• 제목/요약/키워드: blue light-emitting

검색결과 642건 처리시간 0.023초

발광다이오드(LED)를 이용한 저서미세조류의 성장촉진에 의한 오염해역 저질환경개선 1. 저서규조류 Nitzschia sp. 성장에 영향을 미치는 광량과 파장 (Bioremediation on the Benthic Layer in Polluted Inner Bay by Promotion of Microphytobenthos Growth Using Light Emitting Diode (LED) 1. Effects of irradiance and wavelength on the growth of benthic diatom, Nitzschia sp.)

  • 오석진;박달수;양한섭;윤양호;본성범부
    • 한국해양환경ㆍ에너지학회지
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    • 제10권2호
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    • pp.93-101
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    • 2007
  • 오염된 연안 저서환경의 생물학적 정화를 목적으로 발광 다이오드(LED)를 이용하여 저서미세조류 Nitzschia sp.(일본 Hakozaki만에서 분리)의 성장에 미치는 광량과 파장의 영향을 조사하였다. Nitzschia sp.는 청색 LED(450 nm), 황색 LED(590 nm), 적색 LED(650 nm) 및 형광램프(복수파장)에서 배양하였다. 온도 $25^{\circ}C$ 그리고 염분 30 psu에서 배양한 Nitzschia sp.는 청색파장에서 $20\;{\mu}mol\;m^{-2}\;s^{-1}$ 그리고 형광램프는 $40\;{\mu}mol\;m^{-2}\;s^{-1}$에서 최대 상대성장속도를 보였으나, 이보다 높은 광량에서는 광 저해현상이 나타났다. 하지만, 황색 파장과 적색 파장의 최대광량에서 ($350\;{\mu}mol\;m^{-2}\;s^{-1}$) 광 저해현상은 관찰되지 않았다. 광량-성장곡선에서 청색 LED는 ${\mu}=-0.46{\exp}(1-I/6.32)+0.46-0.00043I,\;(r^2=0.98)$, 황색 LED는 ${\mu}=0.42(I+7.87)/(I+58.9),\;(r^2=0.99)$, 적색 LED는 ${\mu}=0.39(I+3.39)/(I+21.6),\;(r^2=0.94)$ 그리고 형광램프는 ${\mu}=-0.38{\exp}(1-I/7.23)+0.38-0.00016I,\;(r^2=0.96)$로 나타났다. 청색 LED, 황색 LED, 적색 LED와 형광램프의 최대성장률은 각각 $0.44\;day^{-1},\;0.42\;day^{-1},\;0.39\;day^{-1}$ 그리고 $0.37\;day^{-1}$이었다. Nitzschia sp.의 최대흡수계수는 472 nm($0.0224\;m^2\;mg\;chi.\;{\alpha}^{-1}$)와 663 nm($0.0179\;m^2\;mg\;chi.\;{\alpha}^{-1}$)에서 보였지만, 모든 파장에서(400 nm-700 nm) 거의 유사한 흡수계수를 보였다. 따라서 가을과 겨울동안에는 청색파장을 조사하여 미세조류 성장을 촉진시키고, 봄과 여름동안에는 황색파장을 조사하여 유해조류의 성장억제와 함께 저서미세조류의 성장시켜 오염된 연안 저서환경 개선에 도움을 줄 수 있을 것으로 생각된다.

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Perylene Bisimide 유도체의 적색 유기 형광체 합성 및 특성 연구 (Synthesis and Characterization of Red Organic Fluorescent of Perylene Bisimide Derivatives)

  • 이승민;정연태
    • 한국전기전자재료학회논문지
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    • 제30권9호
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    • pp.577-582
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    • 2017
  • The white light of a hybrid LED is obtained by using red and green organic fluorescent layers made of polymethylmethacrylate (PMMA) films, which function as color down-conversion layers of blue light-emitting diodes. In this research, we studied the fluorescence properties of a red organic fluorophore, employing perylene bisimide derivatives applicable to hybrid LEDs. The solubility, thermal stability, and luminous efficiency are important characteristics of organic fluorophores for use in hybrid LEDs. The perylene fluorescent compounds (1A and 1B) were prepared by the reaction of 4-bromophenol and 4-iodophenol with N,N'-bis(4-bromo-2,6-diisopropylphenyl)-1, 6,7,12-tetrachloroperylene-3,4,9,10-tetracarboxyl diimide (1) in the presence of dimethyl formaldehyde (DMF) at $70^{\circ}C$. The synthesized derivatives were characterized by using $^1H-NMR$, FT-IR, UV/Vis absorption and PL spectra, and TGA analysis. Compounds 1A and 1B showed absorption and emission at 570 nm and 604 nm in the UV/Vis spectrum. We also documented favorable solubility and thermal stability characteristics of the perylene fluorophores in our work. Perylene fluorophore 1, with the 4-bromophenol substituent 1A, exhibited particularly good thermal stability and solubility in organic solvents.

Light-emitting mechanism varying in Si-rich-SiNx controlled by film's composition

  • Torchynska, Tetyana V.;Vega-Macotela, Leonardo G.;Khomenkova, Larysa;Slaoui, Abdelilah
    • Advances in nano research
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    • 제5권3호
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    • pp.261-279
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    • 2017
  • Spectroscopic investigation of Si quantum dots (Si-QDs) embedded in silicon nitride was performed over a broad stoichiometry range to optimize light emission. Plasma-enhanced chemical vapor deposition was used to grow the $SiN_x$ films on Si (001) substrates. The film composition was controlled via the flow ratio of silane ($SiH_4$) and ammonia ($NH_3$) in the range of R = 0.45-1.0 allowed to vary the Si excess in the range of 21-62 at.%. The films were submitted to annealing at $1100^{\circ}C$ for 30 min in nitrogen to form the Si-QDs. The properties of as-deposited and annealed films were investigated using spectroscopic ellipsometry, Fourier transform infrared spectroscopy, Raman scattering and photoluminescence (PL) methods. Si-QDs were detected in $SiN_x$ films demonstrating the increase of sizes with Si excess. The residual amorphous Si clusters were found to be present in the films grown with Si excess higher than 50 at.%. Multi-component PL spectra at 300 K in the range of 1.5-3.5 eV were detected and nonmonotonous varying total PL peak versus Si excess was revealed. To identify the different PL components, the temperature dependence of PL spectra was investigated in the range of 20-300 K. The analysis allowed concluding that the "blue-orange" emission is due to the radiative defects in a $SiN_x$ matrix, whereas the "red" and "infrared" PL bands are caused by the exciton recombination in crystalline Si-QDs and amorphous Si clusters. The nature of radiative and no radiative defects in $SiN_x$ films is discussed. The ways to control the dominant PL emission mechanisms are proposed.

LED-ID 시스템에서 LED의 온도 특성에 따른 선택적 변조 및 부호화를 통한 QoS 향상 기법 연구 (Improving the QoS using the Modulation and Coding Selection scheme by temperature characteristic of LED in the LED-ID system)

  • 이규진;서효덕;한두희;이계산
    • 한국ITS학회 논문지
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    • 제12권1호
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    • pp.66-74
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    • 2013
  • 본 논문에서는, Light Emitting Diode-Identification(LED-ID) 통신 시스템에서 LED의 온도 특성에 따른 성능저하를 보상하여 QoS를 만족하는 방법에 대하여 연구하였다. LED-ID 통신 기술은 기존 조명의 기능을 수행하는 LED를 사용하여 통신의 기능까지 동시에 구현할 수 있는 효과적인 방법이다. 본 기술은 LED의 RGB(Red Green Blue)광원을 통하여 신호를 전송하는 방법으로, RGB의 혼합 비율에 따라서 조명의 색을 결정하고, 각 RGB신호의 BER성능이 결정된다. 그러나 지속적으로 LED를 사용할 경우에 발생하는 발열 특성으로 인해 각 소자의 온도가 증가하게 되고, 이러한 소자의 발열 온도 증가로 인한 시스템의 성능 저하가 발생 하게 된다. 이러한 문제를 해결하기 위해서 이 논문에서는 LED의 지속적 사용에 따른 발열 온도 및 이로 인한 시스템의 성능저하를 분석하고, 발열 온도 특성에 따른 선택적 변조 및 부호화 기법을 적용하여 신호를 전송함으로써, 시스템의 성능 향상과 QoS를 만족하는 기법을 연구하였다.

고출력 RGB-LED를 사용한 Backlight 개발 (Backlight Unit adopting high power RGB-LEDs)

  • 이한진;박두성;한정민;박정국;배경운;김서윤;김연호;임영진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.2
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    • pp.1038-1042
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    • 2003
  • LED(Light Emitting Diodes)를 이용한 LCD 백라이트는 현재까지 모바일용의 $2{\sim}3$ 인치정도의 소형모델에서 상용화되고있다. 현재 동종분야에서 $5{\sim}7$ 인치 이상의 중대형에서는 아직 검토나 개발단계인 것으로 파악되고 있다. LED의 특징인 장수명, 고색순도, Robustness 등의 장점에도 불구하고 광효율이나 경제적측면에서 아직 형광램프 Type 에 비해 개선점이 남아있는 것도 개발지연 이유중의 하나다. 최근에 일부 광원업체에서 소비전력 5W로 높은 출광효율을 갖는 고휘도를 가진 LED가 개발되고있다. 고색재현성을 요구하는 TV등의 민수용 디스플레이시장이 커지는 현 추세에 한 방법으로 3색의 고휘도 LED광원을 사용한 백 라이트를 개발했다. R(Red), G(Green), B(Blue)의 3색 점광원 다수를 이중도광판 구조의 장변에 일정 간격으로 배열하여 최종 출사면에서 백색이 되도록 소정의 구성비로 설계하였다. 점광원간의 간격으로 인해 발생되는 혼색도를 보완하기위해 광원과 출사면까지의 광경로를 점광원이 아닌 튜브형의 형광광원 사용시보다 일정량 길게 설계해야 되는데, 이것으로 인해 출광효율이 형광램프구조에 비해 떨어지는 결과로 나타났다. 본 연구에서는 17인치 모니터구조의 백라이트에서 색재현성 105%와 소비전력 67W에서 표면휘도 $2000cd/m^2$ 정도를 달성하였다.

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Growth of zinc oxide thin films by oxygen plasma-assisted pulsed laser deposition

  • Pak, Sang-Woo;Suh, Joo-Young;Lee, Dong-Uk;Kim, Eun-Kyu
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2010년도 제39회 하계학술대회 초록집
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    • pp.208-208
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    • 2010
  • Zinc oxide (ZnO) is a functional material with interesting optical and electrical properties, a wide band gap (more than 3.3 eV), a high transmittance in the visible light region, piezoelectric properties, and a high n-type conductivity. This material has been investigated for use in many applications, such as transparent electrodes, blue light-emitting diodes, and ultra-violet detector. ZnO films grown under low oxygen pressure by thin film deposition methods show low resistivity and large free electron concentration. Therefore, reducing the background carrier concentration in ZnO films is one of the major challenges ahead of realizing high-performance ZnO-based optoelectronic devices. In this study, we deposited ZnO thin films on sapphire substrates by pulsed laser deposition (PLD) with employing an oxygen plasma source to decrease the background free-electron concentration and enhance the crystalline quality. Then, the substrate temperature was varied between 200 'C to 900 'C The vacuum chamber was initially evacuated to a pressure of $10^{-6}$ Torr, and then a pure $O_2$ gas was introduced into the chamber and the pressure during deposition was maintained at $10^{-2}$ Torr. Crystallinity and orientation of ZnO films were investigated by X-ray diffraction (XRD). The film surface was analyzed with atomic force microscope (AFM). And electrical properties were measured at room temperature by Hall measurement.

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Monochromatic Amber Light Emitting Diode with YAG and CaAlSiN3 Phosphor in Glass for Automotive Applications

  • Lee, Jeong Woo;Cha, Jae Min;Kim, Jinmo;Lee, Hee Chul;Yoon, Chang-Bun
    • 한국세라믹학회지
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    • 제56권1호
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    • pp.71-76
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    • 2019
  • Monochromatic amber phosphor in glasses (PiGs) for automotive LED applications were fabricated with $YAG:Ce^{3+}$, $CaAlSiN_3:Eu^{2+}$ phosphors and Pb-free silicate glass. After synthesis and thickness-thinning process, PiGs were mounted on high-power blue LED to make monochromatic amber LEDs. PiGs were simple mixtures of 566 nm yellow YAG, 615 nm red $CaAlSiN_3:Eu^{2+}$ phosphor and transparent glass frit. The powders were uniaxially pressed and treated again through CIP (cold isostatic pressing) at 200 MPa for 20 min to increase packing density. After conventional thermal treatment at $550^{\circ}C$ for 30 min, PiGs were applied by using GPS (gas pressure sintering) to obtain a fully dense PiG plate. As the phosphor content increased, the density of the sintered body decreased and PiGs containing 30 wt% phosphor had full sintered density. Changes in photoluminescence spectra and color coordination were investigated by varying the ratio of $YAG/CaAlSiN_3$ and the thickness of the plates. Considering the optical spectrum and color coordinates, PiG plates with $240{\mu}m$ thickness showed a color purity of 98% and a wavelength of about 605 nm. Plates exhibit suitable optical characteristics as amber light-converting material for automotive LED applications.

완전제어형 식물생산시스템에서 광질에 따른 아이스플랜트의 생육과 기능성물질 함량 (Growth and Phytochemical Contents of Ice Plant as Affected by Light Quality in a Closed-type Plant Production System)

  • 김영진;김혜민;황승재
    • 원예과학기술지
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    • 제34권6호
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    • pp.878-885
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    • 2016
  • 본 연구는 밀폐형 식물생산시스템에서 아이스플랜트의 생육과 기능성물질에 따른 광질의 효과를 구명하고자 수행하였다. 아이스플랜트 종자를 128구 플러그 트레이에 암면을 이용하여 파종하였고, 묘는 밀폐형 식물생산시스템에서 담액식 수경재배를 이용하여 정식하고 재배하였다(EC $1.5dS{\cdot}m^{-1}$, pH 6.5). 정식 후 2주째부터 아이스플랜트의 블러더 세포 발달을 위해 2mM의 염화나트륨(NaCl)을 첨가하여 공급하였다. 실험에 이용된 다른 광질을 가진 세 개의 인공광원으로는 형광등과 RW LED, RBW LED를 사용하였다. 이때 광주기는 14/10(명기/암기), 광도는 $150{\mu}mol{\cdot}m^{-2}{\cdot}s^{-1}$ PPFD로 설정했다. 결과적으로 엽면적, 지상부와 지하부의 생체중과 건물중은 형광등 처리에서 아이스플랜트의 생육 증진에 가장 효과적이었다. SPAD 값은 형광등과 RBW LED 처리에서 각각 29.8과 30.6으로 높은 값을 나타냈다. 염도는 모든 처리구에서 유의적인 차이가 없었다. 엽록소 형광은 형광등 처리에서 유의적으로 가장 높았다. 총페놀함량과 항산화능은 RBW LED 처리에서 높은 값을 나타냈다. 총플라보노이드 함량은 형광등과 RBW LED 처리에서 유의적으로 높았다. 따라서, 본 결과는 형광등 처리에서 아이스 플랜트의 생육이 가장 효과적인 것으로 나타났다. 반면에 기능성물질은R BW LED 처리에서 가장 효과적이었다.

LED용Mg2+·Ba2+Co-Doped Sr2SiO4:Eu 노란색 형광체의 발광특성 (Luminescence Characteristics of Mg2+·Ba2+ Co-Doped Sr2SiO4:Eu Yellow Phosphor for Light Emitting Diodes)

  • 최경재;지순덕;김창해;이상혁;김호건
    • 한국세라믹학회지
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    • 제44권3호
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    • pp.147-151
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    • 2007
  • An improvement for the efficiency of the $Sr_{2}SiO_{4}:Eu$ yellow phosphor under the $450{\sim}470\;nm$ excitation range have been achieved by adding the co-doping element ($Mg^{2+}\;and\;Ba^{2+}$) in the host. White LEDs were fabricated through an integration of an blue (InGaN) chip (${\lambda}_{cm}=450\;nm$) and a blend of two phosphors ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) in a single package. The InGaN-based two phosphor blends ($Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor) LEDs showed three bands at 450 nm, 550 nm and 640 nm, respectively. The 450 nm emission band was due to a radiative recombination from an InGaN active layer. This 450 nm emission was used as an optical transition of the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor. As a consequence of a preparation of white LEDs using the $Mg^{2+},\;Ba^{2+}\;co-doped\;Sr_{2}SiO_{4}:Eu$ yellow phosphor+CaS:Eu red phosphor yellow phosphor and CaS:Eu red phosphor, the highest luminescence efficiency was obtained at the 0.03 mol $Ba^{2+}$ concentration. At this time, the white LEDs showed the CCT (5300 K), CRI (89.9) and luminous efficacy (17.34 lm/W).

흰쥐의 MIA 유발 무릎 뼈관절염에 대한 840 nm LED의 효과 (Effect of 840 nm Light-Emitting Diode(LED) Irradiation on Monosodium Iodoacetate-Induced Osteoarthritis in Rats)

  • 제갈승주;권필승;김진경;이재형
    • 대한물리의학회지
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    • 제9권2호
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    • pp.151-159
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    • 2014
  • PURPOSE: The purpose of this study was to evaluate whether light-emitting diodes (LED) irradiation could be effective in a noninvasive, therapeutic device for the treatment of osteoarthritis(OA). METHODS: Twenty-four male Sprague-Dawley rats were divided into four groups: Vehicle control (saline); monosodium iodoacetate-injection (MIA); LED irradiation after MIA injection (MIA-LED); indomethacin-treatment after MIA injection (MIA-IMT). OA was induced by intra-articular injection of 3 mg MIA through the patellar ligament of the right knee. Vehicle control rats were injected with an equivalent volume of saline. The LED was irradiated for 15 min/day for a week after 7 days of MIA treatment. To compare with the effect of LED irradiation, the indomethacin was administrated 20 mg/kg twice a week orally after 7 days of MIA treatment. Knee joints were removed and fixed overnight in 10% neutral buffered formalin and decalcified by EDTA for 2 week before being embedded in paraffin. The assessment of OA induction were monitored by knee movement and radiographic finding. Histologic analysis were performed following staining with hematoxylin and eosin, safranin O-fast green, or toluidine blue, picrosirius red, and histologic changes were scored according to a modified Mankin system. Apoptotic cell in tissue sections was detected using TUNEL method. RESULTS: Radiographic examination could not show the differences between the MIA-treated and the MIA-LED-treated rats. In the histologic analysis, however, LED irradiation prevented cartilage damage and subchondral bone destruction, and significantly reduced mononuclear inflammatory cell infiltration and pannus formation. LED irradiation also reduced apoptosis of cartilage cells, but it prevented apoptosis of infiltrated inflammatory cells in synovium. In addition, LED irradiation showed an increase of collagen production in the meniscus. CONCLUSION: These results suggest that the 840 nm LED irradiation would be a suitable non-thermal phototherapy for the treatment of OA, as a cartilage protection and anti-inflammatory modality.