direct metal bonding has several advantages over the solder-based bonding, including lower electrical resistivity, better electromigration resistance and more reduced interconnect RC delay, while high process temperature is one of the major bottlenecks of metal direct bonding because it can negatively influence device reliability and manufacturing yield. We performed quantitative analyses of the interfacial properties of Al-Al bonds with varying process parameters, bonding temperature, bonding time, and bonding environment. A 4-point bending method was used to measure the interfacial adhesion energy. The quantitative interfacial adhesion energy measured by a 4-point bending test shows 1.33, 2.25, and $6.44\;J/m^2$ for 400, 450, and $500^{\circ}C$, respectively, in a $N_2$ atmosphere. Increasing the bonding time from 1 to 4 hrs enhanced the interfacial fracture toughness while the effects of forming gas were negligible, which were correlated to the bonding interface analysis results. XPS depth analysis results on the delaminated interfaces showed that the relative area fraction of aluminum oxide to the pure aluminum phase near the bonding surfaces match well the variations of interfacial adhesion energies with bonding process conditions.

• The Journal of the Korean dental association
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• v.52 no.1
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• pp.17-26
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• 2014

Computerized 3D virtual dental models are currently available, and their use has started to improve treatment outcomes. The accuracy of digital models has been demonstrated by many studies and various intra-oral scanners are innovated for short scanning time and high precision. Recently, a digital model was combined with a high technology computer-driven system, which was developed for the application of a digital set-up and indirect bonding of lingual attachments. In this section, virtual treatment planning using a virtual set-up program is be introduced, and the clinical applications and accuracy of computer-generated indirect bonding are discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.874-877
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• 2001

SOI(Silicon-On-Insulator) technology is proposed as an alternative to bulk silicon for MEMS(Micro Electro Mechanical System) manufacturing. In this paper, we fabricated the SOI wafer with uniform active layer thickness by silicon direct bonding and mechanical polishing processes. Specially-designed electrostatic bonding system is introduced which is available for vacuum packaging and silicon-glass wafer bonding for SOG(Silicon On Glass) wafer. We demonstrated thermopile sensor and RF resonator using the SOI wafer, which has the merits of simple process and uniform membrane fabrication.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1995.03a
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• pp.90-106
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• 1995

The "O"S' BONDING make metallic and non-metalic crystal structures and form localized superconducting orbitals , which induce electrical conduction , semi-conduction, and superconduction. The orbitals are proced by Ampere's law, Faraday's law , Meissner effect, highcritical temperature of thecopper oxide layers. abnomal trans-membrane signal in cancer cell and plastic deformations bytwins and dislocations, In the case of alloying metals, the most deterimentla cases of electrical conduction are those of solid solution and intermetalic compound . The highest case for the hardness are also those of solid solution and intermetallic compound. It explains the contributions of the "O"S' BONDING for conduction bands and plastic deformation by twins and dislocations.ns and dislocations.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1997.03a
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• pp.140-143
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• 1997

The present study is concerned with the hydrostatic extrusion process of copper-clad aluminium bar to investigate the basic flow characteristics. Considering the bonding mechanism of bi-metal contact surface as cold pressure welding, the normal pressure and the contact surface expansion are selected as process parameters governing the bonding condition. The critical pressure required for the bonding at the interface is obtained by solving a "local extrusion" using a slip line meyhod. A viscoplastic finite element method is used to analyze the steady state extrusion process. The boundary profile of bi-metal rod is predicted by tracking a particle path adjacent to interface surface. The variations of contact surface area and the normal pressure along the interface profile are predicted and compared to those by experiments.

• Journal of the Korea Institute of Military Science and Technology
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• v.11 no.3
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• pp.123-128
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• 2008

Ti-6Al-4V alloy is a critical strategic metal used in aerospace structure due to the high specific strength, toughness, durability, low density, corrosion resistance. Examples of application of this alloy are airframe structural components, aircraft gas turbine disks and blades. Forming of this alloy is not easy due to its high strength and low formability. However, this alloy shows superplastic properties that allow for large plastic deformation under certain conditions. Combination of superplastic forming and diffusion bonding(SPF/DB) processes of this alloy has been widely used to replace mechanically fastened structures with reduced weight and fabrication costs. In this study, superplastic forming/diffusion bonding technology has been developed for fabricating lightweight sandwich panels with Ti-6Al-4V alloy. The experimental results show the forming of titanium lightweight sandwich structure is successfully performed from 3 and 4 sheets of Ti-6Al-4V.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.18 no.4
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• pp.175-182
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• 2017

In light emitting diode (LED) chip packaging, wire bonding is an important process that connects the LED chip on the lead frame pad with the Au wire and enables electrical operation for the next process. The wire bonding process is divided by two types: thermo compression bonding and ultrasonic bonding. Generally, the wire bonding process consists of three steps: 1st ball bonding that bonds the shape of the ball on the LED chip electrode, looping process that hangs the wire toward another connecting part with a loop shape, and 2nd stitch bonding that forms and bonds to another electrode. This study analyzed the factors affecting the LED die bonding processes to optimize the process capability that bonds a small Zener diode chip on the PLCC (plastic-leaded chip-carrier) LED package frame, and then applied response surface analysis. The design of experiment (DOE) was established considering the five factors, three levels, and four responses by analyzing the factors. As a result, the optimal conditions that meet all the response targets can be derived.